BZT52C33

R ECTRON SEMICONDUCTOR TECHNICAL SPECIFICATION BZT52C2V4BZT52C39 SURFACE MOUNT ZENER DIODE VOLTAGE RANGE 2.4 to 39 Volts POWER RATING 500 mWatts FEATURES * * * * Planar Die Construction 500mW Power Dissipation on Ceramic PCB General Purpose Medium Current Ideally Suited for Automated Assembly Processes SOD-123 MECHANICAL DATA * * * * * Case: Molded plastic Epoxy: UL 94V-O rate flame retardant Lead: MIL-STD-202E method 208C guaranteed Mounting position: Any Weight: 0.01 gram .110(2.80) .102(2.60) .067(1.70) .059(1.50) .026(.65) .018(.45) .152(3.85) .140(3.55) .006(.15) .003(.08) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 C ambient temperature unless otherwise specified. o .049(1.25) .041(1.05) .004(.10) .000(.00) REF .020(0.50) Dimensions in inches and (millimeters) MAXIMUM RATINGES ( @ TA = 25 C unless otherwise noted ) RATINGS Max. Steady State Power Dissipation Max. Operating Temperature Range Storage Temperature Range @TA=25oC (Note 1) SYMBOL PD TJ TSTG VALUE 500 -65 to +150 -65 to +150 UNITS mW o o C C o ELECTRICAL CHARACTERISTICS ( @ TA = 25oC unless otherwise noted ) CHARACTERISTICS Thermal Resistance Junction to Ambient (Note 1) Max. Instantaneous Forward Voltage at IF= 10mA SYMBOL R θJA VF 25mm2. MIN. TYP. MAX. 305 0.9 UNITS o C/W Volts 2006-3 Note 1. Device mounted on ceramic PCB; 7.6mm x 9.4mm x 0.87mm with pad areas ELECTRICAL CHARACTERISTICS Zener voltage Range(Note 1) VZ (V) @ IZT TYPE Nom Volts BZT52C2V4 BZT52C2V7 BZT52C3V0 BZT52C3V3 BZT52C3V6 BZT52C3V9 BZT52C4V3 BZT52C4V7 BZT52C5V1 BZT52C5V6 BZT52C6V2 BZT52C6V8 BZT52C7V5 BZT52C8V2 BZT52C9V1 BZT52C10 BZT52C11 BZT52C12 BZT52C13 BZT52C15 BZT52C16 BZT52C18 BZT52C20 BZT52C22 BZT52C24 BZT52C27 BZT52C30 BZT52C33 BZT52C36 BZT52C39 2.4 2.7 3.0 3.3 3.6 3.9 4.3 4.7 5.1 5.6 6.2 6.8 7.5 8.2 9.1 10 11 12 13 15 16 18 20 22 24 27 30 33 36 39 Min Volts 2.2 2.5 2.8 3.1 3.4 3.7 4.0 4.4 4.8 5.2 5.8 6.4 7.0 7.7 8.5 9.4 10.4 11.4 12.4 13.8 15.3 16.8 18.8 20.8 22.8 25.1 28.0 31.0 34.0 37.0 Max Volts 2.6 2.9 3.2 3.5 3.8 4.1 4.6 5.0 5.4 6.0 6.6 7.2 7.9 8.7 9.6 10.6 11.6 12.7 14.1 15.6 17.1 19.1 21.2 23.3 25.6 28.9 32.0 35.0 38.0 41.0 IZT (mA) 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 2 2 2 2 2 Test current (@TA=25 C unless otherwise specified) Maximum reverse leakage Current IR (uA) 50 20 10 5 5 3 3 3 2 1 3 2 1 0.7 0.5 0.2 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 at VR (V) 1.0 1.0 1.0 1.0 1.0 1.0 1.0 2.0 2.0 2.0 4.0 4.0 5.0 5.0 6.0 7.0 8.0 8.0 8.0 10.5 11.2 12.6 14.0 15.4 16.8 18.9 21.0 23.1 25.2 27.3 Typical Temperature Coefficent @IZTC mV/OC Min -3.5 -3.5 -3.5 -3.5 -3.5 -3.5 -3.5 -3.5 -2.7 -2 0.4 1.2 2.5 3.2 3.8 4.5 5.4 6.0 7.0 9.2 10.4 12.4 14.4 16.4 18.4 21.4 24.4 27.4 30.4 33.4 Max 0 0 0 0 0 0 0 0.2 1.2 2.5 3.7 4.5 5.3 6.2 7.0 8.0 9.0 10.0 11.0 13.0 14.0 16.0 18.0 20.0 22.0 25.3 29.4 33.4 37.4 41.2 O Maximum Zener impedance (Note 2) ZZT at IZT (Ω) 100 100 95 95 90 90 90 80 60 40 10 15 15 15 15 20 20 25 30 30 40 45 55 55 70 80 80 80 90 130 ZZK (Ω) 600 600 600 600 600 600 600 500 480 400 150 80 80 80 100 150 150 150 170 200 200 225 225 250 250 300 300 325 350 350 at IZK (mA) 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 0.5 0.5 0.5 0.5 0.5 Test Current IZTC mA 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 2 2 2 2 2 Notes 1. Short duration test pulse used to minimize self-heating effect. 2. f = 1KHz R ECTRON RATING AND CHARACTERISTICS CURVES (BZT52CSV4-BZT52C39) 0.6 PD, POWER DISSIPATION (W) 0.5 0.4 0.3 0.2 0.1 0 0 25 50 75 100 O 50 TJ=25OC C2V7 C3V9 C5V6 C6V8 C6V2 C8V2 C3V3 C4V7 IZ, ZENER CURRENT(mA) 40 30 20 Test Current Iz 5.0mA 10 0 125 150 0 1 2 3 4 5 6 7 8 9 10 TA, AMBIENT TEMPERATURE( C) VZ, ZENER VOLTAGE(V) Figure1 Power Dissipation vs Ambient Temperature 30 TJ=25OC C10 Figure2 Zener Breakdown Characteristics 10 IZ, ZENER CURRENT (mA) TJ=25OC C39 IZ, ZENER CURRENT (mA) C12 8 20 C15 6 C18 10 Test Current Iz 5mA Test Current Iz 2mA 4 2 0 C22 C27 C33 C36 Test Current Iz 2mA 0 0 10 20 VZ, ZENER VOLTAGE(V) 30 40 0 10 20 30 40 50 60 70 80 90 100 VZ, ZENER VOLTAGE(V) Figure3 Zener Breakdown Characteristics 1000 CT,TOTAL CAPACITANCE(pF) VR=1V VR=2V TJ=25OC f=1MHz Figure4 Zener Breakdown Characteristics 100 VR=1V VR=2V 1 0 10 VZ,NOMINAL ZENER VOLTAGE(V) 100 Figure5 Total Capacitance vs Nominal Zener Voltage R ECTRON DISCLAIMER NOTICE Rectron Inc reserves the right to make changes without notice to any product specification herein, to make corrections, modifications, enhancements or other changes. Rectron Inc or anyone on its behalf assumes no responsibility or liability for any errors or inaccuracies. Data sheet specifications and its information contained are intended to provide a product description only. "Typical" parameters which may be included on RECTRON data sheets and/ or specifications can and do vary in different applications and actual performance may vary over time. Rectron Inc does not assume any liability arising out of the application or use of any product or circuit. Rectron products are not designed, intended or authorized for use in medical, life-saving implant or other applications intended for life-sustaining or other related applications where a failure or malfunction of component or circuitry may directly or indirectly cause injury or threaten a life without expressed written approval of Rectron Inc. 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