BGY148B

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D188 BGY148A; BGY148B HF amplifier modules Product specification Supersedes data of 1997 Jul 14 1998 May 13 Philips Semiconductors Product specification HF amplifier modules FEATURES • Single 6 V nominal supply voltage • 3 W output power • Easy control of output power by DC voltage • Silicon bipolar technology • Standby current less than 100 µA. APPLICATIONS • Portable communication equipment operating in the 400 to 440 MHz and 430 to 488 MHz frequency ranges respectively. DESCRIPTION The BGY148A and BGY148B are three-stage UHF amplifier modules in a SOT421A package. Each module consists of three NPN silicon planar transistor dies mounted together with matching and bias circuit components on a metallized ceramic substrate. The modules produce an output power of 3 W into a load of 50 Ω with an RF drive power of 10 mW. QUICK REFERENCE DATA RF performance at Tmb = 25 °C. TYPE BGY148A BGY148B MODE OF OPERATION CW CW f (MHz) 400 to 440 430 to 488 VS (V) 6 6 PL (W) ≥3 ≥3 handbook, halfpage BGY148A; BGY148B PINNING - SOT421A PIN 1 2 3 4 Flange RF input VC VS RF output ground DESCRIPTION 1 Top view 2 3 4 MSA483 Fig.1 Simplified outline (SOT421A). Gp (dB) ≥24.8 ≥24.8 η (%) typ. 53 typ. 53 ZS; ZL (Ω) 50 50 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VS VC PD PL Tstg Tmb Note 1. In order to control the mounting-base temperature, proper heatsinking of the underside of the device is required. It is therefore advisable that the device is mounted on a printed-circuit board with metallized through holes. DC supply voltage DC control voltage input drive power load power storage temperature operating mounting-base temperature; note1 PARAMETER − − − − −40 −30 MIN. 4 20 3.5 +100 +100 MAX. 8.5 V V mW W °C °C UNIT 1998 May 13 2 Philips Semiconductors Product specification HF amplifier modules BGY148A; BGY148B CHARACTERISTICS ZS = ZL = 50 Ω; PD = 10 mW; VS = 6 V; VC ≤ 3.5 V; Tmb = 25 °C; unless otherwise specified. SYMBOL f PARAMETER frequency range BGY148A BGY148B IQ IC PL Gp η H2 H3 VSWRin total quiescent current control current load power power gain efficiency second harmonic third harmonic input VSWR control range stability adjust VC for PL = 3 W adjust VC for PL = 3 W adjust VC for PL = 3 W adjust VC for PL = 3 W adjust VC for PL = 3 W VC = 0 to 3.5 V PD = 5 to 20 mW; VS = 5 to 8.5 V; PL ≤ 3.5 W; VSWR ≤ 4 : 1 through all phases VS = 8.5 V; adjust VC for PL = 3.5 W; VSWR ≤ 4 : 1 through all phases VC = 0; PD = 0 adjust VC for PL = 3 W 400 430 − − 3 24.8 46 − − − 10 − − − − − − − 53 − − − − − 440 488 100 500 − − − −38 −38 3:1 − −60 dB dBc MHz MHz µA µA W dB % dBc dBc CONDITIONS MIN. TYP. MAX. UNIT ruggedness no degradation handbook, halfpage 5 MDA207 PL (W) 4 VSWR = 1:1 3 VSWR = 3:1 2 1 0 0 20 40 60 80 100 Tmb (oC) VS = 8.5 V. Fig.2 Load power derating curves. 1998 May 13 3 Philips Semiconductors Product specification HF amplifier modules BGY148A; BGY148B MGD553 handbook, halfpage 5 handbook, halfpage 60 MGD554 PL (W) 4 400 MHz 440 MHz η (%) 440 MHz 400 MHz 40 3 2 20 1 0 0 1 2 3 VC (V) 4 0 0 1 2 3 PL (W) 4 ZS = ZL = 50 Ω; PD = 10 mW; VS = 6 V; Tmb = 25 °C. ZS = ZL = 50 Ω; PD = 10 mW; VS = 6 V; Tmb = 25 °C. Fig.3 Load power as a function of control voltage; BGY148A; typical values. Fig.4 Efficiency as a function of load power; BGY148A; typical values. MGD555 handbook, halfpage 5 handbook, halfpage 60 MGD556 PL (W) 4 η (%) 40 3 2 20 1 0 380 400 420 440 f (MHz) 460 0 380 400 420 440 f (MHz) 460 ZS = ZL = 50 Ω; PD = 10 mW; VS = 6 V; VC = 3.5 V; Tmb = 25 °C. ZS = ZL = 50 Ω; PD = 10 mW; VS = 6 V; PL = 3 W; Tmb = 25 °C. Fig.5 Load power as a function of frequency; BGY148A; typical values. Fig.6 Efficiency as a function of frequency; BGY148A; typical values. 1998 May 13 4 Philips Semiconductors Product specification HF amplifier modules BGY148A; BGY148B 4 handbook, halfpage MGD557 3.0 VSWRin 2.5 −30 H2, H3 (dBc) −40 MGD558 VC (V) 3 VSWRin 2 VC −50 1 1.5 2.0 H3 H2 0 380 400 420 440 f (MHz) 1.0 460 −60 380 400 420 440 f (MHz) 460 ZS = ZL = 50 Ω; PD = 10 mW; VS = 6 V; PL = 3 W; Tmb = 25 °C. ZS = ZL = 50 Ω; PD = 2 mW; VS = 4.8 V; PL = 3 W; Tmb = 25 °C. Fig.7 Control voltage and input VSWR as functions of frequency; BGY148A; typical values. Fig.8 Harmonics as a function of frequency; BGY148A; typical values. handbook, halfpage 5 MDA206 PL (W) 4 400 MHz 440 MHz 3 2 1 0 −25 0 25 50 75 100 Tmb (oC) ZS = ZL = 50 Ω; PD = 2 mW; VS = 4.8 V; Tmb = 25 °C. Fig.9 Load power as a function of mounting base temperature; BGY148A; typical values. 1998 May 13 5 Philips Semiconductors Product specification HF amplifier modules BGY148A; BGY148B MGD559 handbook, halfpage 5 handbook, halfpage 60 MGD560 PL (W) 4 430 MHz η (%) 430 MHz 488 MHz 488 MHz 3 40 2 20 1 0 0 1 2 3 VC (V) 4 0 0 1 2 3 PL (W) 4 ZS = ZL = 50 Ω; PD = 10 mW; VS = 6 V; Tmb = 25 °C. ZS = ZL = 50 Ω; PD = 10 mW; VS = 6 V; Tmb = 25 °C. Fig.10 Load power as a function of control voltage; BGY148B; typical values. Fig.11 Efficiency as a function of load power; BGY148B; typical values. MGD561 handbook, halfpage 5 handbook, halfpage 60 MGD562 PL (W) 4 η (%) 40 3 2 20 1 0 420 440 460 480 f (MHz) 500 0 420 440 460 480 f (MHz) 500 ZS = ZL = 50 Ω; PD = 10 mW; VS = 6 V; VC = 3.5 V; Tmb = 25 °C. ZS = ZL = 50 Ω; PD = 10 mW; VS = 6 V; PL = 3 W; Tmb = 25 °C. Fig.12 Load power as a function of frequency; BGY148B; typical values. Fig.13 Efficiency as a function of frequency; BGY148B; typical values. 1998 May 13 6 Philips Semiconductors Product specification HF amplifier modules BGY148A; BGY148B 4 handbook, halfpage MGD563 3.0 VSWRin 2.5 −30 H2, H3 (dBc) −40 MGD564 VC (V) 3 2 VC VSWRin H2 2.0 −50 H3 1.5 −60 1 0 420 440 460 480 f (MHz) 1.0 500 −70 420 440 460 480 f (MHz) 500 ZS = ZL = 50 Ω; PD = 10 mW; VS = 6 V; PL = 3 W; Tmb = 25 °C. ZS = ZL = 50 Ω; PD = 2 mW; VS = 4.8 V; PL = 3 W; Tmb = 25 °C. Fig.14 Control voltage and input VSWR as functions of frequency; BGY148B; typical values. Fig.15 Harmonics as a function of frequency; BGY148B; typical values. handbook, halfpage 5 MDA205 PL (W) 4 430 MHz 3 488 MHz 2 1 0 −25 0 25 50 75 100 Tmb (oC) ZS = ZL = 50 Ω; PD = 2 mW; VS = 4.8 V; Tmb = 25 °C. Fig.16 Load power as a function of mounting base temperature; BGY148B; typical values. 1998 May 13 7 Philips Semiconductors Product specification HF amplifier modules SOLDERING The indicated temperatures are those at the solder interfaces. Advised solder types are types with a liquidus less than or equal to 210 °C. Solder dots or solder prints must be large enough to wet the contact areas. Soldering can be carried out using a conveyor oven, a hot air oven, an infrared oven or a combination of these ovens. A double reflow process is permitted. Hand soldering must be avoided because the soldering iron tip can exceed the maximum permitted temperature of 250 °C and damage the module. The maximum allowed temperature is 250 °C for 5 seconds. The maximum ramp-up is 10 °C per second. The maximum cool-down is 5 °C per second. Cleaning The following fluids may be used for cleaning: • Alcohol • Bio-Act (Terpene Hydrocarbon) • Acetone. Ultrasonic cleaning should not be used since this can cause serious damage to the product. 0 0 1 300 BGY148A; BGY148B MGM159 handbook, halfpage T (°C) 200 100 2 3 4 t (min) 5 Fig.17 Recommended reflow temperature profile. 1998 May 13 8 Philips Semiconductors Product specification HF amplifier modules BGY148A; BGY148B handbook, full pagewidth 22.6 2 DETAIL 0.8 0.4 1.7 1.5 2 8.45 1 2.9 2.7 1.1 2.4 7.48 15.1 20.18 DETAIL 2.6 0.1 0.5 0.7 MGK391 0.6 2.7 0.1 1.1 footprint metallization solder area. handbook, full pagewidth 21.8 2 0.8 2 2 7.05 1.7 3.2 2 7.08 14.7 1.8 19.78 MGK392 solder area. Dimensions in mm. Fig.18 SOT421A footprint. 1998 May 13 9 Philips Semiconductors Product specification HF amplifier modules PACKAGE OUTLINE Ceramic single-ended flat package; 4 in-line leads BGY148A; BGY148B SOT421A U D A y Z E U1 L Q 1 2 3 b d e e1 e 4 wM c 0 5 scale 10 mm DIMENSIONS (mm are the original dimensions) UNIT mm A 3.0 2.6 b 0.56 0.46 c 0.30 0.20 D 22.1 21.7 d 2.4 2.0 E 13.4 13.0 e 5.08 e1 7.62 L 0.7 0.3 Q 3.4 3.0 U 22.4 22.0 U1 8.2 7.8 w 0.25 y 0.15 Z 0.25 0.05 OUTLINE VERSION SOT421A REFERENCES IEC JEDEC EIAJ EUROPEAN PROJECTION ISSUE DATE 97-06-20 1998 May 13 10 Philips Semiconductors Product specification HF amplifier modules DEFINITIONS Data sheet status Objective specification Preliminary specification Product specification Limiting values BGY148A; BGY148B This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications. Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. 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