Three Phase Rectifier Bridge
Preliminary Data Sheet VRSM VDSM (V) 800 1200 1400 1600 1800 VRRM VDRM (V) 800 1200 1400 1600 1800 Type
PSD 82
IdAV VRRM
= 88 A = 800-1800V
PSD PSD PSD PSD PSD
82/08 82/12 82/14 82/16 82/18
Symbol
IdAVM IFSM
Test Conditions
TC = 110 °C, TVJ = 45 °C VR = 0 TVJ = TVJM VR = 0 TVJ = 45 °C VR = 0 TVJ = TVJM VR = 0 (per module)
Maximum Ratings
88 750 820 670 740 2800 2800 2250 2250 A A A A A A²s A²s A²s A²s °C °C °C V∼ V∼
Features
t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine
∫ i dt
2
• • • • • •
Package with screw terminals Isolation voltage 3000 V∼ Planar glass passivated chips Blocking voltage up to 1800 V Low forward voltage drop UL registered E 148688
Applications
TVJ TVJM Tstg VISOL
Md
-40... + 150 150 -40... + 125 50/60 Hz, RMS t = 1 min IISOL ≤ 1 mA Mounting torque t=1s (M5) 2500 3000 5 5 160
• • • •
Supplies for DC power equipment Input rectifier for PWM inverter Battery DC power supplies Field supply for DC motors
Advantages
Nm Nm g
Weight
Terminal connection torque (M5) typ.
• • •
Easy to mount with two screws Space and weight savings Improved temperature and power cycling capability
Symbol
IR VF VTO rT RthJC RthJK ds dA a
Test Conditions
VR = VRRM, TVJ = 25°C VR = VRRM, TVJ = TVJM IF = 150 A, TVJ = 25 °C For power-loss calculations only per diode; DC current per module per diode; DC current per module Creeping distance on surface Creeping distance in air Max. allowable acceleration
Characteristic Value
≤ ≤ ≤ 0.3 5 1.6 0.8 5 1.1 0.183 1.52 0.253 10.0 9.4 50 mA mA V V mΩ K/W K/W K/W K/W mm mm m/s²
Package style and outline
Dimensions in mm (1mm = 0.0394“)
Data according to IEC 60747 refer to a single diode unless otherwise stated
2002 POWERSEM reserves the right to change limits, test conditions and dimensions POWERSEM GmbH, Walpersdorfer Str. 53 D - 91126 Schwabach Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20
200 [A] 150
100
50 IF 0 Tvj = 150°C Tvj = 25°C 2
0.5
1 1.5 VF [V]
Fig. 1 Forward current versus voltage drop per diode
Fig. 2 Surge overload current per diode IFSM: Crest value. t: duration
Fig. 3 ∫i2dt versus time (1-10ms) per diode (or thyristor)
Fig. 4 Power dissipation versus direct output current and ambient temperature
K/W
Fig.5 Maximum forward current at case temperature
2
Z thJK Z thJC
1.5
1
0.5
Zth
0.01 0.1 t[s] 1 10 Fig. 6 Transient thermal impedance per diode (or thyristor), calculated
POWERSEM GmbH, Walpersdorfer Str. 53 2002 POWERSEM reserves the right to change limits, test conditions and dimensions D - 91126 Schwabach Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20
很抱歉,暂时无法提供与“PSD82”相匹配的价格&库存,您可以联系我们找货
免费人工找货