BYV74F

Philips Semiconductors Product specification Dual rectifier diodes ultrafast FEATURES • Low forward volt drop • Fast switching • Soft recovery characteristic • High thermal cycling performance • Isolated mounting tab BYV74F series SYMBOL QUICK REFERENCE DATA VR = 300 V/ 400 V/ 500 V a1 1 k2 a2 3 VF ≤ 1.12 V IO(AV) = 20 A trr ≤ 60 ns SOT199 GENERAL DESCRIPTION Dual, common cathode, ultra-fast, epitaxial rectifier diodes intended for use as output rectifiers in high frequency switched mode power supplies. The BYV74F series is supplied in the conventional leaded SOT199 package. PINNING PIN 1 2 3 tab DESCRIPTION anode 1 cathode anode 2 isolated case 1 2 3 LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134). SYMBOL VRRM VRWM VR IO(AV) IFRM IFSM PARAMETER Peak repetitive reverse voltage Crest working reverse voltage Continuous reverse voltage Average rectified output current (both diodes conducting)1 Repetitive peak forward current per diode Non-repetitive peak forward current per diode. Storage temperature Operating junction temperature CONDITIONS BYV74F Tmb ≤ 117˚C square wave; δ = 0.5; Ths ≤ 54 ˚C t = 25 µs; δ = 0.5; Ths ≤ 54 ˚C t = 10 ms t = 8.3 ms sinusoidal; with reapplied VRRM(max) -40 MIN. -300 300 300 300 MAX. -400 400 400 400 20 30 150 160 150 150 -500 500 500 500 UNIT V V V A A A A ˚C ˚C Tstg Tj ISOLATION LIMITING VALUE & CHARACTERISTIC Ths = 25 ˚C unless otherwise specified SYMBOL Visol PARAMETER Repetitive peak voltage from all three terminals to external heatsink CONDITIONS R.H. ≤ 65 % ; clean and dustfree MIN. TYP. MAX. 2500 UNIT V Cisol Capacitance from T2 to external f = 1 MHz heatsink - 22 - pF 1 Neglecting switching and reverse current losses. September 1998 1 Rev 1.300 Philips Semiconductors Product specification Dual rectifier diodes ultrafast THERMAL RESISTANCES SYMBOL Rth j-hs PARAMETER Thermal resistance junction to heatsink CONDITIONS both diodes conducting with heatsink compound without heatsink compound per diode with heatsink compound without heatsink compound in free air. MIN. - BYV74F series TYP. 35 MAX. 4.0 8.0 5.0 9.0 - UNIT K/W K/W K/W K/W K/W Rth j-a Thermal resistance junction to ambient ELECTRICAL CHARACTERISTICS characteristics are per diode at Tj = 25 ˚C unless otherwise stated SYMBOL VF IR Qs trr Irrm Vfr PARAMETER Forward voltage Reverse current Reverse recovery charge Reverse recovery time Peak reverse recovery current Forward recovery voltage CONDITIONS IF = 15 A; Tj = 150˚C IF = 15 A IF = 30 A VR = VRRM VR = VRRM; Tj = 100 ˚C IF = 2 A to VR ≥ 30 V; dIF/dt = 20 A/µs IF = 1 A to VR ≥ 30 V; dIF/dt = 100 A/µs IF = 10 A to VR ≥ 30 V; dIF/dt = 50 A/µs; Tj = 100˚C IF = 10 A; dIF/dt = 10 A/µs MIN. TYP. 0.95 1.08 1.15 10 0.3 40 50 4.2 2.5 MAX. 1.12 1.25 1.36 50 0.8 60 60 5.2 UNIT V V V µA mA nC ns A V September 1998 2 Rev 1.300 Philips Semiconductors Product specification Dual rectifier diodes ultrafast BYV74F series I dI F dt F 20 PF / W Vo = 0.89 Rs = 0.0137 BYV44 Ths(max) / C a = 1.57 1.9 2.2 50 t 15 75 rr time 10 4 2.8 100 Q I R I s 10% 100% 5 125 rrm 0 0 5 IF(AV) / A 10 150 15 Fig.1. Definition of trr, Qs and Irrm Fig.4. Maximum forward dissipation PF = f(IF(AV)) per diode; sinusoidal current waveform where a = form factor = IF(RMS) / IF(AV). trr / ns I F 1000 IF=20 A 100 time VF V VF time fr 1 1 10 Tj = 25 C Tj = 100 C 1A 10 dIF/dt (A/us) 100 Fig.2. Definition of Vfr Fig.5. Maximum trr at Tj = 25˚C and 100˚C; per diode 30 25 20 15 PF / W Vo = 0.8900 V Rs = 0.0137 Ohms BYV44 Ths(max) / C 10 Irrm / A D = 1.0 0.5 0.2 0.1 25 IF= 20 A 50 75 tp T t 1 IF=1A 10 5 I tp D= 100 125 0.1 Tj = 25 C Tj = 100 C 0.01 1 10 -dIF/dt (A/us) 100 T 0 0 5 10 15 IF(AV) / A 20 150 25 Fig.3. Maximum forward dissipation PF = f(IF(AV)) per diode; square wave where IF(AV) =IF(RMS) x √D. Fig.6. Maximum Irrm at Tj = 25˚C and 100˚C; per diode. September 1998 3 Rev 1.300 Philips Semiconductors Product specification Dual rectifier diodes ultrafast BYV74F series 50 IF / A Tj = 25 C Tj = 150 C BYV74 10 Transient thermal impedance, Zth j-hs (K/W) 40 1 30 typ 20 max 0.1 0.01 10 P D tp D= tp T t 0 0 0.5 1 VF / V 1.5 2 0.001 1us T 10us 100us 1ms 10ms 100ms 1s 10s pulse width, tp (s) BYV42F/EX Fig.7. Typical and maximum forward characteristic IF = f(VF); parameter Tj Fig.9. Transient thermal impedance per diode Zth j-hs= f(tp) 1000 Qs / nC IF = 20 A 100 2A 10 1 1.0 10 -dIF/dt (A/us) 100 Fig.8. Maximum Qs at Tj = 25˚C; per diode September 1998 4 Rev 1.300 Philips Semiconductors Product specification Dual rectifier diodes ultrafast MECHANICAL DATA Dimensions in mm Net Mass: 5.5 g BYV74F series 15.3 max 0.7 7.3 3.1 3.3 6.2 5.8 21.5 max 3.2 5.2 max o 45 seating plane 3.5 3.5 max not tinned 15.7 min 1 2.1 max 2 3 1.2 1.0 5.45 0.7 max 0.4 M 2.0 5.45 Fig.10. SOT199; The seating plane is electrically isolated from all terminals. Notes 1. Refer to mounting instructions for F-pack envelopes. 2. Epoxy meets UL94 V0 at 1/8". September 1998 5 Rev 1.300 Philips Semiconductors Product specification Dual rectifier diodes ultrafast DEFINITIONS Data sheet status Objective specification Product specification Limiting values BYV74F series This data sheet contains target or goal specifications for product development. This data sheet contains final product specifications. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. © Philips Electronics N.V. 1998 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. September 1998 6 Rev 1.300