BB215

DISCRETE SEMICONDUCTORS DATA SHEET alfpage M3D155 BB215 UHF variable capacitance diode Product specification Supersedes data of November 1993 File under Discrete Semiconductors, SC01 1996 May 03 Philips Semiconductors Product specification UHF variable capacitance diode FEATURES • Excellent linearity • Matched to 3% • Small hermetically sealed glass SMD package • C28: 2 pF; ratio: 8.3 • Low series resistance. APPLICATIONS • Electronic tuning in UHF television tuners • VCO. DESCRIPTION The BB215 is a variable capacitance diode, fabricated in planar technology, and encapsulated in the SOD80 glass SMD package. Cathode side indicated by a white band. Second green band for type identification. MAM186 - 1 BB215 handbook, 4 columns k a Fig.1 Simplified outline (SOD80) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VR IF Tstg Tj PARAMETER continuous reverse voltage continuous forward current storage temperature operating junction temperature − − −55 −55 MIN. MAX. 30 20 +150 +100 V mA °C °C UNIT ELECTRICAL CHARACTERISTICS Tj = 25 °C; unless otherwise specified. SYMBOL IR rs Cd PARAMETER reverse current diode series resistance diode capacitance capacitance ratio CONDITIONS VR = 28 V; see Fig.3 VR = 28 V; Tj = 85 °C; see Fig.3 f = 470 MHz; note 1 VR = 1 V; f = 1 MHz; see Figs 2 and 4 VR = 28 V; f = 1 MHz; see Figs 2 and 4 C d ( 1V ) -------------------C d ( 28V ) ∆C d --------Cd Note 1. VR is the value at which Cd = 9 pF. f = 1 MHz MIN. − − − − 1.8 7.6 TYP. − − − 16.5 − 8.3 MAX. 10 200 0.75 18 2.2 − UNIT nA nA Ω pF pF capacitance matching VR = 0.5 to 28 V − − 3 % 1996 May 03 2 Philips Semiconductors Product specification UHF variable capacitance diode GRAPHICAL DATA BB215 MBE874 handbook, full pagewidth 20 Cd (pF) 16 12 8 4 0 10 −1 f = 1 MHz; Tj = 25 °C. 1 10 VR (V) 10 2 Fig.2 Diode capacitance as a function of reverse voltage; typical values. 10 3 handbook, halfpage MLC816 10 3 handbook, halfpage MLC815 IR (nA) TC d (K−1) 102 10 4 10 0 50 T j ( C) o 100 10 5 10 1 1 10 VR (V) 102 Tj = 0 to 85 °C. Fig.4 Fig.3 Reverse current as a function of junction temperature; maximum values. Temperature coefficient of diode capacitance as a function of reverse voltage; typical values. 1996 May 03 3 Philips Semiconductors Product specification UHF variable capacitance diode PACKAGE OUTLINE BB215 handbook, full pagewidth 1.7 O 1.5 0.3 3.7 3.3 Dimensions in mm. Cathode side indicated by a white band. Second green band for type identification. 0.3 MBA388 - 2 Fig.5 SOD80. DEFINITIONS Data sheet status Objective specification Preliminary specification Product specification Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications. 1996 May 03 4