ON3171

Optoisolators (Photocouplers) CNC1S171 Optoisolator For isolated signal transmission Features High current transfer ratio : CTR >50% High I/O isolation voltage : VISO = 5000 Vrms (min.) Fast response : tr = 2 µs, tf = 3 µs(typ.) Low dark current : ICEO < 100nA VDE approved (VDE0884) UL listed (No. E79920) BSI certified (BS415 No. 7889, BS7002 No. 7890) SEMKO certified (No. 9625004) DEMKO certified (No. 305848) NEMKO certified (No. 199633176) FIMKO certified (No. 191784) CSA approved (No. CA109151) 4.58±0.3 Unit : mm 5.0 max. 0.3 min. 1 2 4 3 4-0.5±0.1 4-1.2±0.15 2.54±0.25 2.54 min. 7.62±0.3 6.2±0.5 3.85±0.3 2.0 0.25 –0 10~12 +0.15 Absolute Maximum Ratings (Ta = 25˚C) Parameter Reverse voltage (DC) Forward current (DC) Input (Light emitting diode) Pulse forward current Power dissipation Collector current Output (Photo Collector to emitter voltage transistor) Emitter to collector voltage Collector power dissipation Isolation voltage, input to output Total power dissipation Operating ambient temperature Storage temperature Symbol Ratings VR IF IFP*1 PD *2 Unit V mA A mW mA V V mW Vrms mW ˚C ˚C 1 4 6 50 1 75 50 80 7 150 5000 200 2 Pin connection 3 1: Anode 2: Cathode 3: Emitter 4: Collector IC VCEO VECO PC *3 VISO PT Topr –30 to +100 Tstg –55 to +125 Pulse width ≤ 100 µs, repeat 100 pps Input power derating ratio is 0.75 mW/˚C at Ta ≥ 25˚C. *3 Output power derating ratio is 1.5 mW/˚C at Ta ≥ 25˚C. *1 *2 Electrical Characteristics (Ta = 25˚C) Parameter Input Forward voltage (DC) characteristics Capacitance between pins Collector cutoff current Output Collector to emitter voltage characteristics Collector to emitter capacitance DC current transfer ratio Isolation voltage, input to output Transfer Isolation resistance, input to output characteristics Rise time Fall time *1 DC *2 *3 Symbol IR VF Ct VR = 3 V IF = 50mA Conditions min typ 1.35 15 5 max 10 1.5 100 Unit µA V pF nA V pF Reverse current (DC) VR = 0V, f = 1MHz 80 ICEO VCE = 20V VCEO IC = 100µA CC VISO CISO RISO tr*2 tf*3 VCE = 10V, f = 1MHz 50 5000 t = 1 min., RH < 60% f = 1MHz VISO = 500V VCC = 10V, IC = 5mA, RL = 100Ω 1011 CTR*1*4 VCE = 10V, IF = 5mA 10 600 0.7 2 3 0.1 0.2 % Vrms pF Ω µs µs V Isolation capacitance, input to output Collector to emitter saturation voltage VCE(sat) IF = 20mA, IC = 1mA current transfer ratio (CTR) is a ratio of output current against DC input current. tr : Time required for the collector current to increase from 10% to 90% of its final value tf : Time required for the collector current to decrease from 90% to 10% of its initial value 1 CNC1S171 Optoisolators (Photocouplers) *4 CTR classifications Q 50 to 120 R 100 to 250 S 200 to 600 Class CTR (%) PC , PD — Ta Collector power dissipation , power dissipation PC , PD (mW) 160 PC 60 IF — VF 10 2 Ta = 25˚C 50 VCC = 10V Ta = 25˚C IC — IF IC (mA) Collector current 120 IF (mA) 10 40 Forward current 80 PD 30 1 20 40 10 –1 10 0 – 20 0 0 20 40 60 80 100 120 0 0.9 1.0 1.1 1.2 1.3 1.4 10 –2 10 –1 1 10 10 2 Ambient temperature Ta (˚C ) Forward voltage VF (V) Forward current IF (mA) IC — VCE 40 50mA 40mA 10 2 IC — VCE(sat) Ta = 25˚C 160 IC — Ta VCC = 5V IC (mA) IC (mA) 30 IF = 50mA 10 20mA 10mA 5mA IC (%) Relative output current 30mA 25mA 120 IF = 10mA 5mA 10mA 1mA 5mA 1mA 80 Collector current 20 20mA 15mA 12mA 10mA Collector current 1 2mA 10 0 0 8 16 9mA 8mA 7mA 6mA 5mA 4mA 3mA 2mA 1mA 24 32 40 40 10 –1 0 0.1 0.2 0.3 0.4 0.5 0.6 0 – 50 0 50 100 Collector to emitter voltage VCE (V) Collector to emitter saturation voltage VCE(sat) (V) Ambient temperature Ta (˚C ) 2 Optoisolators (Photocouplers) CNC1S171 ICEO — Ta 10 VCE = 30V 20V 1 10V 10 10 2 tr — IC VCC = 10V Ta = 25˚C 10 2 tf — IC VCC = 10V Ta = 25˚C RL = 1kΩ 500Ω 100Ω 1 ICEO (µA) tr (µs) 10 –1 500Ω 100Ω 1 Rise time Dark current 10 –2 10 –1 10 –3 Sig.IN Sig. OUT 50Ω VCC Sig. OUT RL 90% 10% Fall time tf (µs) RL = 1kΩ 10 10 –1 Sig.IN Sig. OUT 50Ω VCC Sig. OUT RL 90% 10% ,, ,, 10 –4 – 40 – 20 0 20 40 60 80 100 10 –2 10 –1 tr tf 10 2 ,, 10 –2 10 –1 1 td tr 10 td tf 10 2 1 10 Ambient temperature Ta (˚C ) Collector current IC (mA) Collector current IC (mA) Frequency characteristics 10 Ta = 25˚C Measurement circuit of frequency characteristics +10V +10V 50kΩ 100µF 16V P (dB) Relative power output 1 ,, , Sig.IN – 50Ω IF = 5mA 2mA 10 –1 Sig.OUT + 10 –2 5kΩ 50Ω Sig.OUT 50Ω 10 –3 1 10 10 2 10 3 Frequency f (kHz) ,, , ,, 3