EK42522-02

PE42522 Document Category: Product Specification UltraCMOS® SPDT RF Switch, 9 kHz–26.5 GHz Features Figure 1 • PE42522 Functional Diagram • Broad frequency support from 9 kHz to 26.5 GHz • High port to port isolation RFC ▪ 63 dB @ 3 GHz ▪ 58 dB @ 7.5 GHz ▪ 39 dB @ 13.5 GHz RF1 ▪ 28 dB @ 20 GHz RF2 ▪ 22 dB @ 26.5 GHz • HaRP™ technology enhanced 50Ω 50Ω ▪ Fast settling time CMOS Control Driver ▪ No gate and phase lag ▪ No drift in insertion loss and phase • Improved high frequency insertion loss and return loss performance with external matching V1 VSS_EXT • High ESD performance of 3.0 kV HBM on all pins • Packaging – 29-lead 4 × 4 mm LGA Applications • Test and measurement • Microwave backhaul • Radar Product Description The PE42522 is a HaRP™ technology-enhanced absorptive SPDT RF switch that supports a broad frequency range from 9 kHz to 26.5 GHz. This broadband general purpose switch offers excellent isolation, high linearity performance and has exceptional settling time making this device ideal for many broadband wireless applications. No blocking capacitors are required if DC voltage is not present on the RF ports. The PE42522 is manufactured on pSemi’s UltraCMOS® process, a patented variation of silicon-on-insulator (SOI) technology on a sapphire substrate. pSemi’s HaRP technology enhancements deliver high linearity and excellent harmonics performance. It is an innovative feature of the UltraCMOS process, offering the performance of GaAs with the economy and integration of conventional CMOS. ©2014–2022, pSemi Corporation. All rights reserved. • Headquarters: 9369 Carroll Park Drive, San Diego, CA, 92121 Product Specification DOC-12014-10 – (04/2022) www.psemi.com PE42522 UltraCMOS® SPDT RF Switch Optional External VSS Control For proper operation, the VSS_EXT control pin must be grounded or tied to the VSS voltage specified in Table 2. When the VSS_EXT control pin is grounded, FETs in the switch are biased with an internal negative voltage generator. For applications that require the lowest possible spur performance, VSS_EXT can be applied externally to bypass the internal negative voltage generator. Absolute Maximum Ratings Exceeding absolute maximum ratings listed in Table 1 may cause permanent damage. Operation should be restricted to the limits in Table 2. Operation between operating range maximum and absolute maximum for extended periods may reduce reliability. ESD Precautions When handling this UltraCMOS device, observe the same precautions as with any other ESD-sensitive devices. Although this device contains circuitry to protect it from damage due to ESD, precautions should be taken to avoid exceeding the rating specified in Table 1. Latch-up Immunity Unlike conventional CMOS devices, UltraCMOS devices are immune to latch-up. Table 1 • Absolute Maximum Ratings for PE42522 Parameter/Condition Min Max Unit Supply voltage, VDD –0.3 5.5 V Digital input voltage, V1 –0.3 3.6 V RF input power, CW (RFC–RFX)(1) 9 kHz–2.89 MHz >2.89 MHz–18 GHz >18–26.5 GHz Fig. 2, Fig. 3 33 Fig. 4 dBm dBm dBm RF input power, pulsed (RFC–RFX)(2) 9 kHz–2.89 MHz >2.89 MHz–18 GHz >18–26.5 GHz Fig. 2, Fig. 3 34 Fig. 4 dBm dBm dBm RF input power into terminated ports, CW (RFX)(1) 9 kHz–1.39 MHz >1.39 MHz–18 GHz >18–26.5 GHz Fig. 2, Fig. 3 22 Fig. 4 dBm dBm dBm +150 °C ESD voltage HBM, all pins(3) 3000 V ESD voltage MM, all pins(4) 150 V ESD voltage CDM, all pins(5) 500 V Storage temperature range –65 Page 2 of 23 DOC-12014-10 – (04/2022) www.psemi.com PE42522 UltraCMOS® SPDT RF Switch Table 1 • Absolute Maximum Ratings for PE42522 (Cont.) Parameter/Condition Min Max Unit Notes: 1) 100% duty cycle, all bands, 50Ω. 2) Pulsed, 5% duty cycle of 4620 µs period, 50Ω. 3) Human body model (MIL-STD 883 Method 3015). 4) Machine model (JEDEC JESD22-A115). 5) Charged device model (JEDEC JESD22-C101). Recommended Operating Conditions Table 2 list the recommending operating condition for PE42522. Devices should not be operated outside the recommended operating conditions listed below. Table 2 • Recommended Operating Condition for PE42522 Parameter Min Typ Max Unit 5.5 V 120 200 µA 3.4 5.5 V 50 80 µA –3.2 V Normal mode (VSS_EXT = 0V)(1) Supply voltage, VDD 2.3 Supply current, IDD Bypass mode (VSS_EXT = –3.4V)(2) Supply voltage, VDD 2.7 (VDD ≥3.4V for Table 3 full spec. compliance) Supply current, IDD Negative supply voltage, VSS_EXT –3.6 Negative supply current, ISS –40 –16 µA Normal or Bypass mode Digital input high, V1 1.17 3.6 V Digital input low, V1 –0.3 0.6 V RF input power, CW (RFC–RFX)(3) 9 kHz–2.89 MHz >2.89 MHz–18 GHz >18–26.5 GHz Fig. 2, Fig. 3 30 Fig. 4 dBm dBm dBm RF input power, pulsed (RFC–RFX)(4) 9 kHz–2.89 MHz >2.89 MHz–18 GHz >18–26.5 GHz Fig. 2, Fig. 3 32 Fig. 4 dBm dBm dBm DOC-12014-10 – (04/2022) Page 3 of 23 www.psemi.com PE42522 UltraCMOS® SPDT RF Switch Table 2 • Recommended Operating Condition for PE42522 (Cont.) Parameter Min Typ RF input power into terminated ports, CW (RFX)(3) 9 kHz–1.39 MHz >1.39 MHz–18 GHz >18–26.5 GHz Operating temperature range, TOP –40 Max Unit Fig. 2, Fig. 3 20 Fig. 4 dBm dBm dBm +85 °C +25 Notes: 1) Normal mode: connect VSS_EXT (pin 29) to GND (VSS_EXT = 0V) to enable internal negative voltage generator. 2) Bypass mode: use VSS_EXT (pin 29) to bypass and disable internal negative voltage generator. 3) 100% duty cycle, all bands, 50Ω. 4) Pulsed, 5% duty cycle of 4620 µs period, 50Ω. Electrical Specifications Table 3 provides the PE42522 key electrical specifications at 25 °C (ZS = ZL = 50Ω), unless otherwise specified. Normal mode(1) is at VDD = 3.3V and VSS_EXT = 0V. Bypass mode(2) is at VDD = 3.4V and VSS_EXT = –3.4V. Table 3 • PE42522 Electrical Specifications Parameter Path Condition Operating frequency Insertion loss(3) Min Typ 9 kHz RFC–RFX 9 kHz–10 MHz 10–3000 MHz 3000–7500 MHz 7500–10000 MHz 10000–13500 MHz 13500–18000 MHz 18000–20000 MHz 20000–24000 MHz 24000–26500 MHz Page 4 of 23 0.70 1.05 1.15 1.70 1.70 2.55 3.20 4.50 5.30 Max Unit 26.5 GHz As shown 0.85 1.40 1.50 2.15 2.40 3.25 4.50 5.80 6.95 dB dB dB dB dB dB dB dB dB DOC-12014-10 – (04/2022) www.psemi.com PE42522 UltraCMOS® SPDT RF Switch Table 3 • PE42522 Electrical Specifications (Cont.) Parameter Path Min Typ RFX–RFX 9 kHz–10 MHz 10–3000 MHz 3000–7500 MHz 7500–10000 MHz 10000–13500 MHz 13500–18000 MHz 18000–20000 MHz 20000–24000 MHz 24000–26500 MHz 70 62 48 42 36 26 23 19 18 80 64 50 44 38 28 25 21 20 dB dB dB dB dB dB dB dB dB RFC–RFX 9 kHz–10 MHz 10–3000 MHz 3000–7500 MHz 7500–10000 MHz 10000–13500 MHz 13500–18000 MHz 18000–20000 MHz 20000–24000 MHz 24000–26500 MHz 65 61 55 48 37 28 26 21 19 73 63 58 51 39 30 28 23 22 dB dB dB dB dB dB dB dB dB RFC–RFX 9 kHz–10 MHz 10–3000 MHz 3000–7500 MHz 7500–10000 MHz 10000–13500 MHz 13500–18000 MHz 18000–20000 MHz 20000–24000 MHz 24000–26500 MHz 23 18 16 15 20 13 7 5 6 dB dB dB dB dB dB dB dB dB RFC–RFX 9 kHz–10 MHz 10–3000 MHz 3000–7500 MHz 7500–10000 MHz 10000–13500 MHz 13500–18000 MHz 18000–20000 MHz 20000–24000 MHz 24000–26500 MHz 23 19 27 27 20 23 10 6 7 dB dB dB dB dB dB dB dB dB All ports 9 kHz–10 MHz 10–3000 MHz 3000–7500 MHz 7500–10000 MHz 10000–13500 MHz 13500–18000 MHz 18000–20000 MHz 20000–24000 MHz 24000–26500 MHz 30 23 15 13 14 8 6 3 2 dB dB dB dB dB dB dB dB dB Isolation Return loss (active port)(3) Return loss (RFC port)(3) Return loss (off port) Condition DOC-12014-10 – (04/2022) Max Unit Page 5 of 23 www.psemi.com PE42522 UltraCMOS® SPDT RF Switch Table 3 • PE42522 Electrical Specifications (Cont.) Parameter Path Input 0.1dB compression point(4) RFC–RFX Input IP2 RFC–RFX Input IP3 RFC–RFX Condition Min Typ Max Unit Fig. 2 Fig. 3 Fig. 4 dBm dBm dBm 10–18000 MHz 121 dBm 10–18000 MHz 59 dBm Settling time 50% CTRL to 0.05 dB final value 7 10 µs Switching time 50% CTRL to 90% or 10% of RF 3 4.5 µs Notes: 1) Normal mode: connect VSS_EXT (pin 29) to GND (VSS_EXT = 0V) to enable internal negative voltage generator. 2) Bypass mode: use VSS_EXT (pin 29) to bypass and disable internal negative voltage generator. 3) High frequency performance can be improved by external matching (see Figure 19–Figure 21). 4) The input 0.1dB compression point is a linearity figure of merit. Refer to Table 2 for the RF input power (50Ω). Switching Frequency Control Logic The PE42522 has a maximum 25 kHz switching rate in normal mode (pin 29 tied to ground). A faster switching rate is available in bypass mode (pin 29 tied to VSS_EXT). The rate at which the PE42522 can be switched is then limited to the switching time as specified in Table 3. Table 4 provides the control logic truth table for PE42522. Table 4 • Truth Table for PE42522 Switching frequency describes the time duration between switching events. Switching time is the time duration between the point the control signal reached 50% of the final value and the point the output signal reaches within 10% or 90% of its target value. State V1 RF1 ON 0 RF2 ON 1 Spur-Free Performance The typical spurious performance of the PE42522 in normal mode is –125 dBm (pin 29 tied to ground). If spur-free performance is desired, the internal negative voltage generator can be disabled by applying a negative voltage to VSS_EXT (pin 29). Hot-Switching Capability The maximum hot switching capability of the PE42522 is 20 dBm from 1.4 MHz to 18 GHz. The maximum hot switching capability below 1.4 MHz and above 18 GHz does not exceed the maximum RF CW terminated power, see Figure 2–Figure 4. Hot switching occurs when RF power is applied while switching between RF ports. Page 6 of 23 DOC-12014-10 – (04/2022) www.psemi.com PE42522 UltraCMOS® SPDT RF Switch Figure 2 • Power De-rating Curve (9 kHz–18 GHz) @ 25 °C Ambient (50?) P0.1 dB Compression @ 25°C Ambient Max. RF Input Power, Pulsed (≥ 2.7 MHz, 25°C Ambient) Max. RF Input Power, CW (≥ 2.7 MHz, 25°C Ambient) Max. RF Input Power, CW & Pulsed (< 2.7 MHz, 25°C Ambient) Max. RF Terminated Power, CW @ 25°C Ambient Input Power (dBm) 35 30 25 20 15 10 5 0 -5 Frequency (MHz) Figure 3 • Power De-rating Curve (9 kHz–18 GHz) @ 85 °C Ambient (50?) P0.1 dB Compression @ 85°C Ambient Max. RF Input Power, Pulsed (≥ 2.9 MHz, 85°C Ambient) Max. RF Input Power, CW (≥ 2.9 MHz, 85°C Ambient) Max. RF Input Power, CW & Pulsed (< 2.9 MHz, 85°C Ambient) Max. RF Terminated Power, CW @ 85°C Ambient Input Power (dBm) 35 30 25 20 15 10 5 0 -5 Frequency (MHz) DOC-12014-10 – (04/2022) Page 7 of 23 www.psemi.com PE42522 UltraCMOS® SPDT RF Switch Figure 4 • Power De-rating Curve (16–26.5 GHz) @ 25 °C and 85 °C Ambient (50?) Abs. Max. RF Input Power, Pulsed @ 25°C & 85°C Ambient P0.1 dB Compression / Abs. Max. RF Input Power, CW @ 25°C & 85°C Ambient Max. RF Input Power, Pulsed @ 25°C & 85°C Ambient Max. RF Input Power, CW @ 25°C & 85°C Ambient Abs. Max. RF Terminated Power @ 25°C & 85°C Ambient Max. RF Terminated Power, CW @ 25°C & 85°C Ambient 36 34 32 Input Power (dBm) 30 28 26 24 22 20 18 16 14 16 18 20 22 24 26 Frequency (GHz) Page 8 of 23 DOC-12014-10 – (04/2022) www.psemi.com PE42522 UltraCMOS® SPDT RF Switch Typical Performance Data Figure 5–Figure 17 show the typical performance data at 25 °C and VDD = 3.3V (ZS = ZL = 50Ω) unless otherwise specified. Figure 5 • Insertion Loss (RFC–RFX)(*) Note: * High frequency performance can be improved by external matching (see Figure 19–Figure 21). RF1 RF2 0 Insertion Loss (dB) -2 -4 -6 -8 -10 0 5 10 15 20 25 Frequency (GHz) DOC-12014-10 – (04/2022) Page 9 of 23 www.psemi.com PE42522 UltraCMOS® SPDT RF Switch Figure 6 • Insertion Loss vs Temperature (RFC–RFX)(*) Note: * High frequency performance can be improved by external matching (see Figure 19–Figure 21). -40 °C +25 °C +85 °C 0 Insertion Loss (dB) -2 -4 -6 -8 -10 0 5 10 15 20 25 Frequency (GHz) Figure 7 • Insertion Loss vs VDD (RFC–RFX)(*) Note: * High frequency performance can be improved by external matching (see Figure 19–Figure 21). 2.3 V 3.3 V 5.5 V 0 Insertion Loss (dB) -2 -4 -6 -8 -10 0 5 10 15 20 25 Frequency (GHz) Page 10 of 23 DOC-12014-10 – (04/2022) www.psemi.com PE42522 UltraCMOS® SPDT RF Switch Figure 8 • RFC Port Return Loss vs Temperature(*) Note: * High frequency performance can be improved by external matching (see Figure 19–Figure 21). –40°C +25°C +85°C 0 Return Loss (dB) −5 −10 −15 −20 −25 −30 −35 −40 0 5 10 15 20 25 26. 5 25 26. 5 Frequency (GHz) Figure 9 • RFC Port Return Loss vs VDD(*) Note: * High frequency performance can be improved by external matching (see Figure 19–Figure 21). 2.3V 3.3V 5.5V 0 Return Loss (dB) −5 −10 −15 −20 −25 −30 −35 −40 0 5 10 15 20 Frequency (GHz) DOC-12014-10 – (04/2022) Page 11 of 23 www.psemi.com PE42522 UltraCMOS® SPDT RF Switch Figure 10 • Active Port Return Loss vs Temperature(*) Note: * High frequency performance can be improved by external matching (see Figure 19–Figure 21). –40°C +25°C +85°C 0 Return Loss (dB) −5 −10 −15 −20 −25 −30 −35 −40 0 5 10 15 20 25 26. 5 25 26. 5 Frequency (GHz) Figure 11 • Active Port Return Loss vs VDD(*) Note: * High frequency performance can be improved by external matching (see Figure 19–Figure 21). 2.3V 3.3V 5.5V 0 Return Loss (dB) −5 −10 −15 −20 −25 −30 −35 −40 0 5 10 15 20 Frequency (GHz) Page 12 of 23 DOC-12014-10 – (04/2022) www.psemi.com PE42522 UltraCMOS® SPDT RF Switch Figure 12 • Terminated Port Return Loss vs Temperature –40°C +25°C +85°C 0 Return Loss (dB) −5 −10 −15 −20 −25 −30 −35 −40 0 5 10 15 20 25 26. 5 20 25 26. 5 Frequency (GHz) Figure 13 • Terminated Port Return Loss vs VDD 2.3V 3.3V 5.5V 0 Return Loss (dB) −5 −10 −15 −20 −25 −30 −35 −40 0 5 10 15 Frequency (GHz) DOC-12014-10 – (04/2022) Page 13 of 23 www.psemi.com PE42522 UltraCMOS® SPDT RF Switch Figure 14 • Isolation vs Temperature (RFX–RFX) –40°C +25°C +85°C 0 −10 Isolation (dB) −20 −30 −40 −50 −60 −70 −80 −90 0 5 10 15 20 25 26. 5 20 25 26. 5 Frequency (GHz) Figure 15 • Isolation vs VDD (RFX–RFX) 2.3V 3.3V 5.5V 0 −10 Isolation (dB) −20 −30 −40 −50 −60 −70 −80 −90 0 5 10 15 Frequency (GHz) Page 14 of 23 DOC-12014-10 – (04/2022) www.psemi.com PE42522 UltraCMOS® SPDT RF Switch Figure 16 • Isolation vs Temperature (RFC–RFX) –40°C +25°C +85°C 0 −10 Isolation (dB) −20 −30 −40 −50 −60 −70 −80 −90 0 5 10 15 20 25 26. 5 20 25 26. 5 Frequency (GHz) Figure 17 • Isolation vs VDD (RFC–RFX) 2.3V 3.3V 5.5V 0 −10 Isolation (dB) −20 −30 −40 −50 −60 −70 −80 −90 0 5 10 15 Frequency (GHz) DOC-12014-10 – (04/2022) Page 15 of 23 www.psemi.com PE42522 UltraCMOS® SPDT RF Switch High Frequency Performance with External Matching High frequency insertion loss and return loss can be further improved by external tuning traces in the customer application board layout. Figure 18 is a sample matching network using ideal elements. Figure 19–Figure 21 show the simulated insertion loss and return loss improvement using the matching network. Figure 18 • PE42522 Matching Network L2 = 0.300 nH L1 = 0.285 nH L1 = 0.285 nH L2 = 0.300 nH SPDT PE42522 RF1 RF2 C1 = 175 fF C1 = 175 fF L1ANT = 0.225 nH C1ANT = 200 fF Matching can be realized with printed elements on the customer application board. L2ANT = 0.200 nH RFC Additional information on high frequency performance with external matching can be found in Application Note 41, PE42522/523–High Frequency Performance Improvement Through Narrowband Matching. Page 16 of 23 DOC-12014-10 – (04/2022) www.psemi.com PE42522 UltraCMOS® SPDT RF Switch Figure 19 • Insertion Loss (RFC–RFX) With or Without Matching(*) Note: * For reference only. Matched Simulated Data Un-matched Measured Data 0 Insertion Loss (dB) -2 -4 -6 -8 -10 23 23.5 24 24.5 25 25.5 26 26.5 Frequency (GHz) Figure 20 • Active Port Return Loss With or Without Matching(*) Note: * For reference only. Matched Simulated Data Un-matched Measured Data 0 Return Loss (dB) -5 -10 -15 -20 -25 -30 23 23.5 24 24.5 25 25.5 26 26.5 Frequency (GHz) DOC-12014-10 – (04/2022) Page 17 of 23 www.psemi.com PE42522 UltraCMOS® SPDT RF Switch Figure 21 • RFC Port Return Loss With or Without Matching(*) Note: * For reference only. Matched Simulated Data Un-matched Measured Data 0 Return Loss (dB) -5 -10 -15 -20 -25 -30 23 23.5 24 24.5 25 25.5 26 26.5 Frequency (GHz) Page 18 of 23 DOC-12014-10 – (04/2022) www.psemi.com PE42522 UltraCMOS® SPDT RF Switch Evaluation Kit The SPDT switch evaluation board was designed to ease customer evaluation of pSemi's PE42522. The RF common port is connected through a 50Ω transmission line via the SMA connector, J1. RF1 and RF2 ports are connected through 50Ω transmission lines via SMA connectors J4 and J3 respectively. A 50Ω through transmission line is available via SMA connectors J6 and J7, which can be used to de-embed the loss of the PCB. J13 provides DC and digital inputs to the device. The board is constructed of a two metal layer material with a total thickness of 38 mils. The top RF layer is Rogers 4360 material with a thickness of 32 mils and the εr = 6.4. The bottom layer provides ground for the transmission lines. The transmission lines were designed using a coplanar waveguide with ground plane model using a trace width of 18 mils, trace gaps of 7 mils and metal thickness of 2.1 mils. For the true performance of the PE42522 to be realized, the PCB must be designed in such a way that RF transmission lines and sensitive DC I/O traces are well isolated from one another. High frequency insertion loss and return loss can be further improved by external tuning traces in the customer application board layout. For further details, see “High Frequency Performance with External Matching”. Please note that this is a generic PCB and is being used for multiple parts. Pin labeled V2 is GND. Figure 22 • Evaluation Kit Layout for PE42522 DOC-12014-10 – (04/2022) Page 19 of 23 www.psemi.com PE42522 UltraCMOS® SPDT RF Switch Pin Information This section provides pinout information for the PE42522. Figure 23 shows the pin map of this device for the available package. Table 5 provides a description for each pin. GND GND GND VDD 27 26 25 24 RF2 V1 1 28 GND VSS_EXT Pin 1 Dot Marking 29 Figure 23 • Pin Configuration (Top View) Table 5 • Pin Descriptions for PE42522 Pin No. Pin Name 1, 3–11, 13–21, 23, 25–27 GND 2 RF2(1) RF port 2 12 RFC(1) RF common 22 RF1(1) RF port 1 23 GND 2 22 RF1 GND 3 21 GND 24 VDD GND 4 20 GND 28 V1 GND 5 19 GND 29 GND 6 18 GND GND 7 17 GND GND 8 16 GND 9 10 11 12 13 14 15 GND GND GND RFC GND GND GND Exposed Ground Pads Pad Description Ground Supply voltage (nominal 3.3V) Digital control logic input 1 VSS_EXT(2) External VSS negative voltage control GND Exposed pad: ground for proper operation Notes: 1) RF pins 2, 12 and 22 must be at 0 VDC. The RF pins do not require DC blocking capacitors for proper operation if the 0 VDC requirement is met. 2) Use VSS_EXT (pin 29) to bypass and disable internal negative voltage generator. Connect VSS_EXT (pin 29) to GND (VSS_EXT = 0V) to enable internal negative voltage generator. Use VSS_EXT (pin 29) to bypass and disable internal negative voltage generator. Connect VSS_EXT (pin 29) to GND (VSS_EXT = 0V) to enable internal negative voltage generator. Page 20 of 23 DOC-12014-10 – (04/2022) www.psemi.com PE42522 UltraCMOS® SPDT RF Switch Packaging Information This section provides packaging data including the moisture sensitivity level, package drawing, package marking and tape-and-reel information. Moisture Sensitivity Level The moisture sensitivity level rating for the PE42522 in the 29-lead 4 × 4 mm LGA package is MSL3. Package Drawing Top-Marking Specification Figure 24 • Package Mechanical Drawing for 29-lead 4 × 4 × 0.91 mm LGA A PIN #1 CORNER 4.00 (2X) B 0.26x0.30 (x6) 0.20 x45° Chamfer 0.40 0.33x0.34 (x18) 0.47 0.30x0.30 (x5) 0.43 0.45 0.45 4.00 1.13 (x4) 0.24 (x4) 1.13 (x4) 3.80 0.45 0.24 (x4) 1.13 0.47 1.13 0.43 0.46 0.10 (x29) (2X) 0.49 0.45 0.24 (x4) 3.80 0.47 TOP VIEW 0.70±0.05 0.47 0.24 (x4) BOTTOM VIEW RECOMMENDED LAND PATTERN Note: - Dimensions concerning pad pitch are mirrored across the Y-axis. Note: - Only metal is shown on recommended land pattern. - Please contact your PCB board supplier for specifications on solder mask opening sizes and tolerances. 0.91±0.10 SEATING PLANE SIDE VIEW C Third Angle Projection Unless otherwise specified dimensions are in millimeters DECIMAL ANGULAR X.X ± 0.1 ± 1° X.XX ± 0.05 X.XXX ± 0.030 Interpret dimensions and tolerance per ASME Y14.5 – 1994 DOC-12014-10 – (04/2022) DOC-88477-1 DOC-88477-1 Page 21 of 23 www.psemi.com PE42522 UltraCMOS® SPDT RF Switch Figure 25 • Package Marking Specifications for PE42522 42522 YYWW ZZZZZZ = YY = WW = ZZZZZZ = Pin 1 indicator Last two digits of assembly year Assembly work week Assembly lot code (maximum six characters) Tape and Reel Specification Figure 26 • Tape and Reel Specifications for 29-lead 4 × 4 × 0.91 mm LGA Direction of Feed Pin 1 (I) Measured from centerline of sprocket hole to centerline of pocket. (II) Cumulative tolerance of 10 sprocket holes is ± 0.20. (III) Measured from centerline of sprocket hole to centerline of pocket. Device Orientation in Tape Notes: Not drawn to scale. All dimensions are in millimeters unless otherwise stated. Maximum cavity angle 5 degrees. Page 22 of 23 DOC-12014-10 – (04/2022) www.psemi.com PE42522 UltraCMOS® SPDT RF Switch Ordering Information Table 6 lists the available ordering codes for the PE42522 as well as available shipping methods. Table 6 • Order Codes for PE42522 Order Codes Description Packaging Shipping Method PE42522C-X PE42522 SPDT RF switch 29-lead 4 × 4 mm LGA 500 units / T&R PE42522C-Z PE42522 SPDT RF switch 29-lead 4 × 4 mm LGA 3000 units / T&R EK42522-04 PE42522 Evaluation kit Evaluation kit 1 / box Document Categories Advance Information The product is in a formative or design stage. The datasheet contains design target specifications for product development. Specifications and features may change in any manner without notice. Preliminary Specification The datasheet contains preliminary data. Additional data may be added at a later date. pSemi reserves the right to change specifications at any time without notice in order to supply the best possible product. Product Specification The datasheet contains final data. In the event pSemi decides to change the specifications, pSemi will notify customers of the intended changes by issuing a CNF (Customer Notification Form). Product Brief This document contains a shortened version of the datasheet. For the full datasheet, contact sales@psemi.com. Sales Contact For additional information, contact Sales at sales@psemi.com. Disclaimers The information in this document is believed to be reliable. However, pSemi assumes no liability for the use of this information. Use shall be entirely at the user’s own risk. No patent rights or licenses to any circuits described in this document are implied or granted to any third party. pSemi’s products are not designed or intended for use in devices or systems intended for surgical implant, or in other applications intended to support or sustain life, or in any application in which the failure of the pSemi product could create a situation in which personal injury or death might occur. pSemi assumes no liability for damages, including consequential or incidental damages, arising out of the use of its products in such applications. Patent Statement pSemi products are protected under one or more of the following U.S. patents: patents.psemi.com Copyright and Trademark ©2014–2022, pSemi Corporation. All rights reserved. The Peregrine Semiconductor name, Peregrine Semiconductor logo and UltraCMOS are registered trademarks and the pSemi name, pSemi logo, HaRP and DuNE are trademarks of pSemi Corporation in the U.S. and other countries. Product Specification www.psemi.com DOC-12014-10 – (04/2022)