B1148

Power Transistors 2SB1148, 2SB1148A Silicon PNP epitaxial planar type For low-voltage switching Complementary to 2SD1752 and 2SD1752A 7.0±0.3 3.0±0.2 3.5±0.2 Unit: mm s Features q q q Low collector to emitter saturation voltage VCE(sat) High-speed switching I type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of small electronic equipment. (TC=25˚C) Ratings –40 –50 –20 –40 –7 –20 –10 15 1.3 150 –55 to +150 Unit V 7.2±0.3 0.8±0.2 1.1±0.1 0.85±0.1 0.4±0.1 1.0±0.2 10.0 –0. +0.3 0.75±0.1 2.3±0.2 4.6±0.4 1 2 3 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to 2SB1148 2SB1148A 2SB1148 Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg 1:Base 2:Collector 3:Emitter I Type Package 3.5±0.2 2.0±0.2 7.0±0.3 Unit: mm 0 to 0.15 emitter voltage 2SB1148A Emitter to base voltage Peak collector current Collector current Collector power TC=25°C dissipation Ta=25°C Junction temperature Storage temperature V 10.2±0.3 7.2±0.3 V A A W ˚C ˚C 3.0±0.2 1.0 max. 2.5 1.1±0.1 0.75±0.1 0.5 max. 0.9±0.1 0 to 0.15 1 2 3 2.3±0.2 4.6±0.4 1:Base 2:Collector 3:Emitter I Type Package (Y) s Electrical Characteristics Parameter Collector cutoff current Emitter cutoff current Collector to emitter voltage 2SB1148 2SB1148A 2SB1148 2SB1148A (TC=25˚C) Symbol ICBO IEBO VCEO hFE1 hFE2 * Conditions VCB = –40V, IE = 0 VCB = –50V, IE = 0 VEB = –5V, IC = 0 IC = –10mA, IB = 0 VCE = –2V, IC = – 0.1A VCE = –2V, IC = –3A IC = –10A, IB = – 0.33A IC = –10A, IB = – 0.33A VCE = –10V, IC = – 0.5A, f = 10MHz VCB = –10V, IE = 0, f = 1MHz IC = –3A, IB1 = – 0.1A, IB2 = 0.1A, VCC = –20V min typ max –50 –50 –50 Unit µA µA V –20 –40 45 90 260 – 0.6 –1.5 100 400 0.1 0.5 0.1 Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Collector output capacitance Turn-on time Storage time Fall time *h FE2 VCE(sat) VBE(sat) fT Cob ton tstg tf MHz pF µs µs µs Rank classification Q 90 to 180 P 130 to 260 Rank hFE2 2.5±0.2 1.0 2.5±0.2 1.0 V V 1 Power Transistors PC — Ta 20 –12 (1) TC=Ta (2) Without heat sink (PC=1.3W) 15 IB=–100mA –10 –80mA –60mA –50mA –40mA –6 –35mA –30mA –25mA –4 –20mA –15mA –2 (2) 0 0 20 40 60 80 100 120 140 160 0 0 –2 –4 –6 –8 –10 –12 –10mA –5mA TC=25˚C 2SB1148, 2SB1148A IC — VCE Collector to emitter saturation voltage VCE(sat) (V) –10 VCE(sat) — IC IC/IB=30 Collector power dissipation PC (W) –3 Collector current IC (A) –8 –1 TC=100˚C 25˚C –25˚C 10 (1) – 0.3 – 0.1 5 – 0.03 – 0.01 – 0.1 – 0.3 –1 –3 –10 Ambient temperature Ta (˚C) Collector to emitter voltage VCE (V) Collector current IC (A) VBE(sat) — IC –10 hFE — IC IC/IB=30 10000 VCE=–2V 10000 3000 1000 300 100 30 10 3 fT — IC VCE=–10V f=10MHz TC=25˚C Base to emitter saturation voltage VBE(sat) (V) Forward current transfer ratio hFE –3 TC=–25˚C 100˚C 25˚C 1000 300 100 –25˚C 30 10 3 1 – 0.1 – 0.3 25˚C –1 TC=100˚C – 0.3 – 0.1 – 0.03 – 0.01 – 0.1 Transition frequency fT (MHz) –10 –30 –100 3000 – 0.3 –1 –3 –10 –1 –3 1 – 0.01 – 0.03 – 0.1 – 0.3 –1 –3 –10 Collector current IC (A) Collector current IC (A) Collector current IC (A) Cob — VCB 10000 10 IE=0 f=1MHz Ta=25˚C ton, tstg, tf — IC Pulsed tw=1ms Duty cycle=1% IC/IB=30 (–IB1=IB2) VCC=–20V TC=25˚C tstg 0.3 ton 0.1 tf 0.03 Area of safe operation (ASO) –100 –30 Non repetitive pulse TC=25˚C ICP IC t=1ms –3 –1 300ms 10ms Collector output capacitance Cob (pF) 3000 1000 300 100 30 10 3 1 – 0.1 – 0.3 Switching time ton,tstg,tf (µs) 3 Collector current IC (A) –10 1 – 0.3 – 0.1 – 0.03 0.01 –1 –3 –10 –30 –100 0 –1 –2 –3 –4 –5 –6 –7 –8 – 0.01 –1 –3 –10 –30 2SB1148A –100 –300 –1000 Collector to base voltage VCB (V) Collector current IC (A) Collector to emitter voltage VCE (V) 2 2SB1148 Power Transistors Rth(t) — t 103 (1) Without heat sink (2) With a 50 × 50 × 2mm Al heat sink 2SB1148, 2SB1148A Thermal resistance Rth(t) (˚C/W) 102 (1) (2) 10 1 10–1 10–4 10–3 10–2 10–1 1 10 102 103 104 Time t (s) 3