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CNZ1021

CNZ1021

  • 厂商:

    PANASONIC

  • 封装:

  • 描述:

    CNZ1021 - Photo Interrupters - Panasonic Semiconductor

  • 数据手册
  • 价格&库存
CNZ1021 数据手册
Transmissive Photosensors (Photo Interrupters) CNZ1021,CNZ1022,CNZ1023,CNA1009 Photo Interrupters Overview CNZ1021 series is a transmissive photosensor series in which a high efficiency GaAs infrared light emitting diode is used as the light emitting element, and a high sensitivity phototransistor is used as the light detecting element. The two elements are arranged so as to face each other, and objects passing between them are detected. Features Position detection accuracy : 0.25 mm Gap width : 3 mm (CNZ1021, CNZ1022, CNZ1023) 5 mm (CNA1009) The type directly attached to PCB ........... CNZ1021 Screw-fastened type (both sides) ............. CNZ1022 Screw-fastened type (one side) ................ CNZ1023 The type directly attached to PCB ........... CNA1009 (with a positioning pins) CNZ1021 ∑ Unit : mm CNZ1022 2-R1.5 Unit : mm 25.0 19.0±0.15 ∑ 3.0 +0.15 –0 12.0 (2.5) 0.5 3.5 12.0 3.0±0.15 A ø3.0 +0.15 –0 6.0 5.0 0.4±0.1 Device center A' (C1.2) 10.0 2.1±0.15 Device center ,, , 10.0 (2.5) 3.0±0.15 A 5.0 0.4±0.1 (C1.2) 10.0 min. 2.5 (2-0.45) (7.6) 2 3 (2-0.45) (2.54) SEC. A-A' 10.0 min. 3.0 A' (2-0.45) (7.6) 2 3 (2-C1.2) 2 1 4 3 1 4 ,, ,, 2 1 ∑ (2-0.45) (2.54) SEC. A-A' 3 1 Pin connection 4 2.5 2.1±0.15 4 Pin connection CNZ1023 ∑ Unit : mm CNA1009 Unit : mm 2.0 12.0 (2.5) 3.0±0.15 A Device center A' (2.5) 18.0 12.0±0.15 5.0 0.4±0.1 (4-R2) (C1.2) 10.0 14.0 5.0±0.15 A 0.5±0.1 Device center A' 6.0 5.0 (C1) 2-R1.5 6.0 ,,, , 10.0 min. 2.5 3.0 +0.15 –0 0.5 10.0 min. 2.5 2-0.7 ø3.0 +0.15 –0 (2-0.45) (7.6) 3.5 (2-0.45) 5.2±0.1 (2-0.45) (2.54) SEC. A-A' 2 3 (10.0) 2 3 2 1 3 4 ,,, , 2 2.2±0.15 10.0 2.1±0.15 2-ø0.7±0.1 (2-0.45) (2.54) SEC. A-A' 3 1 2.35±0.1 1 Pin connection 4 4 6.6±0.1 1 Pin connection 4 (Note) 1. Tolerance unless otherwise specified is ±0.3. 2. ( ) Dimension is reference. 1 Transmissive Photosensors (Photo Interrupters) Absolute Maximum Ratings (Ta = 25˚C) Parameter Reverse voltage (DC) Input (Light Forward current (DC) emitting diode) Power dissipation Collector current Symbol Ratings VR IF PD*1 IC 5 50 75 20 30 5 100 Unit V mA mW mA V V mW ˚C ˚C CNZ1021,CNZ1022,CNZ1023,CNA1009 Output (Photo Collector to emitter voltage VCEO transistor) Emitter to collector voltage VECO Collector power dissipation Temperature *1 PC *2 Operating ambient temperature Storage temperature Topr –25 to +85 Tstg –40 to +100 Input power derating ratio is 1.0 mW/˚C at Ta ≥ 25˚C. *2 Output power derating ratio is 1.33 mW/˚C at Ta ≥ 25˚C. Electrical Characteristics (Ta = 25˚C) Parameter Forward voltage (DC) Input characteristics Reverse current (DC) Output characteristics Collector cutoff current Collector current Symbol VF IR ICEO IC V R = 3V VCE = 10V VCC = 5V, IF = 20mA, RL = 100Ω 0.5 5 10 Conditions IF = 20mA min typ 1.25 max 1.4 10 200 15 0.4 Unit V µA nA mA V µs Transfer characteristics Collector to emitter saturation voltage VCE(sat) IF = 40mA, IC = 1mA Response time tr , tf* VCC = 5V, IC = 1mA, RL = 100Ω * Switching time measurement circuit Sig.IN VCC (Input pulse) Sig.OUT (Output pulse) 90% 10% td tr tf ,, 2 ,, 50Ω RL td : Delay time tr : Rise time (Time required for the collector current to increase from 10% to 90% of its final value) tf : Fall time (Time required for the collector current to decrease from 90% to 10% of its initial value) CNZ1021,CNZ1022,CNZ1023,CNA1009 Transmissive Photosensors (Photo Interrupters) IF , IC — Ta 60 60 IF — VF 1.6 Ta = 25˚C VF — Ta IF = 50mA IF , IC (mA) 50 IF 50 IF (mA) Forward current, collector current VF (V) 1.2 10mA 1mA 0.8 40 40 30 IC Forward current 30 20 20 Forward voltage 0 0.4 0.8 1.2 1.6 2.0 2.4 0.4 10 10 0 – 25 0 20 40 60 80 100 0 0 – 40 – 20 0 20 40 60 80 100 Ambient temperature Ta (˚C ) Forward voltage VF (V) Ambient temperature Ta (˚C ) IC — IF 10 2 VCE = 5V Ta = 25˚C 10 2 IC — VCE 160 Ta = 25˚C IC — Ta VCE = 5V IF = 20mA IC (mA) 10 IC (mA) 10 IF = 30mA 20mA 10mA IC (%) Relative output current 10 2 120 Collector current 1 Collector current 1 80 10 –1 10 –1 40 10 –2 10 –1 1 10 10 2 10 –2 10 –1 1 10 0 – 40 – 20 0 20 40 60 80 100 Forward current IF (mA) Collector to emitter voltage VCE (V) Ambient temperature Ta (˚C ) ICEO — Ta 10 3 VCE = 10V 10 2 tr — IC VCC = 5V Ta = 25˚C 100 IC — d VCE = 5V Ta = 25˚C IF = 20mA 10 2 IC (%) ICEO (nA) 10 RL = 1kΩ 500Ω 100Ω 80 Criterion 0 d 60 tr (µs) 10 Dark current 1 Rise time 1 Relative output current 90% 10% 40 10 –1 10 –1 Sig.IN Sig. OUT 50Ω VCC Sig. OUT RL 20 10 –2 – 40 – 20 , ,, 10 –2 10 –1 1 tr td tf 102 0 0 1 2 3 4 5 6 0 20 40 60 80 100 10 Ambient temperature Ta (˚C ) Collector current IC (mA) Distance d (mm) 3
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