NE5209D

INTEGRATED CIRCUITS NE/SA5209 Wideband variable gain amplifier Product specification RF Communications Handbook 1990 Aug 20 Philips Semiconductors Philips Semiconductors Product specification Wideband variable gain amplifier NE/SA5209 DESCRIPTION The NE5209 represents a breakthrough in monolithic amplifier design featuring several innovations. This unique design has combined the advantages of a high speed bipolar process with the proven Gilbert architecture. The NE5209 is a linear broadband RF amplifier whose gain is controlled by a single DC voltage. The amplifier runs off a single 5 volt supply and consumes only 40mA. The amplifier has high impedance (1kΩ) differential inputs. The output is 50Ω differential. Therefore, the 5209 can simultaneously perform AGC, impedance transformation, and the balun functions. The dynamic range is excellent over a wide range of gain setting. Furthermore, the noise performance degrades at a comparatively slow rate as the gain is reduced. This is an important feature when building linear AGC systems. PIN CONFIGURATION N, D PACKAGES VCC1 GND1 INA GND1 INB GND1 VBG VAGC 1 2 3 4 5 6 7 8 16 15 14 13 12 11 10 9 VCC2 GND2 OUTA GND2 OUTB GND2 GND2 GND2 SR00237 Figure 1. Pin Configuration FEATURES • Gain to 1.5GHz • 850MHz bandwidth • High impedance differential input • 50Ω differential output • Single 5V power supply • 0 - 1V gain control pin • >60dB gain control range at 200MHz • 26dB maximum gain differential • Exceptional VCONTROL / VGAIN linearity • 7dB noise figure minimum • Full ESD protection • Easily cascadable ORDERING INFORMATION DESCRIPTION 16-Pin Plastic Small Outline (SO) package 16-Pin Plastic Dual In-Line Package (DIP) 16-Pin Plastic Small Outline (SO) package 16-Pin Plastic Dual In-Line Package (DIP) APPLICATIONS • Linear AGC systems • Very linear AM modulator • RF balun • Cable TV multi-purpose amplifier • Fiber optic AGC • RADAR • User programmable fixed gain block • Video • Satellite receivers • Cellular communications TEMPERATURE RANGE 0 to +70°C 0 to +70°C -40 to +85°C -40 to +85°C ORDER CODE NE5209D NE5209N SA5209D SA5209N DWG # SOT109-1 SOT28-4 SOT109-1 SOT28-4 1990 Aug 20 2 853-1453 00223 Philips Semiconductors Product specification Wideband variable gain amplifier NE/SA5209 ABSOLUTE MAXIMUM RATINGS SYMBOL VCC PD TJMAX TSTG Supply voltage Power dissipation, TA = 25oC (still air)1 16-Pin Plastic DIP 16-Pin Plastic SO Maximum operating junction temperature Storage temperature range PARAMETER RATING -0.5 to +8.0 1450 1100 150 -65 to +150 UNITS V mW mW °C °C NOTES: 1. Maximum dissipation is determined by the operating ambient temperature and the thermal resistance, θJA: 16-Pin DIP: θJA = 85°C/W 16-Pin SO: θJA = 110°C/W RECOMMENDED OPERATING CONDITIONS SYMBOL VCC TA Supply voltage Operating ambient temperature range NE Grade SA Grade Operating junction temperature range NE Grade SA Grade PARAMETER RATING VCC1 = VCC2 = 4.5 to 7.0V 0 to +70 -40 to +85 0 to +90 -40 to +105 UNITS V °C °C °C °C TJ DC ELECTRICAL CHARACTERISTICS TA = 25oC, VCC1 = VCC2 = +5V, VAGC = 1.0V, unless otherwise specified. LIMITS SYMBOL PARAMETER TEST CONDITIONS CONDITIONS DC tested Over temperature1 DC tested, RL = 10kΩ Over temperature1 DC tested, RL = 10kΩ Over temperature1 DC tested at ±50µA Over temperature1 DC tested at ±1mA Over temperature1 MIN 38 30 17 16 23 22 0.9 0.8 40 35 +20 VOS Output offset voltage (output referred) offset voltage (output referred) Over temperature1 1.6 VIN DC level on inputs level on inputs Over temperature1 1.4 1.9 VOUT DC level on outputs level on outputs Output offset supply rejection ratio (output referred) Bandgap reference voltage gp g Over temperature1 4.5V