PE42553B-Z

PE42553 Document Category: Product Specification UltraCMOS® SPDT RF Switch, 9 kHz–8 GHz Features Applications • Excellent power handling: 36 dBm CW and 38 dBm pulsed power in 50Ω @ 8 GHz • Test and measurement ▪ Signal sources • High linearity: IIP3 of 66 dBm ▪ Communication testers • High isolation ▪ Spectrum analyzers ▪ 45 dB @ 3 GHz ▪ Network analyzers ▪ 41 dB @ 8 GHz • Automated test equipment • HaRP™ technology enhanced • General purpose TX/RX switch ▪ Fast settling time Figure 1 • PE42553 Functional Diagram ▪ No gate and phase lag ▪ No drift in insertion loss and phase RFC • High ESD performance ▪ 2.5 kV HBM on all pins, 4 kV HBM on RF pins to GND ▪ 1 kV CDM on all pins • Packaging – 16-lead 3 × 3 mm QFN RF1 RF2 50Ω 50Ω CMOS Control Driver and ESD LS CTRL VSS_EXT Product Description The PE42553 is a HaRPTM technology-enhanced absorptive SPDT RF switch that supports a broad frequency range from 9 kHz to 8 GHz. This general purpose switch maintains excellent linearity, high RF performance and fast settling time making this device ideal for test and measurement (T&M), automated test equipment (ATE) and other high performance wireless applications. The PE42553 is a pin-compatible version of the PE42552 with improved power handling capability of 36 dBm continuous wave (CW) and 38 dBm pulsed power in 50Ω at 8 GHz. No blocking capacitors are required if DC voltage is not present on the RF ports. The PE42553 is manufactured on pSemi’s UltraCMOS® process, a patented variation of silicon-on-insulator (SOI) technology on a sapphire substrate. ©2016–2020 pSemi Corporation. All rights reserved. • Headquarters: 9369 Carroll Park Drive, San Diego, CA, 92121 Product Specification DOC-76991-3 – (06/2020) www.psemi.com PE42553 SPDT RF Switch pSemi’s HaRP technology enhancements deliver high linearity and excellent harmonics performance. It is an innovative feature of the UltraCMOS process, offering the performance of GaAs with the economy and integration of conventional CMOS. Optional External VSS For proper operation, the VSS_EXT pin must be grounded or tied to the VSS voltage specified in Table 2. When the VSS_EXT pin is grounded, FETs in the switch are biased with an internal negative voltage generator. For applications that require the lowest possible spur performance, VSS_EXT can be applied externally to bypass the internal negative voltage generator. Absolute Maximum Ratings Exceeding absolute maximum ratings listed in Table 1 may cause permanent damage. Operation should be restricted to the limits in Table 2. Operation between operating range maximum and absolute maximum for extended periods may reduce reliability. ESD Precautions When handling this UltraCMOS device, observe the same precautions as with any other ESD-sensitive devices. Although this device contains circuitry to protect it from damage due to ESD, precautions should be taken to avoid exceeding the rating specified in Table 1. Latch-up Immunity Unlike conventional CMOS devices, UltraCMOS devices are immune to latch-up. Table 1 • Absolute Maximum Ratings for PE42553 Parameter/Condition Min Max Unit Supply voltage, VDD –0.3 5.5 V Digital input voltage, CTRL –0.3 3.6 V LS input voltage –0.3 3.6 V RF input power, CW (RFC–RFX)(1) 9 kHz–10 MHz >10 MHz–8 GHz Fig. 2, Fig. 3 37 dBm dBm RF input power, pulsed (RFC–RFX)(2) 9 kHz–10 MHz >10 MHz–8 GHz Fig. 2, Fig. 3 Fig. 4, Fig. 5 dBm dBm RF input power into terminated ports, CW (RFX)(1) 9–800 kHz >800 kHz–8 GHz Fig. 2, Fig. 3 28 dBm dBm +150 °C +150 °C Maximum junction temperature Storage temperature range –65 Page 2 of 20 DOC-76991-3 – (06/2020) www.psemi.com PE42553 SPDT RF Switch Table 1 • Absolute Maximum Ratings for PE42553 Parameter/Condition Min Max Unit ESD voltage HBM(3) RF pins to GND All pins 4000 2500 V V ESD voltage MM, all pins(4) 200 V ESD voltage CDM, all pins(5) 1000 V Notes: 1) 100% duty cycle, all bands, 50Ω. 2) Pulsed, 5% duty cycle of 4620 µs period, 50Ω. 3) Human body model (MIL-STD 883 Method 3015). 4) Machine model (JEDEC JESD22-A115). 5) Charged device model (JEDEC JESD22-C101). DOC-76991-3 – (06/2020) Page 3 of 20 www.psemi.com PE42553 SPDT RF Switch Recommended Operating Conditions Table 2 list the recommending operating condition for PE42553. Devices should not be operated outside the recommended operating conditions listed below. Table 2 • Recommended Operating Condition for PE42553 Parameter Min Typ Max Unit 5.5 V 120 200 µA 3.4 5.5 V 50 80 µA –2.6 V Normal mode (VSS_EXT = 0V)(1) Supply voltage, VDD 2.3 Supply current, IDD Bypass mode (VSS_EXT = –3.4V, VDD ≥ 3.4V for full spec. compliance)(2) Supply voltage, VDD 2.6 Supply current, IDD Negative supply voltage, VSS_EXT –3.6 Negative supply current, ISS –40 –16 µA Normal or Bypass mode Digital input high, CTRL 1.17 3.6 V Digital input low, CTRL –0.3 0.6 V 10 µA RF input power, CW (RFC–RFX)(3) 9 kHz–10 MHz >10 MHz–8 GHz Fig. 2, Fig. 3 36 dBm dBm RF input power, pulsed (RFC–RFX)(4) 9 kHz–10 MHz >10 MHz–8 GHz Fig. 2, Fig. 3 Fig. 4, Fig. 5 dBm dBm RF input power, hot switch, CW(3) 9–300 kHz >300 kHz–8 GHz Fig. 2, Fig. 3 20 dBm dBm RF input power into terminated ports, CW (RFX)(3) 9–600 kHz >600 kHz–8 GHz Fig. 2, Fig. 3 26 dBm dBm +85 °C Digital input current, ICTRL Operating temperature range –40 +25 Notes: 1) Normal mode: connect VSS_EXT (pin 13) to GND (VSS_EXT = 0V) to enable internal negative voltage generator. 2) Bypass mode: use VSS_EXT (pin 13) to bypass and disable internal negative voltage generator. 3) 100% duty cycle, all bands, 50Ω. 4) Pulsed, 5% duty cycle of 4620 µs period, 50Ω. Page 4 of 20 DOC-76991-3 – (06/2020) www.psemi.com PE42553 SPDT RF Switch Electrical Specifications Table 3 provides the PE42553 key electrical specifications at 25 °C (ZS = ZL = 50Ω), unless otherwise specified. Normal mode(1) is at VDD = 3.3V and VSS_EXT = 0V. Bypass mode(2) is at VDD = 3.4V and VSS_EXT = –3.4V. Table 3 • PE42553 Electrical Specifications Parameter Path Condition Operating frequency Min Typ 9 kHz Max Unit 8 GHz As shown 0.80 1.00 1.05 dB dB dB RFC–RFX 9 kHz–10 MHz 10 MHz–3 GHz 3–8 GHz RFX–RFX 9 kHz–10 MHz 10 MHz–3 GHz 3–8 GHz 70 46 33 90 54 36 dB dB dB RFC–RFX 9 kHz–10 MHz 10 MHz–3 GHz 3–8 GHz 80 42 38 90 45 41 dB dB dB Return loss (active port) RFC–RFX 9 kHz–10 MHz 10 MHz–3 GHz 3–8 GHz 23 17 15 dB dB dB Return loss (RFC port) RFC–RFX 9 kHz–10 MHz 10 MHz–3 GHz 3–8 GHz 23 17 15 dB dB dB RFX 9 kHz–10 MHz 10 MHz–3 GHz 3–8 GHz 32 24 19 dB dB dB Input 0.1dB compression point(3) RFC–RFX 10 MHz–8 GHz Fig. 4 Fig. 5 dBm dBm Input IP2 RFC–RFX 834 MHz, 1950 MHz 120 dBm Input IP3 RFC–RFX 834 MHz, 1950 MHz and 2700 MHz 66 dBm Settling time 50% CTRL to 0.05 dB final value 15 20 µs Switching time 50% CTRL to 90% or 10% of RF 5.5 9.5 µs Insertion loss Isolation Return loss (terminated port) 0.60 0.80 0.85 Notes: 1) Normal mode: connect VSS_EXT (pin 29) to GND (VSS_EXT = 0V) to enable internal negative voltage generator. 2) Bypass mode: use VSS_EXT (pin 29) to bypass and disable internal negative voltage generator. 3) The input 0.1dB compression point is a linearity figure of merit. Refer to Table 2 for the RF input power (50Ω). DOC-76991-3 – (06/2020) Page 5 of 20 www.psemi.com PE42553 SPDT RF Switch Switching Frequency Control Logic The PE42553 has a maximum 25 kHz switching rate in normal mode (pin 13 tied to ground). A faster switching rate is available in bypass mode (pin 13 tied to VSS_EXT). The rate at which the PE42553 can be switched is then limited to the switching time as specified in Table 3. Table 5 provides the control logic truth table for the PE42553. Table 5 • Truth Table for PE42553 Switching frequency describes the time duration between switching events. Switching time is the time duration between the point the control signal reached 50% of the final value and the point the output signal reaches within 10% or 90% of its target value. Spur-Free Performance The typical spurious performance of the PE42553 in normal mode is –152 dBm (pin 13 tied to ground). If spur-free performance is desired, the internal negative voltage generator can be disabled by applying a negative voltage to VSS_EXT (pin 13). LS CTRL RFC–RF1 RFC–RF2 0 0 OFF ON 0 1 ON OFF 1 0 ON OFF 1 1 OFF ON Logic Select The Logic Select feature is used to determine the definition for the CTRL pin. Thermal Data Psi-JT (JT), junction top-of-package, is a thermal metric to estimate junction temperature of a device on the customer application PCB (JEDEC JESD51-2). JT = (TJ – TT)/P where JT = junction-to-top of package characterization parameter, °C/W TJ = die junction temperature, °C TT = package temperature (top surface, in the center), °C P = power dissipated by device, Watts Table 4 • Thermal Data for PE42553 Parameter Typ Unit JT 41 °C/W JA, junction-to-ambient thermal resistance 93 °C/W Page 6 of 20 DOC-76991-3 – (06/2020) www.psemi.com PE42553 SPDT RF Switch Figure 2 • Power De-rating Curve for 9 kHz–10 MHz @ 25 °C Ambient (50Ω)(*) Note: * VSS_EXT = –VDD. 2.6 Vdd 2.8 Vdd 3.0 Vdd 3.2 Vdd 3.4 Vdd 40 35 Input Power (dBm) 30 25 20 15 10 5 0 1 10 100 1000 10000 Frequency (kHz) Figure 3 • Power De-rating Curve for 9 kHz–10 MHz @ 85 °C Ambient (50Ω)(*) Note: * VSS_EXT = –VDD. 2.6 VDD 2.8 VDD 3.0 VDD 3.2 VDD 3.4 VDD 40 35 Input Power (dBm) 30 25 20 15 10 5 0 1 10 100 1000 10000 Frequency (kHz) DOC-76991-3 – (06/2020) Page 7 of 20 www.psemi.com PE42553 SPDT RF Switch Figure 4 • Power De-rating Curve for 10 MHz–8 GHz @ 25 °C Ambient (50Ω)(*) Note: * Normal mode at 2.3V ≥ VDD ≥ 5.5V and VSS_EXT = 0V, Bypass mode at VDD = 3.4V and VSS_EXT = –3.4V. P0.1dB Compression / Abs. Max. RF Input Power, Pulsed @ 25°C Ambient Max. RF Input Power, Pulsed @ 25°C Ambient Max. RF Input Power, CW @ 25°C Ambient 41.5 41 Input Power (dBm) 40.5 40 39.5 39 38.5 38 37.5 37 36.5 36 35.5 35 34.5 0 1 2 3 4 5 6 7 8 Frequency (GHz) Figure 5 • Power De-rating Curve for 10 MHz–8 GHz @ 85 °C Ambient (50Ω)(*) Note: * Normal mode at 2.3V ≥ VDD ≥ 5.5V and VSS_EXT = 0V, Bypass mode at VDD = 3.4V and VSS_EXT = –3.4V. P0.1dB Compression / Abs. Max. RF Input Power, Pulsed @ 85°C Ambient Max. RF Input Power, Pulsed @ 85°C Ambient Max. RF Input Power, CW @ 85°C Ambient 41 40.5 Input Power (dBm) 40 39.5 39 38.5 38 37.5 37 36.5 36 35.5 35 34.5 0 1 2 3 4 5 6 7 8 Frequency (GHz) Page 8 of 20 DOC-76991-3 – (06/2020) www.psemi.com PE42553 SPDT RF Switch Typical Performance Data Figure 6–Figure 17 show the typical performance data @ 25 °C and VDD = 3.4V (ZS = ZL = 50Ω), unless otherwise specified. Figure 6 • Insertion Loss vs Temperature (RFC–RFX) −40°C +25°C +85°C 0 −0.5 Insertion Loss (dB) −1 −1.5 −2 −2.5 −3 −3.5 −4 −4.5 −5 0 1 2 3 4 5 6 7 8 Frequency (GHz) DOC-76991-3 – (06/2020) Page 9 of 20 www.psemi.com PE42553 SPDT RF Switch Figure 7 • Insertion Loss vs VDD (RFC–RFX) 2.3V 3.4V 5.5V 0 −0.5 Insertion Loss (dB) −1 −1.5 −2 −2.5 −3 −3.5 −4 −4.5 −5 0 1 2 3 4 5 6 7 8 6 7 8 Frequency (GHz) Figure 8 • RFC Port Return Loss vs Temperature −40°C +25°C +85°C 0 −5 Return Loss (dB) −10 −15 −20 −25 −30 −35 −40 −45 −50 0 1 2 3 4 5 Frequency (GHz) Page 10 of 20 DOC-76991-3 – (06/2020) www.psemi.com PE42553 SPDT RF Switch Figure 9 • RFC Port Return Loss vs VDD 2.3V 3.4V 5.5V 0 −5 Return Loss (dB) −10 −15 −20 −25 −30 −35 −40 −45 −50 0 1 2 3 4 5 6 7 8 Frequency (GHz) Figure 10 • Active Port Return Loss vs Temperature −40°C +25°C +85°C 0 −5 Return Loss (dB) −10 −15 −20 −25 −30 −35 −40 −45 −50 0 1 2 3 4 5 6 7 8 Frequency (GHz) DOC-76991-3 – (06/2020) Page 11 of 20 www.psemi.com PE42553 SPDT RF Switch Figure 11 • Active Port Return Loss vs VDD 2.3V 3.4V 5.5V 0 −5 Return Loss (dB) −10 −15 −20 −25 −30 −35 −40 −45 −50 0 1 2 3 4 5 6 7 8 Frequency (GHz) Figure 12 • Terminated Port Return Loss vs Temperature − 40C +25C +85C 0 −5 Return Loss (dB) −10 −15 −20 −25 −30 −35 −40 −45 −50 0 1 2 3 4 5 6 7 8 Frequency (GHz) Page 12 of 20 DOC-76991-3 – (06/2020) www.psemi.com PE42553 SPDT RF Switch Figure 13 • Terminated Port Return Loss vs VDD 2.3V 3.4V 5.5V 0 −5 Return Loss (dB) −10 −15 −20 −25 −30 −35 −40 −45 −50 0 1 2 3 4 5 6 7 8 6 7 8 Frequency (GHz) Figure 14 • Isolation vs Temperature (RFX–RFX) −40°C +25°C +85°C 0 −10 Isolation (dB) −20 −30 −40 −50 −60 −70 −80 −90 −100 0 1 2 3 4 5 Frequency (GHz) DOC-76991-3 – (06/2020) Page 13 of 20 www.psemi.com PE42553 SPDT RF Switch Figure 15 • Isolation vs VDD (RFX–RFX) 2.3V 3.4V 5.5V 0 −10 Isolation (dB) −20 −30 −40 −50 −60 −70 −80 −90 −100 0 1 2 3 4 5 6 7 8 Frequency (GHz) Figure 16 • Isolation vs Temperature (RFC–RFX) −40°C +25°C +85°C 0 −10 Isolation (dB) −20 −30 −40 −50 −60 −70 −80 −90 −100 0 1 2 3 4 5 6 7 8 Frequency (GHz) Page 14 of 20 DOC-76991-3 – (06/2020) www.psemi.com PE42553 SPDT RF Switch Figure 17 • Isolation vs VDD (RFC–RFX) 2.3V 3.4V 5.5V 0 −10 Isolation (dB) −20 −30 −40 −50 −60 −70 −80 −90 −100 0 1 2 3 4 5 6 7 8 Frequency (GHz) DOC-76991-3 – (06/2020) Page 15 of 20 www.psemi.com PE42553 SPDT RF Switch Evaluation Kit The SPDT switch evaluation board was designed to ease customer evaluation of pSemi’s PE42553. The RF common port is connected through a 50Ω transmission line via the SMA connector, J1. RF1 and RF2 ports are connected through 50Ω transmission lines via SMA connectors J2 and J3, respectively. A 50Ω through transmission line is available via SMA connectors J5 and J6, which can be used to de-embed the loss of the PCB. J4 provides DC and digital inputs to the device. For the true performance of the PE42553 to be realized, the PCB must be designed in such a way that RF transmission lines and sensitive DC I/O traces are well isolated from one another. Figure 18 • Evaluation Kit Layout for PE42553 Page 16 of 20 DOC-76991-3 – (06/2020) www.psemi.com PE42553 SPDT RF Switch Pin Information Table 6 • Pin Descriptions for PE42553 Pin No. Pin Name 1, 3–6, 8–10, 12 GND 2 RF1(1) RF port 1 VSS_EXT 7 RFC(1) RF common 11 RF2(1) RF port 2 13 This section provides pinout information for the PE42553. Figure 19 shows the pin map of this device for the available package. Table 6 provides a description for each pin. 13 GND CTRL 14 15 16 VDD Pin 1 Dot Marking LS Figure 19 • Pin Configuration (Top View) 1 12 RF2 3 10 GND 4 9 GND 2 GND GND Exposed Ground Pad Ground VSS_EXT(2) External VSS negative voltage control 14 CTRL 15 LS Logic Select: used to determine the definition for the CTRL pin (see Table 5) 16 VDD Supply voltage Pad GND Exposed pad: ground for proper operation GND 11 RF1 Description Digital control logic input 5 6 7 8 GND GND RFC GND Notes: 1) RF pins 2, 7 and 11 must be at 0 VDC. The RF pins do not require DC blocking capacitors for proper operation if the 0 VDC requirement is met. 2) Use VSS_EXT (pin 13) to bypass and disable internal negative voltage generator. Connect VSS_EXT (pin 13) to GND (VSS_EXT = 0V) to enable internal negative voltage generator. DOC-76991-3 – (06/2020) Page 17 of 20 www.psemi.com PE42553 SPDT RF Switch Packaging Information This section provides packaging data including the moisture sensitivity level, package drawing, package marking and tape-and-reel information. Moisture Sensitivity Level The moisture sensitivity level rating for the PE42553 in the 16-lead 3 × 3 mm QFN package is MSL3. Package Drawing Figure 20 • Package Mechanical Drawing for 16-lead 3 × 3 × 0.85 mm QFN 3.00 A 0.10 C (2X) 0.30 (X16) 1.70±0.05 B 9 12 0.50 0.750 (X16) 13 8 (X12) 1.70±0.05 3.00 4 0.10 C (2X) 1.75 3.75 16 5 0.25±0.05 (X16) 0.50 (X12) 1 1.50 0.30±0.05 (X16) 1.75 Pin #1 Corner 3.75 TOP VIEW BOTTOM VIEW RECOMMENDED LAND PATTERN 0.10 C 0.10 0.05 0.85±0.05 0.05 C C A B C ALL FEATURES SEATING PLANE 0.203 0.05 C SIDE VIEW Top-Marking Specification Figure 21 • Package Marking Specifications for PE42553 42553 YYWW ZZZZZZ = YY = WW = ZZZZZZ = Pin 1 indicator Last two digits of assembly year Assembly work week Assembly lot code (maximum six characters) Page 18 of 20 DOC-76991-3 – (06/2020) www.psemi.com PE42553 SPDT RF Switch Tape and Reel Specification Figure 22 • Tape and Reel Specifications for 16-lead 3 × 3 × 0.85 mm QFN Direction of Feed Ao Bo Ko F P1 W 3.30 ± 0.1 3.30 ± 0.1 1.10 ± 0.1 5.50 ± 0.05 8.00 ± 0.1 12.00 ± 0.3 Notes: 1. Measured from centerline of sprocket hole to centerline of pocket. Pin 1 2. Cumulative tolerance of 10 sprocket holes ± 0.20. 3. Measured from centerline of sprocket hole to centerline of sprocket. Dimensions are in millimeters unless otherwise specified. Device Orientation in Tape DOC-76991-3 – (06/2020) Page 19 of 20 www.psemi.com PE42553 SPDT RF Switch Ordering Information Table 7 lists the available ordering codes for the PE42553 as well as available shipping methods. Table 7 • Order Codes for PE42553 Order Codes Description Packaging Shipping Method PE42553B-Z PE42553 SPDT RF switch Green 16-lead 3 × 3 mm QFN 3000 units / T&R EK42553-02 PE42553 Evaluation kit Evaluation kit 1 / Box Document Categories Advance Information The product is in a formative or design stage. The datasheet contains design target specifications for product development. Specifications and features may change in any manner without notice. Preliminary Specification The datasheet contains preliminary data. Additional data may be added at a later date. pSemi reserves the right to change specifications at any time without notice in order to supply the best possible product. Product Specification The datasheet contains final data. In the event pSemi decides to change the specifications, pSemi will notify customers of the intended changes by issuing a CNF (Customer Notification Form). Sales Contact For additional information, contact Sales at sales@psemi.com. Disclaimers The information in this document is believed to be reliable. However, pSemi assumes no liability for the use of this information. Use shall be entirely at the user’s own risk. No patent rights or licenses to any circuits described in this document are implied or granted to any third party. pSemi’s products are not designed or intended for use in devices or systems intended for surgical implant, or in other applications intended to support or sustain life, or in any application in which the failure of the pSemi product could create a situation in which personal injury or death might occur. pSemi assumes no liability for damages, including consequential or incidental damages, arising out of the use of its products in such applications. Patent Statement pSemi products are protected under one or more of the following U.S. patents: patents.psemi.com Copyright and Trademark ©2016–2020 pSemi Corporation. All rights reserved. The Peregrine Semiconductor name, Peregrine Semiconductor logo and UltraCMOS are registered trademarks and the pSemi name, pSemi logo, HaRP and DuNE are trademarks of pSemi Corporation in the U.S. and other countries. Product Specification www.psemi.com DOC-76991-3 – (06/2020)