0
登录后你可以
  • 下载海量资料
  • 学习在线课程
  • 观看技术视频
  • 写文章/发帖/加入社区
会员中心
创作中心
发布
  • 发文章

  • 发资料

  • 发帖

  • 提问

  • 发视频

创作活动
PJSD24

PJSD24

  • 厂商:

    PANJIT(强茂)

  • 封装:

  • 描述:

    PJSD24 - 400W LOW CLAMPING VOLTAGE SINGLE TVS FOR PROTECTION - Pan Jit International Inc.

  • 数据手册
  • 价格&库存
PJSD24 数据手册
PJSD05 SERIES 400W LOW CLAMPING VOLTAGE SINGLE TVS FOR PROTECTION This TVS/Zener Series has been designed to Protect Sensitive Equipment against ESD and to prevent Latch-Up events in very sensitive CMOS circuitry operating at 5V, 12V, 15V and 24Vdc .These devices come in an industry standard SOD123 package making them suitable for Portable/Computing Electronics, where the board space is a premium. SPECIFICATION FEATURES 400W Power Dissipation (8/20µs Waveform) Very Low Leakage Current IEC61000-4-2 ESD 15kV air, 8kV Contact Compliance SOD123 Package K A APPLICATIONS Personal Digital Assistant (PDA) Digital Cameras Portable Instrumentation Mobile Phones and Accessories Desktops, Laptops SOD123 SOD123 MAXIMUM RATINGS Rating Peak Pulse Power (8/20µs Waveform) ESD Voltage (HBM) Operating Temperature Range Storage Temperature Range Symbol P pp V ESD TJ Tstg Value 400 25 -55 to +125 -55 to +150 Units W kV °C °C ELECTRICAL CHARACTERISTICS Tj = 25°C PJSD05 Parameter Reverse Stand-Off Voltage Reverse Breakdown Voltage Reverse Leakage Current Clamping Voltage (8/20µs) Clamping Voltage (820µs) Off State Junction Capacitance Off State Junction Capacitance Symbol V WRM VBR IR Vc Vc Cj Cj I BR = 1 mA VR = 5V I pp = 5A I pp = 24A 0 Vdc Bias f = 1MHz 5 Vdc Bias f = 1MHz Conditions Min Typical Max 5 Units V V 6.0 20 7.5 16 550 235 µA V V pF pF 2/18/2009 Page 1 www.panjit.com PJSD05 Series ELECTRICAL CHARACTERISTICS Tj = 25°C PJSD12 Parameter Reverse Stand-Off Voltage Reverse Breakdown Voltage Reverse Leakage Current Clamping Voltage (8/20µs) Clamping Voltage (8/20µs) Off State Junction Capacitance Symbol VWRM VBR IR Vc Vc Cj I BR = 1mA VR = 12V I pp = 5A I pp = 17A 0 Vdc Bias f = 1MHz Conditions Min Typical Max 12 Units V V 13.3 1 14.5 23 180 µA V V pF PJSD15 Parameter Reverse Stand-Off Voltage Reverse Breakdown Voltage Reverse Leakage Current Clamping Voltage (8/20µs) Clamping Voltage (8/20µs) Off State Junction Capacitance Symbol VWRM VBR IR Vc Vc Cj I BR = 1mA VR = 15V I pp = 5A I pp = 14A 0 Vdc Bias f = 1MHz Conditions Min Typical Max 15 Units V V 16.7 1 19 28 165 µA V V pF PJSD24 Parameter Reverse Stand-Off Voltage Reverse Breakdown Voltage Reverse Leakage Current Clamping Voltage (8/20µs) Clamping Voltage (8/20µs) Off State Junction Capacitance Symbol VWRM VBR IR Vc Vc Cj I BR = 1mA VR = 24V I pp = 5A I pp = 11A 0 Vdc Bias f = 1MHz Conditions Min Typical Max 24 Units V V 26.7 1 29 37 120 µA V V pF 2/18/2009 Page 2 www.panjit.com PJSD05 SERIES TYPICAL CHARACTERISTICS Clamping voltage vs Ipp 8/20µs Surge 40 PJSD24 Surge Pulse Waveform Definition 110 100 90 80 70 60 50 40 30 20 10 0 0 Clamping Voltage, V 35 30 25 20 15 10 5 0 0 5 10 15 20 25 Peak Current, A PJSD15 PJSD12 PJSD05 Percent of Ipp 50% of Ipp @ 20µs Rise time 10-90% - 8µs 5 10 15 time, µsec 20 25 30 Capacitance vs. Biasing Voltage @1MHz 600 550 Capacitance, pF 500 450 400 350 300 250 200 0 1 2 3 4 5 Bias Voltage, Vdc PJSD05 Non-Repetitive Peak Pulse Power vs Pulse Time 1000 Peak Pulse Power - Ppp (W) 100 10 1 10 100 1000 Pulse Duration, µs 2/18/2009 Page 3 www.panjit.com PJSD05 SERIES PACKAGE DIMENSIONS AND BOND PAD LAYOUT 2/18/2009 Page 4 www.panjit.com
PJSD24 价格&库存

很抱歉,暂时无法提供与“PJSD24”相匹配的价格&库存,您可以联系我们找货

免费人工找货