2SD1211

Transistor 2SD1211 Silicon NPN epitaxial planer type For low-frequency amplification Complementary to 2SB987 5.9± 0.2 Unit: mm 4.9± 0.2 s Features q q High collector to emitter voltage VCEO. Optimum for the driver-stage of a low-frequency and 40 to 60W output amplifier. (Ta=25˚C) Ratings 120 120 5 1 0.5 1 150 –55 ~ +150 Unit V V V A A W ˚C ˚C 1.27 0.45–0.1 +0.2 Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg 13.5± 0.5 s Absolute Maximum Ratings 2.54± 0.15 0.7–0.2 +0.3 0.7± 0.1 8.6± 0.2 0.45–0.1 1.27 +0.2 s Electrical Characteristics Parameter Collector to emitter voltage Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Collector output capacitance (Ta=25˚C) Symbol VCEO VEBO hFE1* hFE2 VCE(sat) VBE(sat) fT Cob Conditions IC = 0.1mA, IB = 0 IE = 10µA, IC = 0 VCE = 10V, IC = 150mA VCE = 5V, IC = 500mA IC = 300mA, IB = 30mA IC = 300mA, IB = 30mA VCB = 10V, IE = –50mA, f = 200MHz VCB = 10V, IE = 0, f = 1MHz 200 20 min 120 5 130 50 1 1.2 V V MHz pF 330 typ max Unit V V *h FE1 Rank classification R 130 ~ 220 S 185 ~ 330 Rank hFE1 3.2 1 2 3 1:Emitter 2:Collector 3:Base EIAJ:SC–51 TO–92L Package 1 Transistor PC — Ta 1.2 200 Ta=25˚C 2SD1211 IC — VCE Collector to emitter saturation voltage VCE(sat) (V) 100 30 10 3 1 Ta=75˚C 0.3 0.1 0.03 0.01 0.01 0.03 25˚C –25˚C VCE(sat) — IC IC/IB=10 Collector power dissipation PC (W) 1.0 Collector current IC (mA) 160 IB=1.0mA 0.9mA 0.8 120 0.8mA 0.7mA 0.6mA 0.6 80 0.4 0.5mA 0.4mA 0.2 40 0.3mA 0.2mA 0.1mA 0 0 20 40 60 80 100 120 140 160 0 0 2 4 6 8 10 12 0.1 0.3 1 3 10 Ambient temperature Ta (˚C) Collector to emitter voltage VCE (V) Collector current IC (A) VBE(sat) — IC 100 hFE — IC IC/IB=10 600 IC/IB=10 400 fT — I E VCB=10V Ta=25˚C Base to emitter saturation voltage VBE(sat) (V) 500 Transition frequency fT (MHz) 1 3 10 30 10 3 1 0.3 0.1 0.03 0.01 0.01 0.03 Ta=–25˚C 75˚C Forward current transfer ratio hFE 350 300 250 200 150 100 50 400 25˚C 300 Ta=75˚C 200 25˚C –25˚C 100 0.1 0.3 1 3 10 0 0.01 0.03 0.1 0.3 0 –1 –3 –10 –30 –100 Collector current IC (A) Collector current IC (A) Emitter current IE (mA) Cob — VCB 80 10 IE=0 f=1MHz Ta=25˚C 3 Area of safe operation (ASO) Single pulse Ta=25˚C Collector output capacitance Cob (pF) 70 60 50 40 30 20 10 0 1 3 10 Collector current IC (A) 1 0.3 0.1 0.03 0.01 0.003 0.001 ICP t=10ms IC t=1s 30 100 1 3 10 30 100 300 1000 Collector to base voltage VCB (V) Collector to emitter voltage VCE (V) 2