2SB647ABTZ-E

2SB647, 2SB647A Silicon PNP Epitaxial REJ03G0648-0200 (Previous ADE-208-1025) Rev.2.00 Aug.10.2005 Application • Low frequency power amplifier • Complementary pair with 2SD667/A Outline RENESAS Package code: PRSS0003DC-A (Package name: TO-92 Mod) 1. Emitter 2. Collector 3. Base 3 2 1 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC iC(peak) PC Tj Tstg 2SB647 –120 –80 –5 –1 –2 0.9 150 –55 to +150 2SB647A –120 –100 –5 –1 –2 0.9 150 –55 to +150 Unit V V V A A W °C °C Rev.2.00 Aug 10, 2005 page 1 of 5 2SB647, 2SB647A Electrical Characteristics (Ta = 25°C) Item Collector to base breakdown voltage Collector to emitter breakdown voltage Emitter to base breakdown voltage Collector cutoff current DC current transfer ratio Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO hFE1*1 hFE2 Collector to emitter saturation voltage Base to emitter voltage Gain bandwidth product VCE(sat) VBE fT 2SB647 Min Typ –120 — –80 –5 — 60 30 — — — — — — — — — — 140 Max — — — –10 320 — –1 –1.5 — 2SB647A Min Typ Max –120 — — –100 –5 — 60 30 — — — — — — — — — — 140 20 — — –10 200 — –1 –1.5 — — V V MHz pF Unit V V V µA Test conditions IC = –10 µA, IE = 0 IC = –1 mA, RBE = ∞ IE = –10 µA, IC = 0 VCB = –100 V, IE = 0 VCE = –5 V, 2 IC = –150 mA* VCE = –5 V, 2 IC = –500 mA* IC = –500 mA, 2 IB = –50 mA* VCE = –5 V, 2 IC = –150 mA* VCE = –5 V, IC = –150 mA VCB = –10 V, IE = 0 f = 1 MHz Cob — 20 — — Collector output capacitance Notes: 1. The 2SB647 and 2SB647A are grouped by hFE1 as follows. 2. Pulse test B C D 2SB647 — 100 to 200 160 to 320 2SB647A 60 to 120 100 to 200 — Rev.2.00 Aug 10, 2005 page 2 of 5 2SB647, 2SB647A Main Characteristics Maximum Collector Dissipation Curve Collector power dissipation PC (W) 1.2 Typical Output Characteristics –1.0 Collector current IC (A) –0.8 –0.6 –0.4 –0.2 –120 0 –10 80 – –6 0 –4 0 – 30 2 0 – – 10 –5 –2 PC = 0. 0.8 0.4 –1 9W –0.5mA IB = 0 0 50 100 150 0 –2 –4 –6 –8 –10 Ambient Tmperature Ta (°C) Collector to Emitter Voltage VCE (V) DC Current Transfer Ratio vs. Collector Current 600 VCE = –5 V Pulse Typical Transfer Characteristics –500 –200 DC current transfer ratio hFE VCE = –5 V Pulse 500 400 300 200 100 Collector current IC (mA) –100 5°C –50 –20 –10 –5 –2 –1 0 –0.2 –0.4 Ta = 7 25 –25 Ta = 75°C 25 –25 –0.6 –0.8 –1.0 0 –1 –3 –10 –30 –100 –300 –1,000 Base to Emitter Voltage VBE (V) Saturation Voltage vs. Collector Current Collector to emitter saturation voltage VCE(sat) (V) Base to emitter saturation voltage VBE(sat) (V) Collector Current IC (mA) Gain Bandwidth Product vs. Collector Current Gain bandwidth product fT (MHz) 240 200 160 120 80 40 0 –10 VCE = –5 V –0.6 –0.5 –0.4 –0.3 –0.2 –0.1 0 –1.2 –1.0 IC = 10 IB Pulse –0.8 VBE(sat) Ta = –25°C 25 75 –0.6 –0.4 –0.2 0 –1 Ta = 75°C 25 –25 VCE(sat) –3 –10 –30 –100 –300 –1,000 –30 –100 –300 –1,000 Collector Current IC (mA) Collector Current IC (mA) Rev.2.00 Aug 10, 2005 page 3 of 5 2SB647, 2SB647A Collector Output Capacitance vs. Collector to Base Voltage Collector output capacitance Cob (pF) 200 100 50 f = 1 MHz IE = 0 20 10 5 2 –1 –2 –5 –10 –20 –50 –100 Collector to Base Voltage VCB (V) Rev.2.00 Aug 10, 2005 page 4 of 5 2SB647, 2SB647A Package Dimensions JEITA Package Code SC-51 RENESAS Code PRSS0003DC-A Package Name TO-92 Mod / TO-92 ModV MASS[Typ.] 0.35g Unit: mm 4.8 ± 0.4 3.8 ± 0.4 0.65 ± 0.1 0.75 Max 0.55 Max 0.60 Max 2.3 Max 0.7 10.1 Min 8.0 ± 0.5 0.5 Max 1.27 2.54 Ordering Information Part Name 2SB647CTZ-E 2SB647DTZ-E 2SB647ABTZ-E 2SB647ACTZ-E 2500 Quantity Shipping Container Hold Box, Radial Taping Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product. Rev.2.00 Aug 10, 2005 page 5 of 5 Sales Strategic Planning Div. Keep safety first in your circuit designs! Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials 1. 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