BCY59VIII

DISCRETE SEMICONDUCTORS DATA SHEET M3D125 BCY58; BCY59 NPN switching transistors Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 1997 Jun 17 Philips Semiconductors Product specification NPN switching transistors FEATURES • Low current (max. 100 mA) • Low voltage (max. 45 V). APPLICATIONS • Switching and amplification. DESCRIPTION NPN switching transistor in a TO-18 metal package. PNP complements: BCY78 and BCY79. 3 BCY58; BCY59 PINNING PIN 1 2 3 emitter base collector, connected to case DESCRIPTION handbook, halfpage 1 3 2 MAM264 2 1 Fig.1 Simplified outline (TO-18) and symbol. QUICK REFERENCE DATA SYMBOL VCBO PARAMETER collector-base voltage BCY58 BCY59 VCEO collector-emitter voltage BCY58 BCY59 IC Ptot hFE collector current (DC) total power dissipation DC current gain BCY58/VII; BCY59/VII BCY58/VIII; BCY59/VIII BCY58/IX; BCY59/IX BCY58/X; BCY59/X fT toff transition frequency turn-off time IC = 10 mA; VCE = 5 V; f = 100 MHz ICon = 10 mA; IBon = 1 mA; IBoff = −1 mA Tamb ≤ 45 °C Tcase ≤ 45 °C IC = 2 mA; VCE = 5 V 120 180 250 380 150 − 170 250 350 500 − 480 450 220 310 460 630 − 800 800 MHz ns ns open base − − − − − − − − − − 32 45 100 340 1 V V mA mW W open emitter − − − − 32 45 V V CONDITIONS MIN. TYP. MAX. UNIT ICon = 100 mA; IBon = 10 mA; IBoff = −10 mA − 1997 Jun 17 2 Philips Semiconductors Product specification NPN switching transistors LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO BCY58 BCY59 VCEO collector-emitter voltage BCY58 BCY59 VEBO IC ICM IBM Ptot Tstg Tj Tamb emitter-base voltage collector current (DC) peak collector current peak base current total power dissipation storage temperature junction temperature operating ambient temperature Tamb ≤ 45 °C Tcase ≤ 45 °C open collector open base − − − − − − − − −65 − −65 PARAMETER collector-base voltage CONDITIONS open emitter − − BCY58; BCY59 MIN. MAX. 32 45 32 45 7 100 200 200 340 1 +150 200 +150 V V V V V UNIT mA mA mA mW W °C °C °C THERMAL CHARACTERISTICS SYMBOL Rth j-a Rth j-c PARAMETER thermal resistance from junction to case CONDITIONS VALUE 450 150 UNIT K/W K/W thermal resistance from junction to ambient in free air CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL ICBO BCY58 ICBO collector cut-off current BCY59 IEBO hFE emitter cut-off current DC current gain BCY58/VII; BCY59/VII BCY58/VIII; BCY59/VIII BCY58/IX; BCY59/IX BCY58/X; BCY59/X IE = 0; VCB = 45 V IE = 0; VCB = 45 V; Tj = 150 °C IC = 0; VEB = 5 V IC = 10 µA; VCE = 5 V − 20 40 100 20 95 190 300 − − − − − − − − − − 10 10 10 nA µA nA PARAMETER collector cut-off current IE = 0; VCB = 32 V IE = 0; VCB = 32 V; Tj = 150 °C − − − − 10 10 nA µA CONDITIONS MIN. TYP. MAX. UNIT 1997 Jun 17 3 Philips Semiconductors Product specification NPN switching transistors BCY58; BCY59 SYMBOL hFE PARAMETER DC current gain BCY58/VII; BCY59/VII BCY58/VIII; BCY59/VIII BCY58/IX; BCY59/IX BCY58/X; BCY59/X CONDITIONS IC = 2 mA; VCE = 5 V MIN. 120 180 250 380 TYP. 170 250 350 500 250 300 390 550 − − − − 100 250 700 875 − − − − MAX. 220 310 460 630 − 400 630 1000 − − − − 350 700 850 1200 5 15 − 10 UNIT hFE DC current gain BCY58/VII; BCY59/VII BCY58/VIII; BCY59/VIII BCY58/IX; BCY59/IX BCY58/X; BCY59/X IC = 10 mA; VCE = 1 V 80 120 160 240 IC = 100 mA; VCE = 1 V 40 45 60 60 50 150 600 750 − 150 − IC = 100 mA; IB = 2.5 mA hFE DC current gain BCY58/VII; BCY59/VII BCY58/VIII; BCY59/VIII BCY58/IX; BCY59/IX BCY58/X; BCY59/X VCEsat VBEsat Cc Ce fT F collector-emitter saturation voltage IC = 10 mA; IB = 0.25 mA base-emitter saturation voltage collector capacitance emitter capacitance transition frequency noise figure IC = 10 mA; IB = 0.25 mA IC = 100 mA; IB = 2.5 mA IE = ie = 0; VCB = 10 V; f = 1 MHz IC = 10 mA; VCE = 5 V; f = 100 MHz IC = 200 µA; VCE = 5 V; RS = 2 kΩ; f = 1 kHz; B = 200 Hz mV mV mV mV pF pF MHz dB IC = ic = 0; VEB = 500 mV; f = 1 MHz − Switching times (between 10% and 90% levels) ton td tr toff ts tf ton td tr toff ts tf turn-on time delay time rise time turn-off time storage time fall time turn-on time delay time rise time turn-off time storage time fall time ICon = 100 mA; IBon = 10 mA; IBoff = −10 mA ICon = 10 mA; IBon = 1 mA; IBoff = −1 mA − − − − − − − − − − − − 85 35 50 480 400 80 55 5 50 450 250 200 150 − − 800 − − 150 − − 800 − − ns ns ns ns ns ns ns ns ns ns ns ns 1997 Jun 17 4 Philips Semiconductors Product specification NPN switching transistors PACKAGE OUTLINE Metal-can cylindrical single-ended package; 3 leads BCY58; BCY59 SOT18/13 j B α seating plane wM AMBM 1 k D1 b 2 3 a A D A L 0 5 scale 10 mm DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT mm A 5.31 4.74 a 2.54 b 0.47 0.41 D 5.45 5.30 D1 4.70 4.55 j 1.03 0.94 k 1.1 0.9 L 15.0 12.7 w 0.40 α 45° OUTLINE VERSION SOT18/13 REFERENCES IEC B11/C7 type 3 JEDEC TO-18 EIAJ EUROPEAN PROJECTION ISSUE DATE 97-04-18 1997 Jun 17 5 Philips Semiconductors Product specification NPN switching transistors DEFINITIONS Data sheet status Objective specification Preliminary specification Product specification Limiting values BCY58; BCY59 This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications. Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 1997 Jun 17 6 Philips Semiconductors Product specification NPN switching transistors NOTES BCY58; BCY59 1997 Jun 17 7 Philips Semiconductors – a worldwide company Argentina: see South America Australia: 34 Waterloo Road, NORTH RYDE, NSW 2113, Tel. +61 2 9805 4455, Fax. +61 2 9805 4466 Austria: Computerstr. 6, A-1101 WIEN, P.O. Box 213, Tel. +43 1 60 101, Fax. +43 1 60 101 1210 Belarus: Hotel Minsk Business Center, Bld. 3, r. 1211, Volodarski Str. 6, 220050 MINSK, Tel. +375 172 200 733, Fax. +375 172 200 773 Belgium: see The Netherlands Brazil: see South America Bulgaria: Philips Bulgaria Ltd., Energoproject, 15th floor, 51 James Bourchier Blvd., 1407 SOFIA, Tel. +359 2 689 211, Fax. +359 2 689 102 Canada: PHILIPS SEMICONDUCTORS/COMPONENTS, Tel. +1 800 234 7381 China/Hong Kong: 501 Hong Kong Industrial Technology Centre, 72 Tat Chee Avenue, Kowloon Tong, HONG KONG, Tel. +852 2319 7888, Fax. +852 2319 7700 Colombia: see South America Czech Republic: see Austria Denmark: Prags Boulevard 80, PB 1919, DK-2300 COPENHAGEN S, Tel. +45 32 88 2636, Fax. +45 31 57 0044 Finland: Sinikalliontie 3, FIN-02630 ESPOO, Tel. +358 9 615800, Fax. +358 9 61580920 France: 4 Rue du Port-aux-Vins, BP317, 92156 SURESNES Cedex, Tel. +33 1 40 99 6161, Fax. +33 1 40 99 6427 Germany: Hammerbrookstraße 69, D-20097 HAMBURG, Tel. +49 40 23 53 60, Fax. +49 40 23 536 300 Greece: No. 15, 25th March Street, GR 17778 TAVROS/ATHENS, Tel. +30 1 4894 339/239, Fax. +30 1 4814 240 Hungary: see Austria India: Philips INDIA Ltd, Shivsagar Estate, A Block, Dr. Annie Besant Rd. Worli, MUMBAI 400 018, Tel. +91 22 4938 541, Fax. +91 22 4938 722 Indonesia: see Singapore Ireland: Newstead, Clonskeagh, DUBLIN 14, Tel. +353 1 7640 000, Fax. +353 1 7640 200 Israel: RAPAC Electronics, 7 Kehilat Saloniki St, PO Box 18053, TEL AVIV 61180, Tel. +972 3 645 0444, Fax. +972 3 649 1007 Italy: PHILIPS SEMICONDUCTORS, Piazza IV Novembre 3, 20124 MILANO, Tel. +39 2 6752 2531, Fax. +39 2 6752 2557 Japan: Philips Bldg 13-37, Kohnan 2-chome, Minato-ku, TOKYO 108, Tel. +81 3 3740 5130, Fax. +81 3 3740 5077 Korea: Philips House, 260-199 Itaewon-dong, Yongsan-ku, SEOUL, Tel. +82 2 709 1412, Fax. +82 2 709 1415 Malaysia: No. 76 Jalan Universiti, 46200 PETALING JAYA, SELANGOR, Tel. +60 3 750 5214, Fax. +60 3 757 4880 Mexico: 5900 Gateway East, Suite 200, EL PASO, TEXAS 79905, Tel. +9-5 800 234 7381 Middle East: see Italy Netherlands: Postbus 90050, 5600 PB EINDHOVEN, Bldg. VB, Tel. +31 40 27 82785, Fax. +31 40 27 88399 New Zealand: 2 Wagener Place, C.P.O. Box 1041, AUCKLAND, Tel. +64 9 849 4160, Fax. +64 9 849 7811 Norway: Box 1, Manglerud 0612, OSLO, Tel. +47 22 74 8000, Fax. +47 22 74 8341 Philippines: Philips Semiconductors Philippines Inc., 106 Valero St. Salcedo Village, P.O. Box 2108 MCC, MAKATI, Metro MANILA, Tel. +63 2 816 6380, Fax. +63 2 817 3474 Poland: Ul. Lukiska 10, PL 04-123 WARSZAWA, Tel. +48 22 612 2831, Fax. +48 22 612 2327 Portugal: see Spain Romania: see Italy Russia: Philips Russia, Ul. Usatcheva 35A, 119048 MOSCOW, Tel. +7 095 755 6918, Fax. +7 095 755 6919 Singapore: Lorong 1, Toa Payoh, SINGAPORE 1231, Tel. +65 350 2538, Fax. +65 251 6500 Slovakia: see Austria Slovenia: see Italy South Africa: S.A. PHILIPS Pty Ltd., 195-215 Main Road Martindale, 2092 JOHANNESBURG, P.O. Box 7430 Johannesburg 2000, Tel. +27 11 470 5911, Fax. +27 11 470 5494 South America: Rua do Rocio 220, 5th floor, Suite 51, 04552-903 São Paulo, SÃO PAULO - SP, Brazil, Tel. +55 11 821 2333, Fax. +55 11 829 1849 Spain: Balmes 22, 08007 BARCELONA, Tel. +34 3 301 6312, Fax. +34 3 301 4107 Sweden: Kottbygatan 7, Akalla, S-16485 STOCKHOLM, Tel. +46 8 632 2000, Fax. +46 8 632 2745 Switzerland: Allmendstrasse 140, CH-8027 ZÜRICH, Tel. +41 1 488 2686, Fax. +41 1 481 7730 Taiwan: Philips Semiconductors, 6F, No. 96, Chien Kuo N. Rd., Sec. 1, TAIPEI, Taiwan Tel. +886 2 2134 2865, Fax. +886 2 2134 2874 Thailand: PHILIPS ELECTRONICS (THAILAND) Ltd., 209/2 Sanpavuth-Bangna Road Prakanong, BANGKOK 10260, Tel. +66 2 745 4090, Fax. +66 2 398 0793 Turkey: Talatpasa Cad. No. 5, 80640 GÜLTEPE/ISTANBUL, Tel. +90 212 279 2770, Fax. +90 212 282 6707 Ukraine: PHILIPS UKRAINE, 4 Patrice Lumumba str., Building B, Floor 7, 252042 KIEV, Tel. +380 44 264 2776, Fax. +380 44 268 0461 United Kingdom: Philips Semiconductors Ltd., 276 Bath Road, Hayes, MIDDLESEX UB3 5BX, Tel. +44 181 730 5000, Fax. +44 181 754 8421 United States: 811 East Arques Avenue, SUNNYVALE, CA 94088-3409, Tel. +1 800 234 7381 Uruguay: see South America Vietnam: see Singapore Yugoslavia: PHILIPS, Trg N. Pasica 5/v, 11000 BEOGRAD, Tel. +381 11 625 344, Fax.+381 11 635 777 For all other countries apply to: Philips Semiconductors, Marketing & Sales Communications, Building BE-p, P.O. Box 218, 5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 27 24825 © Philips Electronics N.V. 1997 Internet: http://www.semiconductors.philips.com SCA54 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands 117047/00/02/pp8 Date of release: 1997 Jun 17 Document order number: 9397 750 02162