AY08A3

AY08A3-** AY08A4-** Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 16-Pin Multiple Circuit Triac 0.8 Amperes/400-700 Volts 16 9 D C E N∞ Description: A triac is a solid state silicon AC switch which may be gate triggered from an off-state to an on-state for either polarity of applied voltage. Features: 1 8 Planar Passivation SEATING PLANE B A F J G H K M L Surface Mount Type Multiple Circuits in one Package Applications: Electric Fan Air Cleaner Small Motor Control Ordering Information: Example: Select the complete part number from the table below -i.e. AY08A4-14 is a 0.8 Ampere, 4 Circuit, 700V, 16-Pin Multiple Circuit Triac. Number of Circuits 3 4 Voltage (x 50) -8 -12 -14 AY08A3-**: No chip T2 16 T2 T2 T2 T2 T2 T2 T2 9 1 8 T1 G T1 G T1 G T1 G Type AY08A Outline Drawing Dimension A B C D E F Inches 1.8 Max. 0.75± 0.01 0.25± 0.01 0.01 0.3 0.12 Min. Millimeters 4.5 Max. 19.0± 0.2 6.3± 0.15 0.27 +0.07/-0.05 7.62 3.0 Min. Dimension G H J K L M Inches 0.1 Millimeters 2.54 0.5± 0.1 0.51 Min. 3.3 0.06 +0.01/-0 1.5 +0.3/-0.1 0.02 0.04 +0.01/-0 1.0 +0.3/-0.1 0.02 Min. 0.13 1 Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 AY08A3-** AY08A4-** 16-Pin Multiple Circuit Triac 0.8 Amperes/400-700 Volts Absolute Maximum Ratings (for One Chip), Tj = 25°C unless otherwise specified Characteristics Repetitive Peak Off-state Voltage, Gate Open Non-Repetitive Peak Off-state Voltage, Gate Open On-state Current, Tc = 86°C Non-repetitive Peak Surge, One Cycle (60Hz) I2t for Fusing, t = 8.3 msec Peak Gate Power Dissipation, 20 msec Average Gate Power Dissipation Peak Gate Current Peak Gate Voltage Storage Temperature Operating Temperature Symbol VDRM VDSM IT(RMS) ITSM I2t PGM PG(avg) IGM VGM Tstg Tj AY08A*-08 400 500 0.8 8 0.26 1 0.1 0.8 6 -40 to 125 -40 to 125 AY08A*-12 600 720 0.8 8 0.26 1 0.1 0.8 6 -40 to 125 -40 to 125 AY08A*-14 700 840 0.8 8 0.26 1 0.1 0.8 6 -40 to 125 -40 to 125 Units Volts Volts Amperes Amperes A2sec Watts Watts Amperes Volts °C °C Electrical and Thermal Characteristics (for One Chip), Tj = 25°C unless otherwise specified Characteristics Repetitive Off-state Current, Peak Peak On-state Voltage Thermal Resistance Junction to Ambient Gate — Parameters Gate Current to Trigger II Gate Current to Trigger III Gate Voltage to Trigger II Gate Voltage to Trigger III Non-triggering Gate Voltage Critical Rate-of-Rise of Commutating Off-state Voltage IRGTI IRGTIII VRGTI VRGTIII VGD (dv/dt)c Tj = 25°C, VD = 6V RL = 6 , RG = 330 Tj = 25°C, VD = 6V RL = 6 , RG = 330 Tj = 125°C, VD = 1/2 VDRM Tj = 125°C (dv/dt)c = -0.4A/ms, VD = 400V – – – – 0.1 0.5 – – – – – 5.0 5.0 2.0 2.0 – mA mA Volts Volts Volts V/µs Rth(j-a) – – – 120 °C/Watt Symbol IDRM VTM Test Conditions VDRM applied, Tj = 125°C Tc = 25°C, ITM = 1.2A Min. – – Typ. – – Max. 1.0 2.0 Units mA Volts 2