BFU725F_11

BFU725F/N1 NPN wideband silicon germanium RF transistor Rev. 2 — 3 November 2011 Product data sheet 1. Product profile 1.1 General description NPN silicon germanium microwave transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package. CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Observe precautions for handling electrostatic sensitive devices. Such precautions are described in the ANSI/ESD S20.20, IEC/ST 61340-5, JESD625-A or equivalent standards. 1.2 Features and benefits     Low noise high gain microwave transistor Noise figure (NF) = 0.7 dB at 5.8 GHz High maximum stable gain 27 dB at 1.8 GHz 110 GHz fT silicon germanium technology 1.3 Applications       2nd LNA stage and mixer stage in DBS LNB’s Satellite radio Low noise amplifiers for microwave communications systems WLAN and CDMA applications Analog/digital cordless applications Ka band oscillators (DRO’s) 1.4 Quick reference data Table 1. VCBO VCEO VEBO IC Ptot hFE Quick reference data Conditions open emitter open base open collector Tsp  90 C IC = 10 mA; VCE = 2 V; Tj = 25 C [1] Symbol Parameter collector-base voltage collector-emitter voltage emitter-base voltage collector current total power dissipation DC current gain Min 160 Typ 25 280 Max 10 2.8 1.0 40 136 400 Unit V V V mA mW NXP Semiconductors BFU725F/N1 NPN wideband silicon germanium RF transistor Quick reference data …continued Conditions VCB = 2 V; f = 1 MHz IC = 25 mA; VCE = 2 V; f = 2 GHz; Tamb = 25 C IC = 25 mA; VCE = 2 V; f = 5.8 GHz; Tamb = 25 C IC = 5 mA; VCE = 2 V; f = 5.8 GHz; S = opt; Tamb = 25 C [2] Table 1. CCBS fT Gp(max) NF Symbol Parameter collector-base capacitance transition frequency maximum power gain noise figure Min - Typ 70 55 18 0.7 Max - Unit fF GHz dB dB [1] [2] Tsp is the temperature at the solder point of the emitter lead. Gp(max) is the maximum power gain, if K > 1. If K < 1 then Gp(max) = Maximum Stable Gain (MSG). 2. Pinning information Table 2. Pin 1 2 3 4 Discrete pinning Description emitter base emitter collector 1, 3 2 1 mbb159 Simplified outline 3 4 Graphic symbol 4 2 3. Ordering information Table 3. Ordering information Package Name BFU725F/N1 Description plastic surface-mounted flat pack package; reverse pinning; 4 leads Version SOT343F Type number 4. Marking Table 4. Marking Marking B7* Description * = p : made in Hong Kong * = t : made in Malaysia * = W : made in China Type number BFU725F/N1 BFU725F_N1 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved. Product data sheet Rev. 2 — 3 November 2011 2 of 12 NXP Semiconductors BFU725F/N1 NPN wideband silicon germanium RF transistor 5. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol VCBO VCEO VEBO IC Ptot Tstg Tj [1] Parameter collector-base voltage collector-emitter voltage emitter-base voltage collector current total power dissipation storage temperature junction temperature Conditions open emitter open base open collector Tsp  90 C [1] Min 65 - Max 10 2.8 1.0 40 136 +150 150 Unit V V V mA mW C C Tsp is the temperature at the solder point of the emitter lead. 6. Thermal characteristics Table 6. Symbol Rth(j-sp) Thermal characteristics Parameter thermal resistance from junction to solder point Conditions Typ 440 Unit K/W 200 Ptot (mW) 150 001aah424 100 50 0 0 40 80 120 Tsp (°C) 160 Fig 1. Power derating curve BFU725F_N1 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved. Product data sheet Rev. 2 — 3 November 2011 3 of 12 NXP Semiconductors BFU725F/N1 NPN wideband silicon germanium RF transistor 7. Characteristics Table 7. Characteristics Tj = 25 C unless otherwise specified. Symbol Parameter V(BR)CBO collector-base breakdown voltage V(BR)CEO collector-emitter breakdown voltage IC ICBO hFE CCES CEBS CCBS fT Gp(max) collector current collector-base cut-off current DC current gain collector-emitter capacitance emitter-base capacitance collector-base capacitance transition frequency maximum power gain IE = 0 mA; VCB = 4.5 V IC = 10 mA; VCE = 2 V VCB = 2 V; f = 1 MHz VEB = 0.5 V; f = 1 MHz VCB = 2 V; f = 1 MHz IC = 25 mA; VCE = 2 V; f = 2 GHz; Tamb = 25 C IC = 25 mA; VCE = 2 V; Tamb = 25 C f = 1.5 GHz f = 1.8 GHz f = 2.4 GHz f = 5.8 GHz f = 12 GHz s212 insertion power gain IC = 25 mA; VCE = 2 V; Tamb = 25 C f = 1.5 GHz f = 1.8 GHz f = 2.4 GHz f = 5.8 GHz f = 12 GHz NF noise figure IC = 5 mA; VCE = 2 V; S = opt; Tamb = 25 C f = 1.5 GHz f = 1.8 GHz f = 2.4 GHz f = 5.8 GHz f = 12 GHz Gass associated gain IC = 5 mA; VCE = 2 V; S = opt; Tamb = 25 C f = 1.5 GHz f = 1.8 GHz f = 2.4 GHz f = 5.8 GHz f = 12 GHz 24 22 20 10 dB dB dB dB dB 0.42 0.43 0.47 0.7 1.1 dB dB dB dB dB 26.7 25.4 23 16 9.3 dB dB dB dB dB [1] Conditions IC = 2.5 A; IE = 0 mA IC = 1 mA; IB = 0 mA Min Typ Max Unit 10 2.8 25 268 400 70 55 28 27 18 13 40 400 fF fF fF GHz dB dB dB dB dB V V mA 100 nA 160 280 25.5 - 13.5 - BFU725F_N1 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved. Product data sheet Rev. 2 — 3 November 2011 4 of 12 NXP Semiconductors BFU725F/N1 NPN wideband silicon germanium RF transistor Table 7. Characteristics …continued Tj = 25 C unless otherwise specified. Symbol Parameter PL(1dB) output power at 1 dB gain compression Conditions IC = 25 mA; VCE = 2 V; ZS = ZL = 50 ; Tamb = 25 C f = 1.5 GHz f = 1.8 GHz f = 2.4 GHz f = 5.8 GHz IP3 third-order intercept point IC = 25 mA; VCE = 2 V; ZS = ZL = 50 ; Tamb = 25 C; f2 = f1 + 1 MHz f1 = 1.5 GHz f1 = 1.8 GHz f1 = 2.4 GHz f1 = 5.8 GHz [1] Gp(max) is the maximum power gain, if K  1. If K  1 then Gp(max) = MSG. Min Typ Max Unit 8.5 9 8.5 8 dBm dBm dBm dBm - 17 17 17 19 - dBm dBm dBm dBm 30 IC (mA) 20 001aak271 400 hFE 350 001aak272 (1) (2) (3) (4) (5) (6) (7) (8) 300 10 (9) (10) (11) 250 (1) (2) (3) 0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 VCE (V) 200 0 10 20 IC (mA) 30 Tamb = 25 C. (1) IB = 110 A (2) IB = 100 A (3) IB = 90 A (4) IB = 80 A (5) IB = 70 A (6) IB = 60 A (7) IB = 50 A (8) IB = 40 A (9) IB = 30 A (10) IB = 20 A (11) IB = 10 A Tamb = 25 C. (1) VCE = 1 V (2) VCE = 1.5 V (3) VCE = 2 V Fig 2. Collector current as a function of collector-emitter voltage; typical values Fig 3. DC current gain a function of collector current; typical values BFU725F_N1 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved. Product data sheet Rev. 2 — 3 November 2011 5 of 12 NXP Semiconductors BFU725F/N1 NPN wideband silicon germanium RF transistor 160 CCBS (fF) 120 001aah427 60 fT (GHz) 40 001aak273 80 20 40 0 0 4 8 VCB (V) 12 0 0 10 20 30 IC (mA) 40 f = 1 MHz, Tamb = 25 C. VCE = 2 V; f = 2 GHz; Tamb = 25 C. Fig 4. Collector-base capacitance as a function of collector-base voltage; typical values 102 Fig 5. Transition frequency as a function of collector current; typical values 001aah429 G (dB) (1) (2) (3) MSG Gmax (4) (5) MSG 10 Gmax 1 10−1 1 10 IC (mA) 102 VCE = 2 V; Tamb = 25 C. (1) f = 1.5 GHz (2) f = 1.8 GHz (3) f = 2.4 GHz (4) f = 5.8 GHz (5) f = 12 GHz Fig 6. Gain as a function of collector current; typical value BFU725F_N1 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved. Product data sheet Rev. 2 — 3 November 2011 6 of 12 NXP Semiconductors BFU725F/N1 NPN wideband silicon germanium RF transistor 50 G (dB) 40 MSG 001aah430 50 G (dB) 40 IS21I2 MSG 001aah431 30 IS21I2 20 Gp(max) 10 MSG 30 20 Gp(max) MSG 10 0 10−2 10−1 1 10 f (GHz) 102 0 10−2 10−1 1 10 f (GHz) 102 VCE = 2 V; IC = 5 mA; Tamb = 25 C. VCE = 2 V; IC = 25 mA; Tamb = 25 C. Fig 7. 2.0 NFmin (dB) 1.6 Gain as a function of frequency; typical values 001aah432 Fig 8. 2.0 NFmin (dB) 1.6 Gain as a function of frequency; typical values 001aah433 (1) (1) (2) 1.2 (2) 1.2 0.8 (3) (4) (5) 0.8 0.4 0.4 0 0 10 20 IC (mA) 30 0 0 4 8 12 f (GHz) 16 VCE = 2 V; Tamb = 25 C. (1) f = 12 GHz (2) f = 5.8 GHz (3) f = 2.4 GHz (4) f = 1.8 GHz (5) f = 1.5 GHz VCE = 2 V; Tamb = 25 C. (1) IC = 25 mA (2) IC = 5 mA Fig 9. Minimum noise figure as a function of collector current; typical values Fig 10. Minimum noise figure as a function of frequency; typical values BFU725F_N1 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved. Product data sheet Rev. 2 — 3 November 2011 7 of 12 NXP Semiconductors BFU725F/N1 NPN wideband silicon germanium RF transistor 8. Package outline Plastic surface-mounted flat pack package; reverse pinning; 4 leads SOT343F D A E y HE X e 3 4 A c Lp w M 2 1 w M A bp e1 b1 A detail X 0 1 scale 2 mm DIMENSIONS (mm are the original dimensions) UNIT mm A max 0.75 0.65 bp 0.4 0.3 b1 0.7 0.5 c 0.25 0.10 D 2.2 1.8 E 1.35 1.15 e 1.3 e1 1.15 HE 2.2 2.0 Lp 0.48 0.38 w 0.2 y 0.1 OUTLINE VERSION SOT343F REFERENCES IEC JEDEC JEITA EUROPEAN PROJECTION ISSUE DATE 05-07-12 06-03-16 Fig 11. Package outline SOT343F BFU725F_N1 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved. Product data sheet Rev. 2 — 3 November 2011 8 of 12 NXP Semiconductors BFU725F/N1 NPN wideband silicon germanium RF transistor 9. Abbreviations Table 8. Acronym CDMA DBS DC DRO LNA LNB Ka NPN RF WLAN Abbreviations Description Code Division Multiple Access Direct Broadcast Satellite Direct Current Dielectric Resonator Oscillator Low Noise Amplifier Low Noise Block Kurtz above Negative-Positive-Negative Radio Frequency Wireless Local Area Network 10. Revision history Table 9. Revision history Release date 20111103 Data sheet status Product data sheet Change notice Supersedes BFU725F_N1 v.1 Document ID BFU725F_N1 v.2 Modifications: BFU725F_N1 v.1 • • Table 1 on page 1: The maximum value for VEBO has been changed to 1.0 V. Table 5 on page 3: The maximum value for VEBO has been changed to 1.0 V. Product data sheet - 20090713 BFU725F_N1 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved. Product data sheet Rev. 2 — 3 November 2011 9 of 12 NXP Semiconductors BFU725F/N1 NPN wideband silicon germanium RF transistor 11. Legal information 11.1 Data sheet status Product status[3] Development Qualification Production Definition This document contains data from the objective specification for product development. This document contains data from the preliminary specification. This document contains the product specification. Document status[1][2] Objective [short] data sheet Preliminary [short] data sheet Product [short] data sheet [1] [2] [3] Please consult the most recently issued document before initiating or completing a design. The term ‘short data sheet’ is explained in section “Definitions”. The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. 11.2 Definitions Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. Product specification — The information and data provided in a Product data sheet shall define the specification of the product as agreed between NXP Semiconductors and its customer, unless NXP Semiconductors and customer have explicitly agreed otherwise in writing. In no event however, shall an agreement be valid in which the NXP Semiconductors product is deemed to offer functions and qualities beyond those described in the Product data sheet. malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Customers are responsible for the design and operation of their applications and products using NXP Semiconductors products, and NXP Semiconductors accepts no liability for any assistance with applications or customer product design. It is customer’s sole responsibility to determine whether the NXP Semiconductors product is suitable and fit for the customer’s applications and products planned, as well as for the planned application and use of customer’s third party customer(s). Customers should provide appropriate design and operating safeguards to minimize the risks associated with their applications and products. NXP Semiconductors does not accept any liability related to any default, damage, costs or problem which is based on any weakness or default in the customer’s applications or products, or the application or use by customer’s third party customer(s). Customer is responsible for doing all necessary testing for the customer’s applications and products using NXP Semiconductors products in order to avoid a default of the applications and the products or of the application or use by customer’s third party customer(s). NXP does not accept any liability in this respect. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) will cause permanent damage to the device. Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or the Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. Terms and conditions of commercial sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, unless otherwise agreed in a valid written individual agreement. In case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. NXP Semiconductors hereby expressly objects to applying the customer’s general terms and conditions with regard to the purchase of NXP Semiconductors products by customer. No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from competent authorities. © NXP B.V. 2011. All rights reserved. 11.3 Disclaimers Limited warranty and liability — Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. In no event shall NXP Semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation - lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. Notwithstanding any damages that customer might incur for any reason whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards customer for the products described herein shall be limited in accordance with the Terms and conditions of commercial sale of NXP Semiconductors. Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use — NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in life support, life-critical or safety-critical systems or equipment, nor in applications where failure or BFU725F_N1 All information provided in this document is subject to legal disclaimers. Product data sheet Rev. 2 — 3 November 2011 10 of 12 NXP Semiconductors BFU725F/N1 NPN wideband silicon germanium RF transistor product for such automotive applications, use and specifications, and (b) whenever customer uses the product for automotive applications beyond NXP Semiconductors’ specifications such use shall be solely at customer’s own risk, and (c) customer fully indemnifies NXP Semiconductors for any liability, damages or failed product claims resulting from customer design and use of the product for automotive applications beyond NXP Semiconductors’ standard warranty and NXP Semiconductors’ product specifications. Quick reference data — The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. Non-automotive qualified products — Unless this data sheet expressly states that this specific NXP Semiconductors product is automotive qualified, the product is not suitable for automotive use. It is neither qualified nor tested in accordance with automotive testing or application requirements. NXP Semiconductors accepts no liability for inclusion and/or use of non-automotive qualified products in automotive equipment or applications. In the event that customer uses the product for design-in and use in automotive applications to automotive specifications and standards, customer (a) shall use the product without NXP Semiconductors’ warranty of the 11.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. 12. Contact information For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com BFU725F_N1 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved. Product data sheet Rev. 2 — 3 November 2011 11 of 12 NXP Semiconductors BFU725F/N1 NPN wideband silicon germanium RF transistor 13. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 9 10 11 11.1 11.2 11.3 11.4 12 13 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description . . . . . . . . . . . . . . . . . . . . . 1 Features and benefits . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal characteristics . . . . . . . . . . . . . . . . . . 3 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 8 Abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . 9 Legal information. . . . . . . . . . . . . . . . . . . . . . . 10 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 10 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Contact information. . . . . . . . . . . . . . . . . . . . . 11 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2011. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Date of release: 3 November 2011 Document identifier: BFU725F_N1