PNA2602

Darlington Phototransistors PNA2602 Darlington Phototransistor Unit : mm For optical control systems Features Darlington output, high sensitivity Easy to combine light emission and photodetection on same printed circuit board Small size, thin side-view type package 4.5±0.3 Not soldered ø3.5±0.2 4.8±0.3 2.4 2.4 4.2±0.3 2.3 1.9 2.8 1.8 1.0 12.8 min. 10.0 min. 2-0.98±0.2 2-0.45±0.15 0.45±0.15 2.54 R1.75 1.2 Absolute Maximum Ratings (Ta = 25˚C) Parameter Collector to emitter voltage Emitter to collector voltage Collector current Collector power dissipation Operating ambient temperature Storage temperature Symbol VCEO VECO IC PC Topr Tstg Ratings 20 5 30 100 –25 to +80 –30 to +100 Unit V V mA mW ˚C ˚C 1 2 1: Emitter 2: Collector Electro-Optical Characteristics (Ta = 25˚C) Parameter Dark current Collector photo current Peak sensitivity wavelength Acceptance half angle Response time Collector saturation voltage *1 Symbol ICEO ICE(L) λP θ tr, tf*2 VCE(sat) VCE = 10V Conditions VCE = 10V, L = 2 VCE = 10V Measured from the optical axis to the half power point VCC = 10V, ICE(L) = 5mA, RL = 100Ω ICE(L) = 1mA, L = 100 lx*1 lx*1 min 0.2 typ 0.1 1 800 35 100 0.7 max 0.5 Unit µA mA nm deg. µs 1.5 V Measurements were made using a tungsten lamp (color temperature T = 2856K) as a light source. *2 Switching time measurement circuit Sig.IN VCC (Input pulse) Sig.OUT (Output pulse) 90% 10% td tr tf td : Delay time tr : Rise time (Time required for the collector photo current to increase from 10% to 90% of its final value) tf : Fall time (Time required for the collector photo current to decrease from 90% to 10% of its initial value) ,, ,, 50Ω RL 1 PNA2602 Darlington Phototransistors PC — Ta 120 32 ICE(L) — VCE 10 3 Ta = 25˚C T = 2856K ICE(L) — L ICE(L) (mA) VCE = 10V Ta = 25˚C T = 2856K PC (mW) 100 ICE(L) (mA) PC = 100mW 24 10 2 Collector power dissipation 80 Collector photo current L = 30 lx 16 20 lx 10 lx 8 5 lx 2 lx 1 lx 0 4 8 12 16 20 24 Collector photo current 60 10 40 1 20 0 – 20 0 20 40 60 80 100 0 10 –1 1 10 10 2 10 3 Ambient temperature Ta (˚C ) Collector to emitter voltage VCE (V) Illuminance L (lx) ICE(L) — Ta 10 VCE = 10V T = 2856K 10 2 ICEO — Ta 100 VCE = 10V Spectral sensitivity characteristics Ta = 25˚C ICE(L) (mA) 10 1 ICEO (µA) Collector photo current 10 –1 Relative sensitivity 0 20 40 60 80 100 1 S (%) 10 –2 10 –3 – 20 80 60 Dark current 40 10 –1 20 10 –2 – 40 0 40 80 120 0 200 400 600 800 1000 1200 Ambient temperature Ta (˚C ) Ambient temperature Ta (˚C ) Wavelength λ (nm) Directivity characteristics 0˚ 100 Sig.IN 90 80 70 60 50 40 30 20 10˚ 20˚ tr — ICE(L) VCC Sig. OUT RL 90% 10% Sig.IN Sig. OUT 50Ω tf — ICE(L) VCC Sig. OUT RL 90% 10% Relative sensitivity S (%) ,, , 30˚ tr (µs) 40˚ 50˚ 60˚ 70˚ 80˚ 90˚ Rise time Fall time 10 3 tf (µs) RL = 1kΩ 500Ω , 10 3 10 2 10 10 –2 10 –1 Sig. OUT 50Ω tr td tf tr td tf RL = 1kΩ 500Ω 10 2 100Ω 100Ω VCC = 10V Ta = 25˚C 10 –1 1 10 10 10 –2 VCC = 10V Ta = 25˚C 1 10 Collector photo current ICE(L) (mA) Collector photo current ICE(L) (mA) 2