2SP0430T2A0C-FF1500R17IP5

SCALE-2™ Family 2SP0430T Datasheet Gate Driver for 1.2 kV and 1.7 kV PrimePACK™ 3+ Power Modules Supporting 2-level and 3-level NPC-1 Applications Product Highlights Applications Highly Integrated, Compact Footprint • Traction inverter • Ready-to-use gate driver solution for PrimePACK™ 3+ IGBT • • • • • • power modules with 1200 V and 1700 V blocking voltage Dual channel gate driver Electrical primary-side interface with reinforced isolation Available for 2-level and 3-level NPC-1 applications ±30 A peak output gate current 2 W output power per channel at maximum ambient temperature -40 °C to +85 °C operating ambient temperature Protection and Safety Features • Reinforced insulation between primary and secondary side • Undervoltage lock-out (UVLO) protection for primary-side (low voltage side) and secondary-side (high voltage side) • Short-circuit protection • Dynamic Advanced Active Clamping (DA²C) • Wind and solar power • Industrial drives • Other industrial applications Description The plug-and-play 2SP0430T gate driver family is optimized for operation of 1200 V and 1700 V PrimePACK™ 3+ IGBT power modules in 2-level and 3-level NPC-1 applications. The gate driver features an electrical interface with 15 V logic and built-in DC/DC power supply. Power Integrations’ Dynamic Advanced Active Clamping allows an extended DC-link voltage range in IGBT off-state for up to 60 s in solar and regenerating applications (e.g. traction). • Applied double sided conformal coating Full Safety and Regulatory Compliance • 100% production partial discharge and HIPOT test according to • A version: EN 50178:1997 • B version: IEC 62109:2010 • Clearance and creepage distances requirements between primary and secondary sides according to • A version: IEC 62497-1:2013 and EN 50178:1997 • B version: IEC 62109-1:2010 • Clearance and creepage distances requirements between both secondary sides according to • A version: EN 50178:1997 • B version: IEC 62109-1:2010 A version B version Figure 1. 2SP0430T Versions with Standard (A version, left) and Increased (B version, right) Isolation Test Voltage. www.power.com This Product is Covered by Patents and/or Pending Patent Applications. October 2018 2SP0430T Product Portfolio 2SP0430T Product Power Module Technology Voltage Class Current Class Package Power Module Supplier 2SP0430T2A0C-FF1500R12IE5 Si-IGBT, Si-Diode 1200 V 1500 A PrimePACK™ 3+ Infineon 2SP0430T2B0C-FF1500R12IE5 Si-IGBT, Si-Diode 1200 V 1500 A PrimePACK™ 3+ Infineon 2SP0430T2A0C-FF1800R12IE5 Si-IGBT, Si-Diode 1200 V 1800 A PrimePACK™ 3+ Infineon 2SP0430T2B0C-FF1800R12IE5 Si-IGBT, Si-Diode 1200 V 1800 A PrimePACK™ 3+ Infineon 2SP0430T2A0C-FF1500R17IP5 Si-IGBT, Si-Diode 1700 V 1500 A PrimePACK™ 3+ Infineon 2SP0430T2B0C-FF1500R17IP5 Si-IGBT, Si-Diode 1700 V 1500 A PrimePACK™ 3+ Infineon 2SP0430T2A0C-FF1800R17IP5 Si-IGBT, Si-Diode 1700 V 1800 A PrimePACK™ 3+ Infineon 2SP0430T2B0C-FF1800R17IP5 Si-IGBT, Si-Diode 1700 V 1800 A PrimePACK™ 3+ Infineon Table 1. Portfolio 2SP0430T. Notes: 2 www.power.com 2SP0430T Interface Description Figure 2. Interface. Connector X1 To external system controller (DIC-20 connector). VDC (Pin 1, 3): These pins are the primary-side 15 V supply voltage connection for the integrated DC/DC converter. It is mandatory to use the same supply for VDC and VCC. SO1 (Pin 13): This pin is the status output for channel 1 (low-side switch). IN1 (Pin 15): This pin is the command input for channel 1 (low-side switch). NC (Pins 17, 19): These pins are electrically not connected. VCC (Pin 5, 7): These pins are the primary-side 15 V supply voltage connection for the primary-side electronic. It is mandatory to use the same supply for VDC and VCC. GND (Pin 2, 4, 6, 8, 10, 12, 14, 16, 18, 20): These pins are the connection for the primary-side ground potential. All primary-side signals refer to these pins. SO2 (Pin 9): This pin is the status output for channel 2 (high-side switch). Optical Indicator IN2 (Pin 11): This pin is the command input for channel 2 (high-side switch). P White optical indicator for monitoring the voltage VVCC. During the absence of VVCC the indicator is OFF. 3 www.power.com 2SP0430T 2SP0430T Functional Description of the gate driver. It is mandatory to provide the supply for VDC and VCC from the same source. Under Voltage Monitoring The supply voltages are closely monitored. In case of an under voltage condition (UVLO) a failure signal will be provided on the status output of the gate driver. If the UVLO is present on the primary-side supply VVCC, both status output signals will be set to GND and all gate driver channels will be turned-off synchronously. In case of an UVLO on the secondary-side, the status signal of the respective channel will be set to GND and the corresponding power semiconductor will be turned-off. Inputs (Primary-Side X1) The input logic of IN1 and IN2 is designed to work with 15 V logic levels to provide sufficient signal/noise ratio. Both inputs have positive logic and are edge triggered. Gate driver signals are transferred from the IN1 and IN2 pins to the corresponding gate with a propagation delay of tP(LH) for the turn-on and tP(HL) for the turn-off commands. Outputs (Primary-Side X1) Figure 3. Functional Block Diagram. The 2SP0430T is a dual channel plug-and-play gate driver for PrimePACK™ 3+ power modules. The gate driver is available in different variants, which all provide reinforced isolation for all primary-side signals:  2SP0430T2A0 for PrimePACK™ 3+ power modules. This variant features an isolation rating between primary-side and secondary-side of 5000 VRMS.  2SP0430T2B0 for PrimePACK™ 3+ power modules. This variant features an isolation rating between primary-side and secondary-side of 9100 VRMS. As plug-and-play gate driver the 2SP0430T characteristics match the requirements of the individual power modules. The operation of the channel 1 (low-side switch) and channel 2 (high-side switch) of the gate driver is independent from each other. Any dead time insertion, to avoid synchronous or overlapping switching of the driven power switches, has to be generated in the external system controller. Note: Synchronous or overlapping switching of top and bottom switches within a half-bridge leg may damage or destroy the driven power switche(s) and in conjunction as secondary failure the attached gate driver. Power Supplies The 2SP0430T provides two power supply inputs. For both a typical supply voltage level of 15 V is required. The first input VDC supplies the integrated DC/DC converter, which generates the isolated voltage for the secondary-side gate driver channels. The positive rail of the gate driver channels has the voltage level VVISOx and the negative rail the voltage level VCOMx. Both are referenced to the emitter potential at terminal E1 or E2 of the driven power semiconductor. The second input VCC supplies the primary-side electronic The gate driver provides a status feedback SOx at pins 9 and 13. The status feedback signal stays at VVCC under nofault condition. In case of a fault, e.g. detected shortcircuit of the driven power module or an under voltage lock-out (UVLO) condition on the secondary-side, the status feedback is set to GND potential for a duration of tblk. In case of a primary-side UVLO condition both status feedback signals remain at GND during the UVLO and are extended by tblk. During this time no gate signals will be transmitted to the respective gate driver channel. Screw Terminals The gate driver is mounted on top of the power module and fixed by screws. Details are given in the section Mounting Instruction. Gate Voltage 2SP0430T possesses a voltage regulator for the positive (turnon) rail of the gate voltage. Internal current sources are regulating actively the positive gate-emitter voltage independently of actual load conditions within the maximum specified ratings. Therefore, the on-state gate-emitter voltage of the power semiconductor equals in steady state the positive supply voltage VVISO. The off-state gate-emitter voltage VGE(off) equals in steady state the voltage VCOM. This voltage is load dependent. It has its lowest value under no load conditions and is increasing slightly (i.e. getting less negative) with increasing load. In the event of an under voltage lock-out condition the gate driver changes the control of the positive rail towards control of the negative rail VCOM. By this potential parasitic turn-on events of the power semiconductor are avoided. Short-Circuit Protection The gate driver uses the semiconductor desaturation effect to detect short-circuits. The desaturation is monitored by using a resistor sensing network. The collector-emitter voltage is checked after the response time tres at turn-on to detect a short circuit. If the voltage is higher than the programmed threshold voltage VCE(stat), the driver detects a 4 www.power.com 2SP0430T short-circuit condition. The monitored semiconductor is switched off immediately and a fault signal is transmitted to the primary-side status output SOx (pin 9 and/or pin 13) after a delay tSOx. The fault feedback is automatically reset after the blocking time tblk. The semiconductor is turned-on again as soon as the next positive edge is applied to the respective inputs IN1 or IN2 after the fault status has disappeared. It should be noted that the response time tres is dependent on the DC-link voltage. It remains constant over a wide range of the higher DC-link voltage range and increases at lower DC-link voltages. predefined threshold. The IGBT is then kept in linear operation. Basic active clamping topologies implement a single feedback path from the IGBT’s collector through transient voltage suppressor (TVS) diodes to the IGBT gate. The 2SP0430T gate driver contains Power Integrations’ Dynamic Advanced Active Clamping (DA²C) based on this principle: When active clamping is activated, the turn-off MOSFET of the gate driver is switched off in order to improve the effectiveness of the active clamping and to reduce the losses in the TVS diodes. This feature – called Advanced Active Clamping – is mainly integrated in the secondaryside ASIC of the gate driver. Additional TVS diodes have been added in series to the TVS diodes required to withstand the maximum DC-link voltage under switching operation. These TVS diodes are shortcircuited during the IGBT on state as well as for about 15…20µs after the turn-off command to guarantee efficient active clamping. After this delay, these additional TVS diodes are activated and allow the DC-link voltage to be increased to a higher value during the IGBT off-state. This feature – together with Advanced Active Clamping – is called Dynamic Advanced Active Clamping (DA²C). Note that the time during which the voltage can be applied above the value for switching operation should be limited to short periods (