BAV70T

DISCRETE SEMICONDUCTORS DATA SHEET M3D173 BAV70T High-speed double diode Product specification Supersedes data of 1997 Dec 19 2004 Feb 04 Philips Semiconductors Product specification High-speed double diode FEATURES • Very small plastic SMD package • High switching speed: max. 4 ns • Continuous reverse voltage: max. 100V • Repetitive peak reverse voltage: max. 100 V • Repetitive peak forward current: max. 500 mA. APPLICATIONS • High-speed switching in e.g. surface mounted circuits. 1 handbook, halfpage BAV70T PINNING PIN 1 2 3 anode 1 anode 2 common cathode DESCRIPTION 3 3 2 DESCRIPTION Two high-speed switching diodes in a common cathode configuration, fabricated in planar technology, in a very small rectangular SMD SOT416 (SC-75) package. 1 2 MAM368 Marking code: A4. Fig.1 Simplified outline (SOT416; SC-75) and symbol. ORDERING INFORMATION TYPE NUMBER BAV70T PACKAGE NAME − DESCRIPTION plastic surface mounted package; 3 leads VERSION SOT416 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER CONDITIONS − − Ts = 90 °C; see Fig.2 single diode loaded both diodes loaded IFRM IFSM repetitive peak forward current non-repetitive peak forward current square wave; Tj = 25 °C prior to surge; see Fig.4 t = 1 µs t = 1 ms t=1s Ptot Tstg Tj total power dissipation storage temperature junction temperature Ts = 90 °C; one diode loaded − − − − −65 − 4 1 0.5 170 +150 +150 A A A mW °C °C − − − 150 75 500 mA mA mA MIN. MAX. UNIT Per diode (unless otherwise specified) VRRM VR IF repetitive peak reverse voltage continuous reverse voltage continuous forward current 100 100 V V 2004 Feb 04 2 Philips Semiconductors Product specification High-speed double diode CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL Per diode VF forward voltage see Fig.3 IF = 1 mA IF = 10 mA IF = 50 mA IF = 150 mA IR reverse current see Fig.5 VR = 25 V VR = 75 V VR = 25 V; Tj = 150 °C VR = 75 V; Tj = 150 °C Cd trr Vfr diode capacitance reverse recovery time forward recovery voltage VR = 0; f = 1 MHz; see Fig.6 30 2 60 100 1.5 0.715 0.855 1 1.25 PARAMETER CONDITIONS BAV70T MAX. UNIT V V V V nA µA µA µA pF ns V switching from IF = 10 mA to IR = 10 mA; 4 RL = 100 Ω; measured at IR = 1 mA; see Fig.7 switched to IF = 10 mA; tr = 20 ns; see Fig.8 1.75 THERMAL CHARACTERISTICS SYMBOL Rth(j-s) PARAMETER thermal resistance from junction to soldering point CONDITIONS one diode loaded VALUE 350 UNIT K/W 2004 Feb 04 3 Philips Semiconductors Product specification High-speed double diode GRAPHICAL DATA BAV70T handbook, halfpage 300 MBK249 handbook, halfpage (1) 300 MBG382 IF (mA) 200 IF (mA) (1) (2) (3) 200 (2) 100 100 0 0 (1) One diode loaded. (2) Both diodes loaded. 100 Ts (°C) 200 0 0 1 VF (V) 2 (1) Tj = 150 °C; typical values. (2) Tj = 25 °C; typical values. (3) Tj = 25 °C; maximum values. Fig.2 Maximum permissible continuous forward current per diode as a function of soldering point temperature. Fig.3 Forward current as a function of forward voltage. 102 handbook, full pagewidth IFSM (A) MBG704 10 1 10−1 1 Based on square wave currents. Tj = 25 °C prior to surge. 10 102 103 tp (µs) 104 Fig.4 Maximum permissible non-repetitive peak forward current as a function of pulse duration. 2004 Feb 04 4 Philips Semiconductors Product specification High-speed double diode BAV70T 102 IR (µA) 10 VR = 75 V max 1 75 V MGA885 handbook, halfpage 0.8 MBG446 Cd (pF) 0.6 0.4 10 1 25 V 0.2 typ 10 2 0 typ 100 T j ( o C) 200 0 0 4 8 12 VR (V) 16 f = 1 MHz; Tj = 25 °C. Fig.5 Reverse current as a function of junction temperature. Fig.6 Diode capacitance as a function of reverse voltage; typical values. 2004 Feb 04 5 Philips Semiconductors Product specification High-speed double diode BAV70T handbook, full pagewidth tr D.U.T. 10% SAMPLING OSCILLOSCOPE R i = 50 Ω VR 90% tp t RS = 50 Ω V = VR I F x R S IF IF t rr t (1) MGA881 input signal output signal (1) IR = 1 mA. Input signal: reverse pulse rise time tr = 0.6 ns; reverse voltage pulse duration tp = 100 ns; duty factor δ = 0.05. Oscilloscope: rise time tr = 0.35 ns. Fig.7 Reverse recovery voltage test circuit and waveforms. I 1 kΩ 450 Ω I 90% V R S = 50 Ω D.U.T. OSCILLOSCOPE R i = 50 Ω 10% MGA882 V fr t tr tp t input signal output signal Input signal: forward pulse rise time tr = 20 ns; forward current pulse duration tp ≥ 100 ns; duty factor δ ≤ 0.005. Fig.8 Forward recovery voltage test circuit and waveforms. 2004 Feb 04 6 Philips Semiconductors Product specification High-speed double diode PACKAGE OUTLINE BAV70T Plastic surface mounted package; 3 leads SOT416 D B E A X vMA HE 3 Q A 1 e1 e bp 2 wM B A1 c Lp detail X 0 0.5 scale 1 mm DIMENSIONS (mm are the original dimensions) UNIT mm A 0.95 0.60 A1 max 0.1 bp 0.30 0.15 c 0.25 0.10 D 1.8 1.4 E 0.9 0.7 e 1 e1 0.5 HE 1.75 1.45 Lp 0.45 0.15 Q 0.23 0.13 v 0.2 w 0.2 OUTLINE VERSION SOT416 REFERENCES IEC JEDEC EIAJ SC-75 EUROPEAN PROJECTION ISSUE DATE 97-02-28 2004 Feb 04 7 Philips Semiconductors Product specification High-speed double diode DATA SHEET STATUS LEVEL I DATA SHEET STATUS(1) Objective data PRODUCT STATUS(2)(3) Development DEFINITION BAV70T This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). II Preliminary data Qualification III Product data Production Notes 1. Please consult the most recently issued data sheet before initiating or completing a design. 2. The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. 3. For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status. DEFINITIONS Short-form specification  The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Limiting values definition  Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information  Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. DISCLAIMERS Life support applications  These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Right to make changes  Philips Semiconductors reserves the right to make changes in the products including circuits, standard cells, and/or software described or contained herein in order to improve design and/or performance. When the product is in full production (status ‘Production’), relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no licence or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified. 2004 Feb 04 8 Philips Semiconductors – a worldwide company Contact information For additional information please visit http://www.semiconductors.philips.com. Fax: +31 40 27 24825 For sales offices addresses send e-mail to: sales.addresses@www.semiconductors.philips.com. © Koninklijke Philips Electronics N.V. 2004 SCA76 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands R76/03/pp9 Date of release: 2004 Feb 04 Document order number: 9397 750 12573