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LLDB3

LLDB3

  • 厂商:

    RECTRON

  • 封装:

  • 描述:

    LLDB3 - TRIGGER DIODES - Rectron Semiconductor

  • 数据手册
  • 价格&库存
LLDB3 数据手册
TRIGGER DIODES LLDB3 AND LLDB3SEL * VBO: 32V/34V/40V VERSIONS * Low Breakover Current FEATURES LL-34 DESCRIPTION High reliability glass passivation insuring parameter stability and protection against junction contamination .059 (1.50) .020 (0.50) .014 (0.35) .138 (3.51) .120 (3.30) .055 (1.40) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 o C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20%. Dimensions in inches and (millimeters) MAXIMUM RATINGS (At T A = 2 5oC unless otherwise noted) RATING Repetitive Peak On-State Current tp=20uA,F=100Hz Power Dissipation (@ T A=50 oC) Derate Above +50 oC Storage Temperature Range Junction Temperature ELECTRICAL CHARACTERISTICS (At TA = 25 C unless otherwise noted) RATING Breakover Voltage(Forward and Reverse) at IBO,C=22nF** Maximum Breakover Voltage Symmetry delta V BO= +V BO - - VBO C =22nF M inimum D ynamic Breakover Voltage delta I=IBO to IF =10mA ( see Fig3) Minimum Output Voltage* (see Fig 2) Peak Breakover Current at Breakorver Voltage* C=22nF** Rise Time* (see Fig3) Leakage Current* VB=0.5VBO max (see Fig1) 2.**Connected in parallel with the devices. 3. "Fully ROHS compliant", "100% Sn plating (Pb-free)". SYMBOL VBO delta VBO delta V+/VO IBO tr IB 25 1.5 10 Min 30 VALUE LLDB3 Max 34 +/-2 5 5 100 Min 28 LLDB3SEL Max 36 UNITS Volts Volts Volts Volts uA uS uA 2008-02 o SYMBOL ITRM P T STG TJ VALUE 2 150 4.0 -40 to + 125 125 UNITS A mW mW/ o C o C C o NOTES: 1. *Electrical characteristic applicable in both forward and reverse derections. RATING AND CHARACTERISTICS CURVES ( LLDB3 AND LLDB3SEL ) 10k 500k 0.1uF D.U.T Vo R = 20 + IF 10mA 220V 50Hz -V IBO IB 0.5 VBO V VBO +V FIG.2 Test circuit for output voltage 90 % Ip - IF 10 % tr FIG.1 Current-voltage characteristics FIG.3 Test circuit see Fig.2 Adjust R for Ip=0.5A RATING AND CHARACTERISTICS CURVES ( LLDB3 AND LLDB3SEL ) 160 POWER DISSIPATION, (mW) 140 120 100 80 60 40 20 0 20 40 60 80 100 O 1.08 1.06 VBO (TJ) VBO (TJ=25OC) 1.04 1.02 120 140 150 1.00 25 50 75 100 125 AMBIENT TEMPERATURE, ( C) JUNCTION TEMPERATURE, (OC) FIG.4 POWER DISSPATION VERSUS AMBIENT TEMPERATURE (MAXIMUM VALUES) 2.0 ITRM, PEAK PULSE CURRENT (A) FIG.5 RELATIVE VARIATION OF VBO VERSUS JUNCTION TEMPERATURE (TYPICAL VALUES) F=100Hz TJ initial= 25 OC 1.0 0.1 0.01 10 100 1000 10000 tp, PULSE DURATION (uS) FIG.6 PEAK PULSE CURRENT VERSUS PULSE DURATION (MAXIMUM VALUES) DISCLAIMER NOTICE Rectron Inc reserves the right to make changes without notice to any product specification herein, to make corrections, modifications, enhancements or other changes. Rectron Inc or anyone on its behalf assumes no responsibility or liability for any errors or inaccuracies. Data sheet specifications and its information contained are intended to provide a product description only. "Typical" parameters which may be included on RECTRON data sheets and/ or specifications can and do vary in different applications and actual performance may vary over time. Rectron Inc does not assume any liability arising out of the application or use of any product or circuit. Rectron products are not designed, intended or authorized for use in medical, life-saving implant or other applications intended for life-sustaining or other related applications where a failure or malfunction of component or circuitry may directly or indirectly cause injury or threaten a life without expressed written approval of Rectron Inc. Customers using or selling Rectron components for use in such applications do so at their own risk and shall agree to fully indemnify Rectron Inc and its subsidiaries harmless against all claims, damages and expenditures.
LLDB3 价格&库存

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LLDB3PF
    •  国内价格
    • 50+0.105
    • 500+0.0945
    • 5000+0.0875
    • 10000+0.084
    • 30000+0.0805
    • 50000+0.0784

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    LLDB3

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