BLW80

DISCRETE SEMICONDUCTORS DATA SHEET BLW80 UHF power transistor Product specification March 1993 Philips Semiconductors Product specification UHF power transistor DESCRIPTION N-P-N silicon planar epitaxial transistor intended for transmitting applications in class-A, B or C in the u.h.f. and v.h.f. range for nominal supply voltages up to 13,5 V. The resistance stabilization of the transistor provides protection against device damage at severe load mismatch conditions. The transistor is housed in a 1⁄4" capstan envelope with a ceramic cap. BLW80 QUICK REFERENCE DATA R.F. performance up to Th = 25 °C in an unneutralized common-emitter class-circuit. MODE OF OPERATION c.w. c.w. VCE V 12,5 12,5 f MHz 470 175 PL W 4 4 > Gp dB 8,0 > typ. 15,0 η % 60 typ. 60 zi Ω 2,1 + j2,3 2,0 − j2,2 YL mS 57 − j56 51 −j48 PIN CONFIGURATION PINNING - SOT122A. PIN 1 2 DESCRIPTION collector emitter base emitter handbook, halfpage 4 1 3 3 4 2 Top view MBK187 Fig.1 Simplified outline. SOT122A. PRODUCT SAFETY This device incorporates beryllium oxide, the dust of which is toxic. The device is entirely safe provided that the BeO disc is not damaged. March 1993 2 Philips Semiconductors Product specification UHF power transistor RATINGS Limiting values in accordance with the Absolute Maximum System (IEC 134) Collector-emitter voltage (VBE = 0) peak value Collector-emitter voltage (open base) Emitter-base voltage (open collector) Collector current (d.c.) Collector current (peak value); f > 1 MHz Total power dissipation (d.c. and r.f.) up to Tmb = 25 °C Storage temperature Operating junction temperature VCESM VCEO VEBO IC ICM Ptot Tstg Tj max max max max max max BLW80 36 V 17 V 4V 1A 3A 17 W °C 200 °C −65 to +150 max handbook, halfpage 10 MGP938 MGP939 handbook, halfpage 30 IC (A) Prf (W) 20 Tmb = 25 °C r.f. power dissipation VCE ≤ 16.5 V f > 1 MHz short time operation during mismatch 1 Th = 70 °C 10 derate by 0.092 W/K continuous operation 10−1 1 10 VCE (V) 102 0 0 50 Th (°C) 100 Fig.2 D.C. soar. Fig.3 R.F. power dissipation. THERMAL RESISTANCE From junction to mounting base From mounting base to heatsink Rth j-mb Rth mb-h = = 10,3 K/W 0,6 K/W March 1993 3 Philips Semiconductors Product specification UHF power transistor CHARACTERISTICS Tj = 25 °C Breakdown voltages Collector-emitter voltage VBE = 0; IC = 10 mA Collector-emitter voltage open base; IC = 50 mA Emitter-base voltage open collector; IE = 4 mA Collector cut-off current VBE = 0; VCE = 17 V D.C. current gain (1) IC = 0,5 A; VCE = 5 V Collector-emitter saturation voltage (1) IC = 1,5 A; IB = 0,3 A Transition frequency at f = 500 MHz (1) IC = 0,5 A; VCE = 12,5 V IC = 1,5 A; VCE = 12,5 V Collector capacitance at f = 1 MHz IE = Ie = 0; VCB = 12,5 V Feedback capacitance at f = 1 MHz IC = 40 mA; VCE = 12,5 V Collector-stud capacitance Note 1. Measured under pulse conditions: tp ≤ 200 µs; δ ≤ 0,02. Cre Ccs typ typ 7,1 pF 1,2 pF Cc typ 14 pF fT fT typ typ 1,75 GHz 1,25 GHz VCEsat typ 0,75 V hFE > typ 10 35 ICES < 4 mA V(BR)EBO > 4V V(BR)CEO > 17 V V(BR)CES > 36 V BLW80 March 1993 4 Philips Semiconductors Product specification UHF power transistor BLW80 MGP562 handbook, halfpage 40 MGP563 VCE = 5 V typ Tj = 25 °C handbook, halfpage 30 IE = Ie = 0 f = 1 MHz Tj = 25 °C hFE 30 Cc (pF) 20 typ 20 10 10 0 0 1 2 IC (A) 3 0 0 10 VCB (V) 20 Fig.4 Fig.5 handbook, full pagewidth 2 MGP564 fT (GHz) VCE = 12.5 V f = 500 MHz Tj = 25 °C typ 1 0 0 1 2 IC (A) 3 Fig.6 March 1993 5 Philips Semiconductors Product specification UHF power transistor APPLICATION INFORMATION R.F. performance in c.w. operation (unneutralized common-emitter class-B circuit) Th = 25 °C f (MHz) 470 470 175 VCE (V) 12,5 13,5 12,5 PL (W) 4 4 4 PS (W) < 0,63 − − Gp (dB) > typ typ 8,0 9,5 15,0 IC (A) < 0,53 − − η (%) > 60 typ 65 typ 60 zi (Ω) 2,1 + j2,3 − 2,0 − j2,2 BLW80 YL (mS) 57 − j56 − 51 − j48 handbook, full pagewidth C1 L6 C2 50 Ω C3 C4 L1 T.U.T. L5 L2 C5 C6 L3 R1 L4 +VCC MGP565 L7 C8 50 Ω C7 R2 Fig.7 Class-B test circuit at f = 470 MHz. List of components: C1 C2 C3 C4 C5 C6 L1 L2 L3 L5 L6 L7 = = = = = = = = = = = = 2,2 pF (± 0,25 pF) ceramic capacitor C7 = C8 = 1,4 to 5,5 pF film dielectric trimmer (cat. no. 2222 809 09001) 5,6 pF (± 0,25 pF) ceramic capacitor 2 to 9 pF film dielectric trimmer (cat. no. 2222 809 09002) 100 pF ceramic feed-through capacitor 100 nF polyester capacitor stripline (22,5 mm × 6,0 mm) 13 turns closely wound enamelled Cu wire (0,5 mm); int. dia. 4 mm; leads 2 × 5 mm L4 = Ferroxcube wide-band h.f. choke, grade 3B (cat. no. 4312 020 36640) 51 nH; 3,5 turns Cu wire (1 mm); int. dia. 6 mm; coil length 7 mm; leads 2 × 5 mm stripline (10,0 mm × 6,0 mm) 15 nH; 1 turn Cu wire (1 mm); int. dia. 5 mm; leads 2 × 5 mm L1 and L6 are striplines on a double Cu-clad printed-circuit board with PTFE fibre-glass dielectric (εr = 2,74); thickness 1/16". R1 = R2 = 10 Ω (± 5%) carbon resistor Component layout and printed-circuit board for 470 MHz test circuit (Fig.8). March 1993 6 Philips Semiconductors Product specification UHF power transistor BLW80 101 handbook, full pagewidth 58 L3 C3 C1 L2 C2 L1 R1 rivet L7 L6 C8 C4 L5 C5 C7 R2 C6 L4 +VCC MGP566 The circuit and the components are situated on one side of the PTFE fibre-glass board, the other side being fully metallized to serve as earth. Earth connections are made by means of hollow rivets. Fig.8 Component layout and printed-circuit board for 470 MHz test circuit. March 1993 7 Philips Semiconductors Product specification UHF power transistor BLW80 MGP567 handbook, halfpage 10 f = 470 MHz typical values VCC = 12.5 V VCC = 13.5 V handbook, halfpage 15 MGP568 PL (W) Th = 25 °C Gp (dB) 10 f = 470 MHz Th = 25 °C typical values Gp 150 η (%) VCC = 12.5 V VCC = 13.5 V 100 5 70 °C 5 η 50 0 0 1 PS (W) 2 0 0 5 PL (W) 10 0 Fig.9 Fig.10 Conditions for R.F. SOAR f = 470 MHz Th = 70 °C Rth mb-h = 0,6 K/W VCCnom = 12,5 V or 13,5 V PS = PSnom at VCCnom and VSWR = 1 measured in the circuit of Fig.7. The transistor has been developed for use with unstabilized supply voltages. As the output power and drive power increase with the supply voltage, the nominal output power must be derated in accordance with the graph for safe operation at supply voltages other that the nominal. The graph shows the permissible output power under nominal conditions (VSWR = 1), as a function of the expected supply over-voltage ratio, with VSWR as parameter. The graph applies to the situation in which the drive (PS/PSnom) increases linearly with supply over-voltage ratio. MGP569 handbook, halfpage 6.5 PLnom (W) VSWR = 1 6 VSWR = 6 5.5 10 5 1 1.1 50 1.2 PS PSnom VCC VCCnom 1.3 Fig.11 March 1993 8 Philips Semiconductors Product specification UHF power transistor OPERATING NOTE Below 300 MHz a base-emitter resistor of 10 Ω is recommended to avoid oscillation. This resistor must be effective for r.f. only. BLW80 MGP570 handbook, halfpage 20 power gain versus frequency (class-B operation) Gp (dB) 15 10 5 100 Measuring conditions: VCC = 12,5 V PL = 4 W Th = 25 °C typical values 300 f (MHz) 500 Fig.12 MGP571 MGP572 handbook, halfpage 10 ri, xi (Ω) input impedance (series components) versus frequency (class-B operation) handbook, halfpage impedance (parallel components) load 22 −10 CL (pF) −30 RL (Ω) 20 versus frequency (class-B operation) CL 5 ri ri RL xi −50 0 xi 18 −5 100 Measuring conditions: VCC = 12,5 V PL = 4 W Th = 25 °C typical values 300 f (MHz) 500 16 100 Measuring conditions: VCC = 12,5 V PL = 4 W Th = 25 °C typical values 300 f (MHz) −70 500 Fig.13 Fig.14 March 1993 9 Philips Semiconductors Product specification UHF power transistor PACKAGE OUTLINE Studded ceramic package; 4 leads BLW80 SOT122A D ceramic BeO metal c A Q N1 D1 A w1 M A M W N D2 N3 X M1 H b detail X 4 L α 3 H 1 2 0 5 scale 10 mm DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT mm A 5.97 4.74 b 5.85 5.58 c 0.18 0.14 D 7.50 7.23 D1 6.48 6.22 D2 7.24 6.93 H 27.56 25.78 L 9.91 9.14 M1 3.18 2.66 M 1.66 1.39 N 11.82 11.04 N1 max. 1.02 N3 3.86 2.92 Q 3.38 2.74 W 8-32 UNC w1 0.381 α 90° OUTLINE VERSION SOT122A REFERENCES IEC JEDEC EIAJ EUROPEAN PROJECTION ISSUE DATE 97-04-18 March 1993 10 Philips Semiconductors Product specification UHF power transistor DEFINITIONS Data Sheet Status Objective specification Preliminary specification Product specification Limiting values BLW80 This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications. Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. March 1993 11