BGA6289

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D109 BGA6289 MMIC wideband medium power amplifier Product specification 2003 Sep 18 Philips Semiconductors Product specification MMIC wideband medium power amplifier FEATURES • Broadband 50 Ω gain block • 17 dBm output power • SOT89 package • Single supply voltage needed. APPLICATIONS • Broadband medium power gain blocks • Small signal high linearity amplifiers • Variable gain and high output power in combination with the BGA2031 • Cellular, PCS and CDPD • IF/RF buffer amplifier • Wireless data SONET • Oscillator amplifier, final PA • Drivers for CATV amplifier. DESCRIPTION Silicon Monolithic Microwave Integrated Circuit (MMIC) wideband medium power amplifier with internal matching circuit in a 4-pin SOT89 plastic low thermal resistance SMD package. The BGA6x89 series of medium power gain blocks are resistive feedback Darlington configured amplifiers. Resistive feedback provides large bandwidth with high accuracy. QUICK REFERENCE DATA SYMBOL VS IS |s21|2 NF PL 1 dB PARAMETER DC supply voltage DC supply current insertion power gain noise figure load power at 1 dB compression IS = 84 mA VS = 8 V; R1 = 47 Ω; Tj = 25 °C f = 1.95 GHz f = 1.95 GHz f = 850 MHz f = 1.95 GHz CAUTION CONDITIONS Marking code: 3A. 1 2 Bottom view 3 handbook, halfpage BGA6289 PINNING PIN 1 2 3 RF out/bias GND RF in DESCRIPTION 3 2 1 MGX418 Fig.1 Simplified outline (SOT89) and symbol. TYP. 4.1 88 13 4 18 16 UNIT V mA dB dB dBm dBm This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A and SNW-FQ-302B. 2003 Sep 18 2 Philips Semiconductors Product specification MMIC wideband medium power amplifier LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134) SYMBOL VS IS Ptot Tstg Tj PD Note 1. Ts is the temperature at the soldering point of pin 2. THERMAL CHARACTERISTICS SYMBOL Rth j-s Note 1. Ts is the temperature at the soldering point of pin 2. STATIC CHARACTERISTICS Tj = 25 °C; VS = 8 V; R1 = 47 Ω; unless otherwise specified. SYMBOL IS PARAMETER supply current CONDITIONS MIN. 79 TYP. 88 PARAMETER thermal resistance from junction to solder point CONDITIONS Ts ≤ 70 °C; note 1 PARAMETER DC supply voltage DC supply current total power dissipation storage temperature operating junction temperature maximum drive power Ts ≤ 70 °C; note 1 CONDITIONS RF input AC coupled − − − −65 − − MIN. 6 BGA6289 MAX. 150 800 +150 150 15 UNIT V mA mW °C °C dBm VALUE 100 UNIT K/W MAX. 96 UNIT mA 2003 Sep 18 3 Philips Semiconductors Product specification MMIC wideband medium power amplifier BGA6289 CHARACTERISTICS VS = 8 V; IS = 84 mA; Tamb = 25 °C; IP3(out) tone spacing = 1 MHz; PL = 0 dBm per tone (see Fig.2); R1 = 47 Ω; ZL = ZS = 50 Ω; unless otherwise specified. SYMBOL |s21|2 PARAMETER insertion power gain f = 850 MHz f = 1.95 GHz f = 2.5 GHz RL IN return losses input f = 850 MHz f = 1.95 GHz f = 2.5 GHz RL OUT return losses output f = 850 MHz f = 1.95 GHz f = 2.5 GHz NF noise figure f = 850 MHz f = 1.95 GHz f = 2.5 GHz K PL 1 dB IP3(in) IP3(out) stability factor load power input intercept point output intercept point f = 850 MHz f = 2.5 GHz at 1 dB gain compression; f = 850 MHz at 1 dB gain compression; f = 1.95 GHz f = 850 MHz f = 2.5 GHz f = 850 MHz f = 2.5 GHz CONDITIONS TYP. 15 13 12 11 11 14 11 14 14 3.5 3.7 3.8 1.3 1.6 17 15 17 14 31 25 UNIT dB dB dB dB dB dB dB dB dB dB dB dB − − dBm dBm dBm dBm dBm dBm 2003 Sep 18 4 Philips Semiconductors Product specification MMIC wideband medium power amplifier APPLICATION INFORMATION BGA6289 Figure 2 shows a typical application circuit for the BGA6289 MMIC. The device is internally matched to 50 Ω, and therefore does not require any external matching. The value of the input and output DC blocking capacitors C1 and C2 depends on the operating frequency; see the tables below. Capacitors C1 and C2 are used in conjunction with L1 and C3 to fine tune the input and output impedance. For optimum supply decoupling, a 1 µF capacitor (C5) can be added. The external components should be placed as close as possible to the MMIC. When using via holes, use multiple via holes per pin in order to limit ground path induction. Resistor R1 is a bias resistor providing DC current stability with temperature. handbook, full pagewidth R1(2) VS C3 L1 50 Ω microstrip C1 VD C2 50 Ω microstrip C4 C5(1) 3 2 1 MGX419 (1) Optional capacitor for optimum supply decoupling. (2) R1 values at operating supply voltage: VS = 6 V; R1 = 15 Ω. VS = 9 V; R1 = 51 Ω. VS = 11.5 V; R1 = 82 Ω. Fig.2 Typical application circuit. Table 1 Component descriptions (see Fig.2) VALUE AT OPERATING FREQUENCY COMPONENT C1, C2 C3 C4 C5 (optional) L1 R1 DESCRIPTION multilayer ceramic chip capacitor multilayer ceramic chip capacitor multilayer ceramic chip capacitor electrolytic or tantalum capacitor SMD inductor SMD resistor 0.5 W; VS = 9 V DIMENSIONS 0603 0603 0603 0603 0603 − 500 MHz 1 nF 1 µF 68 nH − 800 MHz 1 nF 1 µF 33 nH − 1950 MHz 1 nF 22 pF 1 µF 22 nH − 2400 MHz 56 pF 1 nF 22 pF 1 µF 18 nH − 3500 MHz 39 pF 1 nF 15 pF 1 µF 15 nH − 220 pF 100 pF 68 pF 100 pF 68 pF 2003 Sep 18 5 Philips Semiconductors Product specification MMIC wideband medium power amplifier BGA6289 handbook, full pagewidth 90° +1 135° + 0.5 +2 45° 1.0 0.8 0.6 0.4 0.2 180° 0 0.2 0.5 2.6 GHz 200 MHz 2 5 10 0° 0 + 0.2 +5 − 0.2 −5 − 135° − 0.5 −1 − 90° −2 − 45° 1.0 MGX420 IS = 84 mA; VS = 8 V; PD = −30 dBm; ZO = 50 Ω. Fig.3 Input reflection coefficient (s11); typical values. handbook, full pagewidth 90° +1 135° + 0.5 +2 45° 1.0 0.8 0.6 0.4 0.2 1 2 200 MHz − 0.2 −5 5 10 0° 0 + 0.2 2.6 GHz 180° 0 0.2 0.5 +5 − 135° − 0.5 −1 − 90° −2 − 45° 1.0 MGX421 IS = 84 mA; VS = 8 V; PD = −30 dBm; ZO = 50 Ω. Fig.4 Output reflection coefficient (s22); typical values. 2003 Sep 18 6 Philips Semiconductors Product specification MMIC wideband medium power amplifier BGA6289 handbook, halfpage |s |2 0 MGX422 12 (dB) handbook, halfpage |s |2 25 MGX423 21 (dB) − 10 20 15 − 20 10 − 30 5 − 40 0 0 500 1000 1500 2000 2500 f (MHz) 0 500 1000 1500 2000 2500 f (MHz) IS = 84 mA; VS = 8 V; PD = −30 dBm; ZO = 50 Ω. IS = 84 mA; VS = 8 V; PD = −30 dBm; ZO = 50 Ω. Fig.5 Isolation (|s12|2) as a function of frequency; typical values. Fig.6 Insertion gain (|s21|2) as a function of frequency; typical values. handbook, halfpage 25 MGX424 PL1dB (dBm) handbook, halfpage 40 MGX425 IP3(out) (dBm) 30 20 15 20 10 10 5 0 0 500 1000 1500 2000 2500 f (MHz) 0 0 500 1000 1500 2000 2500 f (MHz) IS = 84 mA; VS = 8 V; ZO = 50 Ω. IS = 84 mA; VS = 8 V; PL = 0 dBm; ZO = 50 Ω. Fig.7 Load power as a function of frequency; typical values. Fig.8 Output intercept point as a function of frequency; typical values. 2003 Sep 18 7 Philips Semiconductors Product specification MMIC wideband medium power amplifier BGA6289 handbook, halfpage 5 MGX426 handbook, halfpage 5 MGX427 NF (dB) 4 K 4 3 3 2 2 1 1 0 0 500 1000 1500 2000 2500 f (MHz) 0 0 500 1000 1500 2000 2500 f (MHz) IS = 84 mA; VS = 8 V; ZO = 50 Ω. IS = 84 mA; VS = 8 V; ZO = 50 Ω. Fig.9 Noise figure as a function of frequency; typical values. Fig.10 Stability factor as a function of frequency; typical values. handbook, halfpage 100 MGX428 Is (mA) 90 80 70 60 − 40 − 20 0 20 40 60 80 Tj (°C) VS = 8 V; R1 = 47 Ω. Fig.11 Supply current as a function of operating junction temperature; typical values. 2003 Sep 18 8 This text is here in white to force landscape pages to be rotated correctly when browsing through the pdf in the Acrobat reader.This text is here in _white to force landscape pages to be rotated correctly when browsing through the pdf in the Acrobat reader.This text is here inThis text is here in white to force landscape pages to be rotated correctly when browsing through the pdf in the Acrobat reader. white to force landscape pages to be ... Scattering parameters VS = 8 V; IS = 83 mA; PD = −30 dBm; ZO = 50 Ω; Tamb = 25 °C s11 f (MHz) 800 1000 1200 1400 1600 1800 2000 2200 2400 2600 MAGNITUDE (ratio) 0.27 0.28 0.29 0.29 0.29 0.28 0.26 0.24 0.22 0.19 ANGLE (deg) −33.05 −42.87 −52.85 −62.55 −73.03 −83.21 −94.25 −106.7 −120.4 −137.7 s21 MAGNITUDE (ratio) 5.49 5.20 5.00 4.69 4.55 4.31 4.18 4.02 3.91 3.71 ANGLE (deg) 134.89 124.72 115.06 105.73 97.33 88.55 80.63 72.01 63.83 55.62 s12 MAGNITUDE (ratio) 0.10 0.09 0.09 0.09 0.09 0.08 0.08 0.08 0.08 0.09 ANGLE (deg) −11.30 −12.71 −13.51 −13.66 −13.18 −12.17 −12.11 −10.45 −10.70 −10.65 s22 MAGNITUDE (ratio) 0.29 0.28 0.27 0.25 0.23 0.21 0.19 0.18 0.18 0.20 ANGLE (deg) −76.80 −92.51 −107.2 −121.6 −136.8 −153.4 −172.3 166.36 144.2 122.13 K-FACTOR 1.2 1.2 1.3 1.4 1.4 1.5 1.5 1.5 1.6 1.2 2003 Sep 18 2003 Sep 18 9 9 Philips Semiconductors MMIC wideband medium power amplifier MMIC wideband medium power amplifier BGA6289 BGA6289 Product specification Philips Semiconductors Product specification MMIC wideband medium power amplifier PACKAGE OUTLINE Plastic surface mounted package; collector pad for good heat transfer; 3 leads BGA6289 SOT89 D B A b3 E HE L 1 2 b2 3 c wM b1 e1 e 0 2 scale 4 mm DIMENSIONS (mm are the original dimensions) UNIT mm A 1.6 1.4 b1 0.48 0.35 b2 0.53 0.40 b3 1.8 1.4 c 0.44 0.37 D 4.6 4.4 E 2.6 2.4 e 3.0 e1 1.5 HE 4.25 3.75 L min. 0.8 w 0.13 OUTLINE VERSION SOT89 REFERENCES IEC JEDEC TO-243 EIAJ SC-62 EUROPEAN PROJECTION ISSUE DATE 97-02-28 99-09-13 2003 Sep 18 10 Philips Semiconductors Product specification MMIC wideband medium power amplifier DATA SHEET STATUS LEVEL I DATA SHEET STATUS(1) Objective data PRODUCT STATUS(2)(3) Development DEFINITION BGA6289 This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). II Preliminary data Qualification III Product data Production Notes 1. Please consult the most recently issued data sheet before initiating or completing a design. 2. The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. 3. For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status. DEFINITIONS Short-form specification  The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Limiting values definition  Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information  Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. DISCLAIMERS Life support applications  These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Right to make changes  Philips Semiconductors reserves the right to make changes in the products including circuits, standard cells, and/or software described or contained herein in order to improve design and/or performance. When the product is in full production (status ‘Production’), relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no licence or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified. 2003 Sep 18 11 Philips Semiconductors – a worldwide company Contact information For additional information please visit http://www.semiconductors.philips.com. Fax: +31 40 27 24825 For sales offices addresses send e-mail to: sales.addresses@www.semiconductors.philips.com. © Koninklijke Philips Electronics N.V. 2003 SCA75 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands R77/01/pp12 Date of release: 2003 Sep 18 Document order number: 9397 750 11766