Power Transistors
2SD1538, 2SD1538A
Silicon NPN epitaxial planar type
For low-voltage switching Complementary to 2SB1070 and 2SB1070A
10.0±0.3
8.5±0.2 6.0±0.5 3.4±0.3
Unit: mm
1.0±0.1
s Features
q q q
Low collector to emitter saturation voltage VCE(sat) High-speed switching N type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of small electronic equipment.
1.5±0.1
1.5max.
1.1max.
10.5min.
2.0
0.8±0.1
0.5max.
2.54±0.3
s
Absolute Maximum Ratings (TC=25˚C)
Parameter Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg Ratings 40 50 20 40 5 8 4 25 1.3 150 –55 to +150 Unit V 2SD1538 2SD1538A 2SD1538
5.08±0.5 1 2 3
Collector to base voltage Collector to
1:Base 2:Collector 3:Emitter N Type Package Unit: mm
3.4±0.3 1.0±0.1
8.5±0.2 6.0±0.3
1.5–0.4
Peak collector current Collector current Collector power TC=25°C dissipation Ta=25°C Junction temperature Storage temperature
A
2.0
3.0–0.2
A W ˚C ˚C
4.4±0.5
0.8±0.1 2.54±0.3
R0.5 R0.5 1.1 max.
0 to 0.4
5.08±0.5
1
2
3
1:Base 2:Collector 3:Emitter N Type Package (DS)
s Electrical Characteristics
Parameter Collector cutoff current Emitter cutoff current Collector to emitter voltage 2SD1538 2SD1538A 2SD1538 2SD1538A
(TC=25˚C)
Symbol ICBO IEBO VCEO hFE1 hFE2* VCE(sat) VBE(sat) fT ton tstg tf Conditions VCB = 40V, IE = 0 VCB = 50V, IE = 0 VEB = 5V, IC = 0 IC = 10mA, IB = 0 VCE = 2V, IC = 0.1A VCE = 2V, IC = 1A IC = 2A, IB = 0.1A IC = 2A, IB = 0.1A VCE = 5V, IC = 0.5A, f = 10MHz IC = 2A, IB1 = 0.2A, IB2 = – 0.2A, VCC = 20V 120 0.2 0.5 0.1 20 40 45 90 260 0.5 1.5 V V MHz µs µs µs min typ max 50 50 50 Unit µA µA V
Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Turn-on time Storage time Fall time
*h FE2
Rank classification
Q 90 to 180 P 130 to 260
Rank hFE2
4.4±0.5
14.7±0.5
Emitter to base voltage
V
10.0±0.3
emitter voltage 2SD1538A
V
+0.4
+0
1
Power Transistors
PC — Ta
40 6 (1) TC=Ta (2) With a 100 × 100 × 2mm Al heat sink (3) With a 50 × 50 × 2mm Al heat sink (4) Without heat sink (PC=1.3W) TC=25˚C 5 IB=60mA 50mA 40mA 30mA 3 20mA 2 10mA 1 5mA 0 0 25 50 75 100 125 150 0 2 4 6 8 10 12
2SD1538, 2SD1538A
IC — VCE
Collector to emitter saturation voltage VCE(sat) (V)
100 IC/IB=10 30 10 3 1 TC=100˚C 0.3 0.1 0.03 0.01 0.01 0.03 25˚C –25˚C
VCE(sat) — IC
Collector power dissipation PC (W)
35 30 25 20 15 10 5 0 (2) (3) (4) (1)
Collector current IC (A)
4
0.1
0.3
1
3
10
Ambient temperature Ta (˚C)
Collector to emitter voltage VCE (V)
Collector current IC (A)
VBE(sat) — IC
100 10000 IC/IB=10
hFE — IC
10000 VCE=2V 3000 1000 300 100 30 10 3 1 0.01 0.03
fT — IC
VCE=5V f=10MHz TC=25˚C
Base to emitter saturation voltage VBE(sat) (V)
Forward current transfer ratio hFE
10 3 25˚C 1 0.3 0.1 0.03 0.01 0.01 0.03 TC=–25˚C 100˚C
1000 300 100 –25˚C 30 10 3 1 0.1 TC=100˚C 25˚C
0.1
0.3
1
3
10
0.3
1
3
10
30
100
Transition frequency fT (MHz)
30
3000
0.1
0.3
1
3
10
Collector current IC (A)
Collector current IC (A)
Collector current IC (A)
ton, tstg, tf — IC
10 Pulsed tw=1ms Duty cycle=1% IC/IB=10 (IB1=–IB2) VCC=20V TC=25˚C tstg
Area of safe operation (ASO)
100 30 Non repetitive pulse TC=25˚C
Switching time ton,tstg,tf (µs)
3
Collector current IC (A)
10 ICP IC 3 300ms 1 0.3 0.1 0.03 10ms t=1ms
1
0.3
ton tf
0.1
0.03
0.01 0 1 2 3 4 5 6 7 8
0.01 1 3 10
30
2SD1538A
100
2SD1538
300
1000
Collector current IC (A)
Collector to emitter voltage VCE (V)
2
Power Transistors
Rth(t) — t
102 (1) Without heat sink (2) With a 50 × 50 × 2mm Al heat sink (1)
2SD1538, 2SD1538A
Thermal resistance Rth(t) (˚C/W)
(2) 10
1
10–1
10–2 10–4
10–3
10–2
10–1
1
10
102
103
104
Time t (s)
3
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