2SC3874

Power Transistors 2SC3874 Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching 20.0±0.5 Unit: mm φ 3.3±0.2 5.0±0.3 3.0 6.0 s Features q q q q High-speed switching High collector to base voltage VCBO Wide area of safe operation (ASO) Satisfactory linearity of foward current transfer ratio hFE (TC=25˚C) Ratings 500 500 400 7 25 15 5 150 3.5 150 –55 to +150 Unit V V V V A A A W ˚C ˚C 26.0±0.5 10.0 1.5 2.0 4.0 1.5 20.0±0.5 2.5 Solder Dip s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Base current Collector power TC=25°C dissipation Ta=25°C Junction temperature Storage temperature Symbol VCBO VCES VCEO VEBO ICP IC IB PC Tj Tstg 2.0±0.3 3.0±0.3 1.0±0.2 2.7±0.3 0.6±0.2 5.45±0.3 10.9±0.5 1 2 3 1:Base 2:Collector 3:Emitter TOP–3L Package s Electrical Characteristics Parameter Collector cutoff current Emitter cutoff current Collector to emitter voltage Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Turn-on time Storage time Fall time (TC=25˚C) Symbol ICBO IEBO VCEO hFE1 hFE2 VCE(sat) VBE(sat) fT ton tstg tf Conditions VCB = 500V, IE = 0 VEB = 5V, IC = 0 IC = 10mA, IB = 0 VCE = 5V, IC = 0.1A VCE = 5V, IC = 10A IC = 10A, IB = 2A IC = 10A, IB = 2A VCE = 10V, IC = 1A, f = 1MHz IC = 10A, IB1 = 2A, IB2 = –4A, VCC = 150V 20 0.7 2.0 0.3 400 15 8 1.0 1.5 V V MHz µs µs µs min typ max 100 100 Unit µA µA V 2.0 1.5 3.0 1 Power Transistors PC — Ta 200 2SC3874 IC — VCE Collector to emitter saturation voltage VCE(sat) (V) 20 TC=25˚C IB=2A 10 VCE(sat) — IC IC/IB=5 Collector power dissipation PC (W) 175 150 125 100 75 50 25 (2) 0 0 20 40 (1) Collector current IC (A) (1) TC=Ta (2) With a 100 × 100 × 2mm Al heat sink (3) Without heat sink (PC=3.5W) 16 1A 12 0.8A 0.6A 8 3 TC=100˚C 1 25˚C 0.3 –25˚C 0.1 0.4A 0.3A 4 (3) 0 60 80 100 120 140 160 0 2 4 6 8 0.2A 0.1A 0.03 10 0.01 0.1 0.3 1 3 10 Ambient temperature Ta (˚C) Collector to emitter voltage VCE (V) Collector current IC (A) VBE(sat) — IC 10 hFE — IC IC/IB=5 3000 VCE=5V 1000 300 100 30 10 3 1 0.3 0.1 0.01 0.03 fT — IC VCE=10V f=1MHz TC=25˚C Base to emitter saturation voltage VBE(sat) (V) Forward current transfer ratio hFE 3 300 100 TC=100˚C 30 10 –25˚C 25˚C 1 TC=–25˚C 100˚C 0.3 25˚C 0.1 0.03 3 1 0.1 0.01 0.1 0.3 1 3 10 0.3 1 3 10 30 Transition frequency fT (MHz) 1000 0.1 0.3 1 3 10 Collector current IC (A) Collector current IC (A) Collector current IC (A) Cob — VCB 10000 100 IE=0 f=1MHz TC=25˚C 30 ton, tstg, tf — IC Pulsed tw=1ms Duty cycle=1% IC/IB=5 (2IB1=–IB2) VCC=150V TC=25˚C tstg Area of safe operation (ASO) 100 30 ICP IC 10ms DC Collector output capacitance Cob (pF) 3000 1000 300 100 30 10 3 1 0.1 Non repetitive pulse TC=25˚C t=0.5ms Switching time ton,tstg,tf (µs) Collector current IC (A) 10 3 1 0.3 0.1 0.03 0.01 10 3 1 0.3 0.1 0.03 0.01 1ms ton tf 0.3 1 3 10 30 100 0 5 10 15 20 25 1 3 10 30 100 300 1000 Collector to base voltage VCB (V) Collector current IC (A) Collector to emitter voltage VCE (V) 2 Power Transistors Area of safe operation, reverse bias ASO 40 35 Lcoil=200µH IC/IB=5 (2IB1=–IB2) TC=25˚C Clamped ICP 2SC3874 Reverse bias ASO measuring circuit L coil IB1 Vin T.U.T IC Collector current IC (A) 30 25 20 15 10 5 0 0 IC –IB2 VCC tW Vclamp 100 200 300 400 500 600 700 800 Collector to emitter voltage VCE (V) Rth(t) — t 102 (1) PT=10V × 0.3A (3W) and without heat sink (2) PT=10V × 1.0A (10W) and with a 100 × 100 × 2mm Al heat sink (1) Thermal resistance Rth(t) (˚C/W) 10 (2) 1 10–1 10–2 10–3 10–2 10–1 1 10 102 103 104 105 Time t (s) 3