BSW66A

DISCRETE SEMICONDUCTORS DATA SH EET M3D111 BSW66A; BSW67A; BSW68A NPN switching transistors Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 1997 May 05 Philips Semiconductors Product specification NPN switching transistors FEATURES • High current (max. 1 A) • High voltage (max. 150 V). APPLICATIONS • General purpose switching and amplification • Industrial applications. BSW66A; BSW67A; BSW68A PINNING PIN 1 2 3 emitter base collector, connected to case DESCRIPTION 1 handbook, halfpage 2 3 2 DESCRIPTION NPN transistor in a TO-39 metal package. 3 MAM317 1 Fig.1 Simplified outline (TO-39) and symbol. QUICK REFERENCE DATA SYMBOL VCBO PARAMETER collector-base voltage BSW66A BSW67A BSW68A VCEO collector-emitter voltage BSW66A BSW67A BSW68A IC Ptot hFE fT toff collector current (DC) total power dissipation DC current gain transition frequency turn-off time Tcase ≤ 25 °C IC = 10 mA; VCE = 5 V IC = 500 mA; VCE = 5 V IC = 100 mA; VCE = 20 V; f = 100 MHz ICon = 500 mA; IBon = 50 mA; IBoff = −50 mA open base − − − − − 30 30 − − − − − − − − − 130 900 100 120 150 1 5 − − − − MHz ns V V V A W open emitter − − − − − − 100 120 150 V V V CONDITIONS MIN. TYP. MAX. UNIT 1997 May 05 2 Philips Semiconductors Product specification NPN switching transistors LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO BSW66A BSW67A BSW68A VCEO collector-emitter voltage BSW66A BSW67A BSW68A VEBO IC ICM IBM Ptot Tstg Tj Tamb emitter-base voltage collector current (DC) peak collector current peak base current total power dissipation storage temperature junction temperature operating ambient temperature Tamb ≤ 25 °C Tcase ≤ 25 °C tp ≤ 20 ms open collector open base PARAMETER collector-base voltage BSW66A; BSW67A; BSW68A CONDITIONS open emitter − − − − − − − − − − − − MIN. MAX. 100 120 150 100 120 150 6 1 2 200 800 5 +150 200 +150 V V V V V V V A A UNIT mA mW W °C °C °C −65 − −65 THERMAL CHARACTERISTICS SYMBOL Rth j-a Rth j-c PARAMETER thermal resistance from junction to ambient thermal resistance from junction to case CONDITIONS free air VALUE 220 35 UNIT K/W K/W 1997 May 05 3 Philips Semiconductors Product specification NPN switching transistors CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL ICBO PARAMETER collector cut-off current BSW66A IE = 0; VCB = 50 V BSW66A; BSW67A; BSW68A CONDITIONS MIN. − − − − − − − − − − − 30 40 30 10 − − − − − − − − TYP. − − − − − − − − − − − − − − − − − − − − − − − 130 MAX. UNIT 100 50 100 100 50 100 100 50 100 100 100 − − − − 150 400 1 900 1.1 1.4 20 300 − − − mV mV V mV V V pF pF MHz nA µA µA nA µA µA nA µA µA nA µA IE = 0; VCB = 50 V; Tj = 150 °C IE = 0; VCB = 100 V ICBO collector cut-off current BSW67A IE = 0; VCB = 60 V IE = 0; VCB = 60 V; Tj = 150 °C IE = 0; VCB = 120 V ICBO collector cut-off current BSW68A IE = 0; VCB = 75 V IE = 0; VCB = 75 V; Tj = 150 °C IE = 0; VCB = 150 V IEBO hFE emitter cut-off current DC current gain IC = 0; VEB = 3 V IC = 0; VEB = 6 V VCE = 5 V IC = 10 mA IC = 100 mA IC = 500 mA IC = 1 A VCEsat collector-emitter saturation voltage IC = 100 mA; IB = 10 mA IC = 500 mA; IB = 50 mA IC = 1 A; IB = 150 mA VBEsat base-emitter saturation voltage IC = 100 mA; IB = 10 mA IC = 500 mA; IB = 50 mA IC = 1 A; IB = 150 mA Cc Ce fT ton toff collector capacitance emitter capacitance transition frequency IE = ie = 0; VCB = 10 V; f = 1 MHz IC = ic = 0; VEB = 0; f = 1 MHz IC = 100 mA; VCE = 20 V; f = 100 MHz − ICon = 500 mA; IBon = 50 mA; IBoff = −50 mA − − Switching times (between 10% and 90% levels) turn-on time turn-off time 500 900 ns ns 1997 May 05 4 Philips Semiconductors Product specification NPN switching transistors PACKAGE OUTLINE Metal-can cylindrical single-ended package; 3 leads BSW66A; BSW67A; BSW68A SOT5/11 j B α seating plane wM AMBM 1 b k 2 3 D1 a A D A L 0 5 scale 10 mm DIMENSIONS (mm are the original dimensions) UNIT mm A 6.60 6.35 a 5.08 b D D1 j k L 14.2 12.7 w 0.2 α 45° 0.48 9.39 8.33 0.85 0.95 0.41 9.08 8.18 0.75 0.75 OUTLINE VERSION SOT5/11 REFERENCES IEC JEDEC TO-39 EIAJ EUROPEAN PROJECTION ISSUE DATE 97-04-11 1997 May 05 5 Philips Semiconductors Product specification NPN switching transistors DEFINITIONS Data sheet status Objective specification Preliminary specification Product specification Limiting values BSW66A; BSW67A; BSW68A This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications. Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. 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