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BAS116WS

BAS116WS

  • 厂商:

    PANJIT(强茂)

  • 封装:

  • 描述:

    BAS116WS - SURFACE MOUNT, LOW LEAKAGE SWITCHING DIODE - Pan Jit International Inc.

  • 数据手册
  • 价格&库存
BAS116WS 数据手册
BAS116WS SURFACE MOUNT, LOW LEAKAGE SWITCHING DIODE VOLTAGE FEATURES • Suface mount package ideally suited for automatic insertion. • Very low leakage current. 2pA typical at VR=75V. • Low capacitance. 2pF max at VR=0V, f=1MHz • In compliance with EU RoHS 2002/95/EC directives .038(.95) .027(.70) 100 Volts POWER 200mWatts SOD-323 Unit: inch (mm) .078(1.95) .068(1.75) .054(1.35) .045(1.15) .014(.35) .107(2.7) .090(2.3) MECHANICAL DATA • Case: SOD-323 plastic • Terminals: Solderable per MIL-STD-750, Method 2026 • Approx weight: 0.00014 gram • Marking: PA .012(.30)MIN. ABSOLUTE RATINGS (each diode) PA RA ME TE R R e ve r s e Vo l t a g e P e a k R e ve r s e Vo l t a g e C o nti nuo us F o r wa r d C ur r e nt N o n- r e p e t i t i ve P e a k F o r w a r d S ur g e C ur r e nt a t t = 1 . 0 us I S ym b o l VR V RM I Va lue 75 100 0.2 2.0 Uni ts V V A A F FSM THERMAL CHARACTERISTICS PA RA ME TE R P o we r D i s s i p a ti o n (No te 1 ) The r m a l Re s i s ta nc e , J unc ti o n to A m b i e nt ( No te 1 ) J u n c t i o n Te m p e r a t u r e S t o r a g e Te m p e r a t u r e S ym b o l P TOT R θJ A TJ T S TG Va lue 200 625 -55 to 150 -55 to 150 O .002(.05) .006(.15) .009(.25) Uni ts mW C /W O C C O NOTE: 1. FR-5 Board = 1.0 x 0.75 x 0.062 in. STAD-SEP.07.2007 PAGE . 1 BAS116WS ELECTRICAL CHARACTERISTICS (each diode) (TA=25OC, unless otherwise noted) PA RA ME TE R R e ve r s e B r e a k d o w n Vo l t a g e R e ve r s e C ur r e nt S ym b o l V (B R) I Te s t C o n d i t i o n I R = 1 0 0 uA V R= 7 5 V V R= 7 5 V , TJ= 1 5 0 IF = 1 m A IF = 1 0 m A IF = 5 0 m A IF = 1 5 0 m A V R= 0 V , f = 1 M H Z IF = IR = 1 0 m A , R L = 1 0 0 Ω M IN . 75 0.002 8.0 5 80 0.9 1.0 1.1 1.25 2.0 3.0 T YP. MA X . Uni ts V nA R O C F o rwa rd Vo lta g e VF V To t a l C a p a c i t a n c e R e v e r s e R e c o v e r y Ti m e CT trr pF us CHARACTERISTIC CURVES (each diode) 10 1000 I R , Reverse Leakage(nA) 1.0 I F , Forward current (mA) 100 T A =-25 C O 0.1 V R =75V 10 0.01 1.0 T A =75 C O T A =125 C O T A =25 C O 0.001 0 50 100 150 200 0.1 0.2 0.4 0.6 0.8 1.0 1.2 Tj, Junction Temperature (Deg C) V F , Forward Voltage (V) Fig. 1-Reverse Leakage vs. Junction Temperature Fig. 2-Forward Current vs. Forward Voltage 1.4 C T , Total Capacitance (pF) 1.2 1 0.8 0.6 0.4 0.2 0 0 20 40 60 80 100 V R , Reverse Voltage ( V) Fig. 3- Total capacitance vs. Reverse Voltage STAD-SEP.07.2007 PAGE . 2 BAS116WS MOUNTING PAD LAYOUT ORDER INFORMATION • Packing information T/R - 12K per 13" plastic Reel T/R - 5.0K per 7" plastic Reel LEGAL STATEMENT Copyright PanJit International, Inc 2007 The information presented in this document is believed to be accurate and reliable. The specifications and information herein are subject to change without notice. Pan Jit makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose. Pan Jit products are not authorized for use in life support devices or systems. Pan Jit does not convey any license under its patent rights or rights of others. STAD-SEP.07.2007 PAGE . 3
BAS116WS 价格&库存

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