PSB25

Single Phase Rectifier Bridge Preliminary Data Sheet VRSM VDSM (V) 800 1200 1400 1600 1800 VRRM VDRM (V) 800 1200 1400 1600 1800 Type PSB 25 IdAV VRRM + = 21 A = 800-1800 V PSB PSB PSB PSB PSB 25/08 25/12 25/14 25/16 25/18 ~ ~ - Symbol IdAV IdAVM IFSM Test Conditions TC = 85 °C, TC = 63 °C, TVJ = 45 °C VR = 0 TVJ = TVJM VR = 0 TVJ = 45 °C VR = 0 TVJ = TVJM VR = 0 (per module) (per module) Maximum Ratings 17 21 380 440 360 400 725 800 650 650 A A A A A A A²s A²s A²s A²s °C °C °C V∼ Nm lb.in. g V∼ Features t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine ∫ i2 dt • • • • • • Package with 1/4“ fast-on terminals Isolation voltage 3000 V∼ Planar glass passivated chips Blocking voltage up to 1800 V Low forward voltage drop UL registered E 148688 Applications TVJ TVJM Tstg VISOL Md -40... + 150 150 -40... + 150 50/60 Hz, RMS t = 1 min IISOL ≤ 1 mA Mounting torque typ. t=1s (M5) (10-32 UNF) 2500 3000 2 18 20 • • • • Supplies for DC power equipment Input rectifier for PWM inverter Battery DC power supplies Field supply for DC motors Advantages Weight • • • Easy to mount with one screw Space and weight savings Improved temperature and power cycling capability Symbol IR VF VTO rT RthJC RthJK ds dA a Test Conditions VR = VRRM, TVJ = TVJM VR = VRRM, TVJ = 25°C IF = 150 A, TVJ = 25 °C For power-loss calculations only per diode; DC per module per diode; DC per module Creeping distance on surface Creeping distance in air Max. allowable acceleration Characteristic Value ≤ ≤ ≤ 0.3 5 2.2 0.85 12 8.2 2.05 9.4 2.35 12.7 9.4 50 mA mA V V mΩ K/W K/W K/W K/W mm mm m/s² Package style and outline Dimensions in mm (1mm = 0.0394“) Data according to IEC 60747 refer to a single diode unless otherwise stated POWERSEM GmbH, Walpersdorfer Str. 53 D - 91126 Schwabach Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20  2001 POWERSEM reserves the right to change limits, test conditions and dimensions 30 A I F(OV) -----I FSM I FSM (A) TVJ=45°C TVJ=150°C 380 340 10 3 25 20 T=150°C 1.6 2 As 1.4 TVJ=45°C 1.2 15 1 TVJ=150°C 10 0.8 0 V RRM 1/2 V RRM 5 IF T=25°C VF 0.6 1 V RRM 0 1 V 0.4 10 0 10 1 t[ms] 10 2 10 3 2 1 2 4 t [ms] 6 10 1.5 10 Fig. 1 Forward current versus voltage drop per diode Fig. 2 Surge overload current per diode IFSM: Crest value. t: duration 50 TC Fig. 3 ∫i2dt versus time (1-10ms) per diode (or thyristor) 50 [W] 40 PSB 25 30 [A] DC sin.180° rec.120° rec.60° rec.30° 0.45 -0.05 = RTHCA [K/W] 0.95 30 1.95 20 DC sin.180° rec.120° rec.60° rec.30° IFAVM 20 0 [A] 3.95 10 PVTOT 0 9.95 55 60 65 70 75 80 85 90 95 100 105 110 115 120 125 130 135 140 145 °C 150 20 10 IdAV 0 50 100 TC(°C) 150 200 Tamb 50 100 [K] 150 Fig. 4 Power dissipation versus direct output current and ambient temperature Fig.5 Maximum forward current at case temperature 10 Z thJK Z thJC 8 K/W 6 4 2 Z th 0.01 0.1 t[s] 1 10 Fig. 6 Transient thermal impedance per diode (or thyristor), calculated POWERSEM GmbH, Walpersdorfer Str. 53 D - 91126 Schwabach Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20  2001 POWERSEM reserves the right to change limits, test conditions and dimensions