2SD2469A

Power Transistors 2SD2469, 2SD2469A Silicon NPN epitaxial planar type For power switching Complementary to 2SB1607 Unit: mm 4.6±0.2 φ3.2±0.1 9.9±0.3 2.9±0.2 s Features q q q q 4.1±0.2 8.0±0.2 Solder Dip Low collector to emitter saturation voltage VCE(sat) Satisfactory linearity of foward current transfer ratio hFE Large collector current IC Full-pack package with outstanding insulation, which can be installed to the heat sink with one screw (TC=25˚C) Ratings 130 150 80 100 7 15 7 40 2 150 –55 to +150 Unit V 15.0±0.3 3.0±0.2 Parameter Collector to base voltage Collector to 2SD2469 2SD2469A 2SD2469 Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg 13.7–0.2 +0.5 s Absolute Maximum Ratings 1.2±0.15 1.45±0.15 0.75±0.1 2.54±0.2 5.08±0.4 2.6±0.1 0.7±0.1 emitter voltage 2SD2469A Emitter to base voltage Peak collector current Collector current Collector power TC=25°C dissipation Ta=25°C Junction temperature Storage temperature V V A A W ˚C ˚C 7° 123 1:Base 2:Collector 3:Emitter TO–220E Full Pack Package s Electrical Characteristics Parameter Collector cutoff current Emitter cutoff current Collector to emitter voltage 2SD2469 2SD2469A (TC=25˚C) Symbol ICBO IEBO VCEO hFE1 hFE2* VCE(sat) VBE(sat) fT ton tstg tf Conditions VCB = 100V, IE = 0 VEB = 5V, IC = 0 IC = 10mA, IB = 0 VCE = 2V, IC = 0.1A VCE = 2V, IC = 3A IC = 5A, IB = 0.25A IC = 5A, IB = 0.25A VCE = 10V, IC = 0.5A, f = 10MHz IC = 3A, IB1 = 0.3A, IB2 = – 0.3A, VCC = 50V 30 0.5 1.5 0.1 80 100 45 90 260 0.5 1.5 V V MHz µs µs µs min typ max 10 50 Unit µA µA V Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Turn-on time Storage time Fall time *h FE2 Rank classification Q 90 to 180 P 130 to 260 Rank hFE2 1 Power Transistors PC — Ta 50 10 (1) TC=Ta (2) With a 100 × 100 × 2mm Al heat sink (3) With a 50 × 50 × 2mm Al heat sink (4) Without heat sink (PC=2W) TC=25˚C 2SD2469, 2SD2469A IC — VCE Collector to emitter saturation voltage VCE(sat) (V) 10 VCE(sat) — IC (1) IC/IB=10 (2) IC/IB=20 TC=25˚C Collector power dissipation PC (W) Collector current IC (A) 40 (1) 8 IB=55mA 6 50mA 45mA 40mA 35mA 30mA 20mA 15mA 2 10mA 5mA 0 3 30 1 (2) (1) 0.3 20 4 0.1 10 (2) (3) (4) 0.03 0 0 20 40 60 80 100 120 140 160 0 2 4 6 8 10 12 0.01 0.01 0.03 0.1 0.3 1 3 Ambient temperature Ta (˚C) Collector to emitter voltage VCE (V) Collector current IC (A) VCE(sat) — IC Collector to emitter saturation voltage VCE(sat) (V) 100 VBE(sat) — IC 100 VBE(sat) — IC Base to emitter saturation voltage VBE(sat) (V) IC/IB=20 30 10 3 1 0.3 0.1 0.03 0.01 0.01 0.03 TC=–25˚C 100˚C 25˚C Base to emitter saturation voltage VBE(sat) (V) IC/IB=20 30 10 3 1 TC=100˚C 0.3 0.1 –25˚C 0.03 0.01 0.01 0.03 25˚C 10 (1) IC/IB=10 (2) IC/IB=20 TC=25˚C 3 (1) (2) 1 0.3 0.1 0.03 0.1 0.3 1 3 10 0.01 0.1 0.3 1 3 10 30 0.1 0.3 1 3 10 Collector current IC (A) Collector current IC (A) Collector current IC (A) hFE — IC 10000 VCE=2V 10000 3000 1000 300 100 30 10 3 1 0.01 0.03 fT — IC 10000 Cob — VCB Collector output capacitance Cob (pF) VCE=10V f=10MHz TC=25˚C IE=0 f=1MHz TC=25˚C Forward current transfer ratio hFE 1000 300 Transition frequency fT (MHz) 3000 3000 1000 300 100 30 10 3 1 0.1 TC=100˚C 25˚C 100 –25˚C 30 10 3 1 0.01 0.03 0.1 0.3 1 3 10 0.1 0.3 1 3 10 0.3 1 3 10 30 100 Collector current IC (A) Collector current IC (A) Collector to base voltage VCB (V) 2 Power Transistors ton, tstg, tf — IC 100 30 Pulsed tw=1ms Duty cycle=1% IC/IB=10 (IB1=–IB2) VCC=50V TC=25˚C 2SD2469, 2SD2469A Area of safe operation (ASO) 100 30 ICP Non repetitive pulse TC=25˚C Switching time ton,tstg,tf (µs) Collector current IC (A) 10 3 1 0.3 0.1 0.03 0.01 0 1 2 3 4 10 IC 3 10ms DC 1 1ms 0.3 0.1 0.03 0.01 t=0.5ms tstg ton tf 5 6 7 8 1 3 10 30 100 2SD2469A 300 2SD2469 1000 Collector current IC (A) Collector to emitter voltage VCE (V) Rth(t) — t 103 (1) Without heat sink (2) With a 100 × 100 × 2mm Al heat sink Thermal resistance Rth(t) (˚C/W) 102 (1) 10 (2) 1 10–1 10–2 10–4 10–3 10–2 10–1 1 10 102 103 104 Time t (s) 3