ON1004

Transmissive Photosensors (Photo lnterrupters) CNA1302K (ON1004) Photo lnterrupter For contactless SW, object detection ■ Overview CNA1302K is an ultraminiature, highly reliable transmissive photosensor in which a high efficiency GaAs infrared light emitting diode chip and a high sensitivity Si phototransistor chip are integrated in a double molded resin package. 4.0 min. A Unit: mm Slit width (0.3) A' 5.0 1.5 (1.0) 2.8 2.0 1.5 Device center 3.9 (1.5) SEC. A-A' 4.2 (C0.5) Gate the rest 0.3 max. φ1.5 -0 Not soldered 1.0 max. +0.1 ■ Features • Ultraminiature: 4.2 mm × 5.0 mm (height: 5.2 mm) • Fast response: tr , tf = 35 µs (typ.) • Highly precise position detection: 0.15 mm • Gap width: 2.0 mm 5.2 (C0.3) 2.4 2-0.25 *3.8 2-0.5 *2.54 ■ Absolute Maximum Ratings Ta = 25°C Parameter Input (Light Reverse voltage Power dissipation *1 Output (Photo Collector-emitter voltage transistor) (Base open) Emitter-collector voltage (Base open) Collector current Collector power dissipation *2 Temperature Operating ambient temperature Storage temperature emitting diode) Forward current Symbol VR IF PD VCEO VECO IC PC Topr Tstg Rating 6 50 75 35 6 20 75 −25 to +85 −40 to +100 Unit V mA mW V V mA mW °C °C 1: Anode 2: Cathode 3: Collector 4: Emitter 2 4 PISMR104-003 Package (Note) 1. Tolerance unless otherwise specified is ±0.2 2. ( ) Dimension is reference 3. * is dimension at the root of leads 4. Burrs should be less than 0.15 mm 1 3 Note) *1: Input power derating ratio is 1.0 mW/°C at Ta ≥ 25°C. *2: Output power derating ratio is 1.0 mW/°C at Ta ≥ 25°C. ■ Electrical-Optical Characteristics Ta = 25°C ± 3°C Parameter Input Forward voltage characteristics Reverse current Output Collector-emitter cutoff current characteristics (Base open) Transfer Collector current Rise time * Fall time * Symbol VF IR ICEO IC tr tf IF = 20 mA VR = 3 V VCE = 20 V VCE = 5 V, IF = 5 mA IF = 10 mA, IC = 40 µA VCC = 5 V, IC = 0.1 mA RL = 1 000 Ω 35 35 100 Conditions Min Typ 1.2 Max 1.4 10 100 400 0.4 Unit V µA nA µA V µs µs characteristics Collector-emitter saturation voltage VCE(sat) Note) 1. Input and output are practiced by electricity. 2. This device is designed be disregarded radiation. 3. *: Switching time measurement circuit Sig. in VCC (Input pulse) (Output pulse) tr tf 90% 10% tr : Rise time tf : Fall time Sig. out 50Ω RL Note) The part number in the parenthesis shows conventional part number. Publication date: April 2004 SHG00022BED 1 CNA1302K IF , I C  T a 60 60 IF 50 50 IF  V F Ta = 25°C 1.6 VF  T a Forward current IF , collector current IC (mA) IF = 50 mA Forward current IF (mA) Forward voltage VF (V) 1.2 10 mA 40 40 1 mA 0.8 30 IC 20 30 20 0.4 10 10 0 −25 0 20 40 60 80 100 0 0 0.4 0.8 1.2 1.6 2.0 2.4 0 −40 0 40 80 Ambient temperature Ta (°C ) Forward voltage VF (V) Ambient temperature Ta (°C ) IC  I F 5 VCE = 5 V Ta = 25°C 3 IC  VCE Ta = 25°C 120 ∆IC  Ta VCE = 5 V IF = 5 m A Relative collector current ∆IC (%) 4 100 Collector current IC (mA) Collector current IC (mA) 2 80 3 60 2 1 IF = 20 mA 15 mA 10 mA 5 mA 2 mA 40 1 20 0 0 5 10 15 20 25 0 0 1 2 3 4 5 6 0 −40 0 40 80 Forward current IF (mA) Collector-emitter voltage VCE (V) Ambient temperature Ta (°C ) ICEO  Ta Collector-emitter cutoff current (Base open) ICEO (µA) 1 VCE = 20 V 103 tr  I C VCC = 5 V Ta = 25°C 103 tf  I C VCC = 5 V Ta = 25°C 10 −1 102 102 RL = 2 k Ω 1 kΩ 10 100 Ω Rise time tr (µs) Fall time tf (µs) 10 −2 RL = 2 kΩ 10 1 kΩ 100 Ω 10 −3 1 10 −4 1 10 −5 −40 0 40 80 10 −1 10 −2 10 −1 1 10 10 −1 10 −2 10 −1 1 10 Ambient temperature Ta (°C ) Collector current IC (mA) Collector current IC (mA) 2 SHG00022BED CNA1302K ∆IC  d (1) 100 VCE = 5 V Ta = 25°C IF = 5 mA Criterion 0 d 60 100 ∆IC  d (2) VCE = 5 V Ta = 25°C IF = 5 mA Criterion 0 d Relative collector current ∆IC (%) 80 Relative collector current ∆IC (%) 4 80 60 40 40 20 20 0 0 1 2 3 0 0 0.5 1.0 1.5 2.0 2.5 Distance d (mm) Distance d (mm) SHG00022BED 3 Caution for Safety ■ This product contains Gallium Arsenide (GaAs). DANGER GaAs powder and vapor are hazardous to human health if inhaled or ingested. Do not burn, destroy, cut, cleave off, or chemically dissolve the product. Follow related laws and ordinances for disposal. The product should be excluded form general industrial waste or household garbage. Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technical information described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. (2) The technical information described in this material is limited to showing representative characteristics and applied circuits examples of the products. 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