PJB24N10

PJB24N10 100V N-Channel Enhancement Mode MOSFET FEATURES • RDS(ON), VGS@10V,IDS@30A=24mΩ • Low On Resistance • Excellent Gate Charge x RDS(ON) Product ( FOM ) • Fully Characterized Avalanche Voltage and Current • Specially Designed for AC Adapter, High-Frequency Switch and Synchronous Rectification • Component are in compliance with EU RoHS 2002/95/EC directives MECHANICAL DATA • Case: TO-263 Molded Plastic • Terminals : Solderable per MIL-STD-750,Method 2026 Drain ORDERING INFORMATION TYPE PJB24N10 MARKING B24N10 PACKAGE TO-263 PACKING 800PCS/REEL Gate Source Maximum RATINGS and Thermal Characteristics (TA=25OC unless otherwise noted ) PA RA ME TE R D ra i n-S o urc e Vo lta g e Ga te - S o urc e Vo lta g e C o nti nuo us D ra i n C urre nt P uls e d D ra i n C urre nt 1) S ymb o l V DS V GS ID ID M TA = 2 5 OC Li mit 100 +2 0 42 160 105 0 .8 4 -5 5 to +1 5 0 680 1 .2 6 2 .5 Uni ts V V A A W O M a xi mum P o we r D i s s i p a ti o n D e ra ti ng F a c to r Op e ra ti ng J unc ti o n a nd S to ra g e Te m p e ra ture Ra ng e PD T J ,T S TG E AS R θJC R θJA C Avalanche Energy with Single Pulse IAS=17A, VDD=80V, L=4.7mΗ mJ O Junction-to-Case Thermal Resistance Junction-to Ambient Thermal Resistance Note: 1. Maximum DC current limited by the package C /W C /W O PAN JIT RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE June 03, 2010-REV.00 PAGE . 1 PJB24N10 ELECTRICAL CHARACTERISTICS ( TA=25OC unless otherwise noted ) P a ra m e te r S ymb o l Te s t C o nd i ti o n M i n. Typ . Ma x. Uni ts S ta ti c D r a i n- S o urc e B re a k d o wn Vo lta g e B V D SS V GS (th) R D S ( o n) I DSS I GS S V GS =0 V, I D =2 5 0 uA V D S =V GS , I D =2 5 0 uA VGS= 10V, I D= 30A VDS=80V, VGS=0V V GS =+ 2 0 V, V D S =0 V 100 2 .0 - 18.6 - 4 .0 24 1 +100 V V mΩ uA nΑ Ga te Thre s ho ld Vo lta g e D ra i n-S o urc e On-S ta te Re s i s ta nc e Ze ro Ga te Vo lta g e D ra i n C urre nt Gate Body Leakage Dynamic To ta l Ga te C ha rg e Ga te -S o urc e C ha rg e Ga te -D ra i n C ha rg e Turn-On D e la y Ti me Turn-On Ri s e Ti m e Turn-Off D e la y Ti me Turn-Off F a ll Ti m e Inp ut C a p a c i ta nc e Outp ut C a p a c i ta nc e Re ve rs e Tra ns fe r C a p a c i ta nc e t Qg Q Q t gs - 6 0 .6 8 .2 21.4 18.4 9.2 56 1 8 .8 1450 155 110 78 26 12 ns 68 26 3200 200 165 pF nC V D S = 5 0 V, ID =3 0 A , V GS =1 0 V - gd d (o n) t r d (o ff) VDD=50V, I D =1A V GS =1 0 V, RG=1.6Ω - t C C C f i ss o ss V D S = 5 0 V, V GS =0 V f=1 .0 MH Z - rs s S o urc e - D ra i n D i o d e Ma x. D i o d e F o rwa rd C urre nt IS V SD IS = 3 0 A , V GS =0 V - - 42 1 .3 A V D i o d e F o rwa rd Vo lta g e NOTE: Plus Test : Pluse Width < 300us, Duty Cycle < 2%. Switching Test Circuit V IN V DD Gate Charge Test Circuit V GS V OUT V DD RL RL RG 1mA RG June 03, 2010-REV.00 PAGE . 2 PJB24N10 Typical Characteristics Curves ( Ta=25℃, unless otherwise noted) ID - Drain-to-Source Current (A) VGS=10V~7V 80 60 40 5.0V 20 0 0 3 6 9 12 VDS - Drain-to-Source Voltage (V) 15 4.5V 6.0V ID - Drain Source Current (A) 100 100 80 60 40 VDS =10V TJ = 125oC 20 0 2 25oC -55oC 3 4 5 6 7 VGS - Gate-to-Source Voltage (V) Fig.1 Output Characteristric Fig.1 Fig.2 Transfer Characteristric 50 100 RDS(ON) - On Resistance(mΩ ) RDS(ON) - On Resistance(mΩ ) ID =30A 80 60 40 20 TJ =25oC 0 TJ =125oC 40 30 VGS=6.5V 20 VGS = 10V 10 0 0 20 40 60 ID - Drain Current (A) 80 4 5 6 7 8 9 VGS - Gate-to-Source Voltage (V) 10 Fig.3 On Resistance vs Drain Current Fig.4 On Resistance vs Gate to Source Voltage RDS(ON) - On-Resistance(Normalized) 2 1.8 1.6 1.4 1.2 1 0.8 0.6 -50 -25 0 25 50 75 100 125 150 TJ - Junction Temperature (oC) VGS =10 V ID =30A 5000 C - Capacitance (pF) f = 1MHz VGS = 0V 4000 3000 Ciss C C C 2000 1000 Coss 0 Crss 0 10 20 30 40 50 VDS - Drain-to-Source Voltage (V) Fig.5 On Resistance vs Junction Temperature June 03, 2010-REV.00 Fig.6 Capacitance PAGE. 3 PJB24N10 Typical Characteristics Curves ( Ta=25℃, unless otherwise noted) VGS - Gate-to-Source Voltage (V) 10 8 6 4 2 0 0 10 20 30 40 50 Qg - Gate Charge (nC) 60 VDS=50V ID =30A 100 IS - Source Current (A) VGS = 0V 10 TJ = 125oC 25oC 1 0.1 -55oC 0.01 0.2 0.4 0.6 0.8 1 1.2 1.4 VSD - Source-to-Drain Voltage (V) Fig. 7 Gate Charge Waveform Fig. Fig.8 Source-Drain Diode Forward Voltage Vth - G-S Threshold Voltage(Normalized) 1.2 ID = 250µA 1.1 1 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 100 125 150 TJ - Junction Temperature (oC) Fig.9 Breakdown Voltage vs Junction Temperature June 03, 2010-REV.00 PAGE. 4 PJB24N10 LEGAL STATEMENT Copyright PanJit International, Inc 2010 The information presented in this document is believed to be accurate and reliable. The specifications and information herein are subject to change without notice. Pan Jit makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose. Pan Jit products are not authorized for use in life support devices or systems. Pan Jit does not convey any license under its patent rights or rights of others. June 03, 2010-REV.00 PAGE . 5