PP150B120

TENTATIVE Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 PP150B120 POW-R-PAK 150A / 1200V TM H-Bridge IGBT Assembly Description: The Powerex POW-R-PAK is a configurable IGBT based power assembly that may be used as a converter, chopper, half or full bridge, or three phase inverter for motor control, power supply, UPS or other power conversion applications. The power assembly is mounted on a forced aircooled heatsink and features state-of-the-art Powerex F-series trench gate IGBTs with low conduction and switching losses for high efficiency operation. The TM POW-R-PAK includes a low inductance laminated bus structure, optically isolated gate drive interfaces, isolated gate drive power supplies, and a DC-link capacitor bank. The control board provides a simple user interface along with built-in protection features including overvoltage, undervoltage lockout, overcurrent, overtemperature, and short circuit detection. Depending on application characteristics the TM POW-R-PAK is suitable for operation with DC bus voltages up to 800VDC and switching frequencies above 20kHz. Schematic TM Features: High performance IGBT inverter bridge Integrated gate drive with fault monitoring & protection System status / troubleshooting LEDs to verify or monitor proper operation Isolated gate drive power supplies Low inductance laminated bus Output current measurement & feedback Superior short circuit detection & shoot through prevention PP150B120(-) -1- TENTATIVE Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 PP150B120 POW-R-PAK 150A / 1200V TM H-Bridge IGBT Assembly Absolute Maximum Ratings, Tj = 25°C unless otherwise specified General IGBT Junction Temperature Storage Temperature Operating Temperature Voltage Applied to DC terminals Isolation Voltage, AC 1 minute, 60Hz sinusoidal IGBT Inverter Collector Current (TC = 25°C) Peak Collector Current (Tj < 150°C) Emitter Current Peak Emitter Current Maximum Collector Dissipation (Tj < 150°C) Gate Drive Board Unregulated +24V Power Supply Regulated +15V Power Supply PWM Signal Input Voltage Fault Output Supply Voltage Fault Output Current 30 18 20 30 50 Volts Volts Volts Volts mA IC ICM IE IEM Pc 150 300 150 300 520 Amperes Amperes Amperes Amperes Watts Symbol Tj Tstg Top VCC Viso -40 to +150 -40 to +125 -25 to +85 800 2500 Units °C °C °C Volts Volts IGBT Inverter Electrical Characteristics, Tj = 25°C unless otherwise specified Characteristics Collector Cutoff Current Collector – Emitter Saturation Voltage Emitter – Collector Voltage Symbol ICES VCE(sat) VEC td(on) Inductive Load Switching Times tr td(off) tf Diode Reverse Recovery Time Diode Reverse Recovery Charge DC Link Capacitance trr Qrr VCC = 600V IC = 150A VGE = 15V RG = 2.1Ω Test Conditions VCE = VCES, VGE = 0V IC = 150A, Tj = 25°C IC = 150A, Tj = 125°C IE = 150A Min Typ 1.8 1.9 6.0 3300 Max 1 2.4 3.2 150 80 450 300 150 Units mA Volts Volts Volts ns ns ns ns ns µC µF PP150B120(-) -2- TENTATIVE Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 PP150B120 POW-R-PAK 150A / 1200V TM H-Bridge IGBT Assembly Gate Drive Board Electrical Characteristics Characteristics Unregulated +24V Power Supply Regulated +15V Power Supply PWM Input On Threshold PWM Input Off Threshold Output Overcurrent Trip Overtemperature Trip Overvoltage Trip DC Link Voltage Feedback Heatsink Temperature Feedback Output Current Feedback 96 Min 20 14.4 12 Typ 24 15 15 0 225 98 920 See Figure Below See Figure Below See Figure Below 100 2 Max 30 18 Units Volts Volts Volts Volts Amperes °C Volts Volts Volts Volts DC Link Feedback 1000 120 Heatsink Temperature Feedback 400 Output Current Feedback Heatsink Temperature (ºC) DC Link Voltage (Volts) 800 700 600 500 400 300 200 100 0 0 1 2 3 4 5 6 7 8 9 10 Output Current (Amps) 0 1 2 3 4 5 6 7 8 9 10 900 100 80 60 40 20 0 350 300 250 200 150 100 50 0 0 1 2 3 4 5 6 7 8 9 10 Feedback Voltage (Volts) Feedback Voltage (Volts) Feedback Voltage (Volts) Thermal and Mechanical Characteristics Characteristics IGBT Thermal Resistance, Junction to Case FWD Thermal Resistance, Junction to Case Contact Thermal Resistance Heatsink Thermal Resistance Mounting Torque, AC terminals Mounting Torque, DC terminals Mounting Torque, Mounting plate Weight Symbol Rth(j-c)Q Rth(j-c)D Rth(c-f) Rth(f-a) 1500 LFM airflow Test Conditions Per IGBT ½ module Per FWD ½ module 0.020 0.040 75 130 130 21 90 150 150 Min Typ 0.11 Max 0.21 0.24 Units °C/W °C/W °C/W °C/W in-lb in-lb in-lb lb PP150B120(-) -3- TENTATIVE Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 PP150B120 POW-R-PAK 150A / 1200V TM H-Bridge IGBT Assembly Gate Drive Board Interface Signal Definitions Pin 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 Notes: 1. 2. 3. Overtemp1 Not Connected DC Link Voltage 24 VDC input power 2 Signal Name Shield PWM APhase A Error PWM A+ PWM BPhase B Error PWM B+ 1 1 Description Connected to circuit ground 0-15 V signal controlling the duty cycle of A- IGBT Open collector output, external pull-up resistor required LOW = No Error; Floating = Phase A overcurrent or short circuit 0-15 V signal controlling the duty cycle of A+ IGBT 0-15 V signal controlling the duty cycle of B- IGBT Open collector output, external pull-up resistor required LOW = No Error; Floating = Phase B overcurrent or short circuit 0-15 V signal controlling the duty cycle of B+ IGBT Open collector output, external pull-up resistor required LOW = No Error; Floating = heatsink overtemp Analog voltage representation of DC link voltage 20 – 30 VDC input voltage range 20 – 30 VDC input voltage range 14.4 – 18 VDC input voltage range 14.4 – 18 VDC input voltage range Ground reference for 15 and 24 VDC inputs Ground reference for 15 and 24 VDC inputs Analog voltage representation of heatsink temperature Tied to pins 18 and 19 Analog voltage representation of phase A output current Tied to pins 18 and 19 Analog voltage representation of phase B output current 24 VDC input power2 15 VDC input power 15 VDC input power GND GND Heatsink Temperature GND 3 2 2 Iout Phase A GND3 Iout Phase B Open collectors can be pulled up to 30 V max and sink 50mA continuous. Do not connect a 15 VDC and 24 VDC source to the unit at the same time, use one or the other. GND signals to be used for analog feedback signals, i.e. twisted pair with Iout Phase A. Gate Drive Board Interface Connector Description Gate Drive Board Interface Header Recommended Mating Socket Recommended Strain Relief Symbol J1 Type 0.100” x 0.100” latching header, 26 pin 0.100” x 0.100” IDC socket, 26 pin Plastic strain relief Manufacturer 3M# 3429-6002 or equivalent 3M# 3399-7600 or equivalent 3M# 3448-3026 or equivalent PP150B120(-) -4- TENTATIVE Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 PP150B120 POW-R-PAK 150A / 1200V TM H-Bridge IGBT Assembly Performance Curves Effective Output Current vs. Carrier Frequency (Typical) 140 130 IGBT Junction Temperature 120 110 100 90 80 70 60 50 40 40 60 80 100 120 140 160 180 200 220 Iout ARMS 10kHz 5kHz 1kHz Condition Ambient Temperature DC Bus Voltage Load Power Factor IGBT Saturation Voltage IGBT Switching Loss Airflow Switching Conditions Symbol TA VCC cos φ VCE(sat) ESW - Value 40 600 0.8 Typical @ TJ = 125°C Typical @ TJ = 125°C 1500 Units °C Volts Volts mJ LFM 1 phase PWM, 60Hz sinusoidal output PP150B120(-) -5- TENTATIVE Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 PP150B120 POW-R-PAK 150A / 1200V TM H-Bridge IGBT Assembly Mechanical Drawing PP150B120(-) -6-