CM800HB-66H

MITSUBISHI HVIGBT MODULES CM800HB-66H HIGH POWER SWITCHING USE 2nd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules INSULATED TYPE CM800HB-66H q IC ................................................................... 800A q VCES ....................................................... 3300V q Insulated Type q 1-element in a pack APPLICATION Inverters, Converters, DC choppers, Induction heating, DC to DC converters. OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm 130 114 57±0.25 57±0.25 4 - M8 NUTS C 20 C C C C 124 ±0.25 G E E E CM C E E E G 140 40 CIRCUIT DIAGRAM 3 - M4 NUTS 10.35 10.65 48.8 6 - φ7MOUNTING HOLES 61.5 18 5.2 15 40 38 LABEL HVIGBT MODULES (High Voltage Insulated Gate Bipolar Transistor Modules) Feb. 2000 29.5 28 5 MITSUBISHI HVIGBT MODULES CM800HB-66H 2nd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules HIGH POWER SWITCHING USE INSULATED TYPE MAXIMUM RATINGS (Tj = 25°C) Symbol VCES VGES IC ICM I E (Note 2) I EM (Note 2) P C (Note 3) Tj Tstg Viso — — Item Collector-emitter voltage Gate-emitter voltage Collector current Emitter current Maximum collector dissipation Junction temperature Storage temperature Isolation voltage Mounting torque Mass Conditions VGE = 0V VCE = 0V TC = 25°C Pulse TC = 25°C Pulse TC = 25°C, IGBT part Ratings 3300 ±20 800 1600 800 1600 10400 –40 ~ +150 –40 ~ +125 6000 6.67 ~ 13.00 2.84 ~ 6.00 0.88 ~ 2.00 1.5 Unit V V A A A A W °C °C V N·m N·m N·m kg (Note 1) (Note 1) — — Charged part to base plate, rms, sinusoidal, AC 60Hz 1min. Main terminals screw M8 Mounting screw M6 Auxiliary terminals screw M4 Typical value ELECTRICAL CHARACTERISTICS (Tj = 25°C) Symbol ICES Item Conditions VCE = V CES, V GE = 0V IC = 80mA, VCE = 10V VGE = VGES , VCE = 0V Tj = 25°C IC = 800A, VGE = 15V Tj = 125 °C VCE = 10V VGE = 0V VCC = 1650V, IC = 800A, VGE = 15V VCC = 1650V, IC = 800A VGE1 = VGE2 = 15V RG = 2.5Ω Resistive load switching operation IE = 800A, VGE = 0V IE = 800A, die / dt = –1600A / µs Junction to case, IGBT part Junction to case, FWDi part Case to fin, conductive grease applied Min — 4.5 — — — — — — — — — — — — — — — — — Limits Typ — 6.0 — 3.80 4.00 120 12.0 3.6 5.7 — — — — 2.80 — 270 — — 0.008 Max 10 7.5 0.5 4.94 — — — — — 1.60 2.00 2.50 1.00 3.64 1.40 — 0.012 0.024 — Unit mA V µA V nF nF nF µC µs µs µs µs V µs µC K/W K/W K/W Collector cutoff current Gate-emitter VGE(th) threshold voltage IGES Gate-leakage current Collector-emitter VCE(sat) saturation voltage Cies Input capacitance Coes Output capacitance Cres Reverse transfer capacitance QG Total gate charge td (on) Turn-on delay time tr Turn-on rise time td (off) Turn-off delay time tf Turn-off fall time V EC(Note 2) Emitter-collector voltage t rr (Note 2) Reverse recovery time Q rr (Note 2) Reverse recovery charge Rth(j-c)Q Thermal resistance Rth(j-c)R Rth(c-f) Contact thermal resistance (Note 4) (Note 1) Note 1. 2. 3. 4. Pulse width and repetition rate should be such that the device junction temp. (T j) does not exceed Tjmax rating. IE, VEC, t rr , Qrr & die/dt represent characteristics of the anti-parallel, emitter to collector free-wheel diode. Junction temperature (Tj) should not increase beyond 150° C. Pulse width and repetition rate should be such as to cause negligible temperature rise. HVIGBT MODULES (High Voltage Insulated Gate Bipolar Transistor Modules) Feb. 2000 MITSUBISHI HVIGBT MODULES CM800HB-66H 2nd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules HIGH POWER SWITCHING USE INSULATED TYPE PERFORMANCE CURVES OUTPUT CHARACTERISTICS (TYPICAL) 1600 Tj=25°C VGE=14V TRANSFER CHARACTERISTICS (TYPICAL) 1600 VCE=10V COLLECTOR CURRENT IC (A) 1200 VGE=15V VGE=20V VGE=11V VGE=10V COLLECTOR CURRENT IC (A) VGE=13V VGE=12V 1200 800 VGE=9V 800 400 VGE=8V VGE=7V 400 Tj = 25°C Tj = 125°C 0 0 2 4 6 8 10 0 0 4 8 12 16 20 COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V) GATE-EMITTER VOLTAGE VGE (V) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V) VGE=15V COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V) 8 10 Tj = 25°C 6 8 IC = 1600A 6 IC = 800A 4 4 2 Tj = 25°C Tj = 125°C 2 IC = 320A 0 0 400 800 1200 1600 0 0 4 8 12 16 20 COLLECTOR CURRENT IC (A) GATE-EMITTER VOLTAGE VGE (V) FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) CAPACITANCE VS. VCE (TYPICAL) CAPACITANCE Cies, Coes, Cres (nF) EMITTER CURRENT IE (A) 104 7 5 3 2 103 7 5 3 2 Tj=25°C 103 7 5 3 2 102 7 5 3 2 VGE = 0V, Tj = 25°C Cies, Coes : f = 100kHz : f = 1MHz Cres Cies 102 7 5 3 2 101 101 7 5 3 2 100 Coes Cres 0 1 2 3 4 5 10–1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 COLLECTOR-EMITTER VOLTAGE VCE (V) Feb. 2000 EMITTER-COLLECTOR VOLTAGE VEC (V) MITSUBISHI HVIGBT MODULES CM800HB-66H 2nd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules HIGH POWER SWITCHING USE INSULATED TYPE HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) 5 3 2 100 7 5 3 2 10–1 7 5 REVERSE RECOVERY TIME trr (µs) td(off) td(on) tr tf VCC = 1650V, VGE = ±15V RG = 2.5Ω, Tj = 125°C Inductive load 5 7 102 23 5 7 103 23 5 101 7 5 3 2 100 7 5 Irr 103 7 5 3 2 trr 5 7 102 23 5 7 103 23 5 102 7 5 COLLECTOR CURRENT IC (A) EMITTER CURRENT IE (A) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT part) NORMALIZED TRANSIENT THERMAL IMPEDANCE Zth(j – c) NORMALIZED TRANSIENT THERMAL IMPEDANCE Zth(j – c) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (FWDi part) 101 7 Single Pulse 5 TC = 25°C 3 Rth(j – c) = 0.024°C/W 2 100 7 5 3 2 10–1 7 5 3 2 10–2 10–3 2 3 5 7 10–2 2 3 5 7 10–1 2 3 5 7 100 TIME (s) 101 7 Single Pulse 5 TC = 25°C 3 Rth(j – c) = 0.012°C/W 2 100 7 5 3 2 10–1 7 5 3 2 10–2 10–3 2 3 5 7 10–2 2 3 5 7 10–1 2 3 5 7 100 TIME (s) VGE – GATE CHARGE (TYPICAL) 20 GATE-EMITTER VOLTAGE VGE (V) VCC = 1650V IC = 800A 16 12 8 4 0 0 2000 4000 6000 8000 10000 GATE CHARGE QG (nC) Feb. 2000 REVERSE RECOVERY CURRENT Irr (A) SWITCHING TIMES (µs) REVERSE RECOVERY CHARACTERISTICS OF FREE-WHEEL DIODE (TYPICAL) 5 5 VCC = 1650V, Tj = 125°C 3 Inductive load 3 2 VGE = ±15V, RG = 2.5Ω 2