CM300DY-28H

CM300DY-28H Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 Dual IGBTMOD™ H-Series Module 300 Amperes/1400 Volts A B M P - DIA. (4 TYP.) C2E1 E2 C1 E2 C2 R L D C F C1 E1 R G S - M6 THD. (3 TYP) N K K G H .110 TAB Q N K E J N E2 Description: Powerex IGBTMOD™ Modules are designed for use in switching applications. Each module consists of two IGBT Transistors in a half-bridge configuration with each transistor having a reverseconnected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management. Features: □ Low Drive Power □ Low VCE(sat) □ Discrete Super-Fast Recovery (135ns) Free-Wheel Diode □ High Frequency Operation (20-25kHz) □ Isolated Baseplate for Easy Heat Sinking Applications: □ AC Motor Control □ Motion/Servo Control □ UPS □ Welding Power Supplies □ Laser Power Supplies Ordering Information: Example: Select the complete part module number you desire from the table below -i.e. CM300DY-28H is a 1400V (VCES), 300 Ampere Dual IGBTMOD™ Power Module. Type CM Current Rating Amperes 300 VCES Volts (x 50) 28 C2E1 E2 C1 Outline Drawing and Circuit Diagram Dimensions A B C D E F G H J Inches 4.33 3.661± 0.01 3.15 2.441± 0.01 1.18 Max. 1.18 0.98 0.85 0.83 Millimeters 110.0 93.0± 0.25 80.0 62.0± 0.25 30.0 Max. 30.0 25.0 21.5 21.2 Dimensions K L M N P Q R S Inches 0.71 0.59 0.55 0.28 0.26 Dia. 0.33 0.24 M6 Metric Millimeters 18.0 15.0 14.0 7.0 Dia. 6.5 8.5 6.0 M6 C1 E1 C2 289 Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 CM300DY-28H Dual IGBTMOD™ H-Series Module 300 Amperes/1400 Volts Absolute Maximum Ratings, Tj = 25 °C unless otherwise specified Ratings Junction Temperature Storage Temperature Collector-Emitter Voltage (G-E SHORT) Gate-Emitter Voltage Collector Current Peak Collector Current Diode Forward Current Diode Forward Surge Current Power Dissipation Max. Mounting Torque M6 Terminal Screws Max. Mounting Torque M6 Mounting Screws Module Weight (Typical) V Isolation * Pulse width and repetition rate should be such that device junction temperature does not exceed the device rating. Symbol Tj Tstg VCES VGES IC ICM IF IFM Pd – – – VRMS CM300DY-28H –40 to 150 –40 to 125 1400 ± 20 300 600* 300 600* 2100 26 26 500 2500 Units °C °C Volts Volts Amperes Amperes Amperes Amperes Watts in-lb in-lb Grams Volts Static Electrical Characteristics, Tj = 25 °C unless otherwise specified Characteristics Collector-Cutoff Current Gate Leakage Current Gate-Emitter Threshold Voltage Collector-Emitter Saturation Voltage Symbol ICES IGES VGE(th) VCE(sat) QG VFM Test Conditions VCE = VCES, VGE = 0V VGE = VGES, VCE = 0V IC = 30mA, VCE = 10V IC = 300A, VGE = 15V IC = 300A, VGE = 15V, Tj = 150°C Total Gate Charge Diode Forward Voltage VCC = 600V, IC = 300A, VGE = 15V IE = 300A, VGE = 0V Min. – – 5.0 – – – – Typ. – – 6.5 3.1 2.95 1530 – Max. 1.0 0.5 8.0 4.2** – – 3.8 Units mA µA Volts Volts Volts nC Volts ** Pulse width and repetition rate should be such that device junction temperature rise is negligible. Dynamic Electrical Characteristics, Tj = 25 °C unless otherwise specified Characteristics Input Capacitance Output Capacitance Reverse Transfer Capacitance Resistive Load Switching Times Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Symbol Cies Coes Cres td(on) tr td(off) tf trr Qrr IE = 300A, diE/dt = –600A/µs IE = 300A, diE/dt = –600A/µs VCC = 800V, IC = 300A, VGE1 = VGE2 = 15V, RG = 1.0Ω VGE = 0V, VCE = 10V, f = 1MHz Test Conditions Min. – – – – – – – – – Typ. – – – – – – – – 3.0 Max. 60 21 12 250 500 350 500 300 – Units nF nF nF ns ns ns ns ns Diode Reverse Recovery Time Diode Reverse Recovery Charge µC Thermal and Mechanical Characteristics, Tj = 25 °C unless otherwise specified Characteristics Thermal Resistance, Junction to Case Thermal Resistance, Junction to Case Contact Thermal Resistance Symbol Rth(j-c) Rth(j-c) Rth(c-f) Test Conditions Per IGBT Per FWDi Per Module, Thermal Grease Applied Min. – – – Typ. – – – Max. 0.06 0.12 0.035 Units °C/W °C/W °C/W 290 Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 CM300DY-28H Dual IGBTMOD™ H-Series Module 300 Amperes/1400 Volts OUTPUT CHARACTERISTICS (TYPICAL) TRANSFER CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) 600 COLLECTOR CURRENT, IC, (AMPERES) 500 400 300 VGE = 20V 11 480 COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) COLLECTOR CURRENT, IC, (AMPERES) Tj = 25oC 15 13 600 12 VCE = 10V Tj = 25°C Tj = 125°C 5 VGE = 15V Tj = 25°C Tj = 125°C 4 360 3 10 240 2 200 100 7 9 8 120 1 0 0 2 4 6 8 10 COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) 0 0 4 8 12 16 20 GATE-EMITTER VOLTAGE, VGE, (VOLTS) 0 0 120 240 360 480 600 COLLECTOR-CURRENT, IC, (AMPERES) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) CAPACITANCE VS. VCE (TYPICAL) 10 COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) 103 Tj = 25°C EMITTER CURRENT, IE, (AMPERES) CAPACITANCE, Cies, Coes, Cres, (nF) 102 Tj = 25°C Cies 8 IC = 300A IC = 600A 101 Coes 6 102 4 100 Cres 2 IC = 120A VGE = 0V f = 1MHz 0 0 4 8 12 16 20 GATE-EMITTER VOLTAGE, VGE, (VOLTS) 101 1.0 1.5 2.0 2.5 3.0 3.5 4.0 10-1 10-1 100 101 102 EMITTER-COLLECTOR VOLTAGE, VEC, (VOLTS) COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) REVERSE RECOVERY CHARACTERISTICS (TYPICAL) GATE CHARGE, VGE 104 REVERSE RECOVERY TIME, t rr, (ns) 103 VCC = 800V VGE = ±15V RG = 1.0 Tj = 125°C 102 GATE-EMITTER VOLTAGE, VGE, (VOLTS) 20 IC = 300A Irr t rr 16 SWITCHING TIME, (ns) VCC = 600V VCC = 800V 103 td(off) tf td(on) 12 102 101 8 102 tr di/dt = -600A/µsec Tj = 25°C 4 101 101 102 COLLECTOR CURRENT, IC, (AMPERES) 103 101 101 102 EMITTER CURRENT, IE, (AMPERES) 100 103 0 0 400 800 1200 1600 2000 2400 GATE CHARGE, QG, (nC) 291 Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 CM300DY-28H Dual IGBTMOD™ H-Series Module 300 Amperes/1400 Volts NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z th(j-c) Zth = Rth • (NORMALIZED VALUE) 100 Single Pulse TC = 25°C Per Unit Base = R th(j-c) = 0.06°C/W NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z th(j-c) Zth = Rth • (NORMALIZED VALUE) 10-3 101 TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT) 10-2 10-1 100 101 10-3 101 TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (FWDi) 10-2 10-1 100 101 100 Single Pulse TC = 25°C Per Unit Base = R th(j-c) = 0.12°C/W 10-1 10-1 10-1 10-1 10-2 10-2 10-2 10-2 10-3 10-5 TIME, (s) 10-4 10-3 10-3 10-3 10-5 TIME, (s) 10-4 10-3 10-3 292