2SC3506

Power Transistors 2SC3506 Silicon NPN triple diffusion planar type For high-speed switching Unit: mm s Features q q q q (TC=25˚C) Ratings 1000 1000 800 7 6 3 2 70 3 150 –55 to +150 Unit V V V V A A A W ˚C ˚C 16.2±0.5 12.5 3.5 Solder Dip s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Base current Collector power TC=25°C dissipation Ta=25°C Junction temperature Storage temperature Symbol VCBO VCES VCEO VEBO ICP IC IB PC Tj Tstg 21.0±0.5 15.0±0.2 High-speed switching High collector to base voltage VCBO Satisfactory linearity of foward current transfer ratio hFE Full-pack package which can be installed to the heat sink with one screw 0.7 15.0±0.3 11.0±0.2 5.0±0.2 3.2 φ3.2±0.1 2.0±0.2 2.0±0.1 0.6±0.2 1.1±0.1 5.45±0.3 10.9±0.5 1 2 3 1:Base 2:Collector 3:Emitter TOP–3 Full Pack Package(a) s Electrical Characteristics Parameter Collector cutoff current Emitter cutoff current Collector to emitter voltage Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Turn-on time Storage time Fall time *V CEO(sus) (TC=25˚C) Symbol ICBO IEBO VCEO(sus)* hFE VCE(sat) VBE(sat) fT ton tstg tf Conditions VCB = 1000V, IE = 0 VEB = 7V, IC = 0 IC = 0.5A, L = 50mH VCE = 5V, IC = 2A IC = 2A, IB = 0.4A IC = 2A, IB = 0.4A VCE = 5V, IC = 0.2A, f = 1MHz IC = 2A, IB1 = 0.4A, IB2 = – 0.8A, VCC = 250V 4 1 2.5 0.5 800 6 1.5 1.5 V V MHz µs µs µs min typ max 50 50 Unit µA µA V Test circuit 50/60Hz mercury relay L 50mH 120Ω 6V 1Ω 15V X Y G 1 Power Transistors PC — Ta 160 5 (1) TC=Ta (2) With a 100 × 100 × 2mm Al heat sink (3) Without heat sink (PC=3.0W) TC=25˚C IB=800mA 2SC3506 IC — VCE Collector to emitter saturation voltage VCE(sat) (V) 10 VCE(sat) — IC IC/IB=5 TC=100˚C 25˚C –25˚C 1 Collector power dissipation PC (W) 140 120 100 80 60 40 20 (2) (3) 0 0 20 40 Collector current IC (A) 4 3 400mA 3 (1) 2 200mA 150mA 100mA 0.3 0.1 1 50mA 20mA 0.03 0 60 80 100 120 140 160 0 2 4 6 8 10 12 0.01 0.1 0.3 1 3 10 30 Ambient temperature Ta (˚C) Collector to emitter voltage VCE (V) Collector current IC (A) VBE(sat) — IC 1000 hFE — IC 1000 VCE=5V 300 100 30 10 3 1 0.3 0.1 0.01 0.03 IC/IB=5 fT — IC VCE=5V f=1MHz TC=25˚C Base to emitter saturation voltage VBE(sat) (V) 10 Forward current transfer ratio hFE 3 TC=–25˚C 100˚C 0.3 25˚C 100 30 10 3 1 0.3 0.1 0.01 0.03 TC=100˚C 25˚C 1 –25˚C 0.1 0.03 0.01 0.1 0.3 1 3 10 30 0.1 0.3 1 3 10 Transition frequency fT (MHz) 300 0.1 0.3 1 3 10 Collector current IC (A) Collector current IC (A) Collector current IC (A) ton, tstg, tf — IC 100 30 Pulsed tw=1ms Duty cycle=1% IC/IB=5 (2IB1=–IB2) VCC=250V TC=25˚C Area of safe operation (ASO) 10 3 1 0.3 0.1 0.03 0.01 ICP IC 1s Non repetitive pulse TC=25˚C t=10ms Switching time ton,tstg,tf (µs) 10 3 1 0.3 0.1 0.03 tstg ton tf Collector current IC (A) 8 0.003 0.01 0 1 2 3 4 5 6 7 1 3 10 30 100 300 1000 Collector current IC (A) Collector to emitter voltage VCE (V) 2 Power Transistors Area of safe operation, reverse bias ASO 8 7 Lcoil=100µH IC/IB=5 (2IB1=–IB2) TC=125˚C 2SC3506 Reverse bias ASO measuring circuit L coil IB1 Vin T.U.T IC Collector current IC (A) 6 5 4 3 2 1 0 0 ICP –IB2 VCC IC tW Vclamp 200 400 600 800 1000 1200 1400 1600 Collector to emitter voltage VCE (V) Rth(t) — t 103 (1) PT=10V × 0.3A (3W) and without heat sink (2) PT=10V × 1.0A (10W) and with a 100 × 100 × 2mm Al heat sink Thermal resistance Rth(t) (˚C/W) 102 (1) 10 (2) 1 10–1 10–3 10–2 10–1 1 10 102 103 104 Time t (s) 3