LXE18300X

DISCRETE SEMICONDUCTORS DATA SH EET LXE18300X NPN microwave power transistor Product specification Supersedes data of January 1992 File under Discrete Semiconductors, SC15 1997 Feb 18 Philips Semiconductors Product specification NPN microwave power transistor FEATURES • Internal input and output prematching ensures a good stability and allows an easier design of wideband circuits • Diffused emitter ballasting resistors provide excellent current sharing and withstanding at a high VSWR • Interdigitated structure provides high emitter efficiency • Gold metallization realizes very good stability of the characteristics and excellent lifetime • Multicell geometry gives good balance of dissipated power and low thermal resistance. APPLICATIONS Intended for use in common emitter class AB power amplifiers for military and professional applications at frequencies from 1.6 to 1.85 GHz, in CW conditions. DESCRIPTION NPN silicon planar epitaxial microwave power transistor in a SOT439A metal ceramic flange package with emitter connected to flange. LXE18300X QUICK REFERENCE DATA Microwave performance up to Tmb = 25 °C in a common emitter class AB amplifier. MODE OF OPERATION f (GHz) 24 VCE (V) 0.3 ICQ (A) PL1 (W) ≥27 ≥8 GPO (dB) Class AB (CW) 1.85 PINNING - SOT439A PIN 1 2 3 collector base DESCRIPTION emitter connected to flange ook, 4 columns 1 c b 3 2 Top view 3 e MAM045 Fig.1 Simplified outline and symbol. WARNING Product and environmental safety - toxic materials This product contains beryllium oxide. The product is entirely safe provided that the BeO slab is not damaged. All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of the user. It must never be thrown out with the general or domestic waste. MAINTENANCE TYPE - NOT RECOMMENDED FOR NEW DESIGNS; SEE INDEX SECTION OF SC15 1997 Feb 18 2 Philips Semiconductors Product specification NPN microwave power transistor LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO VCER VCEO VEBO IC Ptot Tstg Tj Tsld Note 1. Up to 0.2 mm from ceramic. PARAMETER collector-base voltage collector-emitter voltage collector-emitter voltage emitter-base voltage collector current total power dissipation storage temperature range operating junction temperature soldering temperature t ≤ 10 s; note 1 Tmb = 75 °C CONDITIONS open emitter RBE = 220 Ω open base open collector − − − − − − −65 − − LXE18300X MIN. MAX. 45 30 20 3 6 57 +200 200 235 UNIT V V V V A W °C °C °C 10 IC (A) MRA433 handbook, halfpage 100 MRA442 Ptot (W) 80 1 60 10−1 (1) 40 20 10−2 1 10 VCE (V) 102 0 0 50 100 150 200 Tmb (oC) Tmb ≤ 75 °C. (1) Region of permissible DC operation. Ptot max = 57 W. Fig.3 Fig.2 DC SOAR. Maximum power dissipation derating as a function of mounting base temperature. MAINTENANCE TYPE - NOT RECOMMENDED FOR NEW DESIGNS; SEE INDEX SECTION OF SC15 1997 Feb 18 3 Philips Semiconductors Product specification NPN microwave power transistor THERMAL CHARACTERISTICS SYMBOL Rth j-mb Rth mb-h Note 1. See “Mounting recommendations in the General part of handbook SC15”. CHARACTERISTICS Tmb = 25 °C unless otherwise specified. SYMBOL ICBO ICER ICEO IEBO hFE PARAMETER collector cut-off current collector cut-off current collector cut-off current emitter cut-off current DC current gain CONDITIONS VCB = 20 V; IE = 0 VCB = 40 V; IE = 0 VCE = 30 V; RBE = 220 Ω VCE = 20 V; IB = 0 VEB = 1.5 V; IC = 0 VCE = 3 V; IC = 3 A PARAMETER from junction to mounting base from mounting base to heatsink note 1 CONDITIONS Tj = 100 °C LXE18300X MAX. 1.7 0.2 UNIT K/W K/W MIN. − − − − − 20 MAX. 3 30 30 30 300 100 UNIT mA mA mA mA µA APPLICATION INFORMATION Microwave performance up to Tmb = 25 °C in a common emitter class AB amplifier. MODE OF OPERATION Class AB (CW) 1.85 f (GHz) 24 VCE (V) 0.3 ICQ (A) PL1 (W) ≥27; typ. 30 GPO (dB) ≥8; typ. 9 MAINTENANCE TYPE - NOT RECOMMENDED FOR NEW DESIGNS; SEE INDEX SECTION OF SC15 1997 Feb 18 4 Philips Semiconductors Product specification NPN microwave power transistor PACKAGE OUTLINE LXE18300X handbook, full pagewidth 12.85 max 0.15 max 3.3 2.9 3 23 max seating plane 3.7 max 1 2.7 min 6 max 1.6 max 3.3 9.85 max 10.3 10.0 2 MBC881 2.7 min 8.25 16.5 Dimensions in mm. Torque on screws: max. 0.4 Nm. Recommended screw: M3. Recommended pitch for mounting screws: 19 mm. Fig.4 SOT439A. MAINTENANCE TYPE - NOT RECOMMENDED FOR NEW DESIGNS; SEE INDEX SECTION OF SC15 1997 Feb 18 5 Philips Semiconductors Product specification NPN microwave power transistor DEFINITIONS Data sheet status Objective specification Preliminary specification Product specification Limiting values LXE18300X This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications. Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. MAINTENANCE TYPE - NOT RECOMMENDED FOR NEW DESIGNS; SEE INDEX SECTION OF SC15 1997 Feb 18 6 Philips Semiconductors Product specification NPN microwave power transistor NOTES LXE18300X 1997 Feb 18 7 Philips Semiconductors – a worldwide company Argentina: see South America Australia: 34 Waterloo Road, NORTH RYDE, NSW 2113, Tel. +61 2 9805 4455, Fax. +61 2 9805 4466 Austria: Computerstr. 6, A-1101 WIEN, P.O. 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