Product Specification
PE43205
UltraCMOS® RF Digital Attenuator
2-bit, 18 dB, 35–6000 MHz
Product Description
The PE43205 is a 50Ω, HaRP™ technology-enhanced
fast switching 2-bit RF Digital Step Attenuator (DSA)
designed for use in 3G/4G wireless infrastructure and
other high performance RF applications.
This DSA is a pin-compatible upgraded version of the
PE43204 with a wider frequency and power supply range,
and extended operating temperature range.
Covering an 18 dB attenuation range in 6 dB and 12 dB
steps, it maintains high RF performance and low power
consumption from 35 MHz through 6 GHz. PE43205 is
offered in a 12-lead 3x3 mm QFN package. In addition,
no external blocking capacitors are required if 0 VDC is
present on the RF ports.
The PE43205 is manufactured on pSemi’s UltraCMOS®
process, a patented variation of silicon-on-insulator (SOI)
technology on a sapphire substrate.
Features
Attenuation: 6 dB / 12 dB steps to 18 dB
Fast switching time of 29 ns
Low attenuation error
0.10 dB @ 2 GHz
0.15 dB @ 3 GHz
High linearity
+61 dBm IIP3 @ 1950 MHz
Wide supply range of 2.3V to 5.5V
1.8V control logic compatible
105°C operating temperature
ESD performance
2 kV HBM on all pins
100V MM on all pins
1 kV CDM on all pins
Parallel control
pSemi’s HaRP™ technology enhancements deliver
high linearity and excellent harmonics performance. It is
an innovative feature of the UltraCMOS process, offering
the performance of GaAs with the economy and
integration of conventional CMOS.
Figure 1. Functional Diagram
Figure 2. Package Type
12-lead 3x3 mm QFN
Switched Attenuator Array
RF Input
Parallel Control
RF Output
2
Control Logic
Interface
DOC-01281
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Page 1 of 11
PE43205
Product Specification
Table 1. Electrical Specifications @ +25°C, VDD = 2.3V to 5.5V
Parameter
Condition
Frequency range
Min
Typ
35
Max
Unit
6000
MHz
Attenuation range
6 dB and 12 dB steps
0–18
Insertion loss
35 MHz–2 GHz
2–3 GHz
3–4 GHz
4–5 GHz
5–6 GHz
0.50
0.60
0.70
0.85
1.05
0.60
0.70
0.80
1.10
1.30
dB
dB
dB
dB
dB
Attenuation error
0 dB–18 dB attenuation settings
35 MHz–2 GHz
>2–3 GHz
>3–4 GHz
>4–5 GHz
>5–6 GHz
0.10
0.15
0.45
0.55
0.75
0.40
0.50
1.05
1.25
1.55
dB
dB
dB
dB
dB
Return loss
35 MHz–2 GHz
2–3 GHz
3–4 GHz
4–5 GHz
5–6 GHz
17
14
11
10
9
dB
dB
dB
dB
dB
Relative phase
All states
35 MHz–2 GHz
2–3 GHz
3–4 GHz
4–5 GHz
5–6 GHz
9
12
17
22
24
deg
deg
deg
deg
deg
Input 0.1dB compression point *
200 MHz–6 GHz
30
dBm
IIP3
1950 MHz
61
dBm
Switching time
50% DC CTRL to 90% or 10% RF
29
ns
–0.45
–0.45
–0.15
–0.15
–0.30
dB
Note: * Input 0.1 dB compression point is a linearity figure of merit. Refer to Table 3 for operating RF input power (50Ω).
©2017, 2019 pSemi Corp. All rights reserved.
Page 2 of 11
Document No. DOC-85387-2
│ UltraCMOS® RFIC Solutions
PE43205
Product Specification
Table 1A. Electrical Specifications @ +105°C, VDD = 2.3V to 5.5V
Parameter
Condition
Frequency range
Min
Typ
35
Max
Unit
6000
MHz
Attenuation range
6 dB and 12 dB steps
0–18
Insertion loss
35 MHz–2 GHz
2–3 GHz
3–4 GHz
4–5 GHz
5–6 GHz
0.60
0.65
0.80
0.95
1.15
0.70
0.80
0.90
1.20
1.45
dB
dB
dB
dB
dB
Attenuation error
0 dB–18 dB attenuation settings
35 MHz–2 GHz
>2–3 GHz
>3–4 GHz
>4–5 GHz
>5–6 GHz
–0.03
–0.10
–0.15
0.25
0.40
0.25
0.30
0.65
0.85
1.15
dB
dB
dB
dB
dB
Return loss
35 MHz–2 GHz
2–3 GHz
3–4 GHz
4–5 GHz
5–6 GHz
18
15
11
10
9.5
dB
dB
dB
dB
dB
Relative phase
All states
35 MHz–2 GHz
2–3 GHz
3–4 GHz
4–5 GHz
5–6 GHz
9
13
17
23
25
deg
deg
deg
deg
deg
Input 0.1dB compression point *
200 MHz–6 GHz
30
dBm
IIP3
1950 MHz
63
dBm
Switching time
50% DC CTRL to 90% or 10% RF
31
ns
–0.35
–0.45
–0.45
–0.35
–0.45
dB
Note: * Input 0.1 dB compression point is a linearity figure of merit. Refer to Table 3 for operating RF input power (50Ω).
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Page 3 of 11
PE43205
Product Specification
RF1
2
NC
3
C2
11
10
9
Exposed
Pad
8
7
NC
4
5
Table 3. Operating Ranges
Symbol
Min
Supply voltage
VDD
2.3
Supply current
IDD
Digital input high
VIH
Digital Input Low
VIL
Parameter
GND
RF2
NC
6
NC
1
12
NC
GND
C1
Pin 1 dot
marking
VDD
Figure 3. Pin Configuration (Top View)
Max
Unit
5.5
V
200
μA
1.17
3.6
V
–0.3
0.6
V
Digital input leakage
10
μA
RF input power, CW
35 MHz–4 GHz
>4 GHz–6 GHz
PMAX,CW
See
Fig. 4
+24
dBm
dBm
PMAX,PULSED
See
Fig. 4
+27
dBm
dBm
+105
°C
RF input power, pulsed *
35 MHz–4 GHz
>4 GHz–6 GHz
Operating temperature
range
–40
+25
Description
Table 4. Absolute Maximum Ratings
Pin #
Pin Name
1
GND
2
2
RF1
RF1 port
Supply voltage
3
NC1
No connect
4
NC1
No connect
5
NC1
No connect
6
NC1
No connect
7
NC1
Ground
Parameter/Condition
Symbol
Min
Max
Unit
VDD
–0.3
5.5
V
Voltage on any digital input
VI
–0.3
3.6
V
Storage temperature range
TST
–65
+150
°C
Maximum input power
PMAX,ABS
+27.5
dBm
No connect
ESD voltage HBM1, on all pins
VESD,HBM
2000
V
ESD voltage MM2, on all pins
VESD,MM
100
V
ESD voltage CDM3, on all pins
VESD,CDM
1000
V
8
RF2
RF2 port
9
GND
Ground
10
C2
Attenuation control bit, 12 dB
11
C1
Attenuation control bit, 6 dB
12
VDD
Supply voltage (nominal 3.3V)
Notes: 1. Pins 3 through 7 may be tied to ground if desired, but they
are not connected to ground internal to the package.
2. RF pins 2 and 8 must be at 0 VDC. The RF pins do not
require DC blocking capacitors for proper operation if the
0 VDC requirement is met.
©2017, 2019 pSemi Corp. All rights reserved.
Page 4 of 11
130
Note: * Pulsed, 5% duty cycle of 4620 µs period, 50Ω
Table 2. Pin Descriptions
2
TOP
Typ
Notes: 1. Human Body Model (MIL-STD 883 Method 3015.7)
2. Machine Model (JEDEC JESD22-A115)
3. Charged Device Model (JEDEC JESD22-C101)
Exceeding absolute maximum ratings may cause
permanent damage. Operation should be
restricted to the limits in the Operating Ranges
table. Operation between operating range
maximum and absolute maximum for extended
periods may reduce reliability.
Document No. DOC-85387-2
│ UltraCMOS® RFIC Solutions
PE43205
Product Specification
Electrostatic Discharge (ESD) Precautions
When handling this UltraCMOS device, observe
the same precautions that you would use with
other ESD-sensitive devices. Although this device
contains circuitry to protect it from damage due to
ESD, precautions should be taken to avoid
exceeding the specified rating.
Latch-Up Avoidance
Unlike conventional CMOS devices, UltraCMOS
devices are immune to latch-up.
Switching Frequency
The PE43205 has a maximum 25 kHz switching
rate. Switching rate is defined to be the speed at
which the DSA can be toggled across attenuation
states. Switching time is the time duration
between the point the control signal reaches 50%
of the final value and the point the output signal
reaches within 10% or 90% of its target value.
Table 5. Attenuation Word Truth Table
C1
C2
Attenuation Setting RF1–RF2
L
L
Reference I.L.
H
L
6 dB
L
H
12 dB
H
H
18 dB
Moisture Sensitivity Level
The Moisture Sensitivity Level rating for the
PE43205 in the 12-lead 3x3 mm QFN package is
MSL1.
Exposed Solder Pad Connection
The exposed solder pad on the bottom of the
package must be grounded for proper device
operation.
Spurious Performance
The typical low-frequency spurious performance
of the PE43205 is –135 dBm.
Figure 4. Power De-Rating Curve for 35 MHz–4 GHz
29.0
27.0
Input Power (dBm)
25.0
23.0
Maximum Input Power
21.0
RF Input Power, Pulsed @ 25C Ambient
19.0
RF Input Power, Pulsed @ 105C Ambient
RF Input Power, CW @ 25C Ambient
17.0
RF Input Power, CW @ 105C Ambient
15.0
35
350
Frequency (MHz)
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Page 5 of 11
PE43205
Product Specification
Typical Performance Data @ +25°C and VDD = 3.3V, unless otherwise specified
Figure 5. Attenuation vs. Attenuation Setting
1GHz
2 GHz
3 GHz
4 GHz
5 GHz
Figure 6. Attenuation Error vs. Frequency
6dB
6 GHz
20
0.8
18
0.7
12dB
18dB
16
0.6
Attenuation Error (dB)
Attenuation (dB)
14
12
10
8
6
0.5
0.4
0.3
0.2
4
0.1
2
0
0
0
6
12
18
Attenuation State (dB)
0
1
2
3
Frequency (GHz)
4
5
6
Figure 7. Insertion Loss vs. Temperature
Figure 8. Input Return Loss vs.
Attenuation State
Figure 9. Output Return Loss vs.
Attenuation State
Figure 10. Input Return Loss vs. Temperature
@ 12 dB State
©2017, 2019 pSemi Corp. All rights reserved.
Page 6 of 11
Document No. DOC-85387-2
│ UltraCMOS® RFIC Solutions
PE43205
Product Specification
Typical Performance Data @ 25°C and VDD = 3.3V, unless otherwise specified
Figure 11. Output Return Loss vs. Temperature
@ 12 dB State
Figure 12. Relative Phase vs. Frequency
6dB
12dB
18dB
30
Phase Error (Deg)
25
20
15
10
5
0
0
1
2
3
Frequency (GHz)
4
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5
6
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Page 7 of 11
PE43205
Product Specification
Evaluation Kit
Figure 13. Evaluation Board Layout
The 2-bit DSA evaluation kit board was designed
to ease customer evaluation of pSemi’s
PE43205.
To evaluate the PE43205, apply 3.3V to the VDD
header pin and Ground to the GND header pin.
The DUT can be controlled two ways:
1. The mechanical switches in conjunction with the
VCTL pin can be used. Apply desired control
voltage to VCTL header pin. The top
mechanical switch controls the 6 dB stage, the
bottom mechanical switch controls the 12 dB
stage. For each switch, the left position is the
0V condition, while the right position is the VCTRL
condition. The middle position leaves the control
pin floating.
2. The CTL1 and CTL2 pins on the header can be
used. Each pin directly controls the 6 dB and
12 dB stage respectively. The VCTL pin on the
header is left open. The mechanical switches
may be left uninstalled or must be kept in the
middle position.
Note: To accurately measure the fast switching
performance of the PE43205, C3 and C4 should
be removed.
PRT-53374
Power-up Control Settings
The PE43205 will always power up into the state
determined by the voltages on the two control pins.
The DSA can be preset to any state within the
18 dB range by pre-setting the parallel control pins
prior to power-up. There is a 10 μs delay between
the time the DSA is powered-up to the time the
desired state is set. If the control pins are left
floating during power-up, the device will default to
the minimum attenuation setting (insertion loss
state).
©2017, 2019 pSemi Corp. All rights reserved.
Page 8 of 11
Document No. DOC-85387-2
│ UltraCMOS® RFIC Solutions
PE43205
Product Specification
Figure 14. Evaluation Board Schematic
Notes: 1. Use PCB part number PRT-53374.
2. CAUTION: Contains parts and assemblies susceptible to damage by electrostatic discharge (ESD).
Document No. DOC-85387-2 │ www.psemi.com
DOC-30927
©2017, 2019 pSemi Corp. All rights reserved.
Page 9 of 11
PE43205
Product Specification
Figure 15. Package Drawing
12-lead 3x3 mm QFN
0.10 C
3.00
A
(2X)
B
9
7
0.50
(x8)
0.75
(x12)
10
6
1.15±0.05
3.00
1.20
3.40
12
4
0.23±0.05
(X12)
0.50
0.28
(x12)
1.15±0.05
0.55±0.05
(x12)
3
0.10 C
(2X)
1
1.00
REF
Pin #1 Corner
1.28
Pin #1 Identifier
3.40
TOP VIEW
BOTTOM VIEW
RECOMMENDED LAND PATTERN
DOC-01924
0.10 C
0.10
0.05
0.75±0.05
0.05 C
C A B
C
ALL FEATURES
SEATING PLANE
0.203
0.05
C
SIDE VIEW
Note: Pin 1 identification tab is electrically connected to the exposed ground paddle.
Figure 16. Top Marking Specifications
= Pin 1 designator
43205
YYWW
ZZZZZZ
43205 = Five digit part number
YYWW = Date Code, last two digits of the year and work week
ZZZZZZ = Maximum six characters of the assembly lot code
DOC-51207
©2017, 2019 pSemi Corp. All rights reserved.
Page 10 of 11
Document No. DOC-85387-2
│ UltraCMOS® RFIC Solutions
PE43205
Product Specification
Figure 7. Tape and Reel Drawing
Tape Feed Direction
Pin 1
Top of
Device
Device Orientation in Tape
Table 6. Ordering Information
Ordering Code
Description
Package
Shipping Method
PE43205B-Z
PE43205 Digital step attenuator
Green 12-lead 3x3 mm QFN
3000 units/T&R
EK43205-2
PE43205 Evaluation kit
Evaluation kit
1/Box
Sales Contact and Information
For sales and contact information please visit www.psemi.com.
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©2017, 2019 pSemi Corp. All rights reserved.
Page 11 of 11