VTD34

Alternate Source/ Second Source Photodiodes VTD34 (BPW34 INDUSTRY EQUIVALENT) PACKAGE DIMENSIONS inch (mm) CASE 22 MINI DIP CHIP ACTIVE AREA: .012 in2 (7.45 mm2) PRODUCT DESCRIPTION Planar silicon photodiode in a transparent molded plastic package. Suitable for direct mounting to P.C.B. Arrays can be formed by positioning these devices side by side. These photodiodes are designed to provide excellent sensitivity at low levels of irradiance. ABSOLUTE MAXIMUM RATINGS Storage Temperature: Operating Temperature: -20°C to 80°C -20°C to 80°C ELECTRO-OPTICAL CHARACTERISTICS @ 25°C VTD34 SYMBOL ISC TC ISC VOC TC VOC ID CJ tR/tF SR λrange λp VBR θ1/2 NEP D* CHARACTERISTIC Short Circuit Current ISC Temperature Coefficient Open Circuit Voltage VOC Temperature Coefficient Dark Current Junction Capacitance Rise/Fall Time @ 1 kΩ Lead Sensitivity Spectral Application Range Spectral Response - Peak Breakdown Voltage Angular Resp.-50% Resp. Pt. Noise Equivalent Power Specific Detectivity 40 ±50 4.8 x 10 -14 5.7 x 1012 TEST CONDITIONS Min. 1000 Lux, 2850 K 2850 K H = 1000 Lux, 2850 K 2850 K H = 0, VR = 1 0 V @ 1 MHz, VR = 0 V VR = 10 V, 833 nm @ Peak 400 900 300 50 Typ. 70 .20 365 -2.0 2 60 50 0.60 1100 30 Max. µA %/°C mV mV/°C nA pF nsec A/W nm nm V Degrees W ⁄ Hz cm Hz / W UNITS PerkinElmer Optoelectronics, 10900 Page Ave., St. Louis, MO 63132 USA Phone: 314-423-4900 Fax: 314-423-3956 Web: www.perkinelmer.com/opto 73