2SD2358

Transistors 2SD2358 Silicon NPN epitaxial planer type Unit: mm For low-frequency output amplification Complementary to 2SB1538 I Features • Low collector to emitter saturation voltage VCE(sat): < 0.15 V • Allowing supply with the radial taping 6.9±0.1 1.05 2.5±0.1 ±0.05 (1.45) 0.8 0.15 0.7 4.0 0.65 max. 1.0 1.0 0.2 0.45−0.05 +0.1 I Absolute Maximum Ratings Ta = 25°C Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation * Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg Rating 10 10 5 1.2 1 1 150 −55 to +150 Unit V V V A A W °C °C 1 2 3 0.45−0.05 +0.1 2.5±0.5 2.5±0.5 Note) In addition to the lead type shown in the upper figure, the type as shown in the lower figure is also available. 1: Emitter 2: Collector 3: Base MT2 Type Package 1.2±0.1 0.65 max. 0.45+ 0.1 − 0.05 Note) *: Printed circuit board: Copper foil area of 1 cm2 or more, and the board thickness of 1.7 mm for the collector portion 2.5±0.1 (HW Type) I Electrical Characteristics Ta = 25°C ± 3°C Parameter Collector cutoff current Collector to base voltage Collector to emitter voltage Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Transition frequency Collector output capacitance Symbol ICBO VCBO VCEO VEBO hFE VCE(sat) fT Cob Conditions VCB = 7 V, IE = 0 IC = 10 µA, IE = 0 IC = 1 mA, IB = 0 IE = 10 µA, IC = 0 VCE = 2 V, IC = 100 mA IC = 500 mA, IB = 20 mA VCB = 5 V, IE = −50 mA, f = 200 MHz VCB = 20 V, IE = 0, f = 1 MHz 120 30 10 10 5 200 800 0.15 V MHz pF Min Typ Max 1 Unit µA V V V 14.5±0.5 0.5 4.5±0.1 1