C1573B

Transistor 2SC1573, 2SC1573A, 2SC1573B Silicon NPN triple diffusion planer type For high breakdown voltage general amplification For small TV video output Complementary to 2SC1573 and 2SA879 Unit: mm 5.9± 0.2 4.9± 0.2 q q High collector to emitter voltage VCEO. High transition frequency fT. +0.3 +0.2 Parameter Collector to base voltage 2SC1573 2SC1573A 2SC1573B 2SC1573 Collector to emitter voltage 2SC1573A 2SC1573B Symbol Ratings 250 Unit 2.54± 0.15 13.5± 0.5 VCBO 300 400 200 V 0.7–0.2 s Absolute Maximum Ratings (Ta=25˚C) 0.7± 0.1 8.6± 0.2 s Features VCEO VEBO ICP IC PC Tj Tstg 300 400 V 0.45–0.1 1.27 1.27 0.45–0.1 +0.2 Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature 100 70 1 150 –55 ~ +150 mA mA W ˚C ˚C s Electrical Characteristics Parameter Collector cutoff current Collector to emitter voltage 2SC1573 2SC1573A 2SC1573B 2SC1573 2SC1573A 2SC1573B (Ta=25˚C) Symbol ICBO VCEO Conditions VCB = 12V, IE = 0 200 IC = 100µA, IB = 0 300 400 5 VEBO hFE* VCE(sat) fT IE = 1µA, IC = 0 VCE = 10V, IC = 5mA IC = 50mA, IB = 5mA VCB = 10V, IE = –10mA, f = 200MHz VCB = 10V, IE = 0, f = 1MHz 50 80 5 Cob 4 10 8 pF 7 30 220 1.2 V MHz V V min typ max 2 Unit µA Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Transition frequency Collector output capacitance *h 2SC1573 2SC1573A 2SC1573B FE Rank classification P 30 ~ 100 Q 60 ~ 150 R 100 ~ 220 hFE Rank *2SC1573 for Ranks Q and R only 3.2 Emitter to base voltage 7 V 1 2 3 1:Emitter 2:Collector 3:Base EIAJ:SC–51 TO–92L Package 1 Transistor PC — Ta 1.2 120 2SC1573, 2SC1573A, 2SC1573B IC — VCE 1.8mA 1.6mA 1.4mA 1.2mA 1.0mA 80 0.8mA 0.6mA 0.4mA 40 0.2mA 20 120 Ta=25˚C IB=2mA 100 25˚C VCE=10V IC — VBE Collector power dissipation PC (W) 1.0 100 Collector current IC (mA) Collector current IC (mA) Ta=75˚C 80 –25˚C 0.8 0.6 60 60 0.4 40 0.2 20 0 0 20 40 60 80 100 120 140 160 0 0 2 4 6 8 10 0 0 0.4 0.8 1.2 1.6 2.0 Ambient temperature Ta (˚C) Collector to emitter voltage VCE (V) Base to emitter voltage VBE (V) IC — IB Collector to emitter saturation voltage VCE(sat) (V) 120 VCE=10V Ta=25˚C 100 100 30 VCE(sat) — IC IC/IB=10 3.0 IB — VBE VCE=10V Ta=25˚C 2.5 Collector current IC (mA) 80 Base current IB (mA) 100 10 3 1 0.3 0.1 0.03 0.01 0.1 25˚C Ta=75˚C 2.0 60 1.5 40 1.0 –25˚C 20 0.5 0 0 0.4 0.8 1.2 1.6 2.0 0 0.3 1 3 10 30 0 0.2 0.4 0.6 0.8 1.0 Base current IB (mA) Collector current IC (mA) Base to emitter voltage VBE (V) hFE — IC 360 VCE=10V 160 fT — I E 10 Cob — VCB Collector output capacitance Cob (pF) VCB=10V Ta=25˚C 9 8 7 6 5 4 3 2 1 0 IE=0 f=1MHz Ta=25˚C Forward current transfer ratio hFE 300 Transition frequency fT (MHz) 10 30 100 140 120 100 80 60 40 20 240 180 Ta=75˚C 120 25˚C –25˚C 60 0 0.1 0.3 1 3 0 –1 –3 –10 –30 –100 1 3 10 30 100 Collector current IC (mA) Emitter current IE (mA) Collector to base voltage VCB (V) 2 Transistor ICBO — Ta 104 VCB=250V 104 2SC1573, 2SC1573A, 2SC1573B IEBO — Ta VEB=5V Area of safe operation (ASO) 1000 300 Single pulse Ta=25˚C 103 103 Collector current IC (A) 100 30 10 3 1 0.3 ICP IC DC t=1ms t=10ms ICBO (Ta) ICBO (Ta=25˚C) 102 ICEO (Ta) ICEO (Ta=25˚C) 102 10 10 1 0 40 80 120 160 200 1 0 40 80 120 160 200 0.1 1 3 10 30 100 300 1000 Ambient temperature Ta (˚C) Ambient temperature Ta (˚C) Collector to emitter voltage VCE (V) 3