PNA2W01M

Darlington Phototransistors PNA2W01M Darlington Phototransistor Unit: mm For optical control systems Type number : Emitter mark (Black) s Features • High sensitivity • Easy to combine with red and infrared light emitting diodes • Small size designed for easier mounting to printed circuit board 0.5±0.1 1 10.0 min. 3.2±0.3 φ1.8 3.2±0.3 10.0 min. 2 ° (0.7) (0.7) 0.15 1.05±0.1 R0.9 s Absolute Maximum Ratings Ta = 25°C Parameter Collector to emitter voltage Emitter to collector voltage Collector current Collector power dissipation Operating ambient temperature Storage temperature Symbol VCEO VECO IC PC Topr Tstg Rating 20 5 30 100 −25 to +85 −30 to +100 Unit V V mA mW °C °C 2.8±0.2 0.85±0.15 s Electro-Optical Characteristics Ta = 25°C Parameter Dark current Collector photo current Peak sensitivity wavelength Acceptance half angle Response time Collector saturation voltage Symbol ICEO ICE(L) λP θ tr , tf *2 VCE(sat) VCE = 10 V VCE = 10 V, L = 2 lx VCE = 10 V Measured from the optical axis to the half power point VCC = 10 V, ICE(L) = 5 mA, RL = 100 Ω ICE(L) = 1 mA, L = 100 lx *1 *1 Conditions Min Typ 0.1 Max 0.5 2.2±0.15 1.8 2.8±0.2 1.8 1: Collector 2: Emitter Unit µA mA nm ° µs 0.5 3 800 18 200 0.7 1.5 Note) *1: Measurements were made using a tungsten lamp (color temperature T = 2856 K) as a light source. *2: Switching time measurement circuit Sig. in VCC (Input pulse) Sig. out (Output pulse) RL 90% 10% td tr tf td : Delay time tr : Rise time (Time required for the collector photo current to increase from 10% to 90% of its final value) tf : Fall time (Time required for the collector photo current to decrease from 90% to 10% of its initial value) 50 Ω 0.4±0.1 45 V 1 PNA2W01M P C  Ta 120 32 Darlington Phototransistors ICE(L)  VCE Ta = 25°C T = 2 856 K PC = 100 mW 24 103 ICE(L)  L VCE = 10 V Ta = 25°C T = 2 856 K Collector power dissipation PC (mW) Collector photo current ICE(L) (mA) 100 Collector photo current ICE(L) (mA) 2 lx 1 lx 102 80 60 16 L = 10 lx 10 40 5 lx 8 1 20 0 −20 0 20 40 60 80 100 0 0 4 8 12 16 20 24 10−1 1 10 102 103 Ambient temperature Ta (°C) Collector to emitter voltage VCE (V) Illuminance L (lx) ICEO  Ta 102 VCE = 10 V 102 ICE(L)  Ta VCE = 10 V T = 2 856 K 100 Spectral sensitivity characterisitics VCE = 10 V Ta = 25°C 10 1 Relarive sensitivity ∆S (%) 0 40 80 120 10 Collector photo current ICE(L) (mA) 80 Dark current ICEO (µA) 60 10−1 40 1 10−2 20 10−3 −20 0 20 40 60 80 100 10−1 −40 0 200 400 600 800 1 000 1 200 Ambient temperature Ta (°C) Ambient temperature Ta (°C) Wavelength λ (nm) Directivity characteristics 0° 10° 100 20° tr  ICE(L) 105 VCC = 10 V Ta = 25°C 105 tf  ICE(L) VCC = 10 V Ta = 25°C Relarive sensitivity ∆S (%) 90 80 70 60 50 40 30 20 30° 104 104 Rise time tr (µs) 40° 50° 60° 70° 80° 90° Fall time tf (µs) 103 RL = 1 kΩ 500 Ω 103 RL = 1 kΩ 500 Ω 100 Ω 102 100 Ω 102 10 10−2 10−1 1 10 10 10−2 10−1 1 10 Collector photo current ICE(L) (mA) Collector photo current ICE(L) (mA) 2