BUX84

BUX84 NPN SILICON POWER TRANSISTOR Copyright © 1997, Power Innovations Limited, UK AUGUST 1978 - REVISED MARCH 1997 q q q q 40 W at 25°C Case Temperature 2 A Continuous Collector Current 3 A Peak Collector Current Typical tf = 200 ns at 25°C B C E 1 2 3 TO-220 PACKAGE (TOP VIEW) Pin 2 is in electrical contact with the mounting base. MDTRACA absolute maximum ratings at 25°C case temperature (unless otherwise noted) RATING Collector-base voltage (IE = 0) Collector-emitter voltage (V BE = 0) Collector-emitter voltage (IB = 0) Continuous collector current Peak collector current (see Note 1) Continuous device dissipation at (or below) 25°C case temperature Operating junction temperature range Storage temperature range NOTE 1: This value applies for tp ≤ 2 ms, duty cycle ≤ 2%. SYMBOL VCBO VCES VCEO IC ICM Ptot Tj Tstg VALUE 800 800 400 2 3 40 -65 to +150 -65 to +150 UNIT V V V A A W °C °C PRODUCT INFORMATION Information is current as of publication date. Products conform to specifications in accordance with the terms of Power Innovations standard warranty. Production processing does not necessarily include testing of all parameters. 1 BUX84 NPN SILICON POWER TRANSISTOR AUGUST 1978 - REVISED MARCH 1997 electrical characteristics at 25°C case temperature (unless otherwise noted) PARAMETER V CEO(sus) ICES IEBO hFE VCE(sat) V BE(sat) ft Cob NOTES: 2. 3. 4. 5. Collector-emitter sustaining voltage Collector-emitter cut-off current Emitter cut-off current Forward current transfer ratio Collector-emitter saturation voltage Base-emitter saturation voltage Current gain bandwidth product Output capacitance IC = 0.1 A TEST CONDITIONS L = 25 mH VBE = 0 VBE = 0 IC = 0 IC = 0.1 A IC = 0.3 A IC = IC = 1A 1A (see Notes 3 and 4) (see Notes 3 and 4) (see Notes 3 and 4) 12 f = 0.1 MHz 60 35 0.8 1 1.1 V V MHz pF TC = 125°C (see Note 2) MIN 400 0.2 1 1 TYP MAX UNIT V mA mA VCE = 800 V V CE = 800 V VEB = VCE = IB = IB = IB = VCE = VCB = 5V 5V 0.03 A 0.2 A 0.2 A 10 V 20 V IC = 0.2 A IE = 0 Inductive loop switching measurement. These parameters must be measured using pulse techniques, tp = 300 µs, duty cycle ≤ 2%. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts. To obtain ft the [hFE] response is extrapolated at the rate of -6 dB per octave from f = 1 MHz to the frequency at which [hFE] = 1. thermal characteristics PARAMETER RθJC Junction to case thermal resistance MIN TYP MAX 2.5 UNIT °C/W resistive-load-switching characteristics at 25°C case temperature (unless otherwise noted) PARAMETER ton ts tf tf † TEST CONDITIONS IC = 1 A V CC = 250 V IC = 1 A V CC = 250 V IB(on) = 0.2 A † MIN IB(off) = -0.4 A TYP 0.25 1.8 0.2 MAX 0.5 UNIT µs µs µs Turn on time Storage time Fall time Fall time (see Figures 1 and 2) IB(on) = 0.2 A TC = 95°C IB(off) = -0.4 A 0.4 µs Voltage and current values shown are nominal; exact values vary slightly with transistor parameters. PRODUCT INFORMATION 2 BUX84 NPN SILICON POWER TRANSISTOR AUGUST 1978 - REVISED MARCH 1997 PARAMETER MEASUREMENT INFORMATION +25 V BD135 120 Ω 680 µ F 100 Ω T V1 tp 47 Ω 100 µ F V cc = 250 V TUT 15 Ω V1 100 Ω BD136 82 Ω 680 µ F tp = 20 µ s Duty cycle = 1% V1 = 15 V, Source Impedance = 50 Ω Figure 1. Resistive-Load Switching Test Circuit C IC A - B = td B - C = tr E - F = tf D - E = ts A - C = ton D - F = toff B 90% 90% E 10% 10% F 0% 90% IB D dIB ≥ 2 A/µs dt I B(on) A 10% 0% I B(off) Figure 2. Resistive-Load Switching Waveforms PRODUCT INFORMATION 3 BUX84 NPN SILICON POWER TRANSISTOR AUGUST 1978 - REVISED MARCH 1997 TYPICAL CHARACTERISTICS TYPICAL DC CURRENT GAIN vs COLLECTOR CURRENT 100 TCP741AJ COLLECTOR CUT-OFF CURRENT vs CASE TEMPERATURE 10 TCP741AK ICES - Collector Cut-off Current - µA VCE = 5 V TC = 25°C hFE - Typical DC Current Gain VCE = 800 V VBE = 0 1·0 10 0·1 0·01 1·0 0·1 1·0 IC - Collector Current - A 5·0 0·001 -60 -30 0 30 60 90 120 150 TC - Case Temperature - °C Figure 3. Figure 4. MAXIMUM SAFE OPERATING REGIONS MAXIMUM FORWARD-BIAS SAFE OPERATING AREA 10 SAP770AB IC - Collector Current - A 1·0 0·1 0.01 1·0 10 100 1000 VCE - Collector-Emitter Voltage - V Figure 5. PRODUCT INFORMATION 4 BUX84 NPN SILICON POWER TRANSISTOR AUGUST 1978 - REVISED MARCH 1997 THERMAL INFORMATION THERMAL RESPONSE JUNCTION TO CASE vs POWER PULSE DURATION 1·0 50% TCP741AL ZθJC / Rθ JC - Normalised Transient Thermal Impedance 20% 10% 0·1 5% duty cycle = t1/t2 Read time at end of t1, TJ(max) - TC = P D(peak) · 0·01 10-5 10 -4 10 -3 t1 t2 () Zθ JC RθJC · Rθ JC(max) 100 10-2 10-1 t1 - Power Pulse Duration - s Figure 6. PRODUCT INFORMATION 5 BUX84 NPN SILICON POWER TRANSISTOR AUGUST 1978 - REVISED MARCH 1997 MECHANICAL DATA TO-220 3-pin plastic flange-mount package This single-in-line package consists of a circuit mounted on a lead frame and encapsulated within a plastic compound. The compound will withstand soldering temperature with no deformation, and circuit performance characteristics will remain stable when operated in high humidity conditions. Leads require no additional cleaning or processing when used in soldered assembly. TO220 4,70 4,20 ø 3,96 3,71 10,4 10,0 2,95 2,54 6,6 6,0 15,90 14,55 1,32 1,23 see Note B see Note C 6,1 3,5 0,97 0,61 1 2 3 1,70 1,07 14,1 12,7 2,74 2,34 5,28 4,88 2,90 2,40 0,64 0,41 VERSION 1 V ERSION 2 ALL LINEAR DIMENSIONS IN MILLIMETERS NOTES: A. The centre pin is in electrical contact with the mounting tab. B. Mounting tab corner profile according to package version. C. Typical fixing hole centre stand off height according to package version. Version 1, 18.0 mm. Version 2, 17.6 mm. MDXXBE PRODUCT INFORMATION 6 BUX84 NPN SILICON POWER TRANSISTOR AUGUST 1978 - REVISED MARCH 1997 IMPORTANT NOTICE Power Innovations Limited (PI) reserves the right to make changes to its products or to discontinue any semiconductor product or service without notice, and advises its customers to verify, before placing orders, that the information being relied on is current. PI warrants performance of its semiconductor products to the specifications applicable at the time of sale in accordance with PI's standard warranty. Testing and other quality control techniques are utilized to the extent PI deems necessary to support this warranty. Specific testing of all parameters of each device is not necessarily performed, except as mandated by government requirements. PI accepts no liability for applications assistance, customer product design, software performance, or infringement of patents or services described herein. Nor is any license, either express or implied, granted under any patent right, copyright, design right, or other intellectual property right of PI covering or relating to any combination, machine, or process in which such semiconductor products or services might be or are used. PI SEMICONDUCTOR PRODUCTS ARE NOT DESIGNED, INTENDED, AUTHORIZED, OR WARRANTED TO BE SUITABLE FOR USE IN LIFE-SUPPORT APPLICATIONS, DEVICES OR SYSTEMS. Copyright © 1997, Power Innovations Limited PRODUCT INFORMATION 7