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74AHCT1G04

74AHCT1G04

  • 厂商:

    PHILIPS

  • 封装:

  • 描述:

    74AHCT1G04 - Inverter - NXP Semiconductors

  • 数据手册
  • 价格&库存
74AHCT1G04 数据手册
INTEGRATED CIRCUITS DATA SHEET 74AHC1G04; 74AHCT1G04 Inverter Product specification Supersedes data of 2002 May 27 2003 Sep 04 Philips Semiconductors Product specification Inverter FEATURES • Symmetrical output impedance • High noise immunity • ESD protection: – HBM EIA/JESD22-A114-A exceeds 2000 V – MM EIA/JESD22-A115-A exceeds 200 V – CDM EIA/JESD22-C101 exceeds 1000 V. • Low power dissipation • Balanced propagation delays • Very small 5-pin package • Specified from −40 to +85 °C and −40 to +125 °C. QUICK REFERENCE DATA GND = 0 V; Tamb = 25 °C; tr = tf ≤ 3.0 ns. 74AHC1G04; 74AHCT1G04 DESCRIPTION The 74AHC1G04/74AHCT1G04 are high-speed Si-gate CMOS devices. The 74AHC1G04/74AHCT1G04 provides the inverting buffer. TYPICAL SYMBOL tPHL/tPLH CI CPD Notes 1. CPD is used to determine the dynamic power dissipation (PD in µW). PD = CPD × VCC2 × fi × N + ∑(CL × VCC2 × fo) where: fi = input frequency in MHz; fo = output frequency in MHz; CL = output load capacitance in pF; VCC = supply voltage in Volts; N = total load switching outputs; ∑(CL × VCC2 × fo) = sum of outputs. 2. The condition is VI = GND to VCC. PARAMETER CONDITIONS 74AHC1G04 propagation delay input A to output Y CL = 15 pF; VCC = 5 V input capacitance power dissipation capacitance CL = 50 pF; f = 1 MHz; notes 1 and 2 3.1 1.5 15 74AHCT1G04 3.4 1.5 16 ns pF pF UNIT 2003 Sep 04 2 Philips Semiconductors Product specification Inverter FUNCTION TABLE See note 1. INPUT A L H Note 1. H = HIGH voltage level; L = LOW voltage level. ORDERING AND PACKAGE INFORMATION 74AHC1G04; 74AHCT1G04 OUTPUT Y H L PACKAGES TYPE NUMBER 74AHC1G04GW 74AHCT1G04GW 74AHC1G04GV 74AHCT1G04GV PINNING PIN 1 2 3 4 5 n.c. A GND Y VCC SYMBOL not connected data input A ground (0 V) data output Y supply voltage DESCRIPTION TEMPERATURE RANGE −40 to +125 °C −40 to +125 °C −40 to +125 °C −40 to +125 °C PINS 5 5 5 5 PACKAGE SC-88A SC-88A SC-74A SC-74A MATERIAL plastic plastic plastic plastic CODE SOT353 SOT353 SOT753 SOT753 MARKING AC CC A04 C04 handbook, halfpage n.c. 1 A2 GND 3 MNA107 5 VCC handbook, halfpage 04 4 Y 2 A Y 4 MNA108 Fig.1 Pin configuration. Fig.2 Logic symbol. 2003 Sep 04 3 Philips Semiconductors Product specification Inverter 74AHC1G04; 74AHCT1G04 handbook, halfpage 2 1 4 handbook, halfpage A Y MNA110 MNA109 Fig.3 IEC logic symbol. Fig.4 Logic diagram. RECOMMENDED OPERATING CONDITIONS 74AHC1G04 SYMBOL VCC VI VO Tamb tr, tf (∆t/∆f) PARAMETER supply voltage input voltage output voltage operating ambient temperature input rise and fall times CONDITIONS MIN. 2.0 0 0 see DC and AC −40 characteristics per device VCC = 3.3 ±0.3 V VCC = 5 ±0.5 V − − TYP. 5.0 − − +25 − − MAX. 5.5 5.5 VCC +125 100 20 MIN. 4.5 0 0 −40 − − TYP. 5.0 − − +25 − − MAX. 5.5 5.5 VCC +125 − 20 V V V °C ns/V ns/V 74AHCT1G04 UNIT LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134); voltages are referenced to GND (ground = 0 V). SYMBOL VCC VI IIK IOK IO ICC, IGND Tstg PD Note 1. The input and output voltage ratings may be exceeded if the input and output current ratings are observed. PARAMETER supply voltage input voltage input diode current output diode current output source or sink current VCC or GND current storage temperature power dissipation Tamb = −40 to +125 °C VI < −0.5 V VO < −0.5 or VO > VCC + 0.5 V; note 1 −0.5 V < VO < VCC + 0.5 V CONDITIONS MIN. −0.5 −0.5 − − − − −65 − MAX. UNIT +7.0 +7.0 −20 ±20 ±25 ±75 +150 250 V V mA mA mA mA °C mW 2003 Sep 04 4 Philips Semiconductors Product specification Inverter DC CHARACTERISTICS 74AHC1G04; 74AHCT1G04 Type 74AHC1G04 At recommended operating conditions; voltages are referenced to GND (ground = 0 V). TEST CONDITIONS SYMBOL Tamb = 25 °C VIH HIGH-level input voltage 2.0 3.0 5.5 VIL LOW-level input voltage 2.0 3.0 5.5 VOH HIGH-level output voltage VI = VIH or VIL IO = −50 µA IO = −50 µA IO = −50 µA IO = −4.0 mA IO = −8.0 mA VOL LOW-level output voltage VI = VIH or VIL IO = 50 µA IO = 50 µA IO = 50 µA IO = 4.0 mA IO = 8.0 mA ILI ICC CI input leakage current quiescent supply current input capacitance VI = VCC or GND VI = VCC or GND; IO = 0 2.0 3.0 4.5 3.0 4.5 5.5 5.5 − − − − − − − − − 0 0 0 − − − − 1.5 0.1 0.1 0.1 0.36 0.36 0.1 10 10 V V V V V µA µA pF 2.0 3.0 4.5 3.0 4.5 1.9 2.9 4.4 2.58 3.94 2.0 3.0 4.5 − − − − − − − V V V V V 1.5 2.1 3.85 − − − − − − − − − − − − 0.5 0.9 1.65 V V V V V V PARAMETER OTHER VCC (V) MIN. TYP. MAX. UNIT 2003 Sep 04 5 Philips Semiconductors Product specification Inverter 74AHC1G04; 74AHCT1G04 TEST CONDITIONS SYMBOL PARAMETER OTHER Tamb = −40 to +85 °C VIH HIGH-level input voltage 2.0 3.0 5.5 VIL LOW-level input voltage 2.0 3.0 5.5 VOH HIGH-level output voltage VI = VIH or VIL IO = −50 µA IO = −50 µA IO = −50 µA IO = −4.0 mA IO = −8.0 mA VOL LOW-level output voltage VI = VIH or VIL IO = 50 µA IO = 50 µA IO = 50 µA IO = 4.0 mA IO = 8.0 mA ILI ICC CI input leakage current quiescent supply current input capacitance VI = VCC or GND VI = VCC or GND; IO = 0 2.0 3.0 4.5 3.0 4.5 5.5 5.5 − − − − − − − − − − − − − − − − − 0.1 0.1 0.1 0.44 0.44 1.0 10 10 V V V V V µA µA pF 2.0 3.0 4.5 3.0 4.5 1.9 2.9 4.4 2.48 3.8 − − − − − − − − − − V V V V V 1.5 2.1 3.85 − − − − − − − − − − − − 0.5 0.9 1.65 V V V V V V VCC (V) MIN. TYP. MAX. UNIT 2003 Sep 04 6 Philips Semiconductors Product specification Inverter 74AHC1G04; 74AHCT1G04 TEST CONDITIONS SYMBOL PARAMETER OTHER Tamb = −40 to +125 °C VIH HIGH-level input voltage 2.0 3.0 5.5 VIL LOW-level input voltage 2.0 3.0 5.5 VOH HIGH-level output voltage VI = VIH or VIL IO = −50 µA IO = −50 µA IO = −50 µA IO = −4.0 mA IO = −8.0 mA VOL LOW-level output voltage VI = VIH or VIL IO = 50 µA IO = 50 µA IO = 50 µA IO = 4.0 mA IO = 8.0 mA ILI ICC CI input leakage current quiescent supply current input capacitance VI = VCC or GND VI = VCC or GND; IO = 0 2.0 3.0 4.5 3.0 4.5 5.5 5.5 − − − − − − − − − − − − − − − − − 0.1 0.1 0.1 0.55 0.55 2.0 40 10 V V V V V µA µA pF 2.0 3.0 4.5 3.0 4.5 1.9 2.9 4.4 2.40 3.70 − − − − − − − − − − V V V V V 1.5 2.1 3.85 − − − − − − − − − − − − 0.5 0.9 1.65 V V V V V V VCC (V) MIN. TYP. MAX. UNIT 2003 Sep 04 7 Philips Semiconductors Product specification Inverter 74AHC1G04; 74AHCT1G04 Type 74AHCT1G04 At recommended operating conditions; voltages are referenced to GND (ground = 0 V). TEST CONDITIONS SYMBOL Tamb = 25 °C VIH VIL VOH HIGH-level input voltage LOW-level input voltage HIGH-level output voltage VI = VIH or VIL IO = −50 µA IO = −8.0 mA VOL LOW-level output voltage VI = VIH or VIL IO = 50 µA IO = 8.0 mA ILI ICC ∆ICC CI input leakage current quiescent supply current VI = VIH or VIL VI = VCC or GND; IO = 0 4.5 4.5 5.5 5.5 5.5 − − − − − − 0 − − − − 1.5 − − − − − − − − − − 0.1 0.36 0.1 1.0 1.35 10 − 0.8 − − 0.1 0.44 1.0 10 1.5 10 V V µA µA mA pF 4.5 4.5 4.4 3.94 4.5 − − − V V 4.5 to 5.5 4.5 to 5.5 2.0 − − − − 0.8 V V PARAMETER OTHER VCC (V) MIN. TYP. MAX. UNIT additional quiescent supply VI = 3.4 V; other inputs at current per input pin VCC or GND; IO = 0 input capacitance Tamb = −40 to +85 °C VIH VIL VOH HIGH-level input voltage LOW-level input voltage HIGH-level output voltage VI = VIH or VIL IO = −50 µA IO = −8.0 mA VOL LOW-level output voltage VI = VIH or VIL IO = 50 µA IO = 8.0 mA ILI ICC ∆ICC CI input leakage current quiescent supply current VI = VIH or VIL VI = VCC or GND; IO = 0 4.5 4.5 5.5 5.5 5.5 − − − − − − − V V µA µA mA pF 4.5 4.5 4.4 3.8 V V 4.5 to 5.5 4.5 to 5.5 2.0 − V V additional quiescent supply VI = 3.4 V; other inputs at current per input pin VCC or GND; IO = 0 input capacitance 2003 Sep 04 8 Philips Semiconductors Product specification Inverter 74AHC1G04; 74AHCT1G04 TEST CONDITIONS SYMBOL PARAMETER OTHER Tamb = −40 to +125 °C VIH VIL VOH HIGH-level input voltage LOW-level input voltage HIGH-level output voltage VI = VIH or VIL IO = −50 µA IO = −8.0 mA VOL LOW-level output voltage VI = VIH or VIL IO = 50 µA IO = 8.0 mA ILI ICC ∆ICC CI input leakage current quiescent supply current VI = VIH or VIL VI = VCC or GND; IO = 0 4.5 4.5 5.5 5.5 5.5 − − − − − − − − − − − − − 0.1 0.55 2.0 40 1.5 10 V V µA µA mA pF 4.5 4.5 4.4 3.70 − − − − V V 4.5 to 5.5 4.5 to 5.5 2.0 − − − − 0.8 V V VCC (V) MIN. TYP. MAX. UNIT additional quiescent supply VI = 3.4 V; other inputs at current per input pin VCC or GND; IO = 0 input capacitance 2003 Sep 04 9 Philips Semiconductors Product specification Inverter AC CHARACTERISTICS Type 74AHC1G04 GND = 0 V; tr = tf ≤ 3.0 ns. 74AHC1G04; 74AHCT1G04 TEST CONDITIONS SYMBOL Tamb = 25 °C tPHL/tPLH propagation delay input A to output Y see Figs 5 and 6 15 3.0 to 3.6 3.3 4.5 to 5.5 5 50 3.0 to 3.6 3.3 4.5 to 5.5 5 Tamb = −40 to +85 °C tPHL/tPLH propagation delay input A to output Y see Figs 5 and 6 15 50 Tamb = −40 to +125 °C tPHL/tPLH propagation delay input A to output Y see Figs 5 and 6 15 50 3.0 to 3.6 4.5 to 5.5 3.0 to 3.6 4.5 to 5.5 1.0 1.0 1.0 1.0 − − − − 11.0 7.0 14.5 9.5 ns ns ns ns 3.0 to 3.6 4.5 to 5.5 3.0 to 3.6 4.5 to 5.5 1.0 1.0 1.0 1.0 − − − − 8.5 6.5 12 8.5 ns ns ns ns − − − − − − − − − 4.3 − 3.1 − 6.1 − 4.5 7.1 − 5.5 − 10.6 − 7.5 − ns ns ns ns ns ns ns ns PARAMETER WAVEFORMS CL (pF) VCC (V) MIN. TYP. MAX. UNIT 2003 Sep 04 10 Philips Semiconductors Product specification Inverter Type 74AHCT1G04 GND = 0 V; tr = tf ≤ 3.0 ns. 74AHC1G04; 74AHCT1G04 TEST CONDITIONS SYMBOL Tamb = 25 °C tPHL/tPLH propagation delay input A to output Y see Figs 5 and 6 15 50 Tamb = −40 to +85 ° tPHL/tPLH propagation delay input A to output Y see Figs 5 and 6 15 50 4.5 to 5.5 4.5 to 5.5 1.0 1.0 − − − − 7.5 8.5 ns ns 4.5 to 5.5 5 4.5 to 5.5 5 − − − − − 3.4 − 4.9 6.7 − 7.7 − ns ns ns ns PARAMETER WAVEFORMS CL (pF) VCC (V) MIN. TYP. MAX. UNIT Tamb = −40 to +125 °C tPHL/tPLH propagation delay input A to output Y see Figs 5 and 6 15 50 4.5 to 5.5 4.5 to 5.5 1.0 1.0 8.5 10.0 ns ns 2003 Sep 04 11 Philips Semiconductors Product specification Inverter AC WAVEFORMS 74AHC1G04; 74AHCT1G04 handbook, halfpage A input VM tPHL tPLH Y output VM MNA111 TYPE 74AHC1G04 74AHCT1G04 VI INPUT REQUIREMENTS GND to VCC GND to 3.0 V VM INPUT 1.5 V VM OUTPUT 50% VCC 50% VCC 50% VCC Fig.5 Input (A) to output (Y) propagation delays. handbook, halfpage VCC VI D.U.T. RT CL MNA101 PULSE GENERATOR VO Definitions for test circuit: CL = load capacitance including jig and probe capacitance (see Chapter “AC characteristics”). RT = termination resistance should be equal to the output impedance Z0 of the pulse generator. Fig.6 Load circuitry for switching times. 2003 Sep 04 12 Philips Semiconductors Product specification Inverter PACKAGE OUTLINES Plastic surface mounted package; 5 leads 74AHC1G04; 74AHCT1G04 SOT353 D B E A X y HE vMA 5 4 Q A A1 1 e1 e 2 bp 3 wM B detail X Lp c 0 1 scale 2 mm DIMENSIONS (mm are the original dimensions) UNIT mm A 1.1 0.8 A1 max 0.1 bp 0.30 0.20 c 0.25 0.10 D 2.2 1.8 E (2) 1.35 1.15 e 1.3 e1 0.65 HE 2.2 2.0 Lp 0.45 0.15 Q 0.25 0.15 v 0.2 w 0.2 y 0.1 OUTLINE VERSION SOT353 REFERENCES IEC JEDEC EIAJ SC-88A EUROPEAN PROJECTION ISSUE DATE 97-02-28 2003 Sep 04 13 Philips Semiconductors Product specification Inverter 74AHC1G04; 74AHCT1G04 Plastic surface mounted package; 5 leads SOT753 D B E A X y HE vMA 5 4 Q A A1 c 1 2 3 detail X Lp e bp wM B 0 1 scale 2 mm DIMENSIONS (mm are the original dimensions) UNIT mm A 1.1 0.9 A1 0.100 0.013 bp 0.40 0.25 c 0.26 0.10 D 3.1 2.7 E 1.7 1.3 e 0.95 HE 3.0 2.5 Lp 0.6 0.2 Q 0.33 0.23 v 0.2 w 0.2 y 0.1 OUTLINE VERSION SOT753 REFERENCES IEC JEDEC JEITA SC-74A EUROPEAN PROJECTION ISSUE DATE 02-04-16 2003 Sep 04 14 Philips Semiconductors Product specification Inverter DATA SHEET STATUS LEVEL I DATA SHEET STATUS(1) Objective data PRODUCT STATUS(2)(3) Development 74AHC1G04; 74AHCT1G04 DEFINITION This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). II Preliminary data Qualification III Product data Production Notes 1. Please consult the most recently issued data sheet before initiating or completing a design. 2. The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. 3. For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status. DEFINITIONS Short-form specification  The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Limiting values definition  Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information  Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. DISCLAIMERS Life support applications  These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Right to make changes  Philips Semiconductors reserves the right to make changes in the products including circuits, standard cells, and/or software described or contained herein in order to improve design and/or performance. When the product is in full production (status ‘Production’), relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no licence or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified. 2003 Sep 04 15 Philips Semiconductors – a worldwide company Contact information For additional information please visit http://www.semiconductors.philips.com. Fax: +31 40 27 24825 For sales offices addresses send e-mail to: sales.addresses@www.semiconductors.philips.com. © Koninklijke Philips Electronics N.V. 2003 SCA75 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands R44/06/pp16 Date of release: 2003 Sep 04 Document order number: 9397 750 11919
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