LNA2603F

Infrared Light Emitting Diodes LNA2603F (LN155) GaAs Infrared Light Emitting Diode Unit : mm Not soldered 0.8 max. For optical control systems 1.5±0.2 Features High-power output, high-efficiency : PO = 6 mW (typ.) Emitted light spectrum suited for silicon photodetectors : λP = 940 nm (typ.) Long lifetime, high reliability Thin side-view type package 3.9±0.25 4.5±0.15 3.5±0.15 2.1±0.15 1.6±0.15 0.8±0.1 12.8 min. (2.95) 2-1.2±0.3 2-0.45±0.15 0.45±0.15 1 2.54 2 Absolute Maximum Ratings (Ta = 25˚C) Parameter Power dissipation Forward current (DC) Pulse forward current Reverse voltage (DC) Operating ambient temperature Storage temperature * Symbol PD IF IFP * Ratings 160 100 1.5 3 –25 to +85 – 40 to +100 Unit mW mA A V ˚C ˚C 1: Anode 2: Cathode VR Topr Tstg f = 100 Hz, Duty cycle = 0.1 % Electro-Optical Characteristics (Ta = 25˚C) Parameter Radiant power Peak emission wavelength Spectral half band width Forward voltage (DC) Reverse current (DC) Capacitance between pins Rise time Fall time Half-power angle Symbol PO λP ∆λ VF IR Ct tr tf θ Conditions IF = 50mA IF = 50mA IF = 50mA IF = 100mA VR = 3V VR = 0V, f = 1MHz IFP = 100mA The angle in which radiant intencity is 50% min 3 typ 6 940 50 1.3 45 1 1 80 max Unit mW nm nm 1.6 10 V µA pF µs µs deg. Note) The part number in the parenthesis shows conventional part number. 1 Infrared Light Emitting Diodes LNA2603F IF — Ta 120 10 2 IFP — Duty cycle tw = 10µs Ta = 25˚C 10 4 IFP — VF tw = 10µs f = 100Hz Ta = 25˚C IF (mA) IFP (mA) Pulse forward current 10 –1 1 10 10 2 IFP (A) 100 10 3 10 Allowable forward current 80 Pulse forward current 1 10 2 60 10 –1 10 40 20 10 –2 1 0 – 25 0 20 40 60 80 100 10 –3 10 –2 10 –1 0 1 2 3 4 5 Ambient temperature Ta (˚C ) Duty cycle (%) Forward voltage VF (V) ∆PO — IFP 10 3 (1) tw = 10µs f = 100Hz (2) DC Ta = 25˚C 1.6 VF — Ta 10 IF = 100mA ∆PO — Ta IF = 50mA Relative radiant power ∆PO VF (V) 10 2 1.2 50mA 1mA 0.8 Forward voltage 10 (1) Relative radiant power ∆PO 1 1 (2) 0.4 10 –1 10 –2 1 10 10 2 10 3 10 4 0 – 40 0 40 80 120 10 –1 – 40 0 40 80 Pulse forward current IFP (mA) Ambient temperature Ta (˚C ) Ambient temperature Ta (˚C ) λP — Ta 1000 IF = 50mA 100 Spectral characteristics IF = 50mA Ta = 25˚C Directivity characteristics 0˚ 100 10˚ 20˚ 30˚ 40˚ Peak emission wavelength λP (nm) Relative radiant intensity(%) Relative radiant intensity (%) 980 80 80 60 40 50˚ 60˚ 70˚ 80˚ 90˚ 100˚ 110˚ 120˚ 960 60 20 940 40 920 20 130˚ 140˚ 900 940 980 1020 1060 1100 900 – 40 0 40 80 120 0 860 Ambient temperature Ta (˚C ) Wavelength λ (nm) 2 Caution for Safety Gallium arsenide material (GaAs) is used in this product. DANGER Therefore, do not burn, destroy, cut, crush, or chemically decompose the product, since gallium arsenide material in powder or vapor form is harmful to human health. Observe the relevant laws and regulations when disposing of the products. Do not mix them with ordinary industrial waste or household refuse when disposing of GaAs-containing products. Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. (2) The technical information described in this material is limited to showing representative characteristics and applied circuit examples of the products. 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