LN52

Infrared Light Emitting Diodes LN52 GaAs Infrared Light Emitting Diode Unit : mm For optical control systems Features High-power output, high-efficiency : PO = 6 mW (typ.) Wide directivity, matched for external optical systems : θ = 100 deg. Infrared light emission close to monochromatic light : λP = 950 nm Optimum for mesuring instruments and control equipments in conbination with silicon photodetectors ø5.35 +0.2 –0.1 ø4.2 +0.1 –0.2 3.0±0.3 12.7 min. 2.0±0.1 0.2±0.05 2-ø0.45±0.05 0 1. 5 .1 +0 0.1 – 1. 0± 0. 1 45± 3˚ 2 1 Absolute Maximum Ratings (Ta = 25˚C) Parameter Power dissipation Forward current (DC) Pulse forward current Reverse voltage (DC) Operating ambient temperature Storage temperature * 2.54±0.25 Symbol PD IF IFP * Ratings 160 100 2 3 –25 to +85 –30 to +100 Unit mW mA A V ˚C ˚C 1: Cathode 2: Anode VR Topr Tstg f = 100 Hz, Duty cycle = 0.1 % Electro-Optical Characteristics (Ta = 25˚C) Parameter Radiant power Peak emission wavelength Spectral half band width Forward voltage (DC) Reverse current (DC) Capacitance between pins Rise time Fall time Half-power angle Symbol PO λP ∆λ VF IR Ct tr tf θ Conditions IF = 100mA IF = 100mA IF = 100mA IF = 100mA VR = 3V VR = 0V, f = 1MHz IFP = 100mA The angle in which radiant intencity is 50% min 3.5 typ 6 950 50 1.25 50 1 1 100 max Unit mW nm nm 1.6 10 V µA pF µs µs deg. 1 LN52 Infrared Light Emitting Diodes IF — Ta 120 10 2 IFP — Duty cycle 120 Ta = 25˚C IF — VF Ta = 25˚C 100 IF (mA) IFP (A) 100 Allowable forward current 80 IF (mA) Forward current 1 10 10 2 10 80 Pulse forward current 60 1 60 40 40 10 –1 20 20 0 – 25 0 20 40 60 80 100 10 –2 10 –1 0 0 0.4 0.8 1.2 1.6 2.0 Ambient temperature Ta (˚C ) Duty cycle (%) Forward voltage VF (V) IFP — VF 10 4 120 ∆PO — IF Ta = 25˚C 10 3 ∆PO — IFP Ta = 25˚C (1) tw = 10µs Duty Cycle = 0.1% (2) DC (1) 10 IFP (mA) ∆PO ∆PO 60 10 3 100 10 2 Relative radiant power Pulse forward current 10 2 Relative radiant power 80 10 1 (2) 40 1 tw = 10µs Duty Cycle = 0.1% Ta = 25˚C 3 4 5 20 10 –1 10 –1 0 1 2 0 0 20 40 60 80 100 120 10 –2 1 10 10 2 10 3 10 4 Forward voltage VF (V) Forward current IF (mA) Pulse forward current IFP (mA) VF — Ta 1.6 10 ∆PO — Ta IF = 100mA 1000 λP — Ta IF = 100mA λP (nm) Peak emission wavelength 0 40 80 1 10 –1 – 40 VF (V) 1.2 Relative radiant power 50mA 10mA 1mA 0.8 ∆PO IF = 100mA 980 960 Forward voltage 940 0.4 920 0 – 40 0 40 80 120 900 – 40 0 40 80 120 Ambient temperature Ta (˚C ) Ambient temperature Ta (˚C ) Ambient temperature Ta (˚C ) 2 Infrared Light Emitting Diodes LN52 Spectral characteristics 100 IF = 100mA Ta = 25˚C Directivity characteristics 0˚ 100 80 60 40 10˚ 20˚ 30˚ 40˚ 10 2 Frequency characteristics Ta = 25˚C Relative radiant intensity(%) Relative radiant intensity (%) 80 50˚ 60˚ 70˚ 80˚ 90˚ 10 60 20 Modulation output 1 40 10 –1 20 0 800 850 900 950 1000 1050 1100 10 –2 10 10 2 10 3 10 4 Wavelength λ (nm) Frequency f (kHz) 3