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PDTC123YM

PDTC123YM

  • 厂商:

    PHILIPS

  • 封装:

  • 描述:

    PDTC123YM - NPN resistor-equipped transistors; R1 = 2.2 k-ohm, R2 = 10 k-ohm - NXP Semiconductors

  • 数据手册
  • 价格&库存
PDTC123YM 数据手册
PDTC123Y series NPN resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 10 kΩ Rev. 03 — 24 March 2005 Product data sheet 1. Product profile 1.1 General description NPN Resistor-Equipped Transistors (RET) family. Table 1: Product overview Package Philips PDTC123YE PDTC123YK PDTC123YM PDTC123YS [1] PDTC123YT PDTC123YU [1] Type number PNP complement JEITA SC-75 SC-59A SC-101 SC-43A SC-70 JEDEC TO-236 TO-92 TO-236AB PDTA123YE PDTA123YK PDTA123YM PDTA123YS PDTA123YT PDTA123YU SOT416 SOT346 SOT883 SOT54 SOT23 SOT323 Also available in SOT54A and SOT54 variant packages (see Section 2). 1.2 Features s Built-in bias resistors s Simplifies circuit design s Reduces component count s Reduces pick and place costs 1.3 Applications s General-purpose switching and amplification s Inverter and interface circuits s Circuit drivers 1.4 Quick reference data Table 2: Symbol VCEO IO R1 R2/R1 Quick reference data Parameter collector-emitter voltage output current (DC) bias resistor 1 (input) bias resistor ratio Conditions open base Min 1.54 3.6 Typ 2.2 4.5 Max 50 100 2.86 5.5 Unit V mA kΩ Philips Semiconductors PDTC123Y series NPN resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 10 kΩ 2. Pinning information Table 3: Pin SOT54 1 2 3 input (base) output (collector) GND (emitter) R1 2 Pinning Description Simplified outline Symbol 1 2 3 001aab347 1 R2 3 006aaa145 SOT54A 1 2 3 input (base) output (collector) GND (emitter) R1 2 1 2 3 001aab348 1 R2 3 006aaa145 SOT54 variant 1 2 3 input (base) output (collector) GND (emitter) R1 2 1 2 3 001aab447 1 R2 3 006aaa145 SOT23; SOT323; SOT346; SOT416 1 2 3 input (base) GND (emitter) output (collector) 1 2 006aaa144 sym007 3 R1 3 1 R2 2 SOT883 1 2 3 input (base) GND (emitter) output (collector) 1 3 2 Transparent top view 1 R2 R1 3 2 sym007 9397 750 14017 © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Product data sheet Rev. 03 — 24 March 2005 2 of 11 Philips Semiconductors PDTC123Y series NPN resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 10 kΩ 3. Ordering information Table 4: Ordering information Package Name PDTC123YE PDTC123YK PDTC123YM SC-75 SC-59A SC-101 Description plastic surface mounted package; 3 leads plastic surface mounted package; 3 leads leadless ultra small plastic package; 3 solder lands; body 1.0 × 0.6 × 0.5 mm plastic single-ended leaded (through hole) package; 3 leads plastic surface mounted package; 3 leads plastic surface mounted package; 3 leads Version SOT416 SOT346 SOT883 SOT54 SOT23 SOT323 Type number PDTC123YS [1] SC-43A PDTC123YT PDTC123YU [1] SC-70 Also available in SOT54A and SOT54 variant packages (see Section 2 and Section 9). 4. Marking Table 5: Marking codes Marking code [1] 19 31 G7 TC123Y *AL *19 Type number PDTC123YE PDTC123YK PDTC123YM PDTC123YS PDTC123YT PDTC123YU [1] * = -: made in Hong Kong * = p: made in Hong Kong * = t: made in Malaysia * = W: made in China 9397 750 14017 © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Product data sheet Rev. 03 — 24 March 2005 3 of 11 Philips Semiconductors PDTC123Y series NPN resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 10 kΩ 5. Limiting values Table 6: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol VCBO VCEO VEBO VI Parameter collector-base voltage collector-emitter voltage emitter-base voltage input voltage positive negative IO ICM Ptot output current (DC) peak collector current total power dissipation SOT416 SOT346 SOT883 SOT54 SOT23 SOT323 Tstg Tj Tamb [1] [2] [3] Conditions open emitter open base open collector Min - Max 50 50 5 +12 −5 100 100 Unit V V V V V mA mA single pulse; tp ≤ 1ms Tamb ≤ 25 °C [1] [1] [2] [3] [1] [1] [1] - −65 −65 150 250 250 500 250 200 +150 150 +150 mW mW mW mW mW mW °C °C °C storage temperature junction temperature ambient temperature Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint. Reflow soldering is the only recommended soldering method. Device mounted on an FR4 PCB with 60 µm copper strip line, standard footprint. 6. Thermal characteristics Table 7: Symbol Rth(j-a) Thermal characteristics Parameter thermal resistance from junction to ambient SOT416 SOT346 SOT883 SOT54 SOT23 SOT323 [1] [2] [3] 9397 750 14017 Conditions in free air [1] [1] [2] [3] [1] [1] [1] Min Typ Max Unit - - 833 500 500 250 500 625 K/W K/W K/W K/W K/W K/W Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. Reflow soldering is the only recommended soldering method. Device mounted on an FR4 PCB with 60 µm copper strip line, standard footprint. © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Product data sheet Rev. 03 — 24 March 2005 4 of 11 Philips Semiconductors PDTC123Y series NPN resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 10 kΩ 7. Characteristics Table 8: Characteristics Tamb = 25 °C unless otherwise specified. Symbol ICBO ICEO Parameter collector-base cut-off current collector-emitter cut-off current emitter-base cut-off current DC current gain collector-emitter saturation voltage off-state input voltage on-state input voltage bias resistor 1 (input) bias resistor ratio collector capacitance VCB = 10 V; IE = ie = 0 A; f = 1 MHz Conditions VCB = 50 V; IE = 0 A VCE = 30 V; IB = 0 A VCE = 30 V; IB = 0 A; Tj = 150 °C VEB = 5 V; IC = 0 A VCE = 5 V; IC = 5 mA IC =10 mA; IB = 0.5 mA VCE = 5 V; IC = 100 µA VCE = 300 mV; IC = 20 mA Min 35 2.5 1.54 3.6 Typ 0.75 1.15 2.2 4.5 Max 100 1 50 700 150 0.3 2.86 5.5 2 pF mV V V kΩ Unit nA µA µA µA IEBO hFE VCEsat VI(off) VI(on) R1 R2/R1 Cc 9397 750 14017 © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Product data sheet Rev. 03 — 24 March 2005 5 of 11 Philips Semiconductors PDTC123Y series NPN resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 10 kΩ 103 hFE 006aaa095 1 006aaa096 (2) (1) VCEsat (V) 102 (3) 10−1 (1) (2) (3) 10 1 10−1 1 10 IC (mA) 102 10−2 1 10 I C (mA) 102 VCE = 5 V (1) Tamb = 100 °C (2) Tamb = 25 °C (3) Tamb = −40 °C IC/IB = 20 (1) Tamb = 100 °C (2) Tamb = 25 °C (3) Tamb = −40 °C Fig 1. DC current gain as a function of collector current; typical values 10 006aaa097 Fig 2. Collector-emitter saturation voltage as a function of collector current; typical values 10 006aaa098 VI(on) (V) VI(off) (V) 1 (1) (2) (3) 1 (1) (2) (3) 10−1 10−1 1 10 IC (mA) 102 10−1 10−1 1 IC (mA) 10 VCE = 0.3 V (1) Tamb = −40 °C (2) Tamb = 25 °C (3) Tamb = 100 °C VCE = 5 V (1) Tamb = −40 °C (2) Tamb = 25 °C (3) Tamb = 100 °C Fig 3. On-state input voltage as a function of collector current; typical values Fig 4. Off-state input voltage as a function of collector current; typical values 9397 750 14017 © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Product data sheet Rev. 03 — 24 March 2005 6 of 11 Philips Semiconductors PDTC123Y series NPN resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 10 kΩ 8. Package outline 1.8 1.4 3 0.45 0.15 0.95 0.60 3.1 2.7 3 0.6 0.2 1.3 1.0 1.75 0.9 1.45 0.7 3.0 1.7 2.5 1.3 1 2 0.30 0.15 1 0.25 0.10 04-11-04 1 2 0.50 0.35 0.26 0.10 04-11-11 1.9 Dimensions in mm Dimensions in mm Fig 5. Package outline SOT416 (SC-75) 0.62 0.55 0.55 0.47 0.30 0.22 3 Fig 6. Package outline SOT346 (SC-59A/TO-236) 0.50 0.46 4.2 3.6 0.45 0.38 0.65 0.30 0.22 0.20 0.12 0.35 Dimensions in mm 1.02 0.95 4.8 4.4 0.48 0.40 1 2 2.54 3 1.27 2 1 5.2 5.0 03-04-03 Dimensions in mm 14.5 12.7 04-11-16 Fig 7. Package outline SOT883 (SC-101) Fig 8. Package outline SOT54 (SC-43A/TO-92) 0.45 0.38 4.2 3.6 1.27 4.2 3.6 0.45 0.38 0.48 0.40 1 3 max 2.5 max 1 0.48 0.40 2 2.54 3 1.27 4.8 4.4 2 5.08 2.54 3 5.2 5.0 14.5 12.7 04-06-28 5.2 5.0 Dimensions in mm 14.5 12.7 4.8 4.4 Dimensions in mm 05-01-10 Fig 9. Package outline SOT54A 9397 750 14017 Fig 10. Package outline SOT54 variant © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Product data sheet Rev. 03 — 24 March 2005 7 of 11 Philips Semiconductors PDTC123Y series NPN resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 10 kΩ 3.0 2.8 3 1.1 0.9 2.2 1.8 3 0.45 0.15 1.1 0.8 0.45 0.15 2.5 1.4 2.1 1.2 2.2 1.35 2.0 1.15 1 2 1 0.48 0.38 0.15 0.09 04-11-04 Dimensions in mm 2 0.4 0.3 1.3 04-11-04 0.25 0.10 1.9 Dimensions in mm Fig 11. Package outline SOT23 (TO-236AB) Fig 12. Package outline SOT323 (SC-70) 9. Packing information Table 9: Packing methods The indicated -xxx are the last three digits of the 12NC ordering code. [1] Type number PDTC123YE PDTC123YK PDTC123YM PDTC123YS Package SOT416 SOT346 SOT883 SOT54 SOT54A SOT54 variant PDTC123YT PDTC123YU [1] Description 4 mm pitch, 8 mm tape and reel 4 mm pitch, 8 mm tape and reel 2 mm pitch, 8 mm tape and reel bulk, straight leads tape and reel, wide pitch tape ammopack, wide pitch bulk, delta pinning 4 mm pitch, 8 mm tape and reel 4 mm pitch, 8 mm tape and reel Packing quantity 3000 -115 -115 -215 -115 5000 -412 -112 10000 -135 -135 -315 -116 -126 -235 -135 SOT23 SOT323 For further information and the availability of packing methods, see Section 14. 9397 750 14017 © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Product data sheet Rev. 03 — 24 March 2005 8 of 11 Philips Semiconductors PDTC123Y series NPN resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 10 kΩ 10. Revision history Table 10: Revision history Release date 20050324 Data sheet status Product data sheet Change notice Doc. number 9397 750 14017 Supersedes PDTC123YT_2 Document ID PDTC123Y_SER_3 Modifications: • • • • • • The types PDTC123YE, PDTC123YK, PDTC123YM, PDTC123YS and PDTC123YU were added. Table 1 “Product overview” added Table 8 “Characteristics” Vi(on) redefined to VI(on) on-state input voltage Table 8 “Characteristics” Vi(off) redefined to VI(off) off-state input voltage Figure 1, 2, 3 and 4 added Section 9 “Packing information” added Objective data sheet Objective data sheet 9397 750 13208 9397 750 12555 PDTC123YT_1 - PDTC123YT_2 PDTC123YT_1 20040510 20040406 9397 750 14017 © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Product data sheet Rev. 03 — 24 March 2005 9 of 11 Philips Semiconductors PDTC123Y series NPN resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 10 kΩ 11. Data sheet status Level I II Data sheet status [1] Objective data Preliminary data Product status [2] [3] Development Qualification Definition This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). III Product data Production [1] [2] [3] Please consult the most recently issued data sheet before initiating or completing a design. The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status. 12. Definitions Short-form specification — The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Limiting values definition — Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information — Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. 13. Disclaimers Life support — These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Right to make changes — Philips Semiconductors reserves the right to make changes in the products - including circuits, standard cells, and/or software - described or contained herein in order to improve design and/or performance. When the product is in full production (status ‘Production’), relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no license or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified. 14. Contact information For additional information, please visit: http://www.semiconductors.philips.com For sales office addresses, send an email to: sales.addresses@www.semiconductors.philips.com 9397 750 14017 © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Product data sheet Rev. 03 — 24 March 2005 10 of 11 Philips Semiconductors PDTC123Y series NPN resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 10 kΩ 15. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 9 10 11 12 13 14 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description. . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data. . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 Ordering information . . . . . . . . . . . . . . . . . . . . . 3 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 4 Thermal characteristics. . . . . . . . . . . . . . . . . . . 4 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 7 Packing information. . . . . . . . . . . . . . . . . . . . . . 8 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . 9 Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 10 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Contact information . . . . . . . . . . . . . . . . . . . . 10 © Koninklijke Philips Electronics N.V. 2005 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Date of release: 24 March 2005 Document number: 9397 750 14017 Published in The Netherlands
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