MITSUBISHI Nch POWER MOSFET
FS2VS-14A
HIGH-SPEED SWITCHING USE
FS2VS-14A
OUTLINE DRAWING
r
1.5MAX.
Dimensions in mm 4.5 1.3
10.5MAX.
1.5MAX. 8.6 ± 0.3 9.8 ± 0.5
3.0 –0.5
+0.3
0 +0.3 –0
1 5 0.8 0.5
qwe wr
2.6 ± 0.4
q
¡VDSS ............................................................................. 700V ¡rDS (ON) (MAX) ........................................................... 9.75Ω ¡ID ......................................................................................... 2A
q GATE w DRAIN e SOURCE r DRAIN e
TO-220S
APPLICATION SMPS, DC-DC Converter, battery charger, power supply of printer, copier, HDD, FDD, TV, VCR, personal computer etc.
MAXIMUM RATINGS
Symbol VDSS VGSS ID IDM PD Tch Tstg —
(Tc = 25°C)
Parameter Drain-source voltage Gate-source voltage Drain current Drain current (Pulsed) Maximum power dissipation Channel temperature Storage temperature Weight VGS = 0V VDS = 0V
Conditions
Ratings 700 ±30 2 6 65 –55 ~ +150 –55 ~ +150 1.2
4.5
Unit V V A A W °C °C g
Feb.1999
Typical value
(1.5)
MITSUBISHI Nch POWER MOSFET
FS2VS-14A
HIGH-SPEED SWITCHING USE
ELECTRICAL CHARACTERISTICS
Symbol V (BR) DSS V (BR) GSS IGSS IDSS VGS (th) rDS (ON) VDS (ON) yfs Ciss Coss Crss td (on) tr td (off) tf VSD Rth (ch-c) Parameter
(Tch = 25°C)
Test conditions ID = 1mA, VGS = 0V IGS = ±100µA, VDS = 0V VGS = ±25V, VDS = 0V VDS = 700V, VGS = 0V ID = 1mA, VDS = 10V ID = 1A, VGS = 10V ID = 1A, VGS = 10V ID = 1A, VDS = 10V VDS = 25V, VGS = 0V, f = 1MHz
Limits Min. 700 ±30 — — 2 — — 0.72 — — — — — — — — — Typ. — — — — 3 7.47 7.47 1.2 270 30 5 10 12 33 21 1.0 — Max. — — ±10 1 4 9.75 9.75 — — — — — — — — 1.5 1.92
Unit V V µA mA V Ω V S pF pF pF ns ns ns ns V °C/W
Drain-source breakdown voltage Gate-source breakdown voltage Gate-source leakage current Drain-source leakage current Gate-source threshold voltage Drain-source on-state resistance Drain-source on-state voltage Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Source-drain voltage Thermal resistance
VDD = 200V, ID = 1A, VGS = 10V, RGEN = RGS = 50Ω IS = 1A, VGS = 0V Channel to case
PERFORMANCE CURVES
POWER DISSIPATION DERATING CURVE 100 POWER DISSIPATION PD (W) DRAIN CURRENT ID (A) MAXIMUM SAFE OPERATING AREA 101 7 5 3 2 100 7 5 3 2 10–1 7 5 3 2
DC TC = 25°C Single Pulse tw = 10ms
80
100ms 1ms 10ms 100ms
60
40
20
0
0
50
100
150
200
10–2 0 10 2 3 5 7 101 2 3 5 7 102 2 3 5 7 103 DRAIN-SOURCE VOLTAGE VDS (V) OUTPUT CHARACTERISTICS (TYPICAL) 2.0
TC = 25°C Pulse Test VGS = 20V 10V
CASE TEMPERATURE TC (°C) OUTPUT CHARACTERISTICS (TYPICAL) 5
PD = 65W TC = 25°C Pulse Test
DRAIN CURRENT ID (A)
4
VGS = 20V 10V
DRAIN CURRENT ID (A)
1.6
5V
3
1.2
2
5V
0.8
4.5V
1
4V
0.4
4V
0
0
10
20
30
40
50
0
0
4
8
12
16
20
DRAIN-SOURCE VOLTAGE VDS (V)
DRAIN-SOURCE VOLTAGE VDS (V)
Feb.1999
MITSUBISHI Nch POWER MOSFET
FS2VS-14A
HIGH-SPEED SWITCHING USE
ON-STATE VOLTAGE VS. GATE-SOURCE VOLTAGE (TYPICAL) 50 DRAIN-SOURCE ON-STATE VOLTAGE VDS (ON) (V)
TC = 25°C Pulse Test
ON-STATE RESISTANCE VS. DRAIN CURRENT (TYPICAL) 20 DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (Ω)
TC = 25°C Pulse Test VGS = 10V
40
ID = 3A
16
20V
30
12
20
2A
8
10
1A
4 0 10–1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 DRAIN CURRENT ID (A)
0
0
4
8
12
16
20
GATE-SOURCE VOLTAGE VGS (V)
TRANSFER CHARACTERISTICS (TYPICAL) 5
TC = 25°C VDS = 50V Pulse Test
FORWARD TRANSFER ADMITTANCE VS.DRAIN CURRENT (TYPICAL) 101 7 5 FORWARD TRANSFER ADMITTANCE yfs (S) 3 2 100 7 5 3 2
125°C 75°C TC = 25°C VDS = 10V Pulse Test
DRAIN CURRENT ID (A)
4
3
2
1
0
0
4
8
12
16
20
10–1 –1 10
23
5 7 100
23
5 7 101
GATE-SOURCE VOLTAGE VGS (V)
DRAIN CURRENT ID (A)
CAPACITANCE VS. DRAIN-SOURCE VOLTAGE (TYPICAL) 103 7 5 3 2 102 7 5 3 2 101 7 5 3 Tch = 25°C 2 f = 1MHZ 100
VGS = 0V
SWITCHING CHARACTERISTICS (TYPICAL) 103 7 5 3 2 102 7 5 3 2 101 7 5 3 2 100 –1 10 2 3 4 5 7 100
Tch = 25°C VDD = 200V VGS = 10V RGEN = RGS = 50Ω
Ciss
SWITCHING TIME (ns)
CAPACITANCE Ciss, Coss, Crss (pF)
td(off) tr tf td(on)
Coss
Crss
2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 2 DRAIN-SOURCE VOLTAGE VDS (V)
2 3 4 5 7 101
DRAIN CURRENT ID (A)
Feb.1999
MITSUBISHI Nch POWER MOSFET
FS2VS-14A
HIGH-SPEED SWITCHING USE
GATE-SOURCE VOLTAGE VS.GATE CHARGE (TYPICAL)
GATE-SOURCE VOLTAGE VGS (V)
SOURCE-DRAIN DIODE FORWARD CHARACTERISTICS (TYPICAL) 10
SOURCE CURRENT IS (A)
VGS = 0V Pulse Test
20
Tch = 25°C ID = 2A VDS = 250V
16
8
12
400V 600V
6
TC = 125°C 75°C 25°C
8
4
4
2
0
0
4
8
12
16
20
0
0
0.8
1.6
2.4
3.2
4.0
GATE CHARGE Qg (nC)
SOURCE-DRAIN VOLTAGE VSD (V)
DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (25°C)
DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (t°C)
ON-STATE RESISTANCE VS. CHANNEL TEMPERATURE (TYPICAL) 101 7 5 3 2 100 7 5 3 2 10–1 –50 0 50 100 150
VGS = 10V ID = 1/2ID Pulse Test
THRESHOLD VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) 5.0
GATE-SOURCE THRESHOLD VOLTAGE VGS (th) (V)
VDS = 10V ID = 1mA
4.0
3.0
2.0
1.0
0
–50
0
50
100
150
CHANNEL TEMPERATURE Tch (°C)
CHANNEL TEMPERATURE Tch (°C)
DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (25°C)
TRANSIENT THERMAL IMPEDANCE Zth (ch – c) (°C/ W)
DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (t°C)
BREAKDOWN VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) 1.4
VGS = 0V ID = 1mA
TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS 101 7 5 3 D = 1.0 2 100 7 0.2 5 0.1 3 2 10–1 7 5 3 2
0.5
1.2
1.0
0.8
0.05 0.02 0.01 Single Pulse
PDM
tw T D= tw T
0.6
0.4
–50
0
50
100
150
10–2 10–4 2 3 5710–3 2 3 5710–22 3 5710–12 3 57 100 2 3 57 101 2 3 57 102 PULSE WIDTH tw (s)
Feb.1999
CHANNEL TEMPERATURE Tch (°C)
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