CM75DU-12H
Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
Dual IGBTMOD™ U-Series Module
75 Amperes/600 Volts
TC Measured Point
E F G E2 A B H J D C
G1 E1 G2 G2
U C1
3-M5 Nuts O P O Q
CM
C2E1
K
2 - Mounting Holes (6.5 Dia.)
V
L M N 0.110 - 0.5 Tab P S
R
T
E2 G2
Description: Powerex IGBTMOD™ Modules are designed for use in switching applications. Each module consists of two IGBT Transistors in a halfbridge configuration with each transistor having a reverse-connected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management. Features: □ Low Drive Power □ Low VCE(sat) □ Discrete Super-Fast Recovery Free-Wheel Diode □ Isolated Baseplate for Easy Heat Sinking Applications: □ AC Motor Control □ Motion/Servo Control □ UPS □ Welding Power Supplies □ Laser Power Supplies Ordering Information: Example: Select the complete module number you desire from the table - i.e. CM75DU-12H is a 600V (VCES), 75 Ampere Dual IGBTMOD™ Power Module.
Type CM Current Rating Amperes 75 VCES Volts (x 50) 12
C2E1
E2
C1
E1 G1
Outline Drawing and Circuit Diagram Dimensions A B C D E F G H J K L Inches 3.7 3.15± 0.01 1.89 0.94 0.28 0.67 0.91 0.91 0.43 0.71 0.16 Millimeters 94.0 80.0± 0.25 48.0 24.0 7.0 17.0 23.0 23.0 11.0 18.0 4.0 Dimensions M N O P Q R S T U V Inches 0.47 0.53 0.1 0.63 0.98 Millimeters 12.0 13.5 2.5 16.0 25.0
1.18 +0.04/-0.02 30.0 +1.0/-0.5 0.3 0.83 0.16 0.51 7.5 21.2 4.0 13.0
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Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 CM75DU-12H Dual IGBTMOD™ U-Series Module 75 Amperes/600 Volts
Absolute Maximum Ratings, Tj = 25 °C unless otherwise specified
Ratings Junction Temperature Storage Temperature Collector-Emitter Voltage (G-E SHORT) Gate-Emitter Voltage (C-E SHORT) Collector Current (Tc = 25°C) Peak Collector Current Emitter Current** (Tc = 25°C) Peak Emitter Current** Maximum Collector Dissipation (Tc = 25°C, Tj ≤ 150°C) Mounting Torque, M5 Main Terminal Mounting Torque, M6 Mounting Weight Isolation Voltage (Main Terminal to Baseplate, AC 1 min.) Symbol Tj Tstg VCES VGES IC ICM IE IEM Pc – – – Viso CM75DU-12H -40 to 150 -40 to 125 600 ± 20 75 150* 75 150* 310 31 40 310 2500 Units °C °C Volts Volts Amperes Amperes Amperes Amperes Watts in-lb in-lb Grams Volts
* Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tj(max) rating. **Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
Static Electrical Characteristics,Tj = 25 °C unless otherwise specified
Characteristics Collector-Cutoff Current Gate Leakage Voltage Gate-Emitter Threshold Voltage Collector-Emitter Saturation Voltage Symbol ICES IGES VGE(th) VCE(sat) QG VEC Test Conditions VCE = VCES, VGE = 0V VGE = VGES, VCE = 0V IC = 7.5mA, VCE = 10V IC = 75A, VGE = 15V, Tj = 25°C IC = 75A, VGE = 15V, Tj = 125°C Total Gate Charge Emitter-Collector Voltage** VCC = 300V, IC = 75A, VGE = 15V IE = 75A, VGE = 0V Min. – – 4.5 – – – – Typ. – – 6 2.4 2.6 150 – Max. 1 0.5 7.5 3.0 – – 2.6 Units mA µA Volts Volts Volts nC Volts
**Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
Dynamic Electrical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics Input Capacitance Output Capacitance Reverse Transfer Capacitance Resistive Load Switch Times Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Symbol Cies Coes Cres td(on) tr td(off) tf trr Qrr VCC = 300V, IC = 75A, VGE1 = VGE2 = 15V, RG = 8.3 , Resistive Load Switching Operation IE = 75A, diE/dt = -150A/µs IE = 75A, diE/dt = -150A/µs VCE = 10V, VGE = 0V Test Conditions Min. – – – – – – – – – Typ. – – – – – – – – 0.18 Max. 6.6 3.6 1 100 250 200 300 160 – Units nf nf nf ns ns ns ns ns µC
Diode Reverse Recovery Time** Diode Reverse Recovery Charge**
**Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
Thermal and Mechanical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics Thermal Resistance, Junction to Case Thermal Resistance, Junction to Case Contact Thermal Resistance Symbol Rth(j-c)Q Rth(j-c)D Rth(c-f) Test Conditions Per IGBT 1/2 Module Per FWDi 1/2 Module Per Module, Thermal Grease Applied Min. – – – Typ. – – 0.035 Max. 0.4 0.9 – Units °C/W °C/W °C/W
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Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 CM75DU-12H Dual IGBTMOD™ U-Series Module 75 Amperes/600 Volts
OUTPUT CHARACTERISTICS (TYPICAL)
TRANSFER CHARACTERISTICS (TYPICAL)
COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL)
150
COLLECTOR CURRENT, IC, (AMPERES)
125 100 75 50 25 0 0
VGE = 20V 12
125 100 75 50 25 0
COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS)
Tj = 25oC
COLLECTOR CURRENT, IC, (AMPERES)
14 15
150
13 VCE = 10V Tj = 25°C Tj = 125°C
5
VGE = 15V Tj = 25°C Tj = 125°C
4 3 2 1
11
10 9 8
0 0 4 8 12 16 20 0 40 80 120 160
GATE-EMITTER VOLTAGE, VGE, (VOLTS) COLLECTOR-CURRENT, IC, (AMPERES)
2
4
6
8
10
COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)
COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL)
FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL)
CAPACITANCE VS. VCE (TYPICAL)
10
COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS)
103
Tj = 25°C
Tj = 25°C
CAPACITANCE, Cies, Coes, Cres, (nF)
EMITTER CURRENT, IE, (AMPERES)
102
VGE = 0V f = 1MHz
8 6 4 2
IC = 30A IC = 75A IC = 150A
101
Cies
102
100
Coes Cres
101
10-1
0 0 4 8 12 16 20
GATE-EMITTER VOLTAGE, VGE, (VOLTS)
100 0.6
1.0
1.4
1.8
2.2
2.6
3.0
10-2 10-1
100
101
102
EMITTER-COLLECTOR VOLTAGE, VEC, (VOLTS)
COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)
HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL)
REVERSE RECOVERY CHARACTERISTICS (TYPICAL) di/dt = -150A/µsec Tj = 25°C
REVERSE RECOVERY CURRENT, Irr, (AMPERES)
GATE CHARGE, VGE
103
REVERSE RECOVERY TIME, trr, (ns)
103
VCC = 300V VGE = ±15V RG = 8.3 Ω Tj = 125°C td(off)
102
20
GATE-EMITTER VOLTAGE, VGE, (VOLTS)
IC = 75A VCC = 200V VCC = 300V
SWITCHING TIME, (ns)
15
tf
102
102
trr
101
10
td(on)
Irr
5
101 100
tr
101
COLLECTOR CURRENT, IC, (AMPERES)
102
101 100
101
102
100 103
0 0 50 100 150 200
GATE CHARGE, QG, (nC)
EMITTER CURRENT, IE, (AMPERES)
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Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 CM75DU-12H Dual IGBTMOD™ U-Series Module 75 Amperes/600 Volts
NORMALIZED TRANSIENT THERMAL IMPEDANCE, Zth(j-c) Zth = Rth • (NORMALIZED VALUE)
10-3 101
10-2
10-1
100
101
NORMALIZED TRANSIENT THERMAL IMPEDANCE, Zth(j-c) Zth = Rth • (NORMALIZED VALUE)
TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT)
TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (FWDi)
10-3 101
10-2
10-1
100
101
100
Single Pulse TC = 25°C Per Unit Base = Rth(j-c) = 0.4°C/W
100
Single Pulse TC = 25°C Per Unit Base = Rth(j-c) = 0.9°C/W
10-1
10-1
10-1
10-1
10-2
10-2
10-2
10-2
10-3 10-5
TIME, (s)
10-4
10-3 10-3
10-3 10-5
TIME, (s)
10-4
10-3 10-3
20 20