PBSS4330X

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D109 PBSS4330X 30 V, 3 A NPN low VCEsat (BISS) transistor Product specification Supersedes data of 2003 Nov 28 2004 Dec 06 Philips Semiconductors Product specification 30 V, 3 A NPN low VCEsat (BISS) transistor FEATURES • SOT89 (SC-62) package • Low collector-emitter saturation voltage VCEsat • High collector current capability: IC and ICM • Higher efficiency leading to less heat generation • Reduced printed-circuit board requirements. APPLICATIONS • Power management – DC/DC converters – Supply line switching – Battery charger – LCD backlighting. • Peripheral drivers – Driver in low supply voltage applications (e.g. lamps and LEDs) – Inductive load driver (e.g. relays, buzzers and motors). QUICK REFERENCE DATA SYMBOL VCEO IC ICM RCEsat PINNING PIN 1 2 3 emitter collector base PARAMETER PBSS4330X MAX. UNIT 30 3 5 100 V A A mΩ collector-emitter voltage collector current (DC) peak collector current equivalent on-resistance DESCRIPTION 2 3 DESCRIPTION NPN low VCEsat transistor in a SOT89 plastic package. 3 2 1 1 sym042 MARKING TYPE NUMBER PBSS4330X Note 1. * = p: Made in Hong Kong. * = t: Made in Malaysia. * = W: Made in China. ORDERING INFORMATION PACKAGE TYPE NUMBER NAME PBSS4330X SC-62 DESCRIPTION plastic surface mounted package; collector pad for good heat transfer; 3 leads VERSION SOT89 MARKING CODE(1) *1R Fig.1 Simplified outline (SOT89) and symbol. 2004 Dec 06 2 Philips Semiconductors Product specification 30 V, 3 A NPN low VCEsat (BISS) transistor LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL VCBO VCEO VEBO IC ICM IB Ptot PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) peak collector current base current (DC) total power dissipation Tamb ≤ 25 °C note 1 note 2 note 3 note 4 Tstg Tj Tamb Notes storage temperature junction temperature ambient temperature − − − − −65 − −65 CONDITIONS open emitter open base open collector note 4 limited by Tj(max) − − − − − − MIN. PBSS4330X MAX. 50 30 6 3 5 0.5 550 1 1.4 1.6 +150 150 +150 V V V A A A UNIT mW W W W °C °C °C 1. Device mounted on a FR4 printed-circuit board; single-sided copper; tin-plated; standard footprint. 2. Device mounted on a FR4 printed-circuit board; single-sided copper; tin-plated; mounting pad for collector 1 cm2. 3. Device mounted on a FR4 printed-circuit board; single-sided copper; tin-plated; mounting pad for collector 6 cm2. 4. Device mounted on a ceramic printed-circuit board 7 cm2, single-sided copper, tin-plated. 2004 Dec 06 3 Philips Semiconductors Product specification 30 V, 3 A NPN low VCEsat (BISS) transistor PBSS4330X handbook, halfpage 2 MLE372 Ptot (W) 1.6 (1) (2) 1.2 (3) 0.8 (4) 0.4 0 0 40 80 120 160 Tamb (°C) (1) Ceramic PCB; 7 cm2 mounting pad for collector. (2) FR4 PCB; 6 cm2 copper mounting pad for collector. (3) FR4 PCB; 1 cm2 copper mounting pad for collector. (4) Standard footprint. Fig.2 Power derating curves. 2004 Dec 06 4 Philips Semiconductors Product specification 30 V, 3 A NPN low VCEsat (BISS) transistor THERMAL CHARACTERISTICS SYMBOL Rth(j-a) PARAMETER thermal resistance from junction to ambient CONDITIONS in free air note 1 note 2 note 3 note 4 Rth(j-s) Notes thermal resistance from junction to soldering point 225 125 90 80 16 VALUE PBSS4330X UNIT K/W K/W K/W K/W K/W 1. Device mounted on a FR4 printed-circuit board; single-sided copper; tin-plated; standard footprint. 2. Device mounted on a FR4 printed-circuit board; single-sided copper; tin-plated; mounting pad for collector 1 cm2. 3. Device mounted on a FR4 printed-circuit board; single-sided copper; tin-plated; mounting pad for collector 6 cm2. 4. Device mounted on a ceramic printed-circuit board 7 cm2, single-sided copper, tin-plated. 103 Zth (K/W) 102 (1) (2) (3) (4) (5) (6) 006aaa243 10 (7) (8) (9) 1 (10) 10−1 10−5 10−4 10−3 10−2 10−1 1 10 102 tp (s) 103 Mounted on FR4 printed-circuit board; standard footprint. (1) δ = 1. (2) δ = 0.75. (3) δ = 0.5. (4) δ = 0.33. (5) δ = 0.2. (6) δ = 0.1. (7) δ = 0.05. (8) δ = 0.02. (9) δ = 0.01. (10) δ = 0. Fig.3 Transient thermal impedance as a function of pulse time; typical values. 2004 Dec 06 5 Philips Semiconductors Product specification 30 V, 3 A NPN low VCEsat (BISS) transistor PBSS4330X 103 Zth (K/W) 102 (1) (2) (3) (5) (6) (4) 006aaa244 10 (7) (8) (9) 1 (10) 10−1 10−5 10−4 10−3 10−2 10−1 1 10 102 tp (s) 103 Mounted on FR4 printed-circuit board; mounting pad for collector 1 cm2. (1) δ = 1. (2) δ = 0.75. (3) δ = 0.5. (4) δ = 0.33. (5) δ = 0.2. (6) δ = 0.1. (7) δ = 0.05. (8) δ = 0.02. (9) δ = 0.01. (10) δ = 0. Fig.4 Transient thermal impedance as a function of pulse time; typical values. 103 Zth (K/W) 102 (1) (2) (3) (5) (4) 006aaa245 10 (6) (7) (8) (9) 1 (10) 10−1 10−5 10−4 10−3 10−2 10−1 1 10 102 tp (s) 103 Mounted on FR4 printed-circuit board; mounting pad for collector 6 cm2. (1) δ = 1. (2) δ = 0.75. (3) δ = 0.5. (4) δ = 0.33. (5) δ = 0.2. (6) δ = 0.1. (7) δ = 0.05. (8) δ = 0.02. (9) δ = 0.01. (10) δ = 0. Fig.5 Transient thermal impedance as a function of pulse time; typical values. 2004 Dec 06 6 Philips Semiconductors Product specification 30 V, 3 A NPN low VCEsat (BISS) transistor CHARACTERISTICS Tamb = 25 °C unless otherwise specified. SYMBOL ICBO ICES IEBO hFE PARAMETER collector-base cut-off current collector-emitter cut-off current emitter-base cut-off current DC current gain CONDITIONS VCB = 30 V; IE = 0 A VCB = 30 V; IE = 0 A; Tj = 150 °C VCE = 30 V; VBE = 0 V VEB = 5 V; IC = 0 A VCE = 2 V IC = 0.1 A IC = 0.5 A IC = 1 A; note 1 IC = 2 A; note 1 IC = 3 A; note 1 VCEsat collector-emitter saturation voltage IC = 0.5 A; IB = 50 mA IC = 1 A; IB = 50 mA IC = 2 A; IB = 100 mA IC = 3 A; IB = 300 mA; note 1 RCEsat VBEsat VBEon fT Cc Note 1. Pulse test: tp ≤ 300 µs; δ ≤ 0.02. equivalent on-resistance base-emitter saturation voltage base-emitter turn-on voltage transition frequency collector capacitance IC = 3 A; IB = 300 mA; note 1 IC = 2 A; IB = 100 mA IC = 3 A; IB = 300 mA; note 1 VCE = 2 V; IC = 1 A IC = 100 mA; VCE = 5 V; f = 100 MHz VCB = 10 V; IE = ie = 0 A; f = 1 MHz 300 300 270 230 180 − − − − − − − 1.0 100 − − − − − − − − − − 80 − − − − − MIN. − − − − PBSS4330X TYP. − − − − MAX. 100 50 100 100 − − 700 − − 60 110 220 300 100 1.1 1.2 − − 30 UNIT nA µA nA nA mV mV mV mV mΩ V V V MHz pF 2004 Dec 06 7 Philips Semiconductors Product specification 30 V, 3 A NPN low VCEsat (BISS) transistor PBSS4330X handbook, halfpage 800 MRC321 handbook, halfpage (1) 1.2 MRC322 hFE 600 VBE (V) 0.8 (1) (2) (2) 400 (3) (3) 0.4 200 0 10−1 1 10 102 103 104 IC (mA) 0 10−1 1 10 102 103 104 IC (mA) VCE = 2 V. (1) Tamb = 100 °C. (2) Tamb = 25 °C. (3) Tamb = −55 °C. VCE = 2 V. (1) Tamb = −55 °C. (2) Tamb = 25 °C. (3) Tamb = 100 °C. Fig.6 DC current gain as a function of collector current; typical values. Fig.7 Base-emitter voltage as a function of collector current; typical values. handbook, halfpage 1 MRC323 handbook, halfpage 1 MRC324 VCEsat (V) 10−1 VCEsat (V) 10−1 (2) (1) (1) (2) 10−2 (3) 10−2 (3) 10−3 10−1 1 10 102 103 104 IC (mA) 10−3 10−1 1 10 102 103 104 IC (mA) IC/IB = 20. (1) Tamb = 100 °C. (2) Tamb = 25 °C. (3) Tamb = −55 °C. Tamb = 25 °C. (1) IC/IB = 100. (2) IC/IB = 50. (3) IC/IB = 10. Fig.8 Collector-emitter saturation voltage as a function of collector current; typical values. Fig.9 Collector-emitter saturation voltage as a function of collector current; typical values. 2004 Dec 06 8 Philips Semiconductors Product specification 30 V, 3 A NPN low VCEsat (BISS) transistor PBSS4330X handbook, halfpage 1.2 MRC325 VBEsat (V) handbook, halfpage 5 MRC326 IC (A) 1.0 (1) 4 (1) (2) (3) (4) (5) (6) 0.8 (2) (3) 3 (7) (8) 0.6 2 (9) (10) 0.4 1 0.2 10−1 1 10 102 103 104 IC (mA) 0 0 0.4 0.8 1.2 1.6 2.0 VCE (V) (8) IB = 7.5 mA. (9) IB = 5.0 mA. (10) IB = 2.5 mA. IC/IB = 20. (1) Tamb = −55 °C. (2) Tamb = 25 °C. (3) Tamb = 100 °C. Tamb = 25 °C. (1) IB = 25.0 mA. (2) IB = 22.5 mA. (3) IB = 20.0 mA. (4) (5) (6) (7) IB = 17.5 mA. IB = 15.0 mA. IB = 12.5 mA. IB = 10.0 mA. Fig.10 Base-emitter saturation voltage as a function of collector current; typical values. Fig.11 Collector current as a function of collector-emitter voltage; typical values. 102 handbook, halfpage RCEsat (Ω) 10 MRC327 103 handbook, halfpage RCEsat (Ω) 102 MRC328 10 1 (2) (1) 1 (1) (2) (3) 10−1 (3) 10−1 10−2 −1 10 1 10 102 103 104 IC (mA) 10−2 10−1 1 10 102 103 104 IC (mA) IC/IB = 20. (1) Tamb = 100 °C. (2) Tamb = 25 °C. (3) Tamb = −55 °C. Tamb = 25 °C. (1) IC/IB = 10. (2) IC/IB = 5. (3) IC/IB = 1. Fig.12 Equivalent on-resistance as a function of collector current; typical values. Fig.13 Equivalent on-resistance as a function of collector current; typical values. 2004 Dec 06 9 Philips Semiconductors Product specification 30 V, 3 A NPN low VCEsat (BISS) transistor PACKAGE OUTLINE Plastic surface mounted package; collector pad for good heat transfer; 3 leads PBSS4330X SOT89 D B A bp3 E HE Lp 1 2 bp2 wM bp1 e1 e 3 c 0 2 scale 4 mm DIMENSIONS (mm are the original dimensions) UNIT mm A 1.6 1.4 bp1 0.48 0.35 bp2 0.53 0.40 bp3 1.8 1.4 c 0.44 0.23 D 4.6 4.4 E 2.6 2.4 e 3.0 e1 1.5 HE 4.25 3.75 Lp 1.2 0.8 w 0.13 OUTLINE VERSION SOT89 REFERENCES IEC JEDEC TO-243 JEITA SC-62 EUROPEAN PROJECTION ISSUE DATE 99-09-13 04-08-03 2004 Dec 06 10 Philips Semiconductors Product specification 30 V, 3 A NPN low VCEsat (BISS) transistor DATA SHEET STATUS LEVEL I DATA SHEET STATUS(1) Objective data PRODUCT STATUS(2)(3) Development DEFINITION PBSS4330X This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). II Preliminary data Qualification III Product data Production Notes 1. Please consult the most recently issued data sheet before initiating or completing a design. 2. The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. 3. For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status. DEFINITIONS Short-form specification  The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Limiting values definition  Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information  Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. DISCLAIMERS Life support applications  These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Right to make changes  Philips Semiconductors reserves the right to make changes in the products including circuits, standard cells, and/or software described or contained herein in order to improve design and/or performance. When the product is in full production (status ‘Production’), relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no licence or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified. 2004 Dec 06 11 Philips Semiconductors – a worldwide company Contact information For additional information please visit http://www.semiconductors.philips.com. Fax: +31 40 27 24825 For sales offices addresses send e-mail to: sales.addresses@www.semiconductors.philips.com. © Koninklijke Philips Electronics N.V. 2004 SCA76 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands R75/03/pp12 Date of release: 2004 Dec 06 Document order number: 9397 750 13882