Title
R eference Design R eport for a Dual Output
17.5 W Pow er Supply Using I nnoSw itch TM EP I N N2904K
Specification
85 VAC – 484 VAC Input;
12 V, 1.25 A and 5 V, 0.5 A Outputs
Application
Embedded Power Supply
Author
Applications Engineering Department
Document
Number
RDR-531
Date
September 7, 2016
Revision
1.3
Summary and Features
• InnoSwitch-EP - industry first AC/DC ICs with isolated, safety rated integrated feedback
• 900 V rated MOSFET
• Built in synchronous rectification for higher efficiency
• All the benefits of secondary side control with the simplicity of primary side regulation
• Insensitive to transformer variation
• Extremely fast transient response independent of load timing
• Meets output cross regulation requirements without linear regulators
• Primary sensed output overvoltage protection (OVP) eliminates optocoupler for fault
protection
• Accurate thermal protection with hysteretic shutdown
• Input voltage monitor with accurate brown-in/brown-out and overvoltage protection
PATENT INFORMATION
The products and applications illustrated herein (including transformer construction and circuits external to the products) may
be covered by one or more U.S. and foreign patents, or potentially by pending U.S. and foreign patent applications assigned
to Power Integrations. A complete list of Power Integrations' patents may be found at www.powerint.com. Power Integrations
grants its customers a license under certain patent rights as set forth at .
Power Integrations
5245 Hellyer Avenue, San Jose, CA 95138 USA.
Tel: +1 408 414 9200 Fax: +1 408 414 9201
www.power.com
RDR-531 17.5 W InnoSwitch-EP Dual Output Supply
12-Jul-16
Table of Contents
1
2
3
4
Introduction .........................................................................................................4
Power Supply Specification ...................................................................................5
Schematic ............................................................................................................6
Circuit Description ................................................................................................7
4.1
Input EMI Filtering .........................................................................................7
4.2
InnoSwitch-EP Primary ...................................................................................7
4.3
InnoSwitch-EP Secondary...............................................................................7
5 PCB Layout ..........................................................................................................9
6 Bill of Materials .................................................................................................. 10
7 Transformer (T1) Specification ............................................................................ 12
7.1
Transformer Electrical Diagram ..................................................................... 12
7.2
Electrical Specifications ................................................................................ 12
7.3
Material List ................................................................................................ 12
7.4
Transformer Build Diagram .......................................................................... 13
8 Common Mode Choke (L1) Specification .............................................................. 14
8.1
Electrical Diagram ........................................................................................ 19
8.2
Electrical Specifications ................................................................................ 19
8.3
Material List ................................................................................................ 19
8.4
Winding Instructions .................................................................................... 19
8.5
Illustrations ................................................................................................. 19
9 Transformer Design Spreadsheet ........................................................................ 19
10
Performance Data ........................................................................................... 24
10.1 Full Load Efficiency vs. Line .......................................................................... 24
10.2 No-Load Input Power ................................................................................... 25
10.3 Line and Load Regulation ............................................................................. 26
10.3.1 Line Regulation (Full Load) .................................................................... 26
10.3.2 Cross Load Regulation ........................................................................... 27
11
Thermal Performance ...................................................................................... 30
11.1 85 VAC........................................................................................................ 30
11.2 484 VAC ...................................................................................................... 31
12
Output Power vs. Thermal Rise at 85º Ambient for Different AC Input Voltages .. 32
13
Waveforms ..................................................................................................... 33
13.1 Load Transient Response ............................................................................. 33
13.1.1 5 V Load Transient (No-Load to Full Load) and No-Load on 12 V Output .. 33
13.1.2 5 V Load Transient (No-Load to Full Load) and Full Load on 12 V Output . 34
13.1.3 12 V Load Transient (No-Load to Full Load) and No-Load on 5 V Output .. 34
13.1.4 12 V Load Transient (No-Load to Full Load) and Full Load on 5 V Output . 35
13.2 Switching Waveforms................................................................................... 36
13.2.1 InnoSwitch-EP Waveforms ..................................................................... 36
13.2.2 SR FET Waveforms ............................................................................... 37
13.2.3 Output Voltage and Current Waveforms During Start-Up ......................... 38
13.3 Output Ripple Measurements........................................................................ 39
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Page 2 of 48
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RDR-531 17.5 W InnoSwitch-EP Dual Output Supply
13.3.1 Ripple Measurement Technique ............................................................. 39
13.3.2 Ripple Voltage Waveforms ..................................................................... 40
13.4 Line Undervoltage and Overvoltage (DC Input).............................................. 41
14
ESD................................................................................................................ 42
15
EMI ................................................................................................................ 42
15.1 Conductive EMI ........................................................................................... 42
15.1.1 Earth Grounded Output (QP / AV) .......................................................... 42
16
Lighting Surge Test ......................................................................................... 46
16.1 Combination Wave Differential Mode Test ..................................................... 46
16.2 Ring Wave Common Mode Test .................................................................... 46
Revision History .............................................................................................. 47
17
Important Note:
Although this board is designed to satisfy safety isolation requirements, the engineering
prototype has not been agency approved. Therefore, all testing should be performed
using an isolation transformer to provide the AC input to the prototype board.
Page 3 of 48
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RDR-531 17.5 W InnoSwitch-EP Dual Output Supply
12-Jul-16
1 Introduction
This document is an engineering report describing a 1.25 A, 12 V and 0.5 A, 5 V dual
output embedded power supply utilizing the INN2904K, with a 900 V rated MOSFET,
from the InnoSwitch-EP family of ICs.
This design shows the high power density and efficiency that is possible due to the high
level of integration while still providing exceptional performance.
The document contains the power supply specification, schematic, bill of materials,
transformer documentation, printed circuit layout, and performance data.
Figure 1 – Populated Circuit Board Photograph, Top.
Figure 2 – Populated Circuit Board Photograph, Bottom.
Power Integrations, Inc.
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Page 4 of 48
12-Jul-16
RDR-531 17.5 W InnoSwitch-EP Dual Output Supply
2 Power Supply Specification
The table below represents the minimum acceptable performance of the design. Actual
performance is listed in the results section.
Description
Input
Voltage
Frequency
Output
Output Voltage 1
Output Ripple Voltage 1
Symbol
Min
Typ
Max
Units
Comment
VIN
fLINE
85
47
484
64
VAC
Hz
2 Wire Input.
50/60
VOUT1
4.75
5
5.25
V
±5 %.
50
mV
20 MHz Bandwidth.
0.5
A
13.8
V
±15 %,
(±10 % with 0.1 A Min Load on 12 V.)
150
mV
20 MHz Bandwidth.
1.25
A
VRIPPLE1
Output Current 1
IOUT1
0
Output Voltage 2
VOUT2
10.2
Output Ripple Voltage 2
Output Current 2
Total Output Power
Continuous Output Power
Efficiency
Full Load
12
VRIPPLE2
IOUT2
0
POUT
η
17.5
W
86
No-Load Input Power
280
%
Measured at 110 / 230 VAC, POUT 25 oC.
mW
VIN at 230 VAC.
Environmental
Conducted EMI
Meets CISPR22B / EN55022B
Designed to meet IEC950, UL1950 Class
II
Safety
Surge
Differential
2
kV
1.2/50 µs surge, IEC 1000-4-5, Series
Impedance:
Differential Mode: 2 Ω.
Surge
Common mode Ring Wave
6
kV
100 kHz Ring Wave, 12 Ω.
Common Mode.
±16.5
±8
kV
kV
ESD
Ambient Temperature
Page 5 of 48
TAMB
0
40
o
C
Air discharge
Contact discharge
No degradation in performance
Free Convection, Sea Level.
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RDR-531 17.5 W InnoSwitch-EP Dual Output Supply
12-Jul-16
3 Schematic
Figure 3 – Schematic.
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RDR-531 17.5 W InnoSwitch-EP Dual Output Supply
4 Circuit Description
4.1 I nput EM I Filtering
Fuse F1 isolates the circuit and provides protection from component failure and the
common mode chokes L1 with capacitors, C1, C2, C17 and C18, provides attenuation for
EMI. Bridge rectifier BR1 rectifies the AC line voltage and provides a full wave rectified
DC across the filter consisting of C1 and C2. Thermistor RT1 is an inrush current limiter
in the circuit with the high peak forward surge current rated bridge rectifier.
4.2 I nnoSw itch-EP P rim ary
One side of the transformer primary is connected to the rectified DC bus, the other is
connected to the integrated 900 V power MOSFET inside the InnoSwitch-EP IC (U1).
A low cost RCD clamp formed by D1, R11, R12, and C7 limits the peak drain voltage due
to the effects of transformer leakage reactance and output trace inductance.
The IC is self-starting, using an internal high-voltage current source to charge the BPP
pin capacitor, C8, when AC is first applied. During normal operation the primary side
block is powered from an auxiliary winding on the transformer. The output of this is
configured as a flyback winding which is rectified and filtered using diode D2 and
capacitor C6, and fed in the BPP pin via a current limiting resistor R9. The primary side
overvoltage protection is obtained using Zener diode VR2 and R28. In the event of
overvoltage at output, the increased voltage at the output of the bias winding cause the
Zener diode VR2 to conduct and triggers the OVP latch in the primary side controller of
the InnoSwitch-EP IC.
Resistor R3, R4, R5, R10 and R8 provide line voltage sensing and provide a current to
U1, which is proportional to the DC voltage across capacitors C1 and C2. At
approximately 78 V DC, the current through these resistors exceeds the line undervoltage threshold, which results in enabling of U1. At approximately 700 V DC, the
current through these resistors exceeds the line over-voltage threshold, which results in
disabling of U1.
4.3 I nnoSw itch-EP Secondary
The secondary side of the InnoSwitch-EP provides output voltage, output current sensing
and drive to a MOSFET providing synchronous rectification.
Output rectification for the 5 V output is provided by SR FET Q2. Very low ESR capacitor
C21 provides filtering, and inductor L3 and capacitor C25 form a second stage filter that
significantly attenuates the high frequency ripple and noise at the 5 V output.
Output rectification for the 12 V output is provided by SR FET Q1. Very low ESR
capacitors C12 provides filtering, and inductor L2 and capacitor C26 form a second stage
Page 7 of 48
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RDR-531 17.5 W InnoSwitch-EP Dual Output Supply
12-Jul-16
filter that significantly attenuates the high frequency ripple and noise at the 12 V output.
C14 and C23 capacitors are used to high frequency switching ripple and radiated EMI.
RC snubber networks comprising R25 and C24 for Q2, R14 and C10 for Q1 damp high
frequency ringing across SR FETs, which results from leakage inductance of the
transformer windings and the secondary trace inductances.
In continuous conduction mode operation, the power MOSFET is turned off just prior to
the secondary side controller commanding a new switching cycle from the primary. In
discontinuous mode the MOSFET is turned off when the voltage drop across the MOSFET
falls below a threshold (VSR(TH)). Secondary side control of the primary side MOSFET
ensure that it is never on simultaneously with the synchronous rectification MOSFET. The
MOSFET drive signal is output on the SR/P pin.
The secondary side of the IC is self-powered from either the secondary winding forward
voltage or the output voltage. The output voltage powers the device, fed into the VO pin
and charges the decoupling capacitor C9 via an internal regulator during CV region and
forward secondary winding forward voltage powers the device during startup and CC
region through R13. The unit enters auto-restart when the sensed output voltage is
lower than 3 V.
Resistor R16, R15 and R23 form a voltage divider network that senses the output voltage
from both outputs for better cross-regulation. Zener diode VR1 improves the cross
regulation when only the 5 V output is loaded, which results in the 12 V output operating
at the higher end of the specification. The InnoSwitch-EP IC has an internal reference of
1.265 V. Feedback compensation networks comprising capacitors C20, C15 and resistors
R24, R17 reduce the output ripple voltage. Capacitor C11 provides decoupling from high
frequency noise affecting power supply operation. Total output current is sensed by R20
and R21 with a threshold of approximately 33 mV to reduce losses. Once the current
sense threshold across these resistors is exceeded, the device adjusts the number of
switch pulses to maintain a fixed output current
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Page 8 of 48
12-Jul-16
RDR-531 17.5 W InnoSwitch-EP Dual Output Supply
5 PCB Layout
PCB copper thickness is 2 oz (2.8 mils / 70 µm) unless otherwise stated.
Figure 4 – Printed Circuit Layout, Top.
Figure 5 – Printed Circuit Layout, Bottom.
Page 9 of 48
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RDR-531 17.5 W InnoSwitch-EP Dual Output Supply
12-Jul-16
6 Bill of Materials
Item
1
2
3
4
5
6
Qty
1
2
1
1
1
1
7
4
8
9
10
11
12
13
1
2
2
2
1
2
Ref Des
BR1
C1 C2
C6
C7
C8
C9
C10 C15
C20 C24
C11
C12 C21
C14 C23
C17 C18
C19
C25 C26
14
1
D1
15
16
1
1
17
4
18
1
D2
F1
FL1 FL2
FL4 FL5
FL3
19
1
L1
20
21
22
23
2
1
1
2
24
4
25
26
27
28
29
30
31
32
33
34
35
36
37
38
39
40
1
1
1
1
1
2
1
1
2
2
1
1
1
1
1
1
L2 L3
Q1
Q2
R1 R2
R3 R4
R5 R10
R8
R9
R11
R12
R13
R14 R25
R15
R16
R17 R24
R18 R19
R20
R21
R23
R28
RT1
RV1
41
1
T1
42
1
43
3
44
2
TP1
TP2 TP4
TP6
TP3 TP5
Description
1000 V, 0.8 A, Bridge Rectifier, SMD, MBS-1, 4-SOIC
33 µF, 400 V, Electrolytic, (12.5 x 20)
22 µF, 50 V, Electrolytic, (5 x 11)
1000 pF, 630 V, Ceramic, X7R, 1206
1 µF, 25 V, Ceramic, X5R, 0805
2.2 uF, 25 V, Ceramic, X7R, 0805
Mfg Part Number
B10S-G
KMG401ELL330MK20S
UPW1H220MDD
C1206C102KBRACTU
C2012X5R1E105K
C2012X7R1E225M
Mfg
Comchip
Nippon Chemi-Con
Nichicon
Kemet
TDK
TDK
C1608C0G2A102J
TDK
CC0603KRX7R9BB331
RNE1C471MDN1
C2012X7R1H105M
EKXJ401ELL470ML20S
WKO151MCPCF0KR
USA1C470MDD
Yageo
Nichicon
TDK Corp
United Chemi-Con
Vishay
Nichicon
DL4007-13-F
Diodes, Inc.
DFLR1200-7
0477002.MXEP
Diodes, Inc.
Littlefuse
Flying Lead , Hole size 70mils
N/A
N/A
Flying Lead , Hole size 30mils
16.6 mH,xA, Ferite Toroid, 4 Pin, Output
CMC Assembly
CMC Assembly
3.3 µH, 1.5 A
200 V, 13 A, N-Channel, TO-220
150 V, 17A N-Channel, 8DFN
RES, 620 k, 5%, 1/2 W, Carbon Film
N/A
N/A
SNX-R1840
TSD-3760
11R332C
AOTF2210L
AON7254
CFR-50JB-620K
Santronics
Premier Magnetics
Murata
Alpha & Omega
Alpha & Omega
Yageo
RES, 2.4 M, 1%, 1/4 W, Thick Film, 1206
RC1206FR-072M4L
Yageo
ERJ-6GEYJ624V
ERJ-3GEYJ272V
ERJ-8GEYJ364V
ERJ-8GEYJ150V
ERJ-3GEYJ470V
ERJ-3GEYJ4R3V
ERJ-3EKF1004V
ERJ-3EKF3242V
ERJ-6ENF1001V
RSF100JB-390K
RL0805FR-7W0R02L
ERJ-8RSJR12V
ERJ-3EKF1373V
ERJ-6GEYJ220V
20D2-05LD
ERZ-V14D102
RM8/12/1
SNX-R1839
POL-INN014
5012
Panasonic
Panasonic
Panasonic
Panasonic
Panasonic
Panasonic
Panasonic
Panasonic
Panasonic
Yageo
Yageo
Panasonic
Panasonic
Panasonic
Semitec
Panasonic
Schwartzpunkt
Santronics
Premier Magnetics
Keystone
Test Point, BLK, THRU-HOLE MOUNT
5011
Keystone
Test Point, RED, THRU-HOLE MOUNT
5010
Keystone
1000 pF, 100 V, Ceramic, NPO, 0603
330 pF 50 V, Ceramic, X7R, 0603
470 µF, 16 V,Al Organic Polymer, 12 mΩ, (8 x 11.5)
1 µF,50 V, Ceramic, X7R, 0805
47 µF, 400 V, Electrolytic (16 x 20)
150 pF, 440 Vac, Thru Hole, Ceramic Y-Capacitor
47 µF, 16 V, Electrolytic, Gen. Purpose, (6.3 x 7)
1000 V, 1 A, Rectifier, Glass Passivated, DO-213AA
(MELF)
200 V, 1 A, Rectifier, Glass Passivated, POWERDI123
FUSE, CERM, 2A, 500VAC, 400VDC, 5X20
RES, 620 kΩ, 5%, 1/8 W, Thick Film, 0805
RES, 2.7 kΩ, 5%, 1/10 W, Thick Film, 0603
RES, 360 kΩ, 5%, 1/4 W, Thick Film, 1206
RES, 15 Ω, 5%, 1/4 W, Thick Film, 1206
RES, 47 Ω, 5%, 1/10 W, Thick Film, 0603
RES, 4.3 Ω, 5%, 1/10 W, Thick Film, 0603
RES, 1.00 MΩ, 1%, 1/16 W, Thick Film, 0603
RES, 32.4 kΩ, 1%, 1/16 W, Thick Film, 0603
RES, 1.00 kΩ, 1%, 1/8 W, Thick Film, 0805
RES, 390 kΩ, 5%, 1 W, Metal Oxide
RES, 0.02 Ω, 1%, 1/4 W, Thick Film, 0805
RES, 0.12 Ω, 5%, 1/4 W, Thick Film, 1206
RES, 137 kΩ, 1%, 1/16 W, Thick Film, 0603
RES, 22 Ω, 5%, 1/8 W, Thick Film, 0805
NTC Thermistor, 20 Ω, 0.3 A
625 V,100 J, 14 mm, RADIAL
Bobbin, RM8, Vertical, 12 pins
Transformer Assembly
Transformer Assembly
Test Point, WHT, THRU-HOLE MOUNT
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Page 10 of 48
12-Jul-16
45
46
47
1
1
1
Page 11 of 48
RDR-531 17.5 W InnoSwitch-EP Dual Output Supply
U1
VR1
VR2
InnoSwitch-EP, Off-Line CV/CC Flyback Switcher
8.2 V, 5%, 1 W, DO-41
DIODE ZENER 4.7V 500MW SOD123
INN2904K
1N4738A,113
MMSZ5230B-7-F
Power Integrations
NXP Semi
Diodes, Inc.
Power Integrations
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RDR-531 17.5 W InnoSwitch-EP Dual Output Supply
12-Jul-16
7 Transformer (T1) Specification
7.1
Transform er Electrical Diagram
FL3
FL1
WD1: Primary
WD4: 1st Secondary
39T - #27AWG
7T – 2 x #23AWG_TIW
FL2
FL4
2
10
WD2: Bias
WD5: 2nd Secondary
6T – 2 x #28AWG
3T – 1 x #27AWG_TIW
FL5
11
WD3: Shield
5T – 2 x #28AWG
NC
Figure 6 – Transformer Electrical Diagram.
7.2
Electrical Specifications
Parameter
Nominal Primary
Inductance
Resonant
Frequency
Primary Leakage
Inductance
7.3
Item
[1]
[2]
[3]
[4]
[5]
[6]
[7]
[8]
[9]
Condition
Measured at 1 VPK-PK, 100 kHz switching frequency, between pin
2 and FL3, with all other windings open.
Between pin 2 and FL3, other windings open.
Between pin 2 and FL3, with FL1, FL2, FL4, FL5 shorted.
Spec.
381 µH ±10%
1100 kHz (Min.)
10 µH (Max).
M aterial List
Description
Core: RM8, PC95 TDK or DMR95 from DMEGC magnetics.
Bobbin: RM8, Vertical, 12 pins (6/6-circular) (PI P/N: 25-01084-00).
Core Clip: Allstar Magnetic, P/N: CLI/P-RM8/I.
Magnet Wire: #27 AWG, double coated.
Magnet Wire: #28 AWG, double coated.
Magnet Wire: #23 AWG, Triple Insulated Wire.
Magnet Wire: #27 AWG, Triple Insulated Wire.
Barrier Tape: 3M 1298 Polyester Film, 1 mil thickness, 9.5 mm wide.
Varnish: Dolph BC-359.
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Page 12 of 48
12-Jul-16
7.4
RDR-531 17.5 W InnoSwitch-EP Dual Output Supply
Transform er Build Diagram
FL5
FL4
WD5: 2nd Secondary 3T – 1 x #27AWG_TIW
WD4: 1st Secondary 7T – 2 x #23AWG_TIW
5T – 2 x #28AWG
WD3: Shield
(wound in parallel with…)
WD2: Bias
6T – 2 x #28AWG
FL2
FL1
10
NC
11
FL3
WD1: Primary
39T - #27AWG
2
Figure 7 – Transformer Build Diagram.
7.5
Transform er construction
Winding
Preparation
WD1
Primary
Insulation
WD2 & WD3
Bias & Shield
Insulation
WD4
1st Secondary
Insulation
WD5
2nd Secondary
Insulation
Finish
Page 13 of 48
Position the bobbin item [2] on the mandrel such that the pin side of the bobbin is on
the left side.
Winding direction is clock-wise direction.
Start at pin 2, wind 39 turns of wire item [4] in 2 layers, with tight tension, spread
wire evenly for 2nd layer. At the last turn leave ~1” floating and mark as FL3.
1 layer of tape item [8].
Start at pin 11, use 4 wires item [5], wind 5 turns, cut 2 wires as No-Connect for WD3.
Continue winding other 2 wires 1 more turn and finish at pin 10 for WD2.
1 layer of tape item [8].
Use 2 wires item [6], leave ~1” floating for start leads FL1, wind 7 turns in 1 ½ layers
and finish with ~1” floating for end leads FL2.
1 layer of tape item [8].
Use single wire item [7], leave ~1” floating for start lead FL4, wind 3 turns in 1 layer,
spread wire evenly across the bobbin, and finish with ~1” floating for end lead FL5.
2 layers of tape item [8] for insulation and secure the windings.
Gap cores to get 381 µH, assemble cores with tape.
Varnish with item [9].
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RDR-531 17.5 W InnoSwitch-EP Dual Output Supply
7.6
12-Jul-16
W inding I llustrations
Winding Preparation
Position the bobbin item
[2] on the mandrel such
that the pin side of the
bobbin is on the left side.
Winding direction is clockwise direction.
WD1
Primary
Start at pin 2, wind 39
turns of wire item [4] in 2
layers, with tight tension,
spread wire evenly for 2nd
layer. At the last turn
leave ~1” floating and
mark as FL3.
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Page 14 of 48
12-Jul-16
RDR-531 17.5 W InnoSwitch-EP Dual Output Supply
FL3
Insulation
1 layer of tape item [8].
WD2 & WD3
Bias & Shield
Start at pin 11, use 4
wires item [5], wind 5
turns, cut 2 wires as NoConnect for WD3.
Continue winding other 2
wires 1 more turn and
finish at pin 10 for WD2.
Page 15 of 48
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RDR-531 17.5 W InnoSwitch-EP Dual Output Supply
Insulation
12-Jul-16
1 layer of tape item [8].
FL1
WD4
1st Secondary
Power Integrations, Inc.
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Use 2 wires item [6],
leave ~1” floating for start
leads FL1, wind 7 turns in
1 ½ layers and finish with
~1” floating for end leads
FL2.
Page 16 of 48
12-Jul-16
RDR-531 17.5 W InnoSwitch-EP Dual Output Supply
FL2
FL1
Insulation
1 layer of tape item [8].
FL4
Use single wire item [7],
leave ~1” floating for start
lead FL4, wind 3 turns in 1
layer, spread wire evenly
across the bobbin, and
finish with ~1” floating for
end lead FL5.
WD5
2nd Secondary
FL4
Page 17 of 48
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RDR-531 17.5 W InnoSwitch-EP Dual Output Supply
12-Jul-16
FL5
FL4
FL2
FL5
Insulation
FL4
2 layers of tape item [8]
for insulation and secure
the windings.
FL1
Finish
Power Integrations, Inc.
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Gap cores to get 381 µH,
assemble cores with tape.
Varnish with item [9].
Page 18 of 48
12-Jul-16
RDR-531 17.5 W InnoSwitch-EP Dual Output Supply
8 Common Mode Choke (L1) Specification
8.1
Electrical Diagram
2
1
55T
#31 AWG
55T
#31 AWG
3
4
Figure 8 – Inductor Electrical Diagram.
8.2
Electrical Specifications
Inductance
Core Effective Inductance
Primary Leakage Inductance
8.3
Pins 1-4 and pins 2-3 measured at 100 kHz, 0.4 RMS.
Pins 1-4, with 2-3 shorted.
M aterial List
Item
[1]
[2]
8.4
16.6 mH ±25%
5500 nH/N2
80 µH
Description
Toroid: FERRITE INDUCTR TOROID.
1) JLW Electronics (Hong Kong), T14 x 8 x 5.5C-JL10.
2) TDK, B64290L0658 x 038 material.
3) PI Part number: #32-00286-00
Divider: Cable-tie, Panduit, PLT.7M-M.
Magnet Wire: #31 AWG Heavy Nyleze.
W inding I nstructions
1) Place 2 pieces of cable tie item [2] onto toroid item [1] to divide 2 equal sections.
2) Use 4 ft of wire item [3], start as pin 1 wind 55 turns in 2 layers in 1 section of toroid, and end at pin
4.
3) Do the same for another section of toroid, start at pin 2 then end at pin 3 symmetrically with last
winding.
4) Use hot glue or Epoxy to hold the windings in place.
8.5
I llustrations
Cable-tie
4
1
2
3
Figure 9 – Inductor Illustration.
Page 19 of 48
Power Integrations
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RDR-531 17.5 W InnoSwitch-EP Dual Output Supply
12-Jul-16
9 Transformer Design Spreadsheet
ACDC_InnoSwitchEP_052115; Rev.0.1;
INPUT
Copyright Power
Integrations 2015
ENTER APPLICATION VARIABLES
VACMIN
85
VACMAX
484
fL
INFO
OUTPUT
UNIT
85
484
50
V
V
Hz
VO
5.00
5.00
V
IO
3.50
3.50
A
17.50
W
Power
n
0.82
0.82
Z
0.40
0.40
tC
CIN
36.00
ENTER InnoSwitch-EP VARIABLES
InnoSwitch-EP
INN2904
Chose Configuration
INC
3.00
36.00
mSeconds
uFarad
INN2904
Increased
Current
Limit
ILIMITMIN
ILIMITTYP
ILIMITMAX
fSmin
1.070
1.150
1.231
93000
A
A
A
Hz
I^2fmin
111.09
A^2kHz
67
V
VDS
5.00
V
KP
0.981
KP_TRANSIENT
0.483
VOR
67
ACDC_InnoSwitch-EP_051915_Rev0-1;
InnoSwitch-EP Continuous/Discontinuous
Flyback Transformer Design Spreadsheet
Minimum AC Input Voltage
Maximum AC Input Voltage
AC Mains Frequency
Output Voltage (continuous power at the end of
the cable)
Power Supply Output Current (corresponding to
peak power)
Continuous Output Power, including cable drop
compensation
Efficiency Estimate at output terminals. Use 0.8
if no better data available
Z Factor. Ratio of secondary side losses to the
total losses in the power supply. Use 0.5 if no
better data available
Bridge Rectifier Conduction Time Estimate
Input Capacitance
User defined InnoSwitch
Enter "RED" for reduced current limit (sealed
adapters), "STD" for standard current limit or
"INC" for increased current limit (peak or higher
power applications)
Minimum Current Limit
Typical Current Limit
Maximum Current Limit
Minimum Device Switching Frequency
Worst case I2F parameter across the
temperature range
Reflected Output Voltage (VOR 0.25
ENTER InnoSwitch-EP PROTECTION VARIABLES
Line Undervoltage
BROWN IN
67.0
VRMS
BROWN OUT
54.9
VRMS
RLS
7.32
MOhms
RLS1/RLS2
3.65
MOhms
VBROWNIN VARIATION
0.00
%
275.9
VRMS
Minimum RMS AC Voltage at which the power
supply will BROWN-IN (turn-on). The actual
value of this voltage may differ slightly from the
desired value due to the V-pin resistor's
tolerance
Typical RMS AC Voltage at which the power
supply will BROWN-OUT (turn-off) under
conditions of line-undervoltage
Theoretical V-pin resistor for the desired UV/OV
setup
Use two 1% resistors in series for line sense (VPin) functionality
Variation between the actual and desired brownin voltage
Line Overvoltage
BROWN IN
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Typical RMS AC voltage at which the power
supply will BROWN-IN (turn-on) after a line
overvoltage BROWN-OUT (turn-off) event
Page 20 of 48
12-Jul-16
RDR-531 17.5 W InnoSwitch-EP Dual Output Supply
BROWN OUT
290.4
VRMS
Typical RMS AC voltage at which the power
supply will BROWN-OUT (turn-off) under
conditions of line-overvoltage
Load Overcurrent
IOMAX
2.10
A
RIS
0.017
Ohms
ENTER BIAS WINDING VARIABLES
VB
VDB
NB
10.00
0.70
5.89
V
V
V
PIVB
156.60
V
ENTER TRANSFORMER CORE/CONSTRUCTION VARIABLES
Core Type
RM8
RM8
PC47RM8ZCore
12
BRM8Bobbin
718CPFR
AE
0.64
LE
3.80
AL
1950
BW
9.05
M
0.00
L
2
NS
DC INPUT VOLTAGE PARAMETERS
VMIN
VMAX
CURRENT WAVEFORM SHAPE PARAMETERS
Bias Winding Voltage
Bias Winding Diode Forward Voltage Drop
Bias Winding Number of Turns
Bias winding peak reverse voltage at VACmax
and assuming VB*1.2
Enter Transformer Core
Enter core part number, if necessary
Enter bobbin part number, if necessary
cm^2
cm
nH/T^2
mm
mm
2
3
78
684
Load current beyond which the device will enter
into overload protection. By default value
consists of the sum of all output currents
multiplied by 1.2
Use a 0.017 Ohm, 1-5% resistor having a
minimum power rating of 0.0735W on the IS pin
for load overcurrent protection
V
V
DMAX
0.48
IAVG
IP
0.26
1.07
A
A
IR
1.05
A
IRMS
0.43
A
381
uHenry
10
39
250
%
nH/T^2
BM
2649
Gauss
BAC
1299
Gauss
ur
LG
BWE
921
0.28
18.1
mm
mm
OD
0.464
mm
INS
0.064
mm
Core Effective Cross Sectional Area
Core Effective Path Length
Ungapped Core Effective Inductance
Bobbin Physical Winding Width
Safety Margin Width (Half the Primary to
Secondary Creepage Distance)
Number of Primary Layers
Number of Secondary Turns
Minimum DC Input Voltage
Maximum DC Input Voltage
Duty Ratio at full load, minimum primary
inductance and minimum input voltage
Average Primary Current
Peak Primary Current assuming ILIMITMIN
Primary Ripple Current assuming ILIMITMIN,
and LPMIN
Primary RMS Current, assuming ILIMITMIN, and
LPMIN
TRANSFORMER PRIMARY DESIGN PARAMETERS
Warning
LP
LP_TOLERANCE
NP
ALG
Page 21 of 48
10
!!! Low primary inductance (LP), Excessive di/dt.
Peak drain current may exceed maximum rating.
Design for higher output power, or reduce
current limit and/or device size
Primary inductance tolerance
Primary Winding Number of Turns
Gapped Core Effective Inductance
Maximum Operating Flux Density, BM 0.1 mm)
Effective Bobbin Width
Maximum Primary Wire Diameter including
insulation
Estimated Total Insulation Thickness (= 2 * film
thickness)
Power Integrations
Tel: +1 408 414 9200 Fax: +1 408 414 9201
www.power.com
RDR-531 17.5 W InnoSwitch-EP Dual Output Supply
DIA
0.401
mm
AWG
27
AWG
CM
203
Cmils
CMA
473
Cmils/Amp
TRANSFORMER SECONDARY DESIGN PARAMETERS
Lumped parameters
ISP
13.90
ISRMS
5.87
IRIPPLE
4.71
CMS
1174
A
A
A
Cmils
AWGS
19
AWG
844
V
79
V
5.00
V
0.50
2.50
A
W
VD1
0.10
V
NS1
ISRMS1
IRIPPLE1
3.00
0.84
0.67
Turns
A
A
PIVS1
79
V
CMS1
168
Cmils
AWGS1
27
AWG
DIAS1
0.36
mm
ODS1
3.02
mm
Si7456
0.042
100
Ohm
V
12-Jul-16
Bare conductor diameter
Primary Wire Gauge (Rounded to next smaller
standard AWG value)
Bare conductor effective area in circular mils
Primary Winding Current Capacity (200 < CMA <
500)
Peak Secondary Current, assuming ILIMITMIN
Secondary RMS Current
Output Capacitor RMS Ripple Current
Secondary Bare Conductor minimum circular mils
Secondary Wire Gauge (Rounded up to next
larger standard AWG value)
VOLTAGE STRESS PARAMETERS
Warning
VDRAIN
PIVS
!!! REDUCE DRAIN VOLTAGE Vdrain
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